CN202275173U

CN202275173U - Infrared filter allowing transmission of 3650-nanometer long waves

Info

Publication number: CN202275173U
Application number: CN2012200909788U
Authority: CN
Inventors: 吕晶
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Mai peak Polytron Technologies Inc
Priority date: 2012-03-12
Filing date: 2012-03-12
Publication date: 2012-06-13
Anticipated expiration: 2022-03-12

Abstract

The utility model discloses an infrared filter allowing transmission of 3650-nanometer long waves, which comprises a substrate with silicon (Si) as raw materials, a first film coating formed by Ge layers and SiO layers and a second film coating formed by Ge layers and SiO layers, wherein the substrate is arranged between the first film coating and the second film coating. The infrared filter allowing the transmission of the 3650-nanometer long waves is characterized in that the first film coating and the second film coating are both formed by interactively arranged Ge layers and SiO layers which have different depths. By means of the design, the infrared filter allowing the transmission of the 3650-nanometer long waves is good in stability and suitable for temperature induction and measurement of objects, obtain half peak wavelength positioning of 3650+/-1% nanometers, and can achieve cut-off region transmissivity being lower than 0.1% and transmission region transmissivity being higher than 90%. When used for measuring and inducting the temperature of the objects, the infrared filter allowing the transmission of the 3650-nanometer long waves can effectively improve resolution capacity and detection accuracy and meet practical using requirements well.

Description

3650 nanometer long-pass infrared fileters

Technical field

The utility model relates to a kind of infrared fileter, particularly 3650 nanometer long-pass infrared fileters.

Background technology

Infrared fileter filters, allows to pass through infrared ray simultaneously by visible light.Ultrared wavelength penetrates any object at an easy rate, and just infrared ray can not reflect through object the time.Utilize ultrared this characteristic, only let long wavelength's infrared ray pass through, filtering short wavelength's ultraviolet ray and visible light.Be applied to a lot of fields, in the induction and measuring process for object temperature, select the suitable wavelengths scope most important at present.And the signal to noise ratio (S/N ratio) that existing long-pass infrared fileter in use exists characteristics, particularly transmitance such as thermometric instability, degree of accuracy are not high and cut-off region is not high, can not satisfy high-precision measurement requirement.

The utility model content

The purpose of the utility model is a kind of signal to noise ratio (S/N ratio) height, good stability are provided in order to solve the deficiency that above-mentioned technology exists, effectively improve 3650 nanometer long-pass infrared fileters of object temperature measurement resolution characteristic and accuracy of detection request for utilization.

To achieve these goals; The 3650 nanometer long-pass infrared fileters that the utility model designed; Comprise that with Si be raw-material substrate; Be the first filming layer and be second coatings with Ge, SiO with Ge, SiO; And said substrate is located between the first filming layer and second coatings, it is characterized in that said the first filming layer is arranged in order the SiO layer that includes 246nm thickness, the Ge layer of 148nm thickness, the SiO layer of 198nm thickness, the Ge layer of 182nm thickness, the SiO layer of 350nm thickness, the Ge layer of 141nm thickness, the SiO layer of 413nm thickness, the Ge layer of 158nm thickness, the SiO layer of 351nm thickness, the Ge layer of 169nm thickness, the SiO layer of 401nm thickness, the Ge layer of 144nm thickness, the SiO layer of 386nm thickness, the Ge layer of 177nm thickness, the SiO layer of 360nm thickness, the Ge layer of 140nm thickness, the SiO layer of 436nm thickness, the Ge layer of 174nm thickness and the SiO layer of 769nm thickness from inside to outside; Said second coatings is arranged in order the SiO layer that includes 250nm thickness, the Ge layer of 89nm thickness, the SiO layer of 140nm thickness, the Ge layer of 142nm thickness, the SiO layer of 165nm thickness, the Ge layer of 107nm thickness, the SiO layer of 272nm thickness, the Ge layer of 80nm thickness, the SiO layer of 299nm thickness, the Ge layer of 77nm thickness, the SiO layer of 191nm thickness, the Ge layer of 209nm thickness, the SiO layer of 117nm thickness, the Ge layer of 184nm thickness and the SiO layer of 685nm thickness from inside to outside.

The corresponding thickness of above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Usually the tolerance of thickness is about 10nm.

The 3650 nanometer long-pass infrared fileters that the utility model obtains, the design through above-mentioned has realized good stability; And can be applicable to the temperature sense and the measurement of object; This optical filter obtains half high some wavelength location, 3650 ± 1% nanometers, can realize the cut-off region transmitance less than 0.1%, and the transmitance that sees through the district can be greater than 90%; Improved signal to noise ratio (S/N ratio) greatly; When measurement that is used for object temperature and induction, can effectively improve resolution characteristic and accuracy of detection, better meet the request for utilization in the reality.

Description of drawings

Fig. 1 is the one-piece construction synoptic diagram of embodiment;

Fig. 2 is infrared spectrum measured curve figure.

Among the figure: the first filming layer 1, substrate 2, second coatings 3.

Embodiment

Combine accompanying drawing that the utility model is done further to describe through embodiment below.

Embodiment:

As shown in Figure 1; The 3650 nanometer long-pass infrared fileters that present embodiment provides; Comprise that with Si be raw-material substrate 2; Be the first filming layer 1 and be second coatings 3 with Ge, SiO with Ge, SiO; And said substrate 2 is located between the first filming layer 1 and second coatings 3, it is characterized in that said the first filming layer 1 is arranged in order the SiO layer that includes 246nm thickness, the Ge layer of 148nm thickness, the SiO layer of 198nm thickness, the Ge layer of 182nm thickness, the SiO layer of 350nm thickness, the Ge layer of 141nm thickness, the SiO layer of 413nm thickness, the Ge layer of 158nm thickness, the SiO layer of 351nm thickness, the Ge layer of 169nm thickness, the SiO layer of 401nm thickness, the Ge layer of 144nm thickness, the SiO layer of 386nm thickness, the Ge layer of 177nm thickness, the SiO layer of 360nm thickness, the Ge layer of 140nm thickness, the SiO layer of 436nm thickness, the Ge layer of 174nm thickness and the SiO layer of 769nm thickness from inside to outside; Said second coatings 3 is arranged in order the SiO layer that includes 250nm thickness, the Ge layer of 89nm thickness, the SiO layer of 140nm thickness, the Ge layer of 142nm thickness, the SiO layer of 165nm thickness, the Ge layer of 107nm thickness, the SiO layer of 272nm thickness, the Ge layer of 80nm thickness, the SiO layer of 299nm thickness, the Ge layer of 77nm thickness, the SiO layer of 191nm thickness, the Ge layer of 209nm thickness, the SiO layer of 117nm thickness, the Ge layer of 184nm thickness and the SiO layer of 685nm thickness from inside to outside.

The 3650 nanometer long-pass infrared fileters that present embodiment provides, its measured curve is as shown in Figure 2, can realize the cut-off region transmitance less than 0.1%, and the transmitance that sees through the district can be greater than 90%.

Claims

1. nanometer long-pass infrared fileter; Comprise that with Si be raw-material substrate (2); Be the first filming layer (1) and be second coatings (3) with Ge, SiO with Ge, SiO; And said substrate (2) is located between the first filming layer (1) and second coatings (3), it is characterized in that said the first filming layer (1) is arranged in order the SiO layer that includes 246nm thickness, the Ge layer of 148nm thickness, the SiO layer of 198nm thickness, the Ge layer of 182nm thickness, the SiO layer of 350nm thickness, the Ge layer of 141nm thickness, the SiO layer of 413nm thickness, the Ge layer of 158nm thickness, the SiO layer of 351nm thickness, the Ge layer of 169nm thickness, the SiO layer of 401nm thickness, the Ge layer of 144nm thickness, the SiO layer of 386nm thickness, the Ge layer of 177nm thickness, the SiO layer of 360nm thickness, the Ge layer of 140nm thickness, the SiO layer of 436nm thickness, the Ge layer of 174nm thickness and the SiO layer of 769nm thickness from inside to outside; Said second coatings (3) is arranged in order the SiO layer that includes 250nm thickness, the Ge layer of 89nm thickness, the SiO layer of 140nm thickness, the Ge layer of 142nm thickness, the SiO layer of 165nm thickness, the Ge layer of 107nm thickness, the SiO layer of 272nm thickness, the Ge layer of 80nm thickness, the SiO layer of 299nm thickness, the Ge layer of 77nm thickness, the SiO layer of 191nm thickness, the Ge layer of 209nm thickness, the SiO layer of 117nm thickness, the Ge layer of 184nm thickness and the SiO layer of 685nm thickness from inside to outside.