CN203551819U - Infrared temperature measurement optical filter with passband of 7550-13900nm - Google Patents

Infrared temperature measurement optical filter with passband of 7550-13900nm Download PDF

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Publication number
CN203551819U
CN203551819U CN201320777758.7U CN201320777758U CN203551819U CN 203551819 U CN203551819 U CN 203551819U CN 201320777758 U CN201320777758 U CN 201320777758U CN 203551819 U CN203551819 U CN 203551819U
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China
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thickness
layer
zns
optical filter
zns layer
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Withdrawn - After Issue
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CN201320777758.7U
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Chinese (zh)
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王继平
吕晶
余初旺
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MULTI IR OPTOELECTRONICS CO Ltd
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MULTI IR OPTOELECTRONICS CO Ltd
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Abstract

The utility model relates to an infrared temperature measurement optical filter with a passband of 7550-13900nm, and the infrared temperature measurement optical filter has high measurement precision and can greatly improve a signal-to-noise ratio. The infrared temperature measurement optical filter comprises a base board taking silicon as a raw material, and the first coating layer and the second coating layer which respectively take germanium and zinc sulfide as raw materials, wherein the base board is arranged between the first coating layer and the second coating layer. The infrared temperature measurement optical filter with the passband of 7550-13900nm, in a temperature measurement process, the signal-to-noise ratio can be improved, and measurement precision can be improved. According to the optical filter, 50% Cut on is equal to 7550+/-200nm, and 50% Cut off is equal to 13900+/-400nm; in a range of 7750-13400nm, Tavg is greater than or equal to 85%; in a range of 2000-7000nm and 14500-19000nm, the Tavg is smaller than or equal to 1%.

Description

The infrared measurement of temperature optical filter that is 7550-13900nm by band
Technical field
The utility model relates to infrared fileter field, especially a kind of infrared measurement of temperature optical filter that is 7550-13900nm by band.
Background technology
Infrared thermometer is comprised of parts such as optical system, detector, signal amplifier and signal processing, demonstration outputs.Optical system converges the Infrared Targets energy (heat) in its visual field, and the size of visual field is by optical element and the location positioning thereof of temperature measurer.Infrared energy focuses on detector and changes corresponding electric signal into.This signal process amplifier and signal processing circuit, and according to the temperature value that changes measured target after the algorithm in instrument and the correction of target emissivity into.
The detector of infrared thermometer is the key that realizes infrared energy (heat energy) switching electrical signals, the infrared energy (heat) sending due to various biologies is different, so in routine use in order to observe the temperature value of certain particular organisms, people tend to add infrared fileter in detector, by infrared fileter, can make detector only accept the infrared energy of specific band, guarantee the temperature-measuring results of infrared thermometer, for thermometric and imaging.
But, the infrared measurement of temperature optical filter that current is 7550-13900nm by band, its signal to noise ratio (S/N ratio) is low, and low precision can not meet the needs of market development.
Utility model content
The purpose of this utility model is the deficiency in order to solve above-mentioned technology and the infrared measurement of temperature optical filter that is 7550-13900nm by band that a kind of measuring accuracy is high, can greatly improve signal to noise ratio (S/N ratio) is provided.
In order to achieve the above object, the infrared measurement of temperature optical filter that is 7550-13900nm by band that the utility model is designed, comprises take Si as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.
Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.
The infrared measurement of temperature optical filter that is 7550-13900nm by band that the utility model obtains, it can improve greatly signal to noise ratio (S/N ratio) in temperature survey process, improves accurate testing degree.This optical filter 50%Cut on=7550 ± 200nm, 50%Cut off=13900 ± 400nm; 7750~13400nm Tavg >=85%; 2000~7000nm, 14500~19000nm Tavg≤1%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, the infrared measurement of temperature optical filter that is 7550-13900nm by band that the present embodiment is described, comprises take Si as raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.

Claims (1)

1. an infrared measurement of temperature optical filter that is 7550-13900nm by band, comprises take Si as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.
CN201320777758.7U 2013-11-29 2013-11-29 Infrared temperature measurement optical filter with passband of 7550-13900nm Withdrawn - After Issue CN203551819U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103713347A (en) * 2013-11-29 2014-04-09 杭州麦乐克电子科技有限公司 Infrared temperature measuring filter with passing band of 7550-13900 nm
CN105589121A (en) * 2015-12-30 2016-05-18 杭州麦乐克电子科技有限公司 Infrared optical filter for infrared sensing element
CN105700053A (en) * 2015-12-30 2016-06-22 杭州麦乐克电子科技有限公司 Infrared detection optical filter

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103713347A (en) * 2013-11-29 2014-04-09 杭州麦乐克电子科技有限公司 Infrared temperature measuring filter with passing band of 7550-13900 nm
CN103713347B (en) * 2013-11-29 2016-02-10 杭州麦乐克电子科技有限公司 By the infrared measurement of temperature optical filter that band is 7550-13900nm
CN105589121A (en) * 2015-12-30 2016-05-18 杭州麦乐克电子科技有限公司 Infrared optical filter for infrared sensing element
CN105700053A (en) * 2015-12-30 2016-06-22 杭州麦乐克电子科技有限公司 Infrared detection optical filter

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Granted publication date: 20140416

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C25 Abandonment of patent right or utility model to avoid double patenting