CN203572996U - Moisture test optical filter with central wavelength of 1450 nm - Google Patents
Moisture test optical filter with central wavelength of 1450 nm Download PDFInfo
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- CN203572996U CN203572996U CN201320780072.3U CN201320780072U CN203572996U CN 203572996 U CN203572996 U CN 203572996U CN 201320780072 U CN201320780072 U CN 201320780072U CN 203572996 U CN203572996 U CN 203572996U
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- 230000003287 optical effect Effects 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 169
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 128
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 101
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 101
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 101
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 101
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 68
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 68
- 238000005259 measurement Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 230000000694 effects Effects 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 238000003331 infrared imaging Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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Abstract
The utility model provides a moisture test optical filter with the central wavelength of 1450 nm. The moisture test optical filter includes a substrate taking BK7 as raw material, and TiO2 and SiO2 as a first coating film layer, and Si and SiO2 as a second coating film layer, and the substrate is arranged between the first coating film layer and the second coating film layer. According to the moisture test optical filter with the central wavelength of 1450 nm, the central wavelength is 1450 +/- 5 nm, when the moisture test optical filter is used during moisture measurement, the signal to noise ratio can be greatly raised, and the imaging effect of an infrared imaging device can be raised. The peak value transmittance Tp of the optical filter is equal to or greater than 80 %, the band width is equal to 20 +/- 5 nm; and when the wavelength is in the range of 1000 to 3000 nm (except the passband), Tavg is less than 0.5 %.
Description
Technical field
The utility model relates to moisture measurement optical filter, the moisture measurement optical filter of especially a kind of centre wavelength 1450nm.
Background technology
Infrared fileter filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object at an easy rate, and namely infrared ray can not reflect when through object.Utilize ultrared this characteristic, only allow long wavelength's infrared ray pass through, filtering short wavelength's ultraviolet ray and visible ray.Be applied to a lot of fields, the problem existing for the optical filter using in moisture measurement process is at present that the signal to noise ratio (S/N ratio) of transmitance and cut-off region is not high, can not meet high-precision measurement requirement.
Utility model content
The purpose of this utility model is to provide in order to solve the deficiency of above-mentioned technology the moisture measurement optical filter that a kind of measuring accuracy is high, can greatly improve the centre wavelength 1450nm of signal to noise ratio (S/N ratio).
In order to achieve the above object, the moisture measurement optical filter of the centre wavelength 1450nm that the utility model is designed, comprises and take BK7 as raw-material substrate, with TiO2, SiO2 is the first filming layer and with Si, SiO2 is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 215nm thickness and the SiO2 layer of 322nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Si layer of 102nm thickness, the Si02 layer of 95nm thickness, the Si layer of 25nm thickness, the Si02 layer of 280nm thickness, the Si layer of 113nm thickness, the Si02 layer of 219nm thickness, the Si layer of 61nm thickness, the Si02 layer of 95nm thickness, the Si layer of 53nm thickness, the Si02 layer of 200nm thickness, the Si layer of 150nm thickness, the Si02 layer of 295nm thickness, the Si layer of 165nm thickness, the Si02 layer of 359nm thickness, the Si layer of 137nm thickness, the Si02 layer of 427nm thickness, the Si layer of 144nm thickness, the Si02 layer of 520nm thickness, the Si layer of 225nm thickness, the Si02 layer of 241nm thickness, the Si layer of 192nm thickness and the Si02 layer of 98nm thickness.
Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.
The moisture measurement optical filter of the resulting centre wavelength 1450nm of the utility model, its centre wavelength 1450 ± 5nm, it can improve greatly signal to noise ratio (S/N ratio) in moisture measurement process, improves accurate testing degree.Peak transmittance Tp >=80% of this optical filter, bandwidth=20 ± 5nm; 1000～3000nm(is except passband), Tavg<0.5%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, the moisture measurement optical filter of the centre wavelength 1450nm that the present embodiment is described, comprises and take BK7 as raw-material substrate 2, with TiO2, SiO2 is the first filming layer 1 and with Si, SiO2 is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 215nm thickness and the SiO2 layer of 322nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Si layer of 102nm thickness, the Si02 layer of 95nm thickness, the Si layer of 25nm thickness, the Si02 layer of 280nm thickness, the Si layer of 113nm thickness, the Si02 layer of 219nm thickness, the Si layer of 61nm thickness, the Si02 layer of 95nm thickness, the Si layer of 53nm thickness, the Si02 layer of 200nm thickness, the Si layer of 150nm thickness, the Si02 layer of 295nm thickness, the Si layer of 165nm thickness, the Si02 layer of 359nm thickness, the Si layer of 137nm thickness, the Si02 layer of 427nm thickness, the Si layer of 144nm thickness, the Si02 layer of 520nm thickness, the Si layer of 225nm thickness, the Si02 layer of 241nm thickness, the Si layer of 192nm thickness and the Si02 layer of 98nm thickness.
Claims (1)
1. a moisture measurement optical filter of centre wavelength 1450nm, comprises and take BK7 as raw-material substrate, with TiO2, SiO2 is the first filming layer and with Si, SiO2 is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 491nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 163nm thickness, the SiO2 layer of 246nm thickness, the TiO2 layer of 215nm thickness and the SiO2 layer of 322nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Si layer of 102nm thickness, the Si02 layer of 95nm thickness, the Si layer of 25nm thickness, the Si02 layer of 280nm thickness, the Si layer of 113nm thickness, the Si02 layer of 219nm thickness, the Si layer of 61nm thickness, the Si02 layer of 95nm thickness, the Si layer of 53nm thickness, the Si02 layer of 200nm thickness, the Si layer of 150nm thickness, the Si02 layer of 295nm thickness, the Si layer of 165nm thickness, the Si02 layer of 359nm thickness, the Si layer of 137nm thickness, the Si02 layer of 427nm thickness, the Si layer of 144nm thickness, the Si02 layer of 520nm thickness, the Si layer of 225nm thickness, the Si02 layer of 241nm thickness, the Si layer of 192nm thickness and the Si02 layer of 98nm thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320780072.3U CN203572996U (en) | 2013-11-29 | 2013-11-29 | Moisture test optical filter with central wavelength of 1450 nm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320780072.3U CN203572996U (en) | 2013-11-29 | 2013-11-29 | Moisture test optical filter with central wavelength of 1450 nm |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203572996U true CN203572996U (en) | 2014-04-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320780072.3U Expired - Lifetime CN203572996U (en) | 2013-11-29 | 2013-11-29 | Moisture test optical filter with central wavelength of 1450 nm |
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| Country | Link |
|---|---|
| CN (1) | CN203572996U (en) |
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2013
- 2013-11-29 CN CN201320780072.3U patent/CN203572996U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: HANGZHOU MULTI IR TECHNOLOGY CO.,LTD. Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: MULTI IR OPTOELECTRONICS Co.,Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20140430 |
|
| CX01 | Expiry of patent term |