CN204374475U - 7600nm long-pass infrared filtering sensitive element - Google Patents
7600nm long-pass infrared filtering sensitive element Download PDFInfo
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- CN204374475U CN204374475U CN201420758546.9U CN201420758546U CN204374475U CN 204374475 U CN204374475 U CN 204374475U CN 201420758546 U CN201420758546 U CN 201420758546U CN 204374475 U CN204374475 U CN 204374475U
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Abstract
The utility model discloses a kind of 7600nm long-pass infrared filtering sensitive element, comprising with Ge is raw-material substrate, be the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer with Ge, ZnS for the first filming layer with Ge, ZnS.A kind of 7600nm long-pass infrared filtering sensitive element that the utility model obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.This optical filtering sensitive element 50%Cut on=7600 ± 50nm, 7700 ~ 11000nm, Tavg >=90%, 8000 ~ 11000nm, T >=88%, 1500 ~ 7400nm, T≤3%.
Description
Technical field
The utility model relates to infrared filtering sensitive element field, especially a kind of 7600nm long-pass infrared filtering sensitive element.
Background technology
Infrared thermography (thermal imaging system or infrared thermography) detects infrared energy (heat) by noncontact, and be converted into electric signal, and then Heat of Formation image and temperature value over the display, and a kind of checkout equipment that can calculate temperature value.Infrared thermography (thermal imaging system or infrared thermography) can, by the heat precise quantification that detects or measurement, make you observe heat picture, accurately can also identify and Exact Analysis the fault zone of heating.
The detector of infrared thermography is the key realizing infrared energy (heat energy) switching electrical signals, the infrared energy (heat energy) sent due to various biology is different, so in order to observe the heat picture of certain particular organisms in routine use, people often add infrared filtering sensitive element in detector, detector can be made only to accept the infrared energy (heat energy) of specific band by infrared filtering sensitive element, ensure the imaging results of infrared thermography.
But current infrared filtering sensitive element, its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.
Utility model content
The purpose of this utility model is deficiency in order to solve above-mentioned technology and provides the 7600nm long-pass infrared filtering sensitive element that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio).
In order to achieve the above object, a kind of 7600nm long-pass infrared filtering sensitive element designed by the utility model, comprising with Ge is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 165nm thickness from inside to outside, the ZnS layer of 237nm thickness, the Ge layer of 223nm thickness, the ZnS layer of 411nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 338nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 171nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 157nm thickness, the ZnS layer of 499nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 125nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 391nm thickness, the ZnS layer of 178nm thickness, the Ge layer of 166nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 131nm thickness, the ZnS layer of 623nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 310nm thickness, the ZnS layer of 498nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 583nm thickness, the Ge layer of 191nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 344nm thickness, the ZnS layer of 888nm thickness, the Ge layer of 69nm thickness, the ZnS layer of 291nm thickness, the Ge layer of 49nm thickness, the ZnS layer of 402nm thickness, the Ge layer of 614nm thickness, the ZnS layer of 949nm thickness, the second described film plating layer is arranged in order the Ge layer including 178nm thickness from inside to outside, the ZnS layer of 371nm thickness, the Ge layer of 309nm thickness, the ZnS layer of 614nm thickness, the Ge layer of 381nm thickness, the ZnS layer of 530nm thickness, the Ge layer of 264nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 94nm thickness, the ZnS layer of 549nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 654nm thickness, the Ge layer of 347nm thickness, the ZnS layer of 802nm thickness, the Ge layer of 274nm thickness, the ZnS layer of 663nm thickness, the Ge layer of 411nm thickness, the ZnS layer of 736nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 576nm thickness, the Ge layer of 525nm thickness, the ZnS layer of 653nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 558nm thickness, the ZnS layer of 1070nm thickness.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
A kind of 7600nm long-pass infrared filtering sensitive element that the utility model obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.This optical filtering sensitive element 50%Cut on=7600 ± 50nm, 7700 ~ 11000nm, Tavg >=90%, 8000 ~ 11000nm, T >=88%, 1500 ~ 7400nm, T≤3%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate 2, second film plating layer 3.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1.
As Fig. 1, shown in Fig. 2, a kind of 7600nm long-pass infrared filtering sensitive element that the present embodiment describes, comprising with Ge is raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 165nm thickness from inside to outside, the ZnS layer of 237nm thickness, the Ge layer of 223nm thickness, the ZnS layer of 411nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 338nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 171nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 157nm thickness, the ZnS layer of 499nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 125nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 391nm thickness, the ZnS layer of 178nm thickness, the Ge layer of 166nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 131nm thickness, the ZnS layer of 623nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 310nm thickness, the ZnS layer of 498nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 583nm thickness, the Ge layer of 191nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 344nm thickness, the ZnS layer of 888nm thickness, the Ge layer of 69nm thickness, the ZnS layer of 291nm thickness, the Ge layer of 49nm thickness, the ZnS layer of 402nm thickness, the Ge layer of 614nm thickness, the ZnS layer of 949nm thickness, the second described film plating layer 3 is arranged in order the Ge layer including 178nm thickness from inside to outside, the ZnS layer of 371nm thickness, the Ge layer of 309nm thickness, the ZnS layer of 614nm thickness, the Ge layer of 381nm thickness, the ZnS layer of 530nm thickness, the Ge layer of 264nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 94nm thickness, the ZnS layer of 549nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 654nm thickness, the Ge layer of 347nm thickness, the ZnS layer of 802nm thickness, the Ge layer of 274nm thickness, the ZnS layer of 663nm thickness, the Ge layer of 411nm thickness, the ZnS layer of 736nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 576nm thickness, the Ge layer of 525nm thickness, the ZnS layer of 653nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 558nm thickness, the ZnS layer of 1070nm thickness.
Claims (1)
1. a 7600nm long-pass infrared filtering sensitive element, comprising with Ge is raw-material substrate (2), with Ge, ZnS is the first filming layer (1) and with Ge, ZnS is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 165nm thickness from inside to outside, the ZnS layer of 237nm thickness, the Ge layer of 223nm thickness, the ZnS layer of 411nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 338nm thickness, the Ge layer of 137nm thickness, the ZnS layer of 254nm thickness, the Ge layer of 171nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 157nm thickness, the ZnS layer of 499nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 125nm thickness, the ZnS layer of 273nm thickness, the Ge layer of 391nm thickness, the ZnS layer of 178nm thickness, the Ge layer of 166nm thickness, the ZnS layer of 487nm thickness, the Ge layer of 131nm thickness, the ZnS layer of 623nm thickness, the Ge layer of 183nm thickness, the ZnS layer of 263nm thickness, the Ge layer of 310nm thickness, the ZnS layer of 498nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 583nm thickness, the Ge layer of 191nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 344nm thickness, the ZnS layer of 888nm thickness, the Ge layer of 69nm thickness, the ZnS layer of 291nm thickness, the Ge layer of 49nm thickness, the ZnS layer of 402nm thickness, the Ge layer of 614nm thickness, the ZnS layer of 949nm thickness, described the second film plating layer (3) is arranged in order the Ge layer including 178nm thickness from inside to outside, the ZnS layer of 371nm thickness, the Ge layer of 309nm thickness, the ZnS layer of 614nm thickness, the Ge layer of 381nm thickness, the ZnS layer of 530nm thickness, the Ge layer of 264nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 94nm thickness, the ZnS layer of 549nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 654nm thickness, the Ge layer of 347nm thickness, the ZnS layer of 802nm thickness, the Ge layer of 274nm thickness, the ZnS layer of 663nm thickness, the Ge layer of 411nm thickness, the ZnS layer of 736nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 576nm thickness, the Ge layer of 525nm thickness, the ZnS layer of 653nm thickness, the Ge layer of 240nm thickness, the ZnS layer of 575nm thickness, the Ge layer of 558nm thickness, the ZnS layer of 1070nm thickness.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420758546.9U CN204374475U (en) | 2014-12-07 | 2014-12-07 | 7600nm long-pass infrared filtering sensitive element |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420758546.9U CN204374475U (en) | 2014-12-07 | 2014-12-07 | 7600nm long-pass infrared filtering sensitive element |
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| CN204374475U true CN204374475U (en) | 2015-06-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597543A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 7600 nm long-wave pass infrared filtering sensitive element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597543A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 7600 nm long-wave pass infrared filtering sensitive element |
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| C14 | Grant of patent or utility model | ||
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| CP03 | Change of name, title or address |
Address after: 310000 two, 6, 503 Xingguo Road, Yuhang District, Hangzhou, Zhejiang. Patentee after: Hangzhou Mai peak Polytron Technologies Inc Address before: 311188 Xingguo Road, Qianjiang Economic Development Zone, Hangzhou, Zhejiang 503-2-101 Patentee before: Multi IR Optoelectronics Co., Ltd. |