CN203551824U

CN203551824U - Nitric oxide gas detection optical filter with central wavelength of 4580 nm

Info

Publication number: CN203551824U
Application number: CN201320777858.XU
Authority: CN
Inventors: 吕晶; 王继平; 刘晶
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: MULTI IR OPTOELECTRONICS CO Ltd
Priority date: 2013-11-29
Filing date: 2013-11-29
Publication date: 2014-04-16
Anticipated expiration: 2023-11-29

Abstract

The utility model provides a nitric oxide gas detection optical filter with a central wavelength of 4580 nm, which has high peak transmittance and can greatly raise a signal to noise ratio. The nitric oxide gas detection optical filter comprises a substrate with sapphire as a raw material, a first coating layer of G e and S i O and a second coating layer of G e and S i O; the substrate is located between the first coating layer and the second coating layer. The nitric oxide gas detection optical filter has a central wavelength of 4580 nm +/- 40 nm, and can substantially raise a signal to noise ratio and test precision in an aviation tail gas detection process. The peak value transmittance Tp of the optical filter is no less than 80%, the bandwidth is 140 +/- 20 nm, 400-12000 nm (except passband ), and Tavg is smaller than 0.5%.

Description

The nitric oxide gas of centre wavelength 4580nm detects optical filter

Technical field

The utility model relates to nitric oxide gas and detects optical filter field, and especially the nitric oxide gas of centre wavelength 4580nm detects optical filter.

Background technology

At nature, any object, more than absolute zero (273 degree), have infrared line to send, and every kind of material has its special transmitting or Absorption Characteristics peak.The logical infrared fileter of band filters, cut-off visible ray allows specific infrared ray to pass through simultaneously.The characteristic of utilizing the characteristic infrared spectral line of this permission object of the logical infrared fileter of band to see through, can detect the existence of predetermined substance, is widely used in security protection, environmental protection, industry, scientific research etc.The quality of the logical infrared fileter of band directly affects precision and the sensitivity of detection.Current NO infrared optics analytical instrument is widely used, detect gas content and specifically have real-time, continuous and reliable feature, but low by NO content in object gas, infrared signature absorption peak a little less than, detection difficult, therefore at present domestic more employing chemical method and film temperature-sensitive probe method, short or high in cost of production problem of Existing detector life-span, therefore should reduce costs, improve again detection accuracy quite important in NO infrared optics analytical instrument.The optical filter of just at present surveying for NO, accuracy of detection is not high, transmitance and signal to noise ratio (S/N ratio) low,, sometimes there is the phenomenon that mistake is surveyed in low precision, can not meet the needs of market development.

Utility model content

The purpose of this utility model is the deficiency in order to solve above-mentioned technology and provide that a kind of measuring accuracy is high, the nitric oxide gas of the centre wavelength 4580nm that can greatly improve signal to noise ratio (S/N ratio) detects optical filter.

In order to achieve the above object, the nitric oxide gas of the designed centre wavelength 4580nm of the utility model detects optical filter, comprises take sapphire as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 65nm thickness, the SiO layer of 216nm thickness, the Ge layer of 139nm thickness, the SiO layer of 292nm thickness, the Ge layer of 81nm thickness, the SiO layer of 300nm thickness, the Ge layer of 145nm thickness, the SiO layer of 114nm thickness, the Ge layer of 134nm thickness, the SiO layer of 454nm thickness, the Ge layer of 113nm thickness, the SiO layer of 220nm thickness, the Ge layer of 208nm thickness, the SiO layer of 198nm thickness, the Ge layer of 113nm thickness, the SiO layer of 567nm thickness, the Ge layer of 206nm thickness, the SiO layer of 248nm thickness, the Ge layer of 222nm thickness, the SiO layer of 452nm thickness, the Ge layer of 256nm thickness, the SiO layer of 282nm thickness, the Ge layer of 119nm thickness, the SiO layer of 635nm thickness, the Ge layer of 293nm thickness, the SiO layer of 1264nm thickness, the Ge layer of 273nm thickness, the SiO layer of 1109nm thickness, the Ge layer of 414nm thickness and the SiO layer of 526nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of the Ge layer of the Ge layer of 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 1292nm thickness, 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 2583nm thickness, the Ge layer of 409nm thickness, SiO layer, the Ge layer of 155nm thickness and the SiO layer of 1096nm thickness of 400nm thickness.

Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.

The nitric oxide gas of the centre wavelength 4580nm that the utility model obtains detects optical filter, its centre wavelength 4580 ± 40nm, and it,, in aviation tail gas gas testing process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree.Peak transmittance Tp >=80% of this optical filter, bandwidth=140 ± 20nm, 400～12000nm(is except passband), Tavg<0.5%.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram;

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1:

As Fig. 1, shown in Fig. 2, the nitric oxide gas of the centre wavelength 4580nm that the present embodiment is described detects optical filter, comprises take sapphire as raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 65nm thickness, the SiO layer of 216nm thickness, the Ge layer of 139nm thickness, the SiO layer of 292nm thickness, the Ge layer of 81nm thickness, the SiO layer of 300nm thickness, the Ge layer of 145nm thickness, the SiO layer of 114nm thickness, the Ge layer of 134nm thickness, the SiO layer of 454nm thickness, the Ge layer of 113nm thickness, the SiO layer of 220nm thickness, the Ge layer of 208nm thickness, the SiO layer of 198nm thickness, the Ge layer of 113nm thickness, the SiO layer of 567nm thickness, the Ge layer of 206nm thickness, the SiO layer of 248nm thickness, the Ge layer of 222nm thickness, the SiO layer of 452nm thickness, the Ge layer of 256nm thickness, the SiO layer of 282nm thickness, the Ge layer of 119nm thickness, the SiO layer of 635nm thickness, the Ge layer of 293nm thickness, the SiO layer of 1264nm thickness, the Ge layer of 273nm thickness, the SiO layer of 1109nm thickness, the Ge layer of 414nm thickness and the SiO layer of 526nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of the Ge layer of the Ge layer of 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 1292nm thickness, 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 2583nm thickness, the Ge layer of 409nm thickness, SiO layer, the Ge layer of 155nm thickness and the SiO layer of 1096nm thickness of 400nm thickness.

Claims

1. the nitric oxide gas of centre wavelength 4580nm detects an optical filter, comprises take sapphire as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 65nm thickness, the SiO layer of 216nm thickness, the Ge layer of 139nm thickness, the SiO layer of 292nm thickness, the Ge layer of 81nm thickness, the SiO layer of 300nm thickness, the Ge layer of 145nm thickness, the SiO layer of 114nm thickness, the Ge layer of 134nm thickness, the SiO layer of 454nm thickness, the Ge layer of 113nm thickness, the SiO layer of 220nm thickness, the Ge layer of 208nm thickness, the SiO layer of 198nm thickness, the Ge layer of 113nm thickness, the SiO layer of 567nm thickness, the Ge layer of 206nm thickness, the SiO layer of 248nm thickness, the Ge layer of 222nm thickness, the SiO layer of 452nm thickness, the Ge layer of 256nm thickness, the SiO layer of 282nm thickness, the Ge layer of 119nm thickness, the SiO layer of 635nm thickness, the Ge layer of 293nm thickness, the SiO layer of 1264nm thickness, the Ge layer of 273nm thickness, the SiO layer of 1109nm thickness, the Ge layer of 414nm thickness and the SiO layer of 526nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of the Ge layer of the Ge layer of 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 1292nm thickness, 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 646nm thickness, 279nm thickness, the SiO layer of 2583nm thickness, the Ge layer of 409nm thickness, SiO layer, the Ge layer of 155nm thickness and the SiO layer of 1096nm thickness of 400nm thickness.