CN103808691A - Asymmetric Au particle array and FPcavity coupled refractive index sensor - Google Patents
Asymmetric Au particle array and FPcavity coupled refractive index sensor Download PDFInfo
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- CN103808691A CN103808691A CN201410056974.1A CN201410056974A CN103808691A CN 103808691 A CN103808691 A CN 103808691A CN 201410056974 A CN201410056974 A CN 201410056974A CN 103808691 A CN103808691 A CN 103808691A
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Abstract
The invention provides an asymmetric Au particle array and FP cavity coupled refractive index sensor which comprises an insulation substrate, a metal film reflection layer, a transparent medium layer and a two-dimensional metal unit array, wherein at least one surface of the insulation substrate is polished; the metal film reflection layer is deposited on a polishing surface of the substrate; the transparent medium layer is deposited on the metal film reflection layer; the two-dimensional metal unit array is formed on the transparent medium layer, each metal unit in the two-dimensional metal unit array is an asymmetric unit, and is composed of two metal nano columns arranged along the surface of the substrate, and an F-P cavity loop is formed between the two metal nano columns of each metal unit and the metal film reflection layer just below the two metal nano columns. According to the asymmetric Au particle array and FP cavity coupled refractive index sensor, by combining an asymmetric Fano resonance effect and coupling an LSP mode and an FP cavity mode, the full width at half maximum of a resonance valley of the sensor can be reduced, and thus the performance of a local area surface plasma sensor is improved.
Description
Technical field
The present invention relates to integrated opto-electronic technical field, be specifically related to the index sensor of a kind of asymmetric Au array of particles and the coupling of FP chamber.
Background technology
In recent years, the research relevant with surface phasmon (surface plasmon) has obtained numerous progress, and it rapidly and other field intersect and permeate.Along with the fast development of biological, chemistry, medical science, bio-sensing is in Molecular Detection, medical diagnosis on disease, and there is more and more important application the aspects such as food security and environment measuring.In bio-sensing field, because surface plasmons is very sensitive to the variations in refractive index of medium, therefore the sensor based on surface plasmons more and more comes into one's own.
The sensor relevant with surface plasmons mainly contains two classes, and a class is the sensor based on surface plasmon polariton (SPP), and another kind of is sensor based on local surface plasma resonance (LSPR).They rely on the variation of the resonant wavelength that the variation that detects surrounding environment refractive index causes to realize detection.
For the sensor based on surface plasmon polariton, its sensitivity is very high, and the bottleneck of development is exactly that it needs other condition to be coupled, realize phase compensation, as prism-coupled, grating coupling, thereby cause the device of sensor relatively heavy, very high to requirement for environmental conditions.
For the sensor based on local surface plasma resonance, because the resonant frequency of local surface plasma and the shape of metallic particles, size have substantial connection, do not need phase compensation, and local surface plasma local is a very little scope, can realize unimolecule and measure.It can realize the miniaturization of device, can integrate with the microfluid of current trend.But, low two orders of magnitude of remolding sensitivity first kind sensor of Equations of The Second Kind sensor.Be difficult to significantly promote on the basis that its sensing is sensitive in simple shape and the size that changes single particle, how improved its sensing ability and become those skilled in the art's technical matters urgently to be resolved hurrily.
Summary of the invention
(1) technical matters that will solve
In view of above-mentioned technical matters, the invention provides the index sensor of a kind of asymmetric Au array of particles and the coupling of FP chamber.
(2) technical scheme
The invention provides the index sensor of a kind of asymmetric Au array of particles and the coupling of FP chamber.This index sensor comprises: dielectric substrate, and it is single-sided polishing at least; Metallic film reflection horizon, is deposited on the polished surface of substrate; Transparent dielectric layer, on depositing metal films reflection horizon; And two-dimensional metallic cell array, be formed on transparent dielectric layer, each metal unit in this two-dimensional metallic cell array is asymmetric unit, it is to be made up of two metal nano posts of arranging along substrate surface, between two metal nano posts of each metal unit and the metallic film reflection horizon under it, forms a loop, F-P chamber; Wherein, this loop, F-P chamber comprises: part, light that the upper surface along continuous straight runs in light metallic film reflection horizon below this metal unit is propagated are vertically propagated back and forth the part that the upper surface along continuous straight runs of two parts, the transparent dielectric layer of light below these metal unit two metal cube rods is propagated altogether in transparent dielectric layer, and the part propagated of the upper surface along continuous straight runs of the transparent dielectric layer of light below between these metal unit two metal cube rods.
(3) beneficial effect
Can find out from technique scheme, the index sensor of asymmetric Au array of particles of the present invention and the coupling of FP chamber has following beneficial effect:
(1) combine asymmetric particle Fano resonance effects and LSP pattern and FP chamber mould are coupled, can reduce the halfwidth of sensor resonance paddy, thereby promote the quality factor (FOM) of index sensor, and then promoted local surface plasma sensor performance;
(2) structure of this index sensor can be made micro-nano device, realizes miniaturization, can with microfluid combination, can realize on sheet integrated.
Accompanying drawing explanation
Fig. 1 is the 3 dimensional drawing of the index sensor of the asymmetric Au array of particles of the embodiment of the present invention and the coupling of FP chamber;
Fig. 2 is that index sensor shown in Fig. 1 is along the sectional view of X-Z face;
Fig. 3 is the schematic diagram of metal unit in index sensor shown in Fig. 1.
[main element symbol description of the present invention]
1-substrate; 2-metallic film reflection horizon;
3-high refractive index medium layer; The asymmetrical Au cube rod of 4-array of particles.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.It should be noted that, in accompanying drawing or instructions description, similar or identical part is all used identical figure number.The implementation that does not illustrate in accompanying drawing or describe is form known to a person of ordinary skill in the art in affiliated technical field.In addition, although the demonstration of the parameter that comprises particular value can be provided herein, should be appreciated that, parameter is without definitely equaling corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value.
The invention provides the index sensor of a kind of asymmetric Au array of particles and the coupling of FP chamber.This index sensor intercouples local surface plasma (LSP) pattern of asymmetrical Au array of particles and FP chamber pattern, thereby reduce the halfwidth of sensor resonance paddy, improve its quality factor, finally promote the sensing characteristics of index sensor.
In one exemplary embodiment of the present invention, provide the index sensor of a kind of asymmetric Au array of particles and the coupling of FP chamber.Fig. 1 is the 3 dimensional drawing of the index sensor of the asymmetric Au array of particles of the embodiment of the present invention and the coupling of FP chamber.Please refer to Fig. 1, the index sensor of the asymmetric Au array of particles of the present embodiment and the coupling of FP chamber comprises: substrate 1, and it is single-sided polishing at least; Metallic film reflection horizon 2, is deposited on the polished surface of substrate 1; Transparent dielectric layer 3, on depositing metal films reflection horizon 2; Two-dimensional metallic cell array 4, be formed on transparent dielectric layer 3, each metal unit in this two-dimensional metallic cell array is asymmetric unit, it is to be made up of two metal cube rods of arranging along substrate surface directions X, and each unit forms loop, a F-P chamber with the metallic film reflection horizon being positioned under it.
Fig. 2 is that index sensor shown in Fig. 1 is along the sectional view of X-Z face.Please refer to Fig. 2, this loop, F-P chamber comprises: part, the light that the upper surface along continuous straight runs in light metallic film reflection horizon 2 below this metal unit is propagated in transparent dielectric layer 3, vertically propagate back and forth two parts altogether, light with these metal unit two metal cube rods below the part propagated of the upper surface along continuous straight runs of transparent dielectric layer 3, and the part propagated of the upper surface along continuous straight runs of the transparent dielectric layer 3 of light below between these metal unit two metal cube rods.
Below each ingredient of the index sensor to the asymmetric Au array of particles of the present embodiment and the coupling of FP chamber is elaborated respectively.
The material in metallic film reflection horizon 2 should be selected the material of high reflectance, for example: the precious metal materials such as gold, silver, platinum, its thickness should meet and is more than or equal to 100nm.
The material of transparent dielectric layer 3 is ZrO
2, TiO
2etc. the material of high index of refraction, ranges of indices of refraction is 2.1 to 2.4, and the thickness of transparent dielectric layer is between between 200nm to 600nm.
Definition is Z direction perpendicular to the direction of substrate 1, and the direction that is parallel to substrate is X/Y direction.Fig. 2 is the sectional view of the X-Z face on the index sensor edge of the asymmetric Au array of particles of the embodiment of the present invention and the coupling of FP chamber.
Please refer to Fig. 1 and Fig. 2, for asymmetrical two-dimensional metallic cell array 4, array is arranged along XY direction.The cycle of two-dimensional metallic cell array between 500nm between 700nm.Preferably, the cycle of this two-dimensional metallic cell array is 600nm.
Fig. 3 is the schematic diagram of metal unit in index sensor shown in Fig. 1.With reference to Fig. 3, the part in black box is a metal unit, and each unit is made up of two Au cube rods along directions X.The length of side of each Au cube rod is 140nm, the spacing of two Au cube rods be 50nm to 100nm, the height of Gionee square column is 100nm.Like this in the time of TM irradiation, between two Au nano cubic posts of each unit, there is the LSP pattern of strong coupling to exist, simultaneously because Au array of particles is in the asymmetry of directions X and Y-direction, there will be Fano resonance effect, reflection spectral line can splitting be two transmission paddy, they are respectively destructive interference and constructive interference, and the live width of final each reflection paddy narrows relatively.
With reference to Fig. 2, asymmetrical Au particle forms a FP chamber with the metallic film reflection horizon 2 that is positioned at its below.For this FP chamber, as long as the phase place in loop can meet the integral multiple of 2 π, just there will be interference to disappear mutually.
Adopt the upper surface of the light vertical irradiation structure of TM pattern, can detect its reflection spectral line from the top of structure, due to
have direct correlation with local surface plasma, FP chamber mould and surface plasmon polaritons are coupled, and cause the live width of the reflection spectral line of total further to reduce.By FOM=S/FWHM, the wherein sensitivity of S sensor, the halfwidth that FWHM is spectral line.Reducing on the basis of line width, we can improve the FOM value of sensor, promote its sensing capabilities.In this structure, because whole loop forms a FP chamber, can see in the time that FP chamber meets resonance having:
Wherein,
circulation total position phase translation in a week,
for light is vertically propagated up or down the position phase translation producing in transparent dielectric layer 3,
for the upper surface along continuous straight runs in light metallic film reflection horizon below this metal unit is propagated the position phase translation producing,
propagate for the upper surface along continuous straight runs of the transparent dielectric layer of light below these metal unit two metal cube rods the position phase shift producing, this phase shift is directly related with the surface plasmons of metallic particles, wherein:
Wherein, β is the loss constant that forms the metal material of metal cube rod, and ω is incident light frequency, ω
plthe resonant frequency of the local surface plasma that the metal unit that measures of serving as reasons produces.
for the upper surface along continuous straight runs of the transparent dielectric layer of light below between these metal unit two metal cube rods is propagated the position phase translation producing.
We wish to have between two of each unit Au nano cubic post the LSP pattern of strong coupling to exist, while is due to the asymmetry of Au array of particles, there will be Fano resonance effect, produce a phase long pattern and the pattern that disappears mutually, they can make the live width of the LSP pattern of particle narrow.On this basis, due to each array element and Au film and dielectric layer below, can form the loop in a FP chamber.
Because x direction and the y direction of each unit are not symmetrical, in the time of TM irradiation, just there will be Fano effect like this, reflection spectral line can splitting be two transmission paddy, and they are respectively destructive interference and constructive interference, and the live width of final each reflection paddy narrows relatively.Dielectric layer adopts the very material of high index of refraction, and the scope of refractive index is 2.1 to 2.4.
So far, by reference to the accompanying drawings the index sensor of the asymmetric Au array of particles of the present embodiment and the coupling of FP chamber be have been described in detail.Describe according to above, those skilled in the art should have clearly understanding to the index sensor of the asymmetric Au array of particles of the present invention and the coupling of FP chamber.
In addition, the above-mentioned definition to each element is not limited in various concrete structures or the shape in embodiment, mentioned, and those of ordinary skill in the art can know simply and replace it, for example:
(1) the Au array of particles of asymmetrical cube rod can also change the Au array of particles of asymmetrical cylinder into;
(2) metallic film reflection horizon Au can replace with Ag;
(3) nano-pillar in metal unit can also be other materials, for example: Ag, Pt etc.
In sum, the present invention is by controlling the cycle P of asymmetric nanometer Au cube rod particle
xand P
ycan regulate and control the position of resonant wavelength, and the phase slake live width of long two kinds of patterns mutually, thereby obtain having the very index sensor based on local surface plasma of high-quality-factor.This index sensor, can be for food security, biomedicine, and environment measuring etc. numerous areas, is with a wide range of applications.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. an index sensor for asymmetric Au array of particles and the coupling of FP chamber, is characterized in that, comprising:
Dielectric substrate, it is single-sided polishing at least;
Metallic film reflection horizon, is deposited on the polished surface of described substrate;
Transparent dielectric layer, deposits on described metallic film reflection horizon; And
Two-dimensional metallic cell array, be formed on described transparent dielectric layer, each metal unit in this two-dimensional metallic cell array is asymmetric unit, it is to be made up of two metal nano posts of arranging along substrate surface, between two metal nano posts of each metal unit and the metallic film reflection horizon under it, forms a loop, F-P chamber;
Wherein, this loop, F-P chamber comprises: part, light that the upper surface along continuous straight runs in light metallic film reflection horizon below this metal unit is propagated are vertically propagated back and forth the part that the upper surface along continuous straight runs of two parts, the transparent dielectric layer of light below these metal unit two metal cube rods is propagated altogether in transparent dielectric layer, and the part propagated of the upper surface along continuous straight runs of the transparent dielectric layer of light below between these metal unit two metal cube rods.
2. index sensor according to claim 1, is characterized in that, loop, described F-P chamber meets:
Wherein,
total the phase translation in loop, described F-P chamber,
for vertically propagate up or down the position phase translation producing in transparent dielectric layer,
for the upper surface along continuous straight runs in light metallic film reflection horizon below this metal unit is propagated the position phase translation producing,
propagate for the upper surface along continuous straight runs of the transparent dielectric layer of light below these metal unit two metal cube rods the position phase translation producing, the surface plasmons of this phase translation and metallic particles is directly related,
propagate for the upper surface along continuous straight runs of the transparent dielectric layer of light below between these metal unit two metal cube rods the position phase translation producing, n is positive integer.
3. index sensor according to claim 2, is characterized in that:
Wherein, β is the loss constant that forms the metal material of metal cube rod, and ω is incident light frequency, ω
plthe resonant frequency of the local surface plasma that the metal unit that measures of serving as reasons produces.
4. index sensor according to claim 1, is characterized in that, the cycle of described two-dimensional metallic cell array between 500nm between 700nm.
5. index sensor according to claim 1, is characterized in that, the cycle of described two-dimensional metallic cell array is 600nm.
6. index sensor according to claim 1, is characterized in that, described metal nano post be shaped as cylinder or cube rod, its material be following material one of them: Au, Ag or Pt.
7. index sensor according to claim 6, is characterized in that, described metal nano post is Gionee square column, and its length of side is 140nm, is highly 100nm, and in metal unit, the spacing of two Gionee square columns arrives 100nm between 50nm.
8. according to the transparent dielectric layer described in any one in claim 1 to 7, it is characterized in that, the material of described transparent dielectric layer be following material one of them: ZrO
2and TiO
2, its thickness is between between 200nm to 600nm.
9. according to the index sensor described in any one in claim 1 to 7, it is characterized in that, the material of described dielectric substrate be following material one of them: SiO
2, Al
2o
3with K9 glass.
10. according to the index sensor described in any one in claim 1 to 7, it is characterized in that, the material in described metallic film reflection horizon be following material one of them: gold, silver and platinum, its thickness is more than or equal to 100nm.
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| CN104061997A (en) * | 2014-06-26 | 2014-09-24 | 天津大学 | Sensor based on gold nanorod dimer array Fano resonance characteristics |
| CN104634437A (en) * | 2015-01-27 | 2015-05-20 | 天津理工大学 | Dual-Fano resonant feature array for symmetrical nano-rod tripolymer and sensing application thereof |
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| CN105758821A (en) * | 2016-03-01 | 2016-07-13 | 中国科学院西安光学精密机械研究所 | High-sensitivity metamaterial nano sensing system with ultra-narrow linewidth spectral response |
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Application publication date: 20140521 |