CN100575998C - A kind of array type microresonant cavity tunable integrated optical filter - Google Patents
A kind of array type microresonant cavity tunable integrated optical filter Download PDFInfo
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- CN100575998C CN100575998C CN200810070878A CN200810070878A CN100575998C CN 100575998 C CN100575998 C CN 100575998C CN 200810070878 A CN200810070878 A CN 200810070878A CN 200810070878 A CN200810070878 A CN 200810070878A CN 100575998 C CN100575998 C CN 100575998C
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Abstract
A kind of array type microresonant cavity tunable integrated optical filter relates to a kind of optical filter.Provide a kind of based on the attainable array type microresonant cavity tunable integrated optical filter of present plane micro-nano processing technology.Be provided with substrate, set a layer metallic film on the substrate, establish dielectric layer on the lower metal film, the embedded with metal grating layer is established the upper strata metallic film on dielectric layer in the middle of dielectric layer.The metal grating layer is established some array elements, the cycle difference of metal grating in different array elements.Because of folder one deck between the double layer of metal film on the substrate is inlaid with the dielectric layer of metal grating, metal grating has the different cycles in the different integrated units on chip plane, thereby has regulated the equivalent refractive index in the different units.When light wave passed through this array type microresonant cavity tunable integrated optical filter, different array elements had different resonance wavelength, so form a transmission passband near the certain wave spectrum width resonance wavelength, played filter action.
Description
Technical field
The present invention relates to a kind of optical filter, especially relate to a kind of resonator cavity, be used for the array type microresonant cavity tunable integrated optical filter of integrated micro-optical systems based on metal micro-nanostructure.
Background technology
Along with development in science and technology and people produce, live to the demand of photovoltaic high-performance, intellectuality and portability, the microminiaturization of related device, an integrated important topic that just becomes research and development.Wherein optical filter is an important component part in the electro-optical system.But especially prepare the modulation integrated optical filter on chip, show (referring to document: 1, B.Y.Jung, N.Y.Kim, C.Lee, C.K.Hwangbo, and C.Seoul, Appl.Opt.41,3312 (2002) for colour; 2, S.Han, C.Huang, and Z.H.Lu, J.Appl.Phys.97,093102 (2005); 3, H.Zhang, J.Shi, W.Wang, S.Guo, M.Liu, H.You, and D.Ma, J.Lumin., 122-133,652 (2007)), chip-scale spectral analysis is (referring to document: 4, Z.Y.Wen, G.Chen, and J.G.Wang, Spectrosc.Spect.Anal.26,1955 (2006)) and the biological chemistry sensing (referring to document: 5, G.Lu, B.Cheng, H.Shen, Y.Zhou, et al., Appl.Phys.Lett.89,223904 (2006)) etc. important meaning all arranged.Wave filter based on the Fabry-Perot resonance effect is a kind of optical filter wherein the most frequently used, that effect is also best.But will be on chip integrated Fabry-Perot resonant cavity array corresponding to different resonance wavelengths, just need make different units interior resonance chamber length or (with) refractive index of medium is different in the chamber.This is that difficulty realizes on making for planar technology commonly used at present.Since having found to have periodically " unusually " transmission phenomenon that metallic film had of nanohole array (referring to document: 6, T.W.Ebbesen, J.J.Lezec, H.F.Ghaemi, T.Thio, and P.A.Wolff, Nature391,667 (1998)) since, many research and development personnel have proposed the multiple structure based on periodicity nano-pore (or seam) in this type of metallic film, size by nano-pore (seam) in the different units in the change chip plane, shape and combination are (referring to document: 7, Z.Sun, Y.S.Jung, and H.K.Kim, Appl.Phys.Lett.83,3021 (2003); 8, C.Genet, and T.W.Ebbesen, Nature 445,39 (2007); 9, C.Y.Chen, M.W.Tsai, T.H.Chuang, Y.T.Chang, and S.C.Lee, Appl.Phys.Lett.91,063108 (2007); 10, A.Battula and S.C.Chen, Appl.Phys.Lett.89,131113 (2006); 11, A.P.Hibbins, M.J.Lockyear, and J.R.Sambles, J.Appl.Phys.99,124903 (2006); 12, K.H.Su, Q.H.Wei, and X.Zhang, Appl.Phys.Lett.88,063118 (2006); 13, C.Cheng, J.Chen, Q.Y.Wu, F.F.Ren, J.Xu, Y.X.Fan, and H.T.Wang, Appl.Phys.Lett.91,111111 (2007)), they have represented the application potential of realizing integrated tunable optical filter of new generation.But also there are some limitations in they, such as, compare with the Fabry-Perot wave filter with same thickness (wherein transmission of resonator cavity two end portions and reflective metal film thickness are～20 nanometer thickness), this optical filter based on nano-pore (seam) array has the passband width (calculating with the half-breadth height, i.e. FWHM) of broad.Simultaneously, when the such nano-pore (seam) of processing has been the technology of quite difficulty, costliness and poor efficiency, make the physical dimension of different units endoporus (seam) array that small variation be arranged, then need machining precision to be controlled at dark nanometer scale, this is very difficult.
Summary of the invention
The object of the present invention is to provide a kind of based on the attainable array type microresonant cavity tunable integrated optical filter of present plane micro-nano processing technology.
Technical scheme of the present invention is to add the layer of metal grating between two-layer metallic film as thin as a wafer, the cycle difference of metal grating in different device cells, pass through light wave resonance wavelength also different, thereby be implemented near the passband of the certain wavelength coverage resonance wavelength.
The present invention is provided with substrate, on substrate, be provided with layer of metal film (claiming the lower metal film), on the lower metal film, be provided with dielectric layer, in the middle of dielectric layer, inlaying the metal grating layer, on dielectric layer, be provided with layer of metal film (deserving to be called a layer metallic film) again.The metal grating layer is provided with some array elements, the cycle difference of metal grating in different array elements.
Substrate can be transparent medium substrate or Semiconductor substrate, and Semiconductor substrate wherein can be the semi-conductor chip of having made optoelectronic device.
The metal material of lower metal film, metal grating and upper strata metallic film can be selected good conductor for use, as gold, silver, copper and aluminium etc., the metal material of selecting for use satisfies the as far as possible little absorptivity to light on the one hand, and the bulk plasmon frequency (body plasmon frequency) that satisfies metal on the other hand must be greater than the frequency of light wave that is suitable for.The thickness of upper strata metallic film and lower metal film should be very little, and thickness can be 5～100nm.Spacing between upper strata metallic film and the lower metal film can be 20～1000nm.The thickness of metal grating layer can be 5～1000nm, and the cycle of the metal grating of metal grating layer can be 10～10000nm, and the width of metal grating inner opening part can be 5～10000nm.
The dielectric layer of being located between upper strata metallic film and the lower metal film (also being the medium around metal grating) can adopt dielectric material, as silicon dioxide, silicon nitride, aluminium oxide etc.The thickness of dielectric layer can be 20～1000nm.
Metal grating in the metal grating layer can be one-dimensional metal grating or two-dimensional metallic grating.
The present invention also can be unsettled in micro-optical systems, promptly in the zone of action substrate etching etching or structure is shifted and removes.
The present invention compares with traditional Fabry-Perot resonant cavity filter, the present invention is not the resonance wavelength that the variations in refractive index of the dielectric material of length (being thickness of dielectric layers) by resonator cavity or resonator cavity is come the modulation transmitted light, but the resonance wavelength of coming the modulation transmitted light by the structure (mainly being the cycle) that changes the metal grating of being inlayed in the resonator cavity medium.The present invention on technology also with existing plane micro-nano processing technology compatibility, and the passband width of wave filter (with the halfwidth evaluation) and all very close in the transmissivity of resonance wave strong point.The present invention compares with nano-pore (seam) wave filter described in the document (6～13), reduces greatly on technology difficulty, and the transmitted light passband width is narrower, and the transmissivity of resonance wave strong point is bigger, has many-sided advantage.
Description of drawings
Fig. 1 is that the embodiment of the invention 1 (adopting the one-dimensional metal grating) edge is perpendicular to the structural representation in the xsect of metal grating bar.
Fig. 2 is the decomposing schematic representation successively of Fig. 1.
Fig. 3 is that the embodiment of the invention 2 (adopting the two-dimensional metallic grating) edge is perpendicular to the structural representation in the xsect of metal grating bar.
Fig. 4 is the decomposing schematic representation successively of Fig. 3.
Fig. 5 is that the embodiment of the invention 3 (adopting netted two-dimensional metallic grating) edge is perpendicular to the structural representation in the xsect of metal grating bar.
Fig. 6 is the decomposing schematic representation successively of Fig. 5.
Fig. 7 is the structural representation of the embodiment of the invention 4.In Fig. 7, be that the structural unit with the different cycles of embodiment 1,2 or 3 is integrated on the chip, form the array type filtering device, the transmission resonance wavelength that each unit is corresponding different; Unit 1: wavelength X
1, unit 2: wavelength X
2, unit 3: wavelength X
3Unit n: wavelength X
nCorresponding to the cycle P1 of metal grating layer, cycle P2, cycle P3 ... cycle Pn.
Fig. 8 is based on the symbolic representation of relevant physical dimension in the computation model of embodiment 1 structure and coordinate definition thereof.Wherein black region is represented metal, and t represents the thickness of double layer of metal film up and down, establishes them and equates; H represents the thickness of metal grating; P represents the cycle of metal grating; W represents that the metal part is at horizontal width in the metal grating; L represents the distance between the double layer of metal film up and down; S represents metal grating and the distance between the double layer of metal film up and down, establishes metal grating and be positioned at the centre of double layer of metal film up and down in calculating; As can be seen: L=h+2s.
Fig. 9 is for (Finite-Difference Time-Domain, FDTD) Mo Ni structure as shown in Figure 8 is at not pairing simultaneously transmitted spectrum of the cycle of metal grating with the finite time-domain method of difference.In Fig. 9, establish t=20nm, L=200nm, h=100nm, w=30nm, s=50nm, metal are silver, structure up and down and the medium of going up between metal membrane all be made as air; Horizontal ordinate is wavelength X (nm), and ordinate is a transmissivity; Wherein, the pairing different cycles of the different curves of spectrum is: p=100,120,150,200,300,400,800nm; " p=∞ " expression is up and down calculated transmitted spectrum with the finite time-domain method of difference during no metal grating between the double layer of metal film; The curve representation that indicates " TMM " up and down usefulness method of transition matrices during no metal grating between the double layer of metal film (Transfer Matrix Method, TMM) calculate transmitted spectrum.
Figure 10 is for by setting up the curve that micro-nano structure material equivalent refractive index changed with the cycle between the film of double layer of metal up and down that physical model calculating obtains.In Figure 10, horizontal ordinate is period p (nm), and ordinate is equivalent refractive index N
EffThe curve that wherein indicates " AMXMA (TMM) " be based among Figure 10 with the finite time-domain method of difference calculate the resonance wavelength of different cycles, the structure and material between the double layer of metal film up and down is considered as a kind of EFFECTIVE MEDIUM X, then based on (air-metal-EFFECTIVE MEDIUM-metal-air, or abbreviation AMXMA) sandwich construction finds a refractive index corresponding to the resonance wavelength of calculating with the finite time-domain method of difference by method of transition matrices (TMM), and this is the equivalent refractive index of EFFECTIVE MEDIUM X; The curve that indicates " CWGA " is that the metal grating of looking wherein is the waveguide array that intercouples, utilize relevant coupled waveguide array (CoupledWaveguide Arrays, or abbreviation CWGA) theoretical (list of references: 14, X.Fan, G.P.Wang, J.C.Lee, and C.T.Chan, Phys.Rev.Lett.97,073901 (2006)) calculate the curve that changes with the cycle of equivalent refractive index.
Figure 11 is the structural representation of the embodiment of the invention 5.In Figure 11, be the example explanation with 3 hyperelements, more hyperelement can be arranged, this structure is suitable for and the modulation with the filtering of broad wave spectrum scope; Comprise unit 1 in the hyperelement 1: wavelength X
1, unit 2: wavelength X
2Unit n: wavelength X
nComprise unit n+1: wavelength X n+1 in the hyperelement 2, unit n+2: wavelength X n+2 ... unit m: wavelength X m; Comprise unit m+1: wavelength X m+1 in the hyperelement 3, unit m+2: wavelength X m+2 ... unit l: wavelength X l.Be to have different embodiment 4 structures of different-thickness (distance between the double layer of metal film up and down) to be integrated on the chip transmission resonance wavelength scope that each hyperelement is corresponding different as " hyperelement ".
Embodiment
Following examples will the present invention is further illustrated in conjunction with the accompanying drawings.
Fig. 1～2 provide a kind of synoptic diagram of embodiment 1 of cellular construction of array type microresonant cavity tunable integrated optical filter.This structure is provided with substrate 11, is provided with lower metal film 12 on substrate 11, has one deck wherein to be inlaid with the dielectric layer 14 of one-dimensional metal grating 15 on lower metal film 12, and upper strata metallic film 13 is arranged on dielectric layer 14 again.Substrate 11 can be selected as transparent medium substrate or Semiconductor substrate (Semiconductor substrate wherein can be the semi-conductor chip of having made optoelectronic device); Lower metal film 12, upper strata metallic film 13 and metal grating layer 15 can be selected as good conductor metal materials such as gold, silver, copper and aluminium; Dielectric layer 14 can be selected as high-transmission rate dielectric materials such as silicon dioxide, silicon nitride, aluminium oxide.The thickness of lower metal film 12 and upper strata metallic film 13 should (～20nm) same magnitude be as being chosen between 5～100nm with therein transmission depth of light wave.Spacing between lower metal film 12 and the upper strata metallic film 13 (also being the thickness of dielectric layer 14) can be between 20～1000nm.The thickness of metal grating layer 15 can be between 5～1000nm.The cycle of metal grating layer 15 is between 10～10000nm.The width of metal grating layer 15 inner opening part can be between 5～10000nm.Concrete size is design and definite according to using.
Fig. 3～4 provide a kind of synoptic diagram of embodiment 2 of cellular construction of array type microresonant cavity tunable integrated optical filter.This structure is provided with substrate 21, is provided with lower metal film 22 on substrate 21, has one deck wherein to be inlaid with the dielectric layer 24 of island two-dimensional metallic grating 25 on lower metal film 22, and upper strata metallic film 23 is arranged on dielectric layer 24 again.Substrate 21 can be selected as transparent medium substrate or Semiconductor substrate (Semiconductor substrate wherein can be the semi-conductor chip of having made optoelectronic device); Lower metal film 22, upper strata metallic film 23 and metal grating layer 25 can be selected as good conductor metal materials such as gold, silver, copper and aluminium; Dielectric layer 24 can be selected as high-transmission rate dielectric materials such as silicon dioxide, silicon nitride, aluminium oxide.The thickness of lower metal film 22 and upper strata metallic film 23 should (～20nm) same magnitude be as being chosen between 5～100nm with therein transmission depth of light wave.Spacing between lower metal film 22 and the upper strata metallic film 23 (also being the thickness of dielectric layer 24) can be between 20～1000nm.The thickness of metal grating layer 25 can be between 5～1000nm.Metal grating layer 25 two cycles in vertical direction are all between 10～10000nm.Distance between metal grating layer 25 lagoon island can be between 5～10000nm.Concrete size is design and definite according to using.
Fig. 5～6 provide a kind of synoptic diagram of embodiment 3 of cellular construction of array type microresonant cavity tunable integrated optical filter.This structure is provided with substrate 31, is provided with lower metal film 32 on substrate 31, has one deck wherein to be inlaid with the dielectric layer 34 of netted two-dimensional metallic grating 35 on lower metal film 32, and upper strata metallic film 33 is arranged on dielectric layer 34 again.Substrate 31 can be selected as transparent medium substrate or Semiconductor substrate (Semiconductor substrate wherein can be the semi-conductor chip of having made optoelectronic device); Lower metal film 32, upper strata metallic film 33 and metal grating layer 35 can be selected as good conductor metal materials such as gold, silver, copper and aluminium; Dielectric layer 34 can be selected as high-transmission rate dielectric materials such as silicon dioxide, silicon nitride, aluminium oxide.The thickness of lower metal film 32 and upper strata metallic film 33 should (～20nm) same magnitude be as being chosen between 5～100nm with therein transmission depth of light wave.Spacing between lower metal film 32 and the upper strata metallic film 33 (also being the thickness of dielectric layer 34) can be between 20～1000nm.The thickness of metal grating layer 35 can be between 5～1000nm.Metal grating layer 35 two cycles in vertical direction are all between 10～10000nm.The length of side of mesh can be between 5～10000nm in the metal grating layer 35.Concrete size is design and definite according to using.
Fig. 7 provides the synoptic diagram of a kind of array type microresonant cavity tunable integrated optical filter of embodiment 4.This structure is provided with substrate 41, on substrate 41, be provided with lower metal film 42, on lower metal film 42, there is one deck wherein to be inlaid with the dielectric layer 44 of metal grating 45 (for one dimension or the two-dimensional metallic grating among the embodiment 1,2 or 3), upper strata metallic film 43 is arranged on dielectric layer 44 again.Wherein among this embodiment the structure in the integrated different units on same chip, each unit is the structure of embodiment 1,2 or 3, but in different units the cycle of metal grating (P1, P2, P3, ..., Pn) difference with the change in location on chip, also (λ 1 corresponding to different transmission resonance wavelength in different unit, λ 2, λ 3 ..., λ n).Wherein, selection of the material of device each several part and physical dimension can be selected to determine as the material and the structure of front embodiment 1,2 or 3.Have same thickness and the lower metal film 42 that links to each other, upper strata metallic film 43 and dielectric layer 44 for structural units different on the chip.
For a kind of array type microresonant cavity tunable integrated optical filter of the present invention, in concrete enforcement, can be at first as required select the device architecture (as embodiment 1,2,3 or 4) that will adopt and then the size of designing institute device architecture with the manufacturing process that is possessed.As for embodiment 1 with to adopt embodiment 1 be the embodiment 4 of cellular construction, tentatively, forward design can be at first according to the equivalent refractive index of the calculating metal grating of CWGA theory (referring to document 14) and the relation between the metal grating structure size, utilizing method of transition matrices to determine then based on the transmission resonance wavelength of the intermembranous EFFECTIVE MEDIUM of double layer of metal about the gained and the relation between the equivalent refractive index, so also just determine the relation between transmission resonance wavelength and the metal grating structure size (especially its cycle), thereby can design device architecture as required.In the application of CWGA theory, metal grating can be counted as the waveguide array that laterally intercouples, and the equivalent refractive index of light wave by as the waveguide array of EFFECTIVE MEDIUM the time can be defined as: N
Eff=Re (β/k
0), k wherein
0=2 π/λ
0Be light wave wave vector in a vacuum, λ
0Be vacuum wavelength, β=(β
s+ β
a)/the 2nd, the light wave propagation constant in waveguide array, β
sAnd β
aBe respectively light wave is propagated time symmetry and antisymmetric mode in waveguide array propagation constant, they are calculated by following formula:
B=[(ε wherein
mκ+ε
dQ)-(ε
mκ-ε
dQ) e
-2 κ (p-w)] ε
mκ/[(ε
mκ+ε
dQ)+(ε
mκ-ε
dQ) e
-2 κ (p-w)] ε
dQ,
ε
dAnd ε
mBe to constitute metal grating (also the being waveguide array) medium of EFFECTIVE MEDIUM and the specific inductive capacity of metal, symmetry between " ± " expression adjacent waveguide and antisymmetry coupling.The curve that indicates " CWGA " among Figure 10 provided with this method calculate the equivalent refractive index N for the EFFECTIVE MEDIUM in different metal grating cycle
EffAnd the relation between the cycle (establish t=20nm, L=200nm, h=100nm, w=30nm, s=50nm, metal are silver, structure up and down and the medium of going up between metal membrane all be made as air).
In design, if the required wave spectrum scope that comprises is wider, but owing to the restriction that is subjected to manufacturing process and physical essence factor make can modulation wavelength coverage can not be wide the time, can in bigger range scale, (such as tens microns) form one " hyperelement " (as embodiment 4) by a plurality of embodiment 1,2 or 3 structural units, at the different cavity length of different " hyperelement " designs (the intermembranous distance of double layer of metal promptly), constitute entire device by a plurality of " hyperelement ", embodiment 5 as shown in figure 11.Wherein 51 is substrate, and 52 is the metallic film on the substrate, and 53 for being inlaid with the dielectric layer of metal grating in each hyperelement, and 54 for being positioned at the metallic film on the dielectric layer in each hyperelement.
Claims (9)
1. array type microresonant cavity tunable integrated optical filter, it is characterized in that being provided with substrate, on substrate, be provided with the lower metal film, on the lower metal film, be provided with dielectric layer, in the middle of dielectric layer, inlaying the metal grating layer, be provided with the upper strata metallic film on dielectric layer again, the metal grating layer is provided with some array elements, the cycle difference of metal grating in different array elements.
2. a kind of array type microresonant cavity tunable integrated optical filter as claimed in claim 1 is characterized in that substrate is transparent medium substrate or Semiconductor substrate.
3. a kind of array type microresonant cavity tunable integrated optical filter as claimed in claim 2 is characterized in that Semiconductor substrate is a semi-conductor chip of having made optoelectronic device.
4. a kind of array type microresonant cavity tunable integrated optical filter as claimed in claim 1, the metal material that it is characterized in that lower metal film, metal grating and upper strata metallic film is a good conductor, good conductor is selected from gold, silver, copper or aluminium.
5. a kind of array type microresonant cavity tunable integrated optical filter as claimed in claim 1, the thickness that it is characterized in that upper strata metallic film and lower metal film is 5～100nm.
6. as claim 1 or 5 described a kind of array type microresonant cavity tunable integrated optical filters, it is characterized in that the spacing between upper strata metallic film and the lower metal film is 20～1000nm.
7. a kind of array type microresonant cavity tunable integrated optical filter as claimed in claim 1, the thickness that it is characterized in that the metal grating layer is 5～1000nm.
8. a kind of array type microresonant cavity tunable integrated optical filter as claimed in claim 1 is characterized in that dielectric layer is silica dioxide medium layer, silicon nitride medium layer or alumina medium layer; The thickness of dielectric layer is 20～1000nm.
9. as claim 1 or 7 described a kind of array type microresonant cavity tunable integrated optical filters, it is characterized in that the metal grating in the metal grating layer is one-dimensional metal grating or two-dimensional metallic grating.
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| US9202832B2 (en) * | 2011-04-19 | 2015-12-01 | Infineon Technologies Ag | Integrated circuit arrangements |
| CN103744198B (en) * | 2014-01-26 | 2016-09-07 | 东南大学 | Periodicity sub-wave length metal grating wave filter of voltage modulated and preparation method thereof |
| JP2015232599A (en) * | 2014-06-09 | 2015-12-24 | ソニー株式会社 | Optical filter, solid state image pickup device, and electronic apparatus |
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| CN106092038B (en) * | 2016-06-06 | 2018-08-17 | 宁波大学 | A kind of method in exploring laser light two dimension orientation and wavelength |
| KR102020956B1 (en) * | 2016-08-30 | 2019-10-18 | 삼성전자주식회사 | Optical Filter and Optical device Using the Same |
| CN112014915B (en) * | 2019-05-30 | 2022-04-01 | 西北工业大学深圳研究院 | Multilayer symmetrical two-dimensional transmission grating with adjustable 10-14 micron central wavelength and preparation method thereof |
| CN110360935B (en) * | 2019-07-31 | 2020-05-12 | 西北工业大学 | In-plane displacement sensing unit and method based on simplified optical nano resonant cavity |
| CN113820013A (en) * | 2021-07-08 | 2021-12-21 | 湖南大学 | Transmission type super-structure surface multispectral imager based on Fabry-Perot cavity |
| CN114142193B (en) * | 2021-12-02 | 2022-10-14 | 昆山鸿永微波科技有限公司 | Dual-mode high-reliability silicon-based filter and manufacturing method thereof |
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