CN204374474U - The logical infrared filtering sensitive element of 4430nm band - Google Patents
The logical infrared filtering sensitive element of 4430nm band Download PDFInfo
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- CN204374474U CN204374474U CN201420758415.0U CN201420758415U CN204374474U CN 204374474 U CN204374474 U CN 204374474U CN 201420758415 U CN201420758415 U CN 201420758415U CN 204374474 U CN204374474 U CN 204374474U
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Abstract
The utility model discloses a kind of 4430nm and be with logical infrared filtering sensitive element, comprising with sapphire is raw-material substrate, be the second film plating layer with Ge, SiO for the first filming layer with Ge, SiO, and described substrate is located between the first filming layer and the second film plating layer.The logical infrared filtering sensitive element of a kind of 4430nm band that the utility model obtains, its centre wavelength 4430 ± 15 nm, it, in medical infrared gas detection analytic process, can improve signal to noise ratio (S/N ratio) greatly, improve accurate testing degree, be suitable for promoting on a large scale and using.Peak transmittance Tp >=70% of this optical filtering sensitive element, bandwidth=30 ± 10nm, 400 ~ 11000 nm(are except passband), Tavg<0.1%.
Description
Technical field
The utility model relates to medical infrared gas detection optical filtering sensitive element, the logical infrared filtering sensitive element of especially a kind of 4430nm band.
Background technology
Infrared filtering sensitive element filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object easily, and namely infrared ray can not reflect through object.Utilize this characteristic ultrared, only allow the infrared ray of long wavelength pass through, the ultraviolet of filtering short wavelength and visible ray.Be applied to a lot of field, at present the signal to noise ratio (S/N ratio) of rate and cut-off region be through for the optical filtering sensitive element Problems existing used in medical infrared gas detection process not high, high-precision measurement requirement can not be met.
Utility model content
The purpose of this utility model is deficiency in order to solve above-mentioned technology and provides the logical infrared filtering sensitive element of 4430nm band that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio).
In order to achieve the above object, the logical infrared filtering sensitive element of a kind of 4430nm band designed by the utility model, comprising with sapphire is raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 214nm thickness from inside to outside, the SiO layer of 225nm thickness, the Ge layer of 215nm thickness, the SiO layer of 264nm thickness, the Ge layer of 135nm thickness, the SiO layer of 195nm thickness, the Ge layer of 94nm thickness, the SiO layer of 321nm thickness, the Ge layer of 120nm thickness, the SiO layer of 245nm thickness, the Ge layer of 143nm thickness, the SiO layer of 291nm thickness, the Ge layer of 131nm thickness, the SiO layer of 419nm thickness, the Ge layer of 240nm thickness, the SiO layer of 295nm thickness, the Ge layer of 136nm thickness, the SiO layer of 524nm thickness, the Ge layer of 236nm thickness, the SiO layer of 326nm thickness, the Ge layer of 79nm thickness, the SiO layer of 594nm thickness, the Ge layer of 363nm thickness, the SiO layer of 1116nm thickness, the Ge layer of 274nm thickness, the SiO layer of 1132nm thickness, the Ge layer of 290nm thickness, the SiO layer of 1115nm thickness, the Ge layer of 388nm thickness, the SiO layer of 571nm thickness, the second described film plating layer is arranged in order the Ge layer including 346nm thickness from inside to outside, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 1255nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 1255nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 255nm thickness, the SiO layer of 120nm thickness.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
The logical infrared filtering sensitive element of a kind of 4430nm band that the utility model obtains, its centre wavelength 4430 ± 15 nm, it, in medical infrared gas detection analytic process, can improve signal to noise ratio (S/N ratio) greatly, improve accurate testing degree, be suitable for promoting on a large scale and using.Peak transmittance Tp >=70% of this optical filtering sensitive element, bandwidth=30 ± 10nm, 400 ~ 11000 nm(are except passband), Tavg<0.1%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate 2, second film plating layer 3.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1.
As Fig. 1, shown in Fig. 2, the logical infrared filtering sensitive element of a kind of 4430nm band that the present embodiment describes, comprising with sapphire is raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 214nm thickness from inside to outside, the SiO layer of 225nm thickness, the Ge layer of 215nm thickness, the SiO layer of 264nm thickness, the Ge layer of 135nm thickness, the SiO layer of 195nm thickness, the Ge layer of 94nm thickness, the SiO layer of 321nm thickness, the Ge layer of 120nm thickness, the SiO layer of 245nm thickness, the Ge layer of 143nm thickness, the SiO layer of 291nm thickness, the Ge layer of 131nm thickness, the SiO layer of 419nm thickness, the Ge layer of 240nm thickness, the SiO layer of 295nm thickness, the Ge layer of 136nm thickness, the SiO layer of 524nm thickness, the Ge layer of 236nm thickness, the SiO layer of 326nm thickness, the Ge layer of 79nm thickness, the SiO layer of 594nm thickness, the Ge layer of 363nm thickness, the SiO layer of 1116nm thickness, the Ge layer of 274nm thickness, the SiO layer of 1132nm thickness, the Ge layer of 290nm thickness, the SiO layer of 1115nm thickness, the Ge layer of 388nm thickness, the SiO layer of 571nm thickness, the second described film plating layer 3 is arranged in order the Ge layer including 346nm thickness from inside to outside, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 1255nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 1255nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 255nm thickness, the SiO layer of 120nm thickness.
Claims (1)
1. the logical infrared filtering sensitive element of 4430nm band, comprising with sapphire is raw-material substrate (2), with Ge, SiO is the first filming layer (1) and with Ge, SiO is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 214nm thickness from inside to outside, the SiO layer of 225nm thickness, the Ge layer of 215nm thickness, the SiO layer of 264nm thickness, the Ge layer of 135nm thickness, the SiO layer of 195nm thickness, the Ge layer of 94nm thickness, the SiO layer of 321nm thickness, the Ge layer of 120nm thickness, the SiO layer of 245nm thickness, the Ge layer of 143nm thickness, the SiO layer of 291nm thickness, the Ge layer of 131nm thickness, the SiO layer of 419nm thickness, the Ge layer of 240nm thickness, the SiO layer of 295nm thickness, the Ge layer of 136nm thickness, the SiO layer of 524nm thickness, the Ge layer of 236nm thickness, the SiO layer of 326nm thickness, the Ge layer of 79nm thickness, the SiO layer of 594nm thickness, the Ge layer of 363nm thickness, the SiO layer of 1116nm thickness, the Ge layer of 274nm thickness, the SiO layer of 1132nm thickness, the Ge layer of 290nm thickness, the SiO layer of 1115nm thickness, the Ge layer of 388nm thickness, the SiO layer of 571nm thickness, described the second film plating layer (3) is arranged in order the Ge layer including 346nm thickness from inside to outside, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 1255nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 271nm thickness, the SiO layer of 1255nm thickness, the Ge layer of 271nm thickness, the SiO layer of 627nm thickness, the Ge layer of 255nm thickness, the SiO layer of 120nm thickness.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420758415.0U CN204374474U (en) | 2014-12-07 | 2014-12-07 | The logical infrared filtering sensitive element of 4430nm band |
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| CN201420758415.0U CN204374474U (en) | 2014-12-07 | 2014-12-07 | The logical infrared filtering sensitive element of 4430nm band |
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| CN204374474U true CN204374474U (en) | 2015-06-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597542A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 4430 nm band-pass infrared filtering sensitive element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104597542A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 4430 nm band-pass infrared filtering sensitive element |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: Multi IR Optoelectronics Co., Ltd. |