CN204374469U

CN204374469U - The logical infrared filtering sensitive element of 3390nm band

Info

Publication number: CN204374469U
Application number: CN201420757549.0U
Authority: CN
Inventors: 吕晶; 王继平; 胡伟琴
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Mai peak Polytron Technologies Inc
Priority date: 2014-12-07
Filing date: 2014-12-07
Publication date: 2015-06-03
Anticipated expiration: 2024-12-07

Abstract

The utility model discloses a kind of 3390nm and be with logical infrared filtering sensitive element, comprising with sapphire is raw-material substrate, be the second film plating layer with Ge, SiO for the first filming layer with Ge, SiO, and described substrate is located between the first filming layer and the second film plating layer.The logical infrared filtering sensitive element of a kind of 3390nm band that the utility model obtains, its centre wavelength 3390 ± 15nm, it, in petrochemical system infrared gas detection process, can improve signal to noise ratio (S/N ratio) greatly, improve accurate testing degree, be suitable for promoting on a large scale and using.Peak transmittance Tp >=75% of this optical filtering sensitive element, bandwidth=60 ± 10nm, 400 ~ 14000 nm(are except passband), Tavg<0.5%.

Description

The logical infrared filtering sensitive element of 3390nm band

Technical field

The utility model relates to infrared filtering sensitive element field, the logical infrared filtering sensitive element of especially a kind of 3390nm band.

Background technology

Infrared filtering sensitive element filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object easily, and namely infrared ray can not reflect through object.Utilize this characteristic ultrared, only allow the infrared ray of long wavelength pass through, the ultraviolet of filtering short wavelength and visible ray.Be applied to a lot of field, at present the signal to noise ratio (S/N ratio) of rate and cut-off region be through for the optical filtering sensitive element Problems existing used in petrochemical system infrared gas detection process not high, high-precision measurement requirement can not be met.

Utility model content

The purpose of this utility model is deficiency in order to solve above-mentioned technology and provides the logical infrared filtering sensitive element of 3390nm band that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio).

In order to achieve the above object, the logical infrared filtering sensitive element of a kind of 3390nm band designed by the utility model, comprising with sapphire is raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 105nm thickness from inside to outside, the SiO layer of 286nm thickness, the Ge layer of 111nm thickness, the SiO layer of 258nm thickness, the Ge layer of 97nm thickness, the SiO layer of 275nm thickness, the Ge layer of 130nm thickness, the SiO layer of 214nm thickness, the Ge layer of 88nm thickness, the SiO layer of 481nm thickness, the Ge layer of 400nm thickness, the SiO layer of 339nm thickness, the Ge layer of 384nm thickness, the SiO layer of 596nm thickness, the Ge layer of 386nm thickness, the SiO layer of 850nm thickness, the Ge layer of 349nm thickness, the SiO layer of 794nm thickness, the Ge layer of 380nm thickness, the SiO layer of 1022nm thickness, the Ge layer of 494nm thickness, the SiO layer of 1084nm thickness, the Ge layer of 432nm thickness, the SiO layer of 932nm thickness, the Ge layer of 465nm thickness, the SiO layer of 524nm thickness, the second described film plating layer is arranged in order the Ge layer including 101nm thickness from inside to outside, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 951nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 951nm thickness, the Ge layer of 201nm thickness, the SiO layer of 386nm thickness, the Ge layer of 179nm thickness, the SiO layer of 130nm thickness.

The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.

The logical infrared filtering sensitive element of a kind of 3390nm band that the utility model obtains, its centre wavelength 3390 ± 15nm, it, in petrochemical system infrared gas detection process, can improve signal to noise ratio (S/N ratio) greatly, improve accurate testing degree, be suitable for promoting on a large scale and using.Peak transmittance Tp >=75% of this optical filtering sensitive element, bandwidth=60 ± 10nm, 400 ~ 14000 nm(are except passband), Tavg<0.5%.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram.

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

In figure: the first filming layer 1, substrate 2, second film plating layer 3.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1.

As Fig. 1, shown in Fig. 2, the logical infrared filtering sensitive element of a kind of 3390nm band that the present embodiment describes, comprising with sapphire is raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 105nm thickness from inside to outside, the SiO layer of 286nm thickness, the Ge layer of 111nm thickness, the SiO layer of 258nm thickness, the Ge layer of 97nm thickness, the SiO layer of 275nm thickness, the Ge layer of 130nm thickness, the SiO layer of 214nm thickness, the Ge layer of 88nm thickness, the SiO layer of 481nm thickness, the Ge layer of 400nm thickness, the SiO layer of 339nm thickness, the Ge layer of 384nm thickness, the SiO layer of 596nm thickness, the Ge layer of 386nm thickness, the SiO layer of 850nm thickness, the Ge layer of 349nm thickness, the SiO layer of 794nm thickness, the Ge layer of 380nm thickness, the SiO layer of 1022nm thickness, the Ge layer of 494nm thickness, the SiO layer of 1084nm thickness, the Ge layer of 432nm thickness, the SiO layer of 932nm thickness, the Ge layer of 465nm thickness, the SiO layer of 524nm thickness, the second described film plating layer 3 is arranged in order the Ge layer including 101nm thickness from inside to outside, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 951nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 951nm thickness, the Ge layer of 201nm thickness, the SiO layer of 386nm thickness, the Ge layer of 179nm thickness, the SiO layer of 130nm thickness.

Claims

1. the logical infrared filtering sensitive element of 3390nm band, comprising with sapphire is raw-material substrate (2), with Ge, SiO is the first filming layer (1) and with Ge, SiO is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 105nm thickness from inside to outside, the SiO layer of 286nm thickness, the Ge layer of 111nm thickness, the SiO layer of 258nm thickness, the Ge layer of 97nm thickness, the SiO layer of 275nm thickness, the Ge layer of 130nm thickness, the SiO layer of 214nm thickness, the Ge layer of 88nm thickness, the SiO layer of 481nm thickness, the Ge layer of 400nm thickness, the SiO layer of 339nm thickness, the Ge layer of 384nm thickness, the SiO layer of 596nm thickness, the Ge layer of 386nm thickness, the SiO layer of 850nm thickness, the Ge layer of 349nm thickness, the SiO layer of 794nm thickness, the Ge layer of 380nm thickness, the SiO layer of 1022nm thickness, the Ge layer of 494nm thickness, the SiO layer of 1084nm thickness, the Ge layer of 432nm thickness, the SiO layer of 932nm thickness, the Ge layer of 465nm thickness, the SiO layer of 524nm thickness, described the second film plating layer (3) is arranged in order the Ge layer including 101nm thickness from inside to outside, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 951nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 476nm thickness, the Ge layer of 201nm thickness, the SiO layer of 951nm thickness, the Ge layer of 201nm thickness, the SiO layer of 386nm thickness, the Ge layer of 179nm thickness, the SiO layer of 130nm thickness.