CN203551818U - Aviation exhaust gas detection optical filter with permeation wavelength greater than 3700nm - Google Patents
Aviation exhaust gas detection optical filter with permeation wavelength greater than 3700nm Download PDFInfo
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- CN203551818U CN203551818U CN201320777703.6U CN201320777703U CN203551818U CN 203551818 U CN203551818 U CN 203551818U CN 201320777703 U CN201320777703 U CN 201320777703U CN 203551818 U CN203551818 U CN 203551818U
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- 230000003287 optical effect Effects 0.000 title claims abstract description 15
- 238000001514 detection method Methods 0.000 title abstract 8
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 3
- 239000011247 coating layer Substances 0.000 abstract 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N germanium monoxide Inorganic materials [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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Abstract
The utility model relates to an aviation exhaust gas detection optical filter with a permeation wavelength greater than 3700nm. The aviation exhaust gas detection optical filter has high detection precision and can greatly improve a signal-to-noise ratio. The aviation exhaust gas detection optical filter comprises a base board taking germanium as a raw material, the first coating layer taking silicon and silicon monoxide as raw materials and the second coating layer taking germanium and silicon monoxide as raw materials, wherein the base board is arranged between the first coating layer and the second coating layer. The aviation exhaust gas detection optical filter with the permeation wavelength greater than 3700nm, in an aviation exhaust gas detection process, can greatly improve the signal-to-noise ratio and improve the detection precision. According to the optical filter, 50% Cut on is equal to 3700+/-50nm; in a range of 3960-4800nm, Tavg is greater than or equal to 90%; in a range of 1600-3420nm, T is smaller than or equal to 1.5%, the Tavg is smaller than or equal to 1%; in a range of 1600-2450nm, Ravg is greater than or equal to 85%; in a range of 4200-4800nm, the Ravg is smaller than or equal to 10%.
Description
Technical field
The utility model relates to infrared fileter field, and especially a kind of aviation tail gas gas seeing through more than wavelength 3700nm detects optical filter.
Background technology
Infrared fileter filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object easily, and namely infrared ray can not reflect when through object.Utilize ultrared this characteristic, only allow long wavelength's infrared ray pass through, filtering short wavelength's ultraviolet ray and visible ray.Be applied to a lot of fields, the problem existing for the optical filter using in aviation tail gas gas testing process is at present that the signal to noise ratio (S/N ratio) of transmitance and cut-off region is not high, can not meet high-precision measurement requirement.
Utility model content
The purpose of this utility model is the deficiency in order to solve above-mentioned technology and provide a kind of measuring accuracy more than wavelength 3700nm aviation tail gas gas of seeing through high, that can greatly improve signal to noise ratio (S/N ratio) to detect optical filter.
In order to achieve the above object, the aviation tail gas gas seeing through more than wavelength 3700nm that the utility model is designed detects optical filter, comprises take Ge as raw-material substrate, with Si, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the SiO layer of 165nm thickness, the Si layer of 224nm thickness, the SiO layer of 430nm thickness, the Si layer of 186nm thickness, the SiO layer of 427nm thickness, the Si layer of 204nm thickness, the SiO layer of 432nm thickness, the Si layer of 209nm thickness, the SiO layer of 420nm thickness, the Si layer of 203nm thickness, the SiO layer of 413nm thickness, the Si layer of 196nm thickness, the SiO layer of 246nm thickness, the Si layer of 113nm thickness, the SiO layer of 269nm thickness, the Si layer of 142nm thickness, the SiO layer of 426nm thickness, the Si layer of 158nm thickness, the SiO layer of 241nm thickness, the Si layer of 124nm thickness, the SiO layer of 268nm thickness, the Si layer of 144nm thickness, the SiO layer of 248nm thickness, the Si layer of 125nm thickness, the SiO layer of 244nm thickness, the Si layer of 141nm thickness, the SiO layer of 281nm thickness, the Si layer of 122nm thickness, the SiO layer of 198nm thickness, the Si layer of 168nm thickness, the SiO layer of 152nm thickness, the Si layer of 44nm thickness and the SiO layer of 579nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of 133nm thickness, the SiO layer of 47nm thickness, 106nm thickness, the SiO layer of 111nm thickness, 47nm thickness, SiO layer, the Ge layer of 12nm thickness and the SiO layer of 496nm thickness of 271nm thickness.
Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.
The aviation tail gas gas seeing through more than wavelength 3700nm that the utility model obtains detects optical filter, and it,, in aviation tail gas gas testing process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree.This optical filter 50%Cut on=3700 ± 50nm, 3960～4800nm, Tavg >=90%, 1600～3420nm, T≤1.5%, Tavg≤1%, 1600～2450nm, Ravg >=85%; 4200～4800nm, Ravg≤10%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, the aviation tail gas gas seeing through more than wavelength 3700nm that the present embodiment is described detects optical filter, comprises take Ge as raw-material substrate 2, with Si, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the SiO layer of 165nm thickness, the Si layer of 224nm thickness, the SiO layer of 430nm thickness, the Si layer of 186nm thickness, the SiO layer of 427nm thickness, the Si layer of 204nm thickness, the SiO layer of 432nm thickness, the Si layer of 209nm thickness, the SiO layer of 420nm thickness, the Si layer of 203nm thickness, the SiO layer of 413nm thickness, the Si layer of 196nm thickness, the SiO layer of 246nm thickness, the Si layer of 113nm thickness, the SiO layer of 269nm thickness, the Si layer of 142nm thickness, the SiO layer of 426nm thickness, the Si layer of 158nm thickness, the SiO layer of 241nm thickness, the Si layer of 124nm thickness, the SiO layer of 268nm thickness, the Si layer of 144nm thickness, the SiO layer of 248nm thickness, the Si layer of 125nm thickness, the SiO layer of 244nm thickness, the Si layer of 141nm thickness, the SiO layer of 281nm thickness, the Si layer of 122nm thickness, the SiO layer of 198nm thickness, the Si layer of 168nm thickness, the SiO layer of 152nm thickness, the Si layer of 44nm thickness and the SiO layer of 579nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of 133nm thickness, the SiO layer of 47nm thickness, 106nm thickness, the SiO layer of 111nm thickness, 47nm thickness, SiO layer, the Ge layer of 12nm thickness and the SiO layer of 496nm thickness of 271nm thickness.
Claims (1)
1. the aviation tail gas gas seeing through more than wavelength 3700nm detects an optical filter, comprises take Ge as raw-material substrate, with Si, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the SiO layer of 165nm thickness, the Si layer of 224nm thickness, the SiO layer of 430nm thickness, the Si layer of 186nm thickness, the SiO layer of 427nm thickness, the Si layer of 204nm thickness, the SiO layer of 432nm thickness, the Si layer of 209nm thickness, the SiO layer of 420nm thickness, the Si layer of 203nm thickness, the SiO layer of 413nm thickness, the Si layer of 196nm thickness, the SiO layer of 246nm thickness, the Si layer of 113nm thickness, the SiO layer of 269nm thickness, the Si layer of 142nm thickness, the SiO layer of 426nm thickness, the Si layer of 158nm thickness, the SiO layer of 241nm thickness, the Si layer of 124nm thickness, the SiO layer of 268nm thickness, the Si layer of 144nm thickness, the SiO layer of 248nm thickness, the Si layer of 125nm thickness, the SiO layer of 244nm thickness, the Si layer of 141nm thickness, the SiO layer of 281nm thickness, the Si layer of 122nm thickness, the SiO layer of 198nm thickness, the Si layer of 168nm thickness, the SiO layer of 152nm thickness, the Si layer of 44nm thickness and the SiO layer of 579nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of the Ge layer of the Ge layer of 133nm thickness, the SiO layer of 47nm thickness, 106nm thickness, the SiO layer of 111nm thickness, 47nm thickness, SiO layer, the Ge layer of 12nm thickness and the SiO layer of 496nm thickness of 271nm thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320777703.6U CN203551818U (en) | 2013-11-29 | 2013-11-29 | Aviation exhaust gas detection optical filter with permeation wavelength greater than 3700nm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320777703.6U CN203551818U (en) | 2013-11-29 | 2013-11-29 | Aviation exhaust gas detection optical filter with permeation wavelength greater than 3700nm |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203551818U true CN203551818U (en) | 2014-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320777703.6U Expired - Lifetime CN203551818U (en) | 2013-11-29 | 2013-11-29 | Aviation exhaust gas detection optical filter with permeation wavelength greater than 3700nm |
Country Status (1)
| Country | Link |
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| CN (1) | CN203551818U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105974505A (en) * | 2016-07-25 | 2016-09-28 | 江苏大学 | Long-wave-pass infrared filter for temperature detection and preparation method thereof |
-
2013
- 2013-11-29 CN CN201320777703.6U patent/CN203551818U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105974505A (en) * | 2016-07-25 | 2016-09-28 | 江苏大学 | Long-wave-pass infrared filter for temperature detection and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: HANGZHOU MULTI IR TECHNOLOGY CO.,LTD. Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: MULTI IR OPTOELECTRONICS Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140416 |