CN202305863U

CN202305863U - 3900-namometer long-wave-pass infrared optical filter

Info

Publication number: CN202305863U
Application number: CN2012200913707U
Authority: CN
Inventors: 吕晶
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Mai peak Polytron Technologies Inc
Priority date: 2012-03-12
Filing date: 2012-03-12
Publication date: 2012-07-04
Anticipated expiration: 2022-03-12

Abstract

The utility model discloses a 3900-namometer long-wave-pass infrared optical filter, which comprises a sapphirine substrate and a first film coating layer and a second film coating layer which are respectively positioned at two side surfaces of the substrate, wherein the first film coating layer comprises Ge layers and SiO layers which are sequentially arranged at intervals from inside to outside and are uneven in thickness; and the second film coating layer also comprises Ge layers and SiO layers which are sequentially arranged from inside to outside and uneven in thickness. Due to the design, the 3900-namometer long-wave-pass infrared optical filter disclosed by the utility model realizes good stability and can be suitable for temperature induction and measurement of objects; the 3900-namometer long-wave-pass infrared optical filter can obtain half peak wavelength positioning 3900+/-1% nanometer, can realize the purposes that the transmissivity in a cutoff region is less than 0.1 percent and the transmissivity in a transmission region can be greater than 90 percent and ensures that the signal-to-noise ratio is greatly improved; and when the 3900-namometer long-wave-pass infrared optical filter is used for temperature measurement and induction of objects, the resolution capability and the detection precision can be effectively improved, and using requirements in practical application can met better.

Description

3900 nanometer long-pass infrared fileters

Technical field

The utility model relates to a kind of infrared thermometer assembly, particularly 3900 nanometer infrared fileters.

Background technology

Infrared thermometer partly is made up of optical system, photodetector, signal amplifier and signal Processing, demonstration output etc.Photodetector converges the target infrared energy in its visual field, and the size of visual field is confirmed by the optical element and the position thereof of temperature measurer.Infrared energy focuses on the photodetector and changes corresponding electric signal into.This signal process amplifier and signal processing circuit, and according to the temperature value that changes measured target after algorithm of treating in the instrument and the correction of target emissivity into.

The photodetector of infrared thermometer is the key that realizes infrared energy (heat) switching electrical signals; Because the infrared energy (heat) that various biology sent is different; So in daily use in order to observe the temperature value of certain particular organisms; People tend in photodetector, add infrared fileter, can make photodetector only accept the infrared energy of specific band through infrared fileter, guarantee the temperature-measuring results of infrared thermometer.

But, 3900 present nanometer long-pass infrared fileters, its signal to noise ratio (S/N ratio) is low, and low precision can not satisfy the needs of market development.

The utility model content

The purpose of the utility model is the 3900 nanometer infrared fileters that the infrared energy (heat energy) of a kind of effectively filtering wavelength below 3900 nanometers is provided for the deficiency that solves above-mentioned technology existence.

To achieve these goals; The 3900 nanometer infrared fileters that the utility model designed; Comprise that composition is the substrate of sapphire (Sapphire) and the first filming layer and second coatings that lays respectively at the substrate two sides, it is characterized in that said the first filming layer comprises the SiO layer that Ge layer that the thickness that from inside to outside is arranged in order is 128 nanometers, SiO layer that thickness is 264 nanometers, Ge layer that thickness is 201 nanometers, SiO layer that thickness is 475 nanometers, Ge layer that thickness is 161 nanometers, SiO layer that thickness is 370 nanometers, Ge layer that thickness is 169 nanometers, SiO layer that thickness is 458 nanometers, Ge layer that thickness is 185 nanometers, SiO layer that thickness is 427 nanometers, Ge layer that thickness is 156 nanometers, SiO layer that thickness is 416 nanometers, Ge layer that thickness is 179 nanometers, SiO layer that thickness is 461 nanometers, Ge layer that thickness is 176 nanometers, SiO layer that thickness is 392 nanometers, Ge layer that thickness is 144 nanometers, SiO layer that thickness is 460 nanometers, Ge layer that thickness is 200 nanometers, SiO layer that thickness is 392 nanometers, Ge layer that thickness is 46 nanometers and thickness are 200 nanometers; Said second coatings comprises the SiO layer that Ge layer that the thickness that from inside to outside is arranged in order is 58 nanometers, SiO layer that thickness is 357 nanometers, Ge layer that thickness is 177 nanometers, SiO layer that thickness is 230 nanometers, Ge layer that thickness is 143 nanometers, SiO layer that thickness is 341 nanometers, Ge layer that thickness is 72 nanometers, SiO layer that thickness is 359 nanometers, Ge layer that thickness is 148 nanometers, SiO layer that thickness is 201 nanometers, Ge layer that thickness is 181 nanometers and thickness are 715 nanometers.

The corresponding thickness of above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Usually the tolerance of thickness is about 10nm.

The 3900 nanometer long-pass infrared fileters that the utility model obtains, the design through above-mentioned has realized good stability; And can be applicable to the temperature sense and the measurement of object; This optical filter obtains half high some wavelength location, 3900 ± 1% nanometers, can realize the cut-off region transmitance less than 0.1%, and the transmitance that sees through the district can be greater than 90%; Improved signal to noise ratio (S/N ratio) greatly; When measurement that is used for object temperature and induction, can effectively improve resolution characteristic and accuracy of detection, better meet the request for utilization in the reality.

Description of drawings

Fig. 1 is the structural representation of embodiment 1;

Fig. 2 is embodiment infrared spectrum measured curve figure.

Among the figure: substrate 1, the first filming layer 11, second coatings 12.

Embodiment

Combine accompanying drawing that the utility model is done further to describe through embodiment below.

Embodiment 1:

As shown in Figure 1; The 3900 nanometer infrared fileters that present embodiment provides; Comprise that composition is the substrate 1 of sapphire (Sapphire); Be coated with the first filming layer 11 and second coatings 12 respectively in the two sides of substrate 1, said the first filming layer 11 comprises the SiO layer that Ge layer that the thickness that from inside to outside is arranged in order is 128 nanometers, SiO layer that thickness is 264 nanometers, Ge layer that thickness is 201 nanometers, SiO layer that thickness is 475 nanometers, Ge layer that thickness is 161 nanometers, SiO layer that thickness is 370 nanometers, Ge layer that thickness is 169 nanometers, SiO layer that thickness is 458 nanometers, Ge layer that thickness is 185 nanometers, SiO layer that thickness is 427 nanometers, Ge layer that thickness is 156 nanometers, SiO layer that thickness is 416 nanometers, Ge layer that thickness is 179 nanometers, SiO layer that thickness is 461 nanometers, Ge layer that thickness is 176 nanometers, SiO layer that thickness is 392 nanometers, Ge layer that thickness is 144 nanometers, SiO layer that thickness is 460 nanometers, Ge layer that thickness is 200 nanometers, SiO layer that thickness is 392 nanometers, Ge layer that thickness is 46 nanometers and thickness are 200 nanometers; Said second coatings 12 comprises the SiO layer that Ge layer that the thickness that from inside to outside is arranged in order is 58 nanometers, SiO layer that thickness is 357 nanometers, Ge layer that thickness is 177 nanometers, SiO layer that thickness is 230 nanometers, Ge layer that thickness is 143 nanometers, SiO layer that thickness is 341 nanometers, Ge layer that thickness is 72 nanometers, SiO layer that thickness is 359 nanometers, Ge layer that thickness is 148 nanometers, SiO layer that thickness is 201 nanometers, Ge layer that thickness is 181 nanometers and thickness are 715 nanometers.

Sapphire in above-mentioned (Sapphire), silicon monoxide (SiO) and germanium (Ge) material are the material that can directly buy in the existing market all, so seldom be described in detail at this.

The infrared spectrum measured curve figure of present embodiment is as shown in Figure 2.

The substrate 1 of sapphire in the present embodiment (Sapphire) material cooperates both side surface to replace compound Ge, SiO material film coating layer; Make the effectively infrared energy (heat energy) of filtering wavelength below 3900 nanometers of the invention; Cooperate infrared thermometer to use; Make the photodetector part of infrared thermometer only accept the infrared energy (heat energy) of wavelength more than 3900 nanometers, promote the test accuracy of infrared thermometer.

Claims

1. nanometer long-pass infrared fileter; Comprise that composition is sapphire substrate (1) and the first filming layer (11) that lays respectively at the substrate two sides and second coatings (12), it is characterized in that said the first filming layer (11) comprises the SiO layer that Ge layer that the thickness that from inside to outside is arranged in order is 128 nanometers, SiO layer that thickness is 264 nanometers, Ge layer that thickness is 201 nanometers, SiO layer that thickness is 475 nanometers, Ge layer that thickness is 161 nanometers, SiO layer that thickness is 370 nanometers, Ge layer that thickness is 169 nanometers, SiO layer that thickness is 458 nanometers, Ge layer that thickness is 185 nanometers, SiO layer that thickness is 427 nanometers, Ge layer that thickness is 156 nanometers, SiO layer that thickness is 416 nanometers, Ge layer that thickness is 179 nanometers, SiO layer that thickness is 461 nanometers, Ge layer that thickness is 176 nanometers, SiO layer that thickness is 392 nanometers, Ge layer that thickness is 144 nanometers, SiO layer that thickness is 460 nanometers, Ge layer that thickness is 200 nanometers, SiO layer that thickness is 392 nanometers, Ge layer that thickness is 46 nanometers and thickness are 200 nanometers; Said second coatings (12) comprises the SiO layer that Ge layer that the thickness that from inside to outside is arranged in order is 58 nanometers, SiO layer that thickness is 357 nanometers, Ge layer that thickness is 177 nanometers, SiO layer that thickness is 230 nanometers, Ge layer that thickness is 143 nanometers, SiO layer that thickness is 341 nanometers, Ge layer that thickness is 72 nanometers, SiO layer that thickness is 359 nanometers, Ge layer that thickness is 148 nanometers, SiO layer that thickness is 201 nanometers, Ge layer that thickness is 181 nanometers and thickness are 715 nanometers.