CN203551827U - Infrared measuring temperature filter with pass band of 7600-9900 nm - Google Patents
Infrared measuring temperature filter with pass band of 7600-9900 nm Download PDFInfo
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- CN203551827U CN203551827U CN201320777889.5U CN201320777889U CN203551827U CN 203551827 U CN203551827 U CN 203551827U CN 201320777889 U CN201320777889 U CN 201320777889U CN 203551827 U CN203551827 U CN 203551827U
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- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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Abstract
The utility model refers to an infrared measuring temperature filter with a pass band of 7600-9900 nm, which has high test precision and can greatly raise a signal to noise ratio. The infrared measuring temperature filter comprises a substrate with G e as a raw material, a first coating film layer of G e and ZnS and a second coating film layer of G e and ZnS; the substrate is located between the first coating film layer and the second coating film layer. The infrared measuring temperature filter with a pass band of 7600-9900 nm can greatly raise the signal to noise ratio and test precision in a temperature measuring process. The infrared measuring temperature filter satisfies the following relations: 50% Cut on=7.6 +/- 0.05 [mu] m, 50% Cut off=9.9 +/- 0.05 [mu] m; 1500-7100 nm, 10300-12000 nm T<=3%; 8000-9500 nm T>=88%; 7700-9700 nm Tavg>=90%.
Description
Technical field
The utility model relates to infrared fileter field, especially a kind of infrared measurement of temperature optical filter that is 7600-9900nm by band.
Background technology
Infrared thermometer is partly comprised of optical system, detector, signal amplifier and signal processing, demonstration output etc.Optical system converges the Infrared Targets energy (heat) in its visual field, and the size of visual field is by optical element and the location positioning thereof of temperature measurer.Infrared energy focuses on detector and changes corresponding electric signal into.This signal process amplifier and signal processing circuit, and according to changing the temperature value of measured target after the algorithm in instrument and the correction of target emissivity into.
The detector of infrared thermometer is the key that realizes infrared energy (heat energy) switching electrical signals, the infrared energy (heat) sending due to various biologies is different, so in routine use in order to observe the temperature value of certain particular organisms, people tend to add infrared fileter in detector, by infrared fileter, can make detector only accept the infrared energy of specific band, guarantee the temperature-measuring results of infrared thermometer, for thermometric and imaging.
But, the infrared measurement of temperature optical filter that current is 7600-9900nm by band, its signal to noise ratio (S/N ratio) is low, and low precision can not meet the needs of market development.
Utility model content
The purpose of this utility model is to provide in order to solve the deficiency of above-mentioned technology the infrared measurement of temperature optical filter that is 7600-9900nm by band that a kind of measuring accuracy is high, can greatly improve signal to noise ratio (S/N ratio).
In order to achieve the above object, the infrared measurement of temperature optical filter that is 7600-9900nm by band that the utility model is designed, comprises and take Ge as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 142nm thickness, the ZnS layer of 250nm thickness, the Ge layer of 175nm thickness, the ZnS layer of 223nm thickness, the Ge layer of 91nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 119nm thickness, the ZnS layer of 341nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 275nm thickness, the Ge layer of 188nm thickness, the ZnS layer of 344nm thickness, the Ge layer of 162nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 199nm thickness, the ZnS layer of 314nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 288nm thickness, the Ge layer of 282nm thickness, the ZnS layer of 335nm thickness, the Ge layer of 369nm thickness, the ZnS layer of 243nm thickness, the Ge layer of 285nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 323nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 359nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 693nm thickness, the Ge layer of 169nm thickness, the ZnS layer of 656nm thickness, the Ge layer of 283nm thickness, the ZnS layer of 685nm thickness, the Ge layer of 299nm thickness, the ZnS layer of 669nm thickness, the Ge layer of 317nm thickness, the ZnS layer of 602nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 783nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 739nm thickness, the Ge layer of 464nm thickness and the ZnS layer of 1078nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the ZnS layer of 1686nm thickness, the Ge layer of 981nm thickness, the ZnS layer of 283nm thickness, the Ge layer of 693nm thickness, the ZnS layer of 1795nm thickness, the Ge layer of 613nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1149nm thickness, the ZnS layer of 591nm thickness, the Ge layer of 760nm thickness, the ZnS layer of 304nm thickness, the Ge layer of 1225nm thickness, the ZnS layer of 591nm thickness, the Ge layer of 684nm thickness, the ZnS layer of 1786nm thickness, the Ge layer of 656nm thickness, the ZnS layer of 337nm thickness, the Ge layer of 922nm thickness and the ZnS layer of 720nm thickness.
Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.
The infrared measurement of temperature optical filter that the utility model is resulting is 7600-9900nm by band, it can improve greatly signal to noise ratio (S/N ratio) in temperature survey process, improves accurate testing degree.This optical filter 50%Cut on=7.6 ± 0.05um, 50%Cut off=9.9 ± 0.05um; 1500～7100nm, 10300～12000nm T≤3%; 8000～9500nm T >=88%; 7700～9700nm Tavg >=90%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, the infrared measurement of temperature optical filter that is 7600-9900nm by band that the present embodiment is described, comprises and take Ge as raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 142nm thickness, the ZnS layer of 250nm thickness, the Ge layer of 175nm thickness, the ZnS layer of 223nm thickness, the Ge layer of 91nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 119nm thickness, the ZnS layer of 341nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 275nm thickness, the Ge layer of 188nm thickness, the ZnS layer of 344nm thickness, the Ge layer of 162nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 199nm thickness, the ZnS layer of 314nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 288nm thickness, the Ge layer of 282nm thickness, the ZnS layer of 335nm thickness, the Ge layer of 369nm thickness, the ZnS layer of 243nm thickness, the Ge layer of 285nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 323nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 359nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 693nm thickness, the Ge layer of 169nm thickness, the ZnS layer of 656nm thickness, the Ge layer of 283nm thickness, the ZnS layer of 685nm thickness, the Ge layer of 299nm thickness, the ZnS layer of 669nm thickness, the Ge layer of 317nm thickness, the ZnS layer of 602nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 783nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 739nm thickness, the Ge layer of 464nm thickness and the ZnS layer of 1078nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the ZnS layer of 1686nm thickness, the Ge layer of 981nm thickness, the ZnS layer of 283nm thickness, the Ge layer of 693nm thickness, the ZnS layer of 1795nm thickness, the Ge layer of 613nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1149nm thickness, the ZnS layer of 591nm thickness, the Ge layer of 760nm thickness, the ZnS layer of 304nm thickness, the Ge layer of 1225nm thickness, the ZnS layer of 591nm thickness, the Ge layer of 684nm thickness, the ZnS layer of 1786nm thickness, the Ge layer of 656nm thickness, the ZnS layer of 337nm thickness, the Ge layer of 922nm thickness and the ZnS layer of 720nm thickness.
Claims (1)
1. an infrared measurement of temperature optical filter that is 7600-9900nm by band, comprises and take Ge as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 142nm thickness, the ZnS layer of 250nm thickness, the Ge layer of 175nm thickness, the ZnS layer of 223nm thickness, the Ge layer of 91nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 119nm thickness, the ZnS layer of 341nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 275nm thickness, the Ge layer of 188nm thickness, the ZnS layer of 344nm thickness, the Ge layer of 162nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 199nm thickness, the ZnS layer of 314nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 288nm thickness, the Ge layer of 282nm thickness, the ZnS layer of 335nm thickness, the Ge layer of 369nm thickness, the ZnS layer of 243nm thickness, the Ge layer of 285nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 323nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 359nm thickness, the ZnS layer of 363nm thickness, the Ge layer of 161nm thickness, the ZnS layer of 693nm thickness, the Ge layer of 169nm thickness, the ZnS layer of 656nm thickness, the Ge layer of 283nm thickness, the ZnS layer of 685nm thickness, the Ge layer of 299nm thickness, the ZnS layer of 669nm thickness, the Ge layer of 317nm thickness, the ZnS layer of 602nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 783nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 739nm thickness, the Ge layer of 464nm thickness and the ZnS layer of 1078nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the ZnS layer of 1686nm thickness, the Ge layer of 981nm thickness, the ZnS layer of 283nm thickness, the Ge layer of 693nm thickness, the ZnS layer of 1795nm thickness, the Ge layer of 613nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1149nm thickness, the ZnS layer of 591nm thickness, the Ge layer of 760nm thickness, the ZnS layer of 304nm thickness, the Ge layer of 1225nm thickness, the ZnS layer of 591nm thickness, the Ge layer of 684nm thickness, the ZnS layer of 1786nm thickness, the Ge layer of 656nm thickness, the ZnS layer of 337nm thickness, the Ge layer of 922nm thickness and the ZnS layer of 720nm thickness.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320777889.5U CN203551827U (en) | 2013-11-29 | 2013-11-29 | Infrared measuring temperature filter with pass band of 7600-9900 nm |
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| CN201320777889.5U CN203551827U (en) | 2013-11-29 | 2013-11-29 | Infrared measuring temperature filter with pass band of 7600-9900 nm |
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| CN203551827U true CN203551827U (en) | 2014-04-16 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103698831A (en) * | 2013-11-29 | 2014-04-02 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with pass band of 7,600 to 9,900 nm |
| CN104597543A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 7600 nm long-wave pass infrared filtering sensitive element |
| CN105700053A (en) * | 2015-12-30 | 2016-06-22 | 杭州麦乐克电子科技有限公司 | Infrared detection optical filter |
| CN106199803A (en) * | 2016-07-25 | 2016-12-07 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
-
2013
- 2013-11-29 CN CN201320777889.5U patent/CN203551827U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103698831A (en) * | 2013-11-29 | 2014-04-02 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with pass band of 7,600 to 9,900 nm |
| CN103698831B (en) * | 2013-11-29 | 2016-04-27 | 杭州麦乐克电子科技有限公司 | By the infrared measurement of temperature optical filter that band is 7600-9900nm |
| CN104597543A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 7600 nm long-wave pass infrared filtering sensitive element |
| CN105700053A (en) * | 2015-12-30 | 2016-06-22 | 杭州麦乐克电子科技有限公司 | Infrared detection optical filter |
| CN106199803A (en) * | 2016-07-25 | 2016-12-07 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| CN106199803B (en) * | 2016-07-25 | 2018-11-06 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
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