CN203572995U

CN203572995U - Medical infrared gas detection analysis optical filter with central wavelength of 6557 nm

Info

Publication number: CN203572995U
Application number: CN201320780044.1U
Authority: CN
Inventors: 王继平; 吕晶; 余初旺
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: MULTI IR OPTOELECTRONICS CO Ltd
Priority date: 2013-11-29
Filing date: 2013-11-29
Publication date: 2014-04-30
Anticipated expiration: 2023-11-29

Abstract

The utility model provides a medical infrared gas detection analysis optical filter with a central wavelength of 6557 nm, and the medical infrared gas detection analysis optical filter is high in measuring precision and can greatly raise the signal to noise ratio. The medical infrared gas detection analysis optical filter includes a substrate taking Si as raw material, Ge and SiO as a first coating film layer, and Ge and ZnS as a second coating film layer, and the substrate is arranged between the first coating film layer and the second coating film layer. According to the medical infrared gas detection analysis optical filter with the central wavelength of 6557 nm, the central wavelength is 6557 +/-50 nm, when the medical infrared gas detection analysis optical filter is used during medical infrared gas detection analysis, the signal to noise ratio can be greatly raised, and the measuring precision is raised. The peak value transmittance Tp of the optical filter is equal to or greater than 80 %, the band width is equal to 170 +/- 20 nm, and when the wavelength is in the range of 400 to 11000 nm (except the passband), Tavg is less than 0.5 %.

Description

The medical infrared gas detection analysis filter of centre wavelength 6557nm

Technical field

The utility model relates to medical infrared gas detection optical filter, the medical infrared gas detection analysis filter of especially a kind of centre wavelength 6557nm.

Background technology

Infrared fileter filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object at an easy rate, and namely infrared ray can not reflect when through object.Utilize ultrared this characteristic, only allow long wavelength's infrared ray pass through, filtering short wavelength's ultraviolet ray and visible ray.Be applied to a lot of fields, the problem existing for the optical filter using in medical infrared gas detection analytic process is at present that the signal to noise ratio (S/N ratio) of transmitance and cut-off region is not high, can not meet high-precision measurement requirement.

Utility model content

The purpose of this utility model is in order to solve the deficiency of above-mentioned technology, to provide that a kind of measuring accuracy is high, the medical infrared gas detection analysis filter of the centre wavelength 6557nm that can greatly improve signal to noise ratio (S/N ratio).

In order to achieve the above object, the medical infrared gas detection analysis filter of the centre wavelength 6557nm that the utility model is designed, comprises and take Si as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 81nm thickness, the SiO layer of 553nm thickness, the Ge layer of 207nm thickness, the SiO layer of 180nm thickness, the Ge layer of 398nm thickness, the SiO layer of 728nm thickness, the Ge layer of 78nm thickness, the SiO layer of 332nm thickness, the Ge layer of 219nm thickness, the SiO layer of 319nm thickness, the Ge layer of 132nm thickness, the SiO layer of 535nm thickness, the Ge layer of 123nm thickness, the SiO layer of 331nm thickness, the Ge layer of 306nm thickness, the SiO layer of 488nm thickness, the Ge layer of 76nm thickness, the SiO layer of 373nm thickness, the Ge layer of 336nm thickness, the SiO layer of 398nm thickness, the Ge layer of 168nm thickness, the SiO layer of 766nm thickness, the Ge layer of 297nm thickness, the SiO layer of 744nm thickness, the Ge layer of 254nm thickness, the SiO layer of 277nm thickness, the Ge layer of 352nm thickness, the SiO layer of 709nm thickness, the Ge layer of 348nm thickness, the SiO layer of 360nm thickness, the Ge layer of 126nm thickness and the SiO layer of 200nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 3051nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 1525nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 719nm thickness, the Ge layer of 349nm thickness and the ZnS layer of 348nm thickness.

Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.

The medical infrared gas detection analysis filter of the resulting centre wavelength 6557nm of the utility model, its centre wavelength 6557 ± 50nm, it can improve greatly signal to noise ratio (S/N ratio) in medical infrared gas detection analytic process, improves accurate testing degree.Peak transmittance Tp >=80% of this optical filter, bandwidth=170 ± 20nm, 400～11000nm(is except passband), Tavg<0.5%.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram;

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1:

As Fig. 1, shown in Fig. 2, the medical infrared gas detection analysis filter of the centre wavelength 6557nm that the present embodiment is described, comprises and take Si as raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 81nm thickness, the SiO layer of 553nm thickness, the Ge layer of 207nm thickness, the SiO layer of 180nm thickness, the Ge layer of 398nm thickness, the SiO layer of 728nm thickness, the Ge layer of 78nm thickness, the SiO layer of 332nm thickness, the Ge layer of 219nm thickness, the SiO layer of 319nm thickness, the Ge layer of 132nm thickness, the SiO layer of 535nm thickness, the Ge layer of 123nm thickness, the SiO layer of 331nm thickness, the Ge layer of 306nm thickness, the SiO layer of 488nm thickness, the Ge layer of 76nm thickness, the SiO layer of 373nm thickness, the Ge layer of 336nm thickness, the SiO layer of 398nm thickness, the Ge layer of 168nm thickness, the SiO layer of 766nm thickness, the Ge layer of 297nm thickness, the SiO layer of 744nm thickness, the Ge layer of 254nm thickness, the SiO layer of 277nm thickness, the Ge layer of 352nm thickness, the SiO layer of 709nm thickness, the Ge layer of 348nm thickness, the SiO layer of 360nm thickness, the Ge layer of 126nm thickness and the SiO layer of 200nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 3051nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 1525nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 719nm thickness, the Ge layer of 349nm thickness and the ZnS layer of 348nm thickness.

Claims

1. a medical infrared gas detection analysis filter of centre wavelength 6557nm, comprises and take Si as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 81nm thickness, the SiO layer of 553nm thickness, the Ge layer of 207nm thickness, the SiO layer of 180nm thickness, the Ge layer of 398nm thickness, the SiO layer of 728nm thickness, the Ge layer of 78nm thickness, the SiO layer of 332nm thickness, the Ge layer of 219nm thickness, the SiO layer of 319nm thickness, the Ge layer of 132nm thickness, the SiO layer of 535nm thickness, the Ge layer of 123nm thickness, the SiO layer of 331nm thickness, the Ge layer of 306nm thickness, the SiO layer of 488nm thickness, the Ge layer of 76nm thickness, the SiO layer of 373nm thickness, the Ge layer of 336nm thickness, the SiO layer of 398nm thickness, the Ge layer of 168nm thickness, the SiO layer of 766nm thickness, the Ge layer of 297nm thickness, the SiO layer of 744nm thickness, the Ge layer of 254nm thickness, the SiO layer of 277nm thickness, the Ge layer of 352nm thickness, the SiO layer of 709nm thickness, the Ge layer of 348nm thickness, the SiO layer of 360nm thickness, the Ge layer of 126nm thickness and the SiO layer of 200nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 3051nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 763nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 1525nm thickness, the Ge layer of 395nm thickness, the ZnS layer of 719nm thickness, the Ge layer of 349nm thickness and the ZnS layer of 348nm thickness.