CN104597549B - 4600 nm band-pass infrared filtering sensitive element - Google Patents
4600 nm band-pass infrared filtering sensitive element Download PDFInfo
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- CN104597549B CN104597549B CN201410734957.9A CN201410734957A CN104597549B CN 104597549 B CN104597549 B CN 104597549B CN 201410734957 A CN201410734957 A CN 201410734957A CN 104597549 B CN104597549 B CN 104597549B
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- 238000001914 filtration Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 4
- 238000009501 film coating Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a 4600 nm band-pass infrared filtering sensitive element. The 4600 nm band-pass infrared filtering sensitive element comprises a substrate taking Si as raw material, a first film coating layer made of Ge and SiO and a second film coating layer made of Ge and SiO; the substrate is arranged between the first film coating layer and the second film coating layer. The central wavelength of the 4600 nm band-pass infrared filtering sensitive element obtained by the invention is 4600+/-40 nm; during the medical infrared gas detection analysis process, the 4700 nm band-pass infrared filtering sensitive element can greatly improve the signal-to-noise ratio and increase testing accuracy, and is applicable to popularize and use on a large scale. Tp of peak transmittance of the filtering sensitive element is not less than 70%, the band width is equal to 138+/-20 nm, 400-5500 nm (except for passing band), and Tavg is less than 0.1%.
Description
Technical field
The present invention relates to medical infrared gas detection optical filtering sensing element, especially a kind of 4600nm band logicals infrared absorption filter is photosensitive
Sensing unit.
Background technology
Infrared filtering sensing element is filtered, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength is easy to
Penetrate any object, that is, infrared ray will not be reflected when through object.Using ultrared this characteristic, only
Allow the infrared ray of long wavelength to pass through, filter the ultraviolet and visible ray of short wavelength.Many fields are applied to, it is red for medical at present
The problem that optical filtering sensing element used in outer gas detecting process is present is that the signal to noise ratio of transmitance and cut-off region is not high, no
High-precision measurement requirement can be met.
The content of the invention
The invention aims to solve the not enough of above-mentioned technology and provide a kind of measuring accuracy height, letter can be greatly improved
Make an uproar than 4600nm band logical infrared filtering sensing elements.
In order to achieve the above object, the present invention designed by a kind of 4600nm band logicals infrared filtering sensing element, including with
Si for raw material substrate, with Ge, SiO as the first filming layer and with Ge, SiO as the second film plating layer, and the substrate is located at the
Between one film plating layer and the second film plating layer, it is characterized in that the first filming layer is arranged in order from inside to outside that to include 120nm thick
The Ge layers of degree, the SiO layer of 257nm thickness, the Ge layers of 110nm thickness, the SiO layer of 267nm thickness, the Ge layers of 112nm thickness,
The SiO layer of 278nm thickness, the Ge layers of 161nm thickness, the SiO layer of 282nm thickness, the Ge layers of 110nm thickness, 239nm thickness
SiO layer, the Ge layers of 201nm thickness, the SiO layer of 294nm thickness, the Ge layers of 233nm thickness, the SiO layer of 287nm thickness, 240nm
The Ge layers of thickness, the SiO layer of 393nm thickness, the Ge layers of 257nm thickness, the SiO layer of 201nm thickness, the Ge layers of 270nm thickness,
The SiO layer of 303nm thickness, the Ge layers of 325nm thickness, the SiO layer of 284nm thickness, the Ge layers of 71nm thickness, 180nm thickness
SiO layer；The second described film plating layer be arranged in order from inside to outside include the Ge layers of 283nm thickness, the SiO layer of 654nm thickness,
The Ge layers of 283nm thickness, the SiO layer of 1308nm thickness, the Ge layers of 283nm thickness, the SiO layer of 654nm thickness, 283nm thickness
Ge layers, the SiO layer of 654nm thickness, the Ge layers of 283nm thickness, the SiO layer of 654nm thickness, the Ge layers of 566nm thickness,
The SiO layer of 602nm thickness, the Ge layers of 259nm thickness, the SiO layer of 150nm thickness.
The corresponding thickness of above-mentioned each material, it allows to change in the margin of tolerance, and scope of its change belongs to this patent guarantor
The scope of shield, is identity relation.Generally the tolerance of thickness is in 10nm or so.
A kind of 4600nm band logicals infrared filtering sensing element obtained by the present invention, 4600 ± 40nm of its centre wavelength, its
During the analysis of medical infrared gas detection, signal to noise ratio can be greatly improved, improve accurate testing degree, be suitable on a large scale
Promote and use.Peak transmittance Tp >=70% of the optical filtering sensing element, bandwidth=138 ± 20nm, 400～5500nm（Except logical
Band is outer）, Tavg<0.1%.
Description of the drawings
Fig. 1 is embodiment overall structure diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment is provided.
In figure：The first filming layer 1, substrate 2, the second film plating layer 3.
Specific embodiment
The invention will be further described to combine accompanying drawing below by embodiment.
Embodiment 1.
As depicted in figs. 1 and 2, a kind of 4600nm band logicals infrared filtering sensing element of the present embodiment description, including with Si
For the substrate 2 of raw material, it is located at as the first filming layer 1 and by the second film plating layer 3, and the substrate 2 of Ge, SiO with Ge, SiO
Between the film plating layer 3 of the first filming layer 1 and second, the first filming layer 1 is arranged in order includes 120nm thickness from inside to outside
Ge layers, the SiO layer of 257nm thickness, the Ge layers of 110nm thickness, the SiO layer of 267nm thickness, the Ge layers of 112nm thickness, 278nm
The SiO layer of thickness, the Ge layers of 161nm thickness, the SiO layer of 282nm thickness, the Ge layers of 110nm thickness, the SiO of 239nm thickness
Layer, the Ge layers of 201nm thickness, the SiO layer of 294nm thickness, the Ge layers of 233nm thickness, the SiO layer of 287nm thickness, 240nm are thick
The Ge layers of degree, the SiO layer of 393nm thickness, the Ge layers of 257nm thickness, the SiO layer of 201nm thickness, the Ge layers of 270nm thickness,
The SiO layer of 303nm thickness, the Ge layers of 325nm thickness, the SiO layer of 284nm thickness, the Ge layers of 71nm thickness, 180nm thickness
SiO layer；The second described film plating layer 3 is arranged in order from inside to outside Ge layers, the SiO of 654nm thickness for including 283nm thickness
Layer, the Ge layers of 283nm thickness, the SiO layer of 1308nm thickness, the Ge layers of 283nm thickness, the SiO layer of 654nm thickness, 283nm are thick
The Ge layers of degree, the SiO layer of 654nm thickness, the Ge layers of 283nm thickness, the SiO layer of 654nm thickness, the Ge layers of 566nm thickness,
The SiO layer of 602nm thickness, the Ge layers of 259nm thickness, the SiO layer of 150nm thickness.
Claims (1)
1. a kind of 4600nm band logicals infrared filtering sensing element, including the substrate with Si as raw material（2）, with Ge, SiO as first
Film plating layer（1）With with Ge, SiO as the second film plating layer（3）, and the substrate（2）Located at the first filming layer（1）With the second film plating layer
（3）Between, it is characterized in that the first filming layer（1）Ge layers, the 257nm for including 120nm thickness is arranged in order from inside to outside
The SiO layer of thickness, the Ge layers of 110nm thickness, the SiO layer of 267nm thickness, the Ge layers of 112nm thickness, the SiO of 278nm thickness
Layer, the Ge layers of 161nm thickness, the SiO layer of 282nm thickness, the Ge layers of 110nm thickness, the SiO layer of 239nm thickness, 201nm are thick
The Ge layers of degree, the SiO layer of 294nm thickness, the Ge layers of 233nm thickness, the SiO layer of 287nm thickness, the Ge layers of 240nm thickness,
The SiO layer of 393nm thickness, the Ge layers of 257nm thickness, the SiO layer of 201nm thickness, the Ge layers of 270nm thickness, 303nm thickness
SiO layer, the Ge layers of 325nm thickness, the SiO layer of 284nm thickness, the Ge layers of 71nm thickness, the SiO layer of 180nm thickness；Described
Second film plating layer（3）Ge layers, the SiO layer of 654nm thickness, the 283nm thickness for including 283nm thickness is arranged in order from inside to outside
Ge layers, the SiO layer of 1308nm thickness, the Ge layers of 283nm thickness, the SiO layer of 654nm thickness, the Ge layers of 283nm thickness,
The SiO layer of 654nm thickness, the Ge layers of 283nm thickness, the SiO layer of 654nm thickness, the Ge layers of 566nm thickness, 602nm thickness
SiO layer, the Ge layers of 259nm thickness, the SiO layer of 150nm thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410734957.9A CN104597549B (en) | 2014-12-07 | 2014-12-07 | 4600 nm band-pass infrared filtering sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410734957.9A CN104597549B (en) | 2014-12-07 | 2014-12-07 | 4600 nm band-pass infrared filtering sensitive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104597549A CN104597549A (en) | 2015-05-06 |
| CN104597549B true CN104597549B (en) | 2017-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410734957.9A Active CN104597549B (en) | 2014-12-07 | 2014-12-07 | 4600 nm band-pass infrared filtering sensitive element |
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| CN (1) | CN104597549B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105842770B (en) * | 2016-05-17 | 2018-06-01 | 江苏大学 | A kind of CO2Gas detection infrared fileter and preparation method thereof |
| CN111323862A (en) * | 2020-03-11 | 2020-06-23 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for sunlight interference resistance flame detection and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202305861U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 3,000-5,000nm band-pass infrared filter |
| CN202472019U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 5,300-nano band pass infrared optical filter |
| CN203551828U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Astronomical optical filter with 3600-4000 nm pass band for observing graphic spectrums |
| CN204374467U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | The logical infrared filtering sensitive element of 4600nm band |
-
2014
- 2014-12-07 CN CN201410734957.9A patent/CN104597549B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202305861U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 3,000-5,000nm band-pass infrared filter |
| CN202472019U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 5,300-nano band pass infrared optical filter |
| CN203551828U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Astronomical optical filter with 3600-4000 nm pass band for observing graphic spectrums |
| CN204374467U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | The logical infrared filtering sensitive element of 4600nm band |
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| CN104597549A (en) | 2015-05-06 |
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| CB02 | Change of applicant information |
Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant before: Multi IR Optoelectronics Co., Ltd. |
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