CN103713347B - By the infrared measurement of temperature optical filter that band is 7550-13900nm - Google Patents
By the infrared measurement of temperature optical filter that band is 7550-13900nm Download PDFInfo
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Abstract
A kind of measuring accuracy designed by the present invention is high, greatly can improve the infrared measurement of temperature optical filter being 7550-13900nm by band of signal to noise ratio (S/N ratio), comprising with Si is raw-material substrate, be the second film plating layer with Ge, ZnS for the first filming layer with Ge, ZnS, and described substrate is between the first filming layer and the second film plating layer, it should be the infrared measurement of temperature optical filter of 7550-13900nm by band, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree.This optical filter 50%Cut? on=7550 ± 200nm, 50%Cut? off=13900 ± 400nm; 7750 ~ 13400nm? Tavg >=85%; 2000 ~ 7000nm, 14500 ~ 19000nm? Tavg≤1%.
Description
Technical field
The present invention relates to infrared fileter field, especially a kind of infrared measurement of temperature optical filter by being with as 7550-13900nm.
Background technology
Infrared thermometer is made up of optical system, detector, signal amplifier and the part such as signal transacting, display translation.Optical system converges the Infrared Targets energy (heat) in its visual field, and the size of visual field is determined by the optical element of temperature measurer and position thereof.Focus infrared energy on the detector and change corresponding electric signal into.This signal through amplifier and signal processing circuit, and changes the temperature value of measured target into after correcting according to the algorithm in instrument and backs.
The detector of infrared thermometer is the key realizing infrared energy (heat energy) switching electrical signals, the infrared energy (heat) sent due to various biology is different, so in order to observe the temperature value of certain particular organisms in routine use, people often add infrared fileter in detector, detector can be made only to accept the infrared energy of specific band by infrared fileter, ensure the temperature-measuring results of infrared thermometer, for thermometric and imaging.
But current passes through the infrared measurement of temperature optical filter that band is 7550-13900nm, and its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.
Summary of the invention
The object of the invention is the deficiency in order to solve above-mentioned technology and provide that a kind of measuring accuracy is high, what greatly can improve signal to noise ratio (S/N ratio) is the infrared measurement of temperature optical filter of 7550-13900nm by band.
In order to achieve the above object, passing through designed by the present invention is with the infrared measurement of temperature optical filter for 7550-13900nm, and comprising with Si is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order from inside to outside and includes: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described second film plating layer is arranged in order from inside to outside and includes: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
What the present invention obtained passes through the infrared measurement of temperature optical filter that band is 7550-13900nm, and it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree.This optical filter 50%Cuton=7550 ± 200nm, 50%Cutoff=13900 ± 400nm; 7750 ~ 13400nmTavg >=85%; 2000 ~ 7000nm, 14500 ~ 19000nmTavg≤1%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, what the present embodiment described passes through the infrared measurement of temperature optical filter that band is 7550-13900nm, and comprising with Si is raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order from inside to outside and includes: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described second film plating layer 3 is arranged in order from inside to outside and includes: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.
Claims (1)
1. be an infrared measurement of temperature optical filter of 7550-13900nm by band, comprising with Si is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order from inside to outside and includes: the Ge layer of 411nm thickness, the ZnS layer of 271nm thickness, the Ge layer of 356nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 187nm thickness, the ZnS layer of 346nm thickness, the Ge layer of 156nm thickness, the ZnS layer of 322nm thickness, the Ge layer of 159nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 194nm thickness, the ZnS layer of 293nm thickness, the Ge layer of 167nm thickness, the ZnS layer of 317nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 289nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 391nm thickness, the Ge layer of 180nm thickness, the ZnS layer of 231nm thickness, the Ge layer of 302nm thickness, the ZnS layer of 404nm thickness, the Ge layer of 353nm thickness, the ZnS layer of 312nm thickness, the Ge layer of 259nm thickness, the ZnS layer of 310nm thickness, the Ge layer of 382nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 373nm thickness, the ZnS layer of 302nm thickness, the Ge layer of 276nm thickness, the ZnS layer of 331nm thickness, the Ge layer of 350nm thickness, the ZnS layer of 390nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 571nm thickness, the Ge layer of 281nm thickness, the ZnS layer of 751nm thickness, the Ge layer of 366nm thickness, the ZnS layer of 462nm thickness, the Ge layer of 439nm thickness, the ZnS layer of 806nm thickness, the Ge layer of 178nm thickness, the ZnS layer of 963nm thickness, the Ge layer of 427nm thickness, the ZnS layer of 311nm thickness, the Ge layer of 410nm thickness, the ZnS layer of 489nm thickness, the Ge layer of 546nm thickness and the ZnS layer of 358nm thickness, described second film plating layer is arranged in order from inside to outside and includes: the Ge layer of 145nm thickness, the ZnS layer of 290nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 1953nm thickness, the Ge layer of 357nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 607nm thickness, the ZnS layer of 2262nm thickness, the Ge layer of 982nm thickness, the ZnS layer of 247nm thickness, the Ge layer of 247nm thickness, the ZnS layer of 631nm thickness, the Ge layer of 1257nm thickness, the ZnS layer of 1587nm thickness, the Ge layer of 105nm thickness, the ZnS layer of 558nm thickness, the Ge layer of 292nm thickness, the ZnS layer of 145nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 2315nm thickness, the Ge layer of 897nm thickness, the ZnS layer of 195nm thickness, the Ge layer of 312nm thickness, the ZnS layer of 590nm thickness, the Ge layer of 1263nm thickness, the ZnS layer of 1976nm thickness, the Ge layer of 168nm thickness, the ZnS layer of 298nm thickness, the Ge layer of 477nm thickness and the ZnS layer of 1175nm thickness.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104597543A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 7600 nm long-wave pass infrared filtering sensitive element |
| CN106199803B (en) * | 2016-07-25 | 2018-11-06 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| EP3598105A1 (en) | 2018-07-20 | 2020-01-22 | Omya International AG | Method for detecting phosphate and/or sulphate salts on the surface of a substrate or within a substrate, use of a lwir detecting device and a lwir imaging system |
| CN110146948B (en) * | 2018-11-26 | 2021-05-11 | 上海欧菲尔光电技术有限公司 | Silicon substrate long-wave pass infrared filter and preparation method thereof |
| EP3855162A1 (en) | 2020-01-21 | 2021-07-28 | Omya International AG | Lwir imaging system for detecting an amorphous and/or crystalline structure of phosphate and/or sulphate salts on the surface of a substrate or within a substrate and use of the lwir imaging system |
| WO2022136490A1 (en) | 2020-12-23 | 2022-06-30 | Omya International Ag | Method and apparatus for detecting an amorphous and/or crystalline structure of phosphate and/or sulphate salts on the surface of a substrate or within a substrate |
Citations (3)
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|---|---|---|---|---|
| US4158133A (en) * | 1976-08-20 | 1979-06-12 | Siemens Aktiengesellschaft | Filters for photo-detectors |
| CN102590917A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | Infrared filter with broadband of 3.65 to 5 microns, and manufacturing method for infrared filter |
| CN203551819U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with passband of 7550-13900nm |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004317701A (en) * | 2003-04-15 | 2004-11-11 | Alps Electric Co Ltd | Multilayer film optical filter and optical component |
| US20130188254A1 (en) * | 2008-09-08 | 2013-07-25 | National Research Council Of Canada | Thin film optical filters with an integral air layer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4158133A (en) * | 1976-08-20 | 1979-06-12 | Siemens Aktiengesellschaft | Filters for photo-detectors |
| CN102590917A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | Infrared filter with broadband of 3.65 to 5 microns, and manufacturing method for infrared filter |
| CN203551819U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with passband of 7550-13900nm |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: Multi IR Optoelectronics Co., Ltd. |