CN205450325U - Infrared detection filter lens - Google Patents
Infrared detection filter lens Download PDFInfo
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- CN205450325U CN205450325U CN201521130555.4U CN201521130555U CN205450325U CN 205450325 U CN205450325 U CN 205450325U CN 201521130555 U CN201521130555 U CN 201521130555U CN 205450325 U CN205450325 U CN 205450325U
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Abstract
The utility model discloses an infrared detection filter lens, including using the base plate of si as raw and other materials to ge, znS are the first filming layer and use C as second coating film layer, just the base plate is located between the first filming layer and the second coating film layer. The utility model relates to an infrared detection filter lens, it is at the temperature measurement in -process, and improvement SNR that can be great improves the test precision, is suitable for on a large scale popularization and use. This light filter 5%Cut on=5500 400nm, 7500~13500nm, tavg >= 70%, 1500~4000nm, 1.0%, 4000~5000nm of tavg <= 0.1%, T <=, tavg <= 0.5%.
Description
Technical field
This utility model relates to infrared fileter field, especially a kind of infrared detection filter lens.
Background technology
Infrared thermography (thermal imaging system or infrared thermography) is by noncontact detection infrared energy (heat), and it is converted into the signal of telecommunication, and then generate heat picture and temperature value over the display, it is possible to a kind of detection equipment that temperature value is calculated.The heat precise quantification detected or measurement can be made you can not only observe heat picture by infrared thermography (thermal imaging system or infrared thermography), additionally it is possible to accurately identify the fault zone of heating and Exact Analysis.
The detector of infrared thermography is the key realizing infrared energy (heat energy) converted electrical number, the infrared energy (heat energy) issued due to various biologies is different, so in order to observe the heat picture of certain particular organisms in routine use, people often add infrared fileter in detector, detector can be made only to accept the infrared energy (heat energy) of specific band by infrared fileter, it is ensured that the imaging results of infrared thermography.
But, current infrared fileter, its signal to noise ratio is low, low precision, it is impossible to meet the needs of market development.
Utility model content
The purpose of this utility model is to provide the infrared detection filter lens that a kind of measuring accuracy is high, signal to noise ratio can be greatly improved to solve the deficiency of above-mentioned technology.
nullIn order to achieve the above object，Infrared detection filter lens designed by this utility model，Including being raw-material substrate with Si、The first filming layer and with the second film plating layer，And described substrate is located between the first filming layer and the second film plating layer，It is characterized in that described the first filming layer is arranged in order the Ge layer including 300nm thickness from inside to outside、The ZnS layer of 187nm thickness、The Ge layer of 184nm thickness、The ZnS layer of 147nm thickness、The Ge layer of 123nm thickness、The ZnS layer of 231nm thickness、The Ge layer of 91nm thickness、The ZnS layer of 170nm thickness、The Ge layer of 110nm thickness、The ZnS layer of 188nm thickness、The Ge layer of 109nm thickness、The ZnS layer of 219nm thickness、The Ge layer of 94nm thickness、The ZnS layer of 200nm thickness、The Ge layer of 157nm thickness、The ZnS layer of 223nm thickness、The Ge layer of 127nm thickness、The ZnS layer of 269nm thickness、The Ge layer of 171nm thickness、The ZnS layer of 253nm thickness、The Ge layer of 143nm thickness、The ZnS layer of 266nm thickness、The Ge layer of 141nm thickness、The ZnS layer of 236nm thickness、The Ge layer of 167nm thickness、The ZnS layer of 314nm thickness、The Ge layer of 118nm thickness、The ZnS layer of 228nm thickness、The Ge layer of 156nm thickness、The ZnS layer of 403nm thickness、The Ge layer of 146nm thickness、The ZnS layer of 390nm thickness、The Ge layer of 178nm thickness、The ZnS layer of 424nm thickness、The Ge layer of 193nm thickness、The ZnS layer of 291nm thickness、The Ge layer of 194nm thickness、375nm thickness ZnS layer、The Ge layer of 238nm thickness、The ZnS layer of 450nm thickness、The Ge layer of 201nm thickness、The ZnS layer of 391nm thickness、The Ge layer of 206nm thickness、The ZnS layer of 401nm thickness、The Ge layer of 284nm thickness、The ZnS layer of 479nm thickness、The Ge layer of 279nm thickness、The ZnS layer of 574nm thickness、The Ge layer of 269nm thickness、The ZnS layer of 507nm thickness、The Ge layer of 327nm thickness、The ZnS layer of 474nm thickness、The Ge layer of 283nm thickness、The ZnS layer of 685nm thickness、The Ge layer of 239nm thickness、The ZnS layer of 544nm thickness、The Ge layer of 497nm thickness、The ZnS layer of 206nm thickness、The Ge layer of 465nm thickness、The ZnS layer of 1155nm thickness，The described C layer that the second film plating layer is 1100nm thickness.Described substrate is the one side convex lens of diameter 3cm, and its projecting surface contacts with the first filming layer, and the protrusion radius of projecting surface is 4.3cm.
The thickness that above-mentioned each material is corresponding, its permission changes in the margin of tolerance, and scope of its change belongs to the scope of this patent protection, for identity relation.Generally the tolerance of thickness is at about 10nm.
A kind of infrared detection filter lens obtained by this utility model, it is in temperature taking process, can be greatly improved signal to noise ratio, improves accurate testing degree, is suitable for promoting on a large scale and using.The most also substrate is set to one side convex lens, further increases Detection results, this optical filter 5%Cuton=5500 ± 400nm, 7500～13500nm, Tavg >=70%, 1500～4000nm, Tavg≤0.1%, T≤1.0%, 4000～5000nm, Tavg≤0.5%.
Accompanying drawing explanation
Fig. 1 is embodiment overall structure schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate the 2, second film plating layer 3.
Detailed description of the invention
The utility model will be further described to combine accompanying drawing below by embodiment.
Embodiment 1.
nullSuch as Fig. 1、Shown in Fig. 2，The infrared detection filter lens that the present embodiment describes，Including being raw-material substrate 2 with Si、The first filming layer 1 and with the second film plating layer 3，And described substrate 2 is located between the first filming layer 1 and the second film plating layer 3，It is characterized in that described the first filming layer 1 is arranged in order the Ge layer including 300nm thickness from inside to outside、The ZnS layer of 187nm thickness、The Ge layer of 184nm thickness、The ZnS layer of 147nm thickness、The Ge layer of 123nm thickness、The ZnS layer of 231nm thickness、The Ge layer of 91nm thickness、The ZnS layer of 170nm thickness、The Ge layer of 110nm thickness、The ZnS layer of 188nm thickness、The Ge layer of 109nm thickness、The ZnS layer of 219nm thickness、The Ge layer of 94nm thickness、The ZnS layer of 200nm thickness、The Ge layer of 157nm thickness、The ZnS layer of 223nm thickness、The Ge layer of 127nm thickness、The ZnS layer of 269nm thickness、The Ge layer of 171nm thickness、The ZnS layer of 253nm thickness、The Ge layer of 143nm thickness、The ZnS layer of 266nm thickness、The Ge layer of 141nm thickness、The ZnS layer of 236nm thickness、The Ge layer of 167nm thickness、The ZnS layer of 314nm thickness、The Ge layer of 118nm thickness、The ZnS layer of 228nm thickness、The Ge layer of 156nm thickness、The ZnS layer of 403nm thickness、The Ge layer of 146nm thickness、The ZnS layer of 390nm thickness、The Ge layer of 178nm thickness、The ZnS layer of 424nm thickness、The Ge layer of 193nm thickness、The ZnS layer of 291nm thickness、The Ge layer of 194nm thickness、375nm thickness ZnS layer、The Ge layer of 238nm thickness、The ZnS layer of 450nm thickness、The Ge layer of 201nm thickness、The ZnS layer of 391nm thickness、The Ge layer of 206nm thickness、The ZnS layer of 401nm thickness、The Ge layer of 284nm thickness、The ZnS layer of 479nm thickness、The Ge layer of 279nm thickness、The ZnS layer of 574nm thickness、The Ge layer of 269nm thickness、The ZnS layer of 507nm thickness、The Ge layer of 327nm thickness、The ZnS layer of 474nm thickness、The Ge layer of 283nm thickness、The ZnS layer of 685nm thickness、The Ge layer of 239nm thickness、The ZnS layer of 544nm thickness、The Ge layer of 497nm thickness、The ZnS layer of 206nm thickness、The Ge layer of 465nm thickness、The ZnS layer of 1155nm thickness，The described C layer that the second film plating layer 3 is 1100nm thickness.The described one side convex lens that substrate 2 is diameter 3cm, its projecting surface contacts with the first filming layer, and the protrusion radius of projecting surface is 4.3cm.
Claims (1)
- null1. an infrared detection filter lens，Including being raw-material substrate (2) with Si、The first filming layer (1) and with the second film plating layer (3)，And described substrate (2) is located between the first filming layer (1) and the second film plating layer (3)，It is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 300nm thickness from inside to outside、The ZnS layer of 187nm thickness、The Ge layer of 184nm thickness、The ZnS layer of 147nm thickness、The Ge layer of 123nm thickness、The ZnS layer of 231nm thickness、The Ge layer of 91nm thickness、The ZnS layer of 170nm thickness、The Ge layer of 110nm thickness、The ZnS layer of 188nm thickness、The Ge layer of 109nm thickness、The ZnS layer of 219nm thickness、The Ge layer of 94nm thickness、The ZnS layer of 200nm thickness、The Ge layer of 157nm thickness、The ZnS layer of 223nm thickness、The Ge layer of 127nm thickness、The ZnS layer of 269nm thickness、The Ge layer of 171nm thickness、The ZnS layer of 253nm thickness、The Ge layer of 143nm thickness、The ZnS layer of 266nm thickness、The Ge layer of 141nm thickness、The ZnS layer of 236nm thickness、The Ge layer of 167nm thickness、The ZnS layer of 314nm thickness、The Ge layer of 118nm thickness、The ZnS layer of 228nm thickness、The Ge layer of 156nm thickness、The ZnS layer of 403nm thickness、The Ge layer of 146nm thickness、The ZnS layer of 390nm thickness、The Ge layer of 178nm thickness、The ZnS layer of 424nm thickness、The Ge layer of 193nm thickness、The ZnS layer of 291nm thickness、The Ge layer of 194nm thickness、375nm thickness ZnS layer、The Ge layer of 238nm thickness、The ZnS layer of 450nm thickness、The Ge layer of 201nm thickness、The ZnS layer of 391nm thickness、The Ge layer of 206nm thickness、The ZnS layer of 401nm thickness、The Ge layer of 284nm thickness、The ZnS layer of 479nm thickness、The Ge layer of 279nm thickness、The ZnS layer of 574nm thickness、The Ge layer of 269nm thickness、The ZnS layer of 507nm thickness、The Ge layer of 327nm thickness、The ZnS layer of 474nm thickness、The Ge layer of 283nm thickness、The ZnS layer of 685nm thickness、The Ge layer of 239nm thickness、The ZnS layer of 544nm thickness、The Ge layer of 497nm thickness、The ZnS layer of 206nm thickness、The Ge layer of 465nm thickness、The ZnS layer of 1155nm thickness，The described C layer that the second film plating layer (3) is 1100nm thickness，Described substrate is the one side convex lens of diameter 3cm，Its projecting surface contacts with the first filming layer，And the protrusion radius of projecting surface is 4.3cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521130555.4U CN205450325U (en) | 2015-12-30 | 2015-12-30 | Infrared detection filter lens |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521130555.4U CN205450325U (en) | 2015-12-30 | 2015-12-30 | Infrared detection filter lens |
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| Publication Number | Publication Date |
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| CN205450325U true CN205450325U (en) | 2016-08-10 |
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| CN201521130555.4U Active CN205450325U (en) | 2015-12-30 | 2015-12-30 | Infrared detection filter lens |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487155A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared detection filtering lens |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487155A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared detection filtering lens |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: Multi IR Optoelectronics Co., Ltd. |