CN203551826U - Flame detection optical filter with central wavelength of 3800 nm - Google Patents

Flame detection optical filter with central wavelength of 3800 nm Download PDF

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Publication number
CN203551826U
CN203551826U CN201320777872.XU CN201320777872U CN203551826U CN 203551826 U CN203551826 U CN 203551826U CN 201320777872 U CN201320777872 U CN 201320777872U CN 203551826 U CN203551826 U CN 203551826U
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China
Prior art keywords
layer
thickness
sio
optical filter
flame detection
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Expired - Lifetime
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CN201320777872.XU
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Chinese (zh)
Inventor
吕晶
王继平
刘晶
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Hangzhou Multi Ir Technology Co ltd
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MULTI IR OPTOELECTRONICS CO Ltd
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Abstract

The utility model provides a flame detection optical filter with a central wavelength of 3800 nm which has high peak transmittance and can greatly raise a signal to noise ratio. The aviation tail gas detection optical filter comprises a substrate with infrared quartz as a raw material, a first coating layer of G e and S i O and a second coating layer of G e and S i O; the substrate is located between the first coating layer and the second coating layer. The flame detection optical filter has a central wavelength of 3800 nm +/- 40 nm, and can substantially raise a signal to noise ratio and test precision in a flame detection process. The peak value transmittance Tp of the optical filter is no less than 80%, the bandwidth is 180 +/- 20 nm, 400-11000 nm (except passband ), and Tavg is smaller than 0.5%.

Description

The flame detecting optical filter of centre wavelength 3800nm
Technical field
The utility model relates to flame detecting optical filter field, the flame detecting optical filter of especially a kind of centre wavelength 3800nm.
Background technology
At nature, any object, more than absolute zero (273 degree), have infrared line to send, and every kind of material has its special transmitting or Absorption Characteristics peak.Optical filter filters, cut-off visible ray allows specific infrared ray to pass through simultaneously.The characteristic of utilizing the characteristic infrared spectral line of this permission object of the logical infrared fileter of band to see through, can detect the existence of predetermined substance, is widely used in security protection, environmental protection, industry, scientific research etc.The quality of optical filter directly affects precision and the sensitivity of detection.Because any object is all sending infrared ray, temperature is higher, and the infrared ray of radiation is stronger.For flame detecting intermediate infrared filter, can, by the infrared ray of specifying, therefore to the precision prescribed of optical filter detection, want high.Just at present for the optical filter of flame detecting, accuracy of detection is not high, transmitance and signal to noise ratio (S/N ratio) low,, sometimes there is the phenomenon that mistake is surveyed in low precision, can not meet the needs of market development.
Utility model content
The purpose of this utility model is the deficiency in order to solve above-mentioned technology and provide a kind of peak transmittance high, can improve greatly signal to noise ratio (S/N ratio), improves the flame detecting optical filter of the centre wavelength 3800nm of flame detecting precision.
In order to achieve the above object, the flame detecting optical filter of the designed centre wavelength 3800nm of the utility model, comprises take infrared quartz as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 68nm thickness, the SiO layer of 231nm thickness, the Ge layer of 126nm thickness, the SiO layer of 138nm thickness, the Ge layer of 83nm thickness, the SiO layer of 344nm thickness, the Ge layer of 82nm thickness, the SiO layer of 166nm thickness, the Ge layer of 99nm thickness, the SiO layer of 211nm thickness, the Ge layer of 140nm thickness, the SiO layer of 363nm thickness, the Ge layer of 122nm thickness, the SiO layer of 421nm thickness, the Ge layer of 118nm thickness, the SiO layer of 439nm thickness, the Ge layer of 87nm thickness, the SiO layer of 474nm thickness, the Ge layer of 117nm thickness, the SiO layer of 477nm thickness, the Ge layer of 19nm thickness and the SiO layer of 122nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of the Ge layer of 239nm thickness, the SiO layer of 2127nm thickness, 228nm thickness, the SiO layer of 532nm thickness, 228nm thickness, the SiO layer of 532nm thickness, 912nm thickness, SiO layer, the Ge layer of 113nm thickness and the SiO layer of 357nm thickness of 532nm thickness.
Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.
The flame detecting optical filter of the centre wavelength 3800nm that the utility model obtains, its centre wavelength 3800 ± 40nm, it can improve greatly signal to noise ratio (S/N ratio) in flame detecting process, improves accurate testing degree.Peak transmittance Tp >=80% of this optical filter, bandwidth=180 ± 20nm, 400~11000nm(is except passband), Tavg<0.5%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, the flame detecting optical filter of the centre wavelength 3800nm that the present embodiment is described, comprises take infrared quartz as raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 68nm thickness, the SiO layer of 231nm thickness, the Ge layer of 126nm thickness, the SiO layer of 138nm thickness, the Ge layer of 83nm thickness, the SiO layer of 344nm thickness, the Ge layer of 82nm thickness, the SiO layer of 166nm thickness, the Ge layer of 99nm thickness, the SiO layer of 211nm thickness, the Ge layer of 140nm thickness, the SiO layer of 363nm thickness, the Ge layer of 122nm thickness, the SiO layer of 421nm thickness, the Ge layer of 118nm thickness, the SiO layer of 439nm thickness, the Ge layer of 87nm thickness, the SiO layer of 474nm thickness, the Ge layer of 117nm thickness, the SiO layer of 477nm thickness, the Ge layer of 19nm thickness and the SiO layer of 122nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of the Ge layer of 239nm thickness, the SiO layer of 2127nm thickness, 228nm thickness, the SiO layer of 532nm thickness, 228nm thickness, the SiO layer of 532nm thickness, 912nm thickness, SiO layer, the Ge layer of 113nm thickness and the SiO layer of 357nm thickness of 532nm thickness.

Claims (1)

1. the flame detecting optical filter of a centre wavelength 3800nm, comprise take infrared quartz as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 68nm thickness, the SiO layer of 231nm thickness, the Ge layer of 126nm thickness, the SiO layer of 138nm thickness, the Ge layer of 83nm thickness, the SiO layer of 344nm thickness, the Ge layer of 82nm thickness, the SiO layer of 166nm thickness, the Ge layer of 99nm thickness, the SiO layer of 211nm thickness, the Ge layer of 140nm thickness, the SiO layer of 363nm thickness, the Ge layer of 122nm thickness, the SiO layer of 421nm thickness, the Ge layer of 118nm thickness, the SiO layer of 439nm thickness, the Ge layer of 87nm thickness, the SiO layer of 474nm thickness, the Ge layer of 117nm thickness, the SiO layer of 477nm thickness, the Ge layer of 19nm thickness and the SiO layer of 122nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of the Ge layer of 239nm thickness, the SiO layer of 2127nm thickness, 228nm thickness, the SiO layer of 532nm thickness, 228nm thickness, the SiO layer of 532nm thickness, 912nm thickness, SiO layer, the Ge layer of 113nm thickness and the SiO layer of 357nm thickness of 532nm thickness.
CN201320777872.XU 2013-11-29 2013-11-29 Flame detection optical filter with central wavelength of 3800 nm Expired - Lifetime CN203551826U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320777872.XU CN203551826U (en) 2013-11-29 2013-11-29 Flame detection optical filter with central wavelength of 3800 nm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320777872.XU CN203551826U (en) 2013-11-29 2013-11-29 Flame detection optical filter with central wavelength of 3800 nm

Publications (1)

Publication Number Publication Date
CN203551826U true CN203551826U (en) 2014-04-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320777872.XU Expired - Lifetime CN203551826U (en) 2013-11-29 2013-11-29 Flame detection optical filter with central wavelength of 3800 nm

Country Status (1)

Country Link
CN (1) CN203551826U (en)

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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province

Patentee after: HANGZHOU MULTI IR TECHNOLOGY CO.,LTD.

Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province

Patentee before: MULTI IR OPTOELECTRONICS Co.,Ltd.

CX01 Expiry of patent term

Granted publication date: 20140416

CX01 Expiry of patent term