CN107976733A - A kind of all dielectric polarizes unrelated angular filter - Google Patents
A kind of all dielectric polarizes unrelated angular filter Download PDFInfo
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- CN107976733A CN107976733A CN201711200014.8A CN201711200014A CN107976733A CN 107976733 A CN107976733 A CN 107976733A CN 201711200014 A CN201711200014 A CN 201711200014A CN 107976733 A CN107976733 A CN 107976733A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 239000004038 photonic crystal Substances 0.000 claims abstract description 12
- 230000010287 polarization Effects 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 238000001914 filtration Methods 0.000 abstract description 13
- 238000002474 experimental method Methods 0.000 abstract description 9
- 238000013461 design Methods 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 238000004891 communication Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000000411 transmission spectrum Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000000255 optical extinction spectrum Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical group [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Polarising Elements (AREA)
Abstract
The present invention is proposed with one-dimensional to what is formed by the silicon/silicon dioxide of semiconductor compatibility（1D）Photonic crystal（PC）All dielectric polarize unrelated angular filter.Utilize the energy band distribution of p and s polarized component near symmetricals and Fabry Perot（F‑P）Resonance, realizes for the unrelated angle filtering of the efficiently polarization of normal incidence.In large area（5cm×5cm）Scope pursues the Ph.D design using vacuum magnetic-control sputtering and experiment is prepared for angular filter.Experiment measurement shows that wavelength is only 2.2 ° for the angle of divergence for polarizing unrelated transmitted light beam that the angle at 1550 nm places filters sample, and transmissivity during normal incidence is up to 0.8.The angular filter proposed propose by simple structure and it is easily fabricated in a manner of come the effective ways that design and realize the full dielectric of semiconductor compatibility and polarize unrelated angle wave filter, it has extensive potential application in terms of illumination, optical beam steering, optical coupling and optic communication.
Description
Technical field
The present invention relates to optical technical field, more particularly to a kind of all dielectric to polarize unrelated angular filter.
Background technology
Complete manipulation to light is always the important topic of optical field.Electromagnetic wave can pass through its phase, amplitude, frequency
Rate, polarizes with the direction of propagation to characterize.There is substantial amounts of work to be published to manipulate amplitude, position phase, frequency and polarization.Direction
Wave filter (or angular filter) is also widely studied, and is still an important issue problem even to this day.Zero refractive material
(ZIM) it has been studied for angle filtering.Due to the wave vector matching between ZIM and adjacent material, preferable ZIM can be to all non-
Normal incidence ripple is filtered.The dielectric constant of nearly zero material (ENZ) of dielectric constant causes refractive index also close to zero close to zero, because
This is commonly used in realizing ZIM.Nano wire and multi-layer metamaterial made of plasma metal are that most common two kinds of ENZ materials are set
Meter.Alekseyev et al. proposes the silver nano line array grown in anodic alumina films, to realize the p at 600nm wavelength
The incident angle wave filter of (electric field oscillation direction is in the plane of incidence) is polarized, optical filtering angle is 20 °, but due to impedance mismatching and is waited
The metal loss of gas ions excimer causes transmitance very low (only 0.12).It is also to be noted that ENZ can be only operated in
One of p or s polarized incidents (electric field oscillation direction perpendicular to enter plane), which greatly limits its application.
The angular filter of specific polarization light can be also used as with the photonic crystal (PC) of (DLCD) by being bored with dirac,
Because the PC with DLCD can be approximated to be double zero materials (DZM), i.e. dielectric constant and magnetic conductivity is same in the frequency of dirac point
When close to zero.2013, Moitra et al. reported the DZM being made of the rod of 10 alternate silicon/silicon dioxide layers.DZM exists
Good highly transmissive angle filtering property is shown in 30 ° of incidence angle.However, DZM can also be only used for the incidence of TM polarised lights, and
And it should be difficult with the multilayer silicon/silicon dioxide rod of 3 μm/0.26 μm of high-aspect-ratio (height width) to prepare, particularly big
When prepared by area.2014, Shen et al. proposed the 1DPC with different cycles to transmit the plane wave of specific incidence angle
(Brewster angle), and reflect the incidence wave of other incidence angles.But this angular filter must be submerged in specific magnetic
In conductance and the particular liquid of dielectric constant, to improve efficiency.It is also noted that the angular filter is only used for Bu Lu
The oblique incidence of this special angle (different from traditional normal incidence), and it is identical with other angles wave filter, it is only applicable to p-polarization and enters
Penetrate.
Since under non-normal incidence, s and p-polarization incidence wave show significant difference, polarize unrelated angular filter still
So it is not implemented.
In view of the above shortcomings, the designer, is actively subject to research and innovation, it is unrelated to found a kind of all dielectric polarization
Angular filter, make it with more the utility value in industry.
The content of the invention
, can be to realize normal incidence it is an object of the invention to propose that a kind of all dielectric polarizes unrelated angular filter
Angle filtering, and with polarizing unrelated effective angle filtering characteristic.
For this purpose, the present invention uses following technical scheme：
A kind of all dielectric polarizes unrelated angular filter, it is characterised in that including substrate, stacks on the substrate
The optical coatings of two kinds of differing dielectric constants, the material of optical coatings described in one of which are full Jie compatible with semiconductor
Matter photonic crystal, the material of another optical coatings are the unrelated photonic crystal of polarization.
Further, two kinds of optical coatings press alternation method periodic stacks on the substrate.
Further, two kinds of optical coatings are respectively silicon layer and silicon dioxide layer.
Further, the substrate is silica, and the optical coatings stacked on the substrate are the silicon layer.
Further, the thickness L of the silicon layer1=80 ± 8nm, the thickness L of the silicon dioxide layer2=454 ± 32nm.
Further, the silicon layer and the silicon dioxide layer alternating deposit by way of the sputter coating of vacuum ionic source
On the substrate.
Beneficial effects of the present invention are：The unrelated angular filter of the polarization (PIAF) is attached in band edge using p and s polarized components
The band structure of near near symmetrical, to realize that the angle of normal incidence filters.By designing the frequency of band edge, can obtain except ky
Whole reflections (that is, normal incidence is unique angle that incident light can be propagated) of light outside=0 point, and the angle filters
Device ensures light high-transmission rate by optimizing the resonance of the Fabry-Perot (F-P) in 1D structures.Test result indicates that designing
In the case that wavelength is 1550nm, the transmissivity of normal incidence is up to 0.80, and the angle of divergence of transmitted light beam is only 2.2 °, and with inclined
The effective angle filtering characteristic for shaking unrelated.
Brief description of the drawings
Fig. 1 is that the PIAF structure charts that the specific embodiment of the invention provides and experiment measure, and figure (a) shows that proposed 1D is complete
The schematic diagram of medium PIAF, figure (b) they are the electromicroscopic photographs of the PIAF made, wherein, light color is silicon (Si) layer, dark color is titanium dioxide
Silicon (SiO2) layer, figure (c) is experiment measuring light path diagram, and figure (d) is that the incidence angle when wavelength of measurement is 1550nm is 0 ° to 80 °
Transmitance；
Fig. 2 is the angle diverging measurement of PIAF, and Fig. 2 (a) is light path schematic diagram, and Fig. 2 (b)-(g) is in distance PIAF samples
Six photos shot at different distance, from 20 to 41 millimeters, and corresponding Gaussian fitting result, Fig. 2 (h) are r in difference
The linear fit of position；
Fig. 3 is Theoretical Design and the analysis of PIAF, and Fig. 3 (a) is the band structure of p and s polarized waves, and black oblique line represents light
Axis, black level solid line represent the wavelength of 1550nm, and black level dotted line represents kyBand edge frequencies (ω=0.33 (2 π when=0
C/a), i.e. the wavelength of 1618nm), Fig. 3 (b) is the electric field distribution when point light source is placed under PIAF；, Fig. 3 (c) is when a light
Source is placed on SiO2Electric field distribution when lower, external agency are arranged to air, wavelength 1550nm；
Fig. 4 is the Optical transmission spectrum of PIAF, and Fig. 4 (a) is the transmitted spectrum for having under normal incidence varying number unit,
Fig. 4 (b) is that have different Si and SiO in each unit2The transmitted spectrum of thickness, unit number are fixed as 10, each unit it is total
Thickness is fixed as L1+L2=534nm；
Fig. 5 is that the simulation of PIAF and experiment optical transmission spectra compare, optical transmission spectra when Fig. 5 (a) is normal incidence, Fig. 5
(b) incident angles that optical transmission spectra does not wait at 1550nm from 0 ° to 30 °, the number of plies 10.
Embodiment
Further illustrate technical scheme below with reference to the accompanying drawings and specific embodiments.
All dielectric proposed by the present invention polarizes unrelated angular filter (PIAF), including substrate, by the alternation method cycle
Property be stacked on the optical coatings of two kinds of differing dielectric constants in substrate, the material of one of which optical coatings is with partly leading
The all dielectric photonic crystal of body compatibility, the material of another optical coatings are the unrelated photonic crystal of polarization.Specifically, substrate
For silica, two kinds of optical coatings are respectively silicon layer and silicon dioxide layer, and are stacked on the optical coatings in substrate and are
Silicon layer.
The all dielectric of semiconductor compatibility is proved below by way of experiment and polarizes unrelated 1-D photon crystal, it is possible to achieve just
Incident angle filtering.
Fig. 1 illustrates the working performance of 1D PIAF at a wavelength of 1550 run.Each unit is respectively by L1=80nm and L2
The silicon (Si) and silica (SiO of=454nm2) layer composition.As shown in Fig. 1 (a), electromagnetic wave is from substrate (SiO2) direction incidence.
By vacuum ionic source sputter coating by Si and SiO2SiO of the layer alternating deposit in 5cm × 5cm2On substrate.Fig. 1 (b) is illustrated
The electromicroscopic photograph of 1D all dielectrics PIAF.Use near infrared laser (Agilent Technologies, 81960A, wavelength tune
Adjusting range is from 1503nm to 1632nm) and detector (Thorlabs, PAX5710IR1-T) detect its transmitance (Fig. 1 (c)).
Polarizer and half-wave plate are used to adjust polarization direction.As shown in Fig. 1 (c), when PIAF is tilted at different angles, measurement is incident
Light beam is in the transmissivity that design wavelength is 1550nm.Fig. 1 (d) illustrates the angle filtering performance of the PIAF, it can be seen that transmission
Rate is 0.8 in normal incidence, and 0.17 is quickly fallen to when incidence angle increases respectively to 2 °, saturating when incidence angle increases to 5 °
Cross rate and be then reduced to zero.It can also be seen that the PIAF shows identical angle filtering performance for p and s polarised light incidences, this is clear
Indicate to Chu it and polarize unrelated working performance.
In order to further prove its angle filter effect, using the experimental provision measurement shown in Fig. 2 (a) through the saturating of PIAF
Penetrate the angle of divergence of the laser beam of light.Laser is expanded with micro objective (20 ×) first, then passes through PIAF again.Pass through
Thermal camera (XENICS, XEVA-1.7-320,320 × 256 pixel) record is through the light at the diverse location of PIAF light beams
By force.Fig. 2 (b) is illustrated through the photo of PIAF and accordingly by the surface of intensity distribution of MATLAB fittings.It is observed that
PIAF has light beam good angle filtering performance.These light distribution are carried out with three-dimensional fitting, diverse location can be obtained
Transmitted light beam size qualitative assessment：
Wherein I is intensity (gray value in photo), and x and y represent the coordinate of the luminous point in photo.A, B, C and D are fittings
Parameter, wherein A are the gray value maximums in all pixels, B and D be respectively the row of the sum of gray value maximum x coordinate and
The y-coordinate of the row of the sum of gray value maximum.Fig. 2 (b)-(g) is that the distance of distance PIAF is the experiment light beam spot of 20mm to 41mm
Fitted Gaussian distribution, step-length is 1mm (show only six of which).Fig. 2 (h) gives the fitting light beam ruler at diverse location
Very little r (is defined as the pipper of maximum intensity and intensity drops to the 1/e of central light strength2Between distance).In Fig. 2 (h)
Line slope represent transmitted light beam the angle of divergence.Fig. 2 (h) employs linear fit, and obtains following relation：R=0.0379d
+ 5.6240 wherein d are the distances from PIAF to CCD camera (shown in such as Fig. 2 (a)).The angle of divergence of transmitted light beam can calculate
For 2.2 ° of θ=arctan0.0379 ≈, this with before this result is that consistent (Fig. 1 (d)).
The Theoretical Design of PIAF and analysis can be based on by Si and SiO2The unit that layer is formed carries out, its thickness is respectively L1
=0.15a and L2=0.85a, wherein a are lattice constant (a=534nm).Incident electromagnetic waveCan be p
Polarized wave or s polarized waves.For s polarized waves, for electric field perpendicular to x-y plane, p-polarization ripple is then that magnetic direction is put down perpendicular to x-y
Face, as shown in Fig. 3 (a)).Shown in the band structure of p and s polarized waves such as Fig. 3 (a).Light gray and dark grey area represent p and s respectively
The spread state of polarized wave incidence.White area represents the region of directional photonic band-gap.These states in band gap can uniformly be situated between
Propagate in matter, but can decay in PIAF.Black oblique line represents optical axis.More than optical axis, the incidence wave from substrate can be
Free propagation in PIAF.Below optical axis, there is the evanescent wave that can not be propagated over long distances.It should be noted that in first band gap
It is middle there are an omnirange reflector space, it is defined on can be between band band edge and optical axis.(black level is empty for band edge in Fig. 3 (a)
Line, band edge frequencies ω=0.33 (2 π c/a), wavelength 1618nm) top and close to band edge frequency (i.e. black level solid line,
Corresponding to wavelength 1550nm) on, the eigenstate in PIAF is distributed in kyNear=0, this shows that the light wave close to normal incidence can be with
Pass through PIAF samples.For ky≠ 0, it will be reduced rapidly since there are directional photonic band-gap, transmitance.Therefore, such 1DPC structures
It can be applied to realize that angle filters, i.e. only normal incidence ripple could be by PC structural transmissions, and every other incidence wave will be by
Reflected in there are directional photonic band-gap.It is also noted that the energy band diagram of the p and s polarized waves above optical axis in Fig. 3 (a) is several
It is symmetrical, the unrelated angle filtering property of polarization of its this PIAF to be proposed provides physical theory foundation.Pass through PIAF's
Angle filter effect can also from the numerical simulation shown in Fig. 3 (b) intuitively from.In Fig. 3 (b), point light source is placed on
The underface of PIAF.As can be seen that as was expected, PIAF structures have effective filtered out big kyWave component, and closely just entering
The electromagnetic wave penetrated can pass through PIAF with the small angle of divergence.On the contrary, when PIAF is by pure SiO2Instead of when (Fig. 3 (c)), can see
Go out, the transmitted wave of point light source is propagated (spherical wave) along all directions.
However, the transmitance under the normal incidence for passing through PIAF be typically due to the impedance mismatching of 1DPC structures and surrounding medium and
It is very low.In order to improve energy efficiency, the highly transmissive and sharp resonance in transmitted spectrum can be realized using F-P effects
Peak.F-P formants can utilize the zoom feature of Maxwell equation to be designed.If the linear ruler of the structure in given PC
Very little equably to have scaled a factor-alpha, then frequencies omega and wave vector k should also be zoomed in and out according to relation, meet relation ω '=
ω/α and k'=k/ α.During (8~12 layers) of the transmitted spectrum of PIAF structures with the several units of different layers is drawn in fig. 4 (a).
Simulated using finite difference time domain (Lumerical FDTD Solutions, Canada).In simulations, using L1=
80nm and L2=454nm.From Fig. 4 (a) as can be seen that F-P formants change with the change of the number of plies.The only peak value of rightmost
It can be used for designing angle wave filter, because it is closest to band edge.As shown in Fig. 4 (a), this behavior can be used for adjusting operating wave
It is long, L can be used1=80nm and L2=454 10 layers of PIAF structures obtain the operation wavelength nanometer of 1550nm (dark vertical line).
The peak value of rightmost can adjust in the range of 1535nm to 1558nm and (use the dashed circle in Fig. 4 (a) to represent).
By varying the Si and SiO in each unit2(L1And L2) thickness, F-P resonance peaks can also be in broader model
It is adjusted in enclosing, because changing L1And L2When band edge frequencies change (on the contrary, band edge frequencies are constant when changing the number of plies),
Wherein L1And L2(fixed a=L1+L2=534nm) change will cause dielectric constant be distributed change.When the dielectric constant of unit
Changed to from ε (r)When, eigenfrequency will be changed according to formula from ωnkArrive
Wherein Enk(r) field distribution of non-perturbation mode is represented.Under the guidance of formula (2), we can adjust the thickness of silicon
(gross thickness of silicon and silica is fixed), to adjust eigenfrequency (operation wavelength).Fig. 4 (b) is shown with 10 layers
The adjustment capability of the transmitance peak value of normal incidence ripple near the 1550nm of PIAF structures.As silicon (L1) layer thickness from 60nm become
When changing to 100nm, closest to the peak of belt edge wavelength can from 1530nm be tuned to 1575nm (broken circle is used in Fig. 4 (b)
Circle represents), and can be in L1=80nm (vertical line of Fig. 4 (b)) place obtains the peak value of wavelength 1550nm.It should be noted that can
To use Si and SiO2The various combination of thickness and the quantity of unit cells obtain the similar performance of PIAF.
It has been presented in Fig. 5 PIAF (L1=80 ± 8nm and L2=454 ± 32nm) and theory (L1=80nm and L2=
454nm) the detailed of the performance between result is compared.Fig. 5 (a) and Fig. 5 (b) respectively illustrate at wavelength 1550nm normal incidence and 0 °
To the experiment of 30 ° of different incidence angles and the comparison of simulated transmission rate.As can be seen that experimental result is coincide well with theoretical modeling,
But it (is 0.80 in experiment, 0.92) normal incidence is modeled as that transmitance is smaller.These deviations are probably due to the mistake in preparation
Difference, such as every layer of thickness, this may weaken F-P resonance.The optical transmission spectra of p and s polarized incident waves almost overlaps, this is fabulous
Ground demonstrates the unrelated angle filtering property of polarization of manufactured PIAF.
Above in association with the specific embodiment technical principle that the invention has been described.These descriptions are intended merely to explain the present invention's
Principle, and limiting the scope of the invention cannot be construed in any way.Based on explanation herein, the technology of this area
Personnel would not require any inventive effort the other embodiments that can associate the present invention, these modes are fallen within
Within protection scope of the present invention.
Claims (6)
1. a kind of all dielectric polarizes unrelated angular filter, it is characterised in that including substrate, stack on the substrate two
The optical coatings of kind differing dielectric constant, the material of optical coatings described in one of which is all dielectric compatible with semiconductor
Photonic crystal, the material of another optical coatings are the unrelated photonic crystal of polarization.
2. all dielectric according to claim 1 polarizes unrelated angular filter, it is characterised in that two kinds of optics platings
Film layer presses alternation method periodic stacks on the substrate.
3. all dielectric according to claim 1 or 2 polarizes unrelated angular filter, it is characterised in that two kinds of light
It is respectively silicon layer and silicon dioxide layer to learn film plating layer.
4. all dielectric according to claim 3 polarizes unrelated angular filter, it is characterised in that the substrate is dioxy
SiClx, and the optical coatings stacked on the substrate are the silicon layer.
5. all dielectric according to claim 4 polarizes unrelated angular filter, it is characterised in that the thickness of the silicon layer
L1 =80 ± 8nm, the thickness L of the silicon dioxide layer2 = 454±32nm。
6. all dielectric according to claim 4 polarizes unrelated angular filter, it is characterised in that the silicon layer and described
Alternating deposit is on the substrate by way of the sputter coating of vacuum ionic source for silicon dioxide layer.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109031519A (en) * | 2018-07-28 | 2018-12-18 | 中国地质大学（北京） | A kind of narrow-band optical filter and all-optical diode |
| CN110880642A (en) * | 2019-11-29 | 2020-03-13 | 深圳先进技术研究院 | Near-zero refractive index metamaterial antenna |
| CN112433364A (en) * | 2020-11-16 | 2021-03-02 | 邵阳学院 | Filter design method based on transmission rate and high-pass filtering of electromagnetic hyperdielectric abnormality |
| EP3879314A4 (en) * | 2018-11-06 | 2022-04-20 | FUJIFILM Corporation | Imaging lens and imaging device |
| CN114660680A (en) * | 2022-03-22 | 2022-06-24 | 广东工业大学 | Photonic crystal structure design method with topological interface state |
| CN114902111A (en) * | 2019-09-11 | 2022-08-12 | 标致雪铁龙汽车股份有限公司 | Cover element for projection opening of head-up display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008143119A1 (en) * | 2007-05-18 | 2008-11-27 | Nec Corporation | Optical path switching element, optical path switching device, optical head device, and optical type information recording and reproducing device |
| CN101431109A (en) * | 2008-12-03 | 2009-05-13 | 中国科学技术大学 | One-dimensional silicon/silicon dioxide photon crystal filter |
| CN102066993A (en) * | 2008-05-19 | 2011-05-18 | 思锐材料公司 | Temperature activated optical films |
-
2017
- 2017-11-24 CN CN201711200014.8A patent/CN107976733B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008143119A1 (en) * | 2007-05-18 | 2008-11-27 | Nec Corporation | Optical path switching element, optical path switching device, optical head device, and optical type information recording and reproducing device |
| CN102066993A (en) * | 2008-05-19 | 2011-05-18 | 思锐材料公司 | Temperature activated optical films |
| CN101431109A (en) * | 2008-12-03 | 2009-05-13 | 中国科学技术大学 | One-dimensional silicon/silicon dioxide photon crystal filter |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109031519A (en) * | 2018-07-28 | 2018-12-18 | 中国地质大学（北京） | A kind of narrow-band optical filter and all-optical diode |
| EP3879314A4 (en) * | 2018-11-06 | 2022-04-20 | FUJIFILM Corporation | Imaging lens and imaging device |
| US12111560B2 (en) | 2018-11-06 | 2024-10-08 | Fujifilm Corporation | Imaging lens and imaging apparatus |
| CN114902111A (en) * | 2019-09-11 | 2022-08-12 | 标致雪铁龙汽车股份有限公司 | Cover element for projection opening of head-up display device |
| CN110880642A (en) * | 2019-11-29 | 2020-03-13 | 深圳先进技术研究院 | Near-zero refractive index metamaterial antenna |
| WO2021104113A1 (en) * | 2019-11-29 | 2021-06-03 | 深圳先进技术研究院 | Near-zero refractive index metamaterial antenna |
| CN110880642B (en) * | 2019-11-29 | 2021-10-01 | 深圳先进技术研究院 | Near-zero refractive index metamaterial antenna |
| CN112433364A (en) * | 2020-11-16 | 2021-03-02 | 邵阳学院 | Filter design method based on transmission rate and high-pass filtering of electromagnetic hyperdielectric abnormality |
| CN114660680A (en) * | 2022-03-22 | 2022-06-24 | 广东工业大学 | Photonic crystal structure design method with topological interface state |
| CN114660680B (en) * | 2022-03-22 | 2023-08-15 | 广东工业大学 | Photonic crystal structure design method with topological interface state |
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