CN104570184B - One can the miniature light filter in integrated arrowband - Google Patents
One can the miniature light filter in integrated arrowband Download PDFInfo
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- CN104570184B CN104570184B CN201510026670.5A CN201510026670A CN104570184B CN 104570184 B CN104570184 B CN 104570184B CN 201510026670 A CN201510026670 A CN 201510026670A CN 104570184 B CN104570184 B CN 104570184B
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
Abstract
One can the miniature light filter in integrated arrowband, relate to a kind of light filter.It is provided with substrate, dielectric film Rotating fields and metal grating；Dielectric film Rotating fields is located at substrate top surface, dielectric film Rotating fields is provided with at least 2 layers of dielectric thin film layer, the refractive index of every layer of dielectric thin film layer is different, and metal grating is located at dielectric film Rotating fields upper surface, and metal grating is one-dimensional metal grating or two-dimensional metallic grating.By regulation screen periods, dielectric thin film layer refractive index and thickness, centre wavelength and the bandwidth of filter passband can be regulated.There is reduced size, be conducive to integrated application in micro-optical systems and photoelectric device.For integrated micro-optical systems or be integrated realizing in the opto-electronic device filtering functions.Can be produced on transparent medium substrate, use in micro-optical systems as unit component, it is also possible to be integrated in the opto-electronic device as a construction unit, realize filtering functions to photoelectric device is light emitted.
Description
Technical field
The present invention relates to a kind of light filter, especially relating to one based on metal micro-nanostructure can the miniature filter in integrated arrowband
Light device.
Background technology
Light filter is an important component part in optical system and photoelectric device.Along with people are to high-performance, intelligence
Change, the demand of portability photovoltaic, the miniaturization of light filter, integrated become an important technology problem.Have high-quality,
The ultra-thin light filter of transmittance of narrow bandwidth especially has important function in micro-optical systems and device, and it is possible not only to be wherein
There is the separate unit of filtering functions, it is also possible to be integrated in as the construction unit of more complicated photoelectric device and wherein play filter
Light function.
For miniature light filter, cavity structure based on Fabry-Perot resonance effect be most common of which, effect the most relatively
One well [as involved by documents below: 1, B.Y.Jung, N.Y.Kim, C.Lee, C.K.Hwangbo, and C.Seoul,
Appl.Opt.41,3312(2002)；2、G.Lu,B.Cheng,H.Shen,Y.Zhou,et al.,Appl.Phys.Lett.89,
223904(2006)；3、H.Zhang,J.Shi,W.Wang,S.Guo,M.Liu,H.You,and D.Ma,J.Lumin.,122-
133,652(2007)；4、Z.Y.Wen,G.Chen,and J.G.Wang,Spectrosc.Spect.Anal.26,1955
(2006).】.Before and after this structure of the light filter, reflecting mirror can be metallic film or multilamellar periodic dielectric thin film composition
Prague (Bragg) reflecting mirror.This structure is typically limited by cavity length, optical filtering broader bandwidth；And narrower bandwidth to be made,
Be accomplished by reflecting mirror reflection coefficient very big or (with) cavity length is bigger；And cavity length bigger time, higher order resonances brings less
Adjacent pass-bands spacing.So this structure is not sometimes suitable for miniaturization optical system closely and device and filters high-quality
The requirement of light function.And will on chip the integrated Fabry-Perot resonant cavity array corresponding to different resonance wavelengths, just need
The length in different units interior resonance chamber to be made or (with) refractive index of intracavity medium is different.This is for the most conventional planar technology
For, it is more difficult realization on manufacturing." different since being found that the metallic film with periodic nanometer hole array is had
Often " transmission phenomenon [see document: 5, T.W.Ebbesen, J.J.Lezec, H.F.Ghaemi, T.Thio, and P.A.Wolff,
Nature 391,667 (1998)] since, many R&D Professional propose based on periodic nanometer in this metalloid thin film
The various structures in hole (or seam), by the size of nano-pore (seam), shape and combination [ginseng in different units in change chip plane
See document: 6, Z.Sun, Y.S.Jung, and H.K.Kim, Appl.Phys.Lett.83,3021 (2003)；7、C.Genet,
and T.W.Ebbesen,Nature 445,39(2007)；8、C.Y.Chen,M.W.Tsai,T.H.Chuang,Y.T.Chang,
and S.C.Lee,Appl.Phys.Lett.91,063108(2007)；9、A.Battula and S.C.Chen,
Appl.Phys.Lett.89,131113(2006)；10、A.P.Hibbins,M.J.Lockyear,and J.R.Sambles,
J.Appl.Phys.99,124903(2006)；11、K.H.Su,Q.H.Wei,and X.Zhang,Appl.Phys.Lett.88,
063118(2006)；12、C.Cheng,J.Chen,Q.Y.Wu,F.F.Ren,J.Xu,Y.X.Fan,and H.T.Wang,
Appl.Phys.Lett.91,111111 (2007)], they present the application realizing integrated tunable optical filter of new generation
Potentiality.But they there is also some limitations.Such as, due to based on wherein surface phasmon ripple (Surface Plasmon,
SP) resonance effect, light wave is lost bigger in the resonant process of transmission so that this optics based on nano-pore (seam) array is filtered
Ripple utensil has wider passband width (calculating, i.e. FWHM, typically about 100～200nm) with half-breadth height.
Summary of the invention
It is an object of the invention to provide can be used for the one of micro-optical systems and photoelectric device can the miniature filter in integrated arrowband
Light device.
The present invention is provided with substrate, dielectric film Rotating fields and metal grating；
Dielectric film Rotating fields is located at substrate top surface, and dielectric film Rotating fields is provided with at least 2 layers of dielectric thin film layer, every layer
The refractive index of dielectric thin film layer is different, and metal grating is located at dielectric film Rotating fields upper surface, and metal grating is one-dimensional metal light
Grid or two-dimensional metallic grating.
Described substrate can be Semiconductor substrate or transparent medium substrate；Described Semiconductor substrate can be used for making involved
The semiconductor base materials of photoelectric device；Described transparent medium substrate can be insulator dielectric thin film layer, as silicon oxide (includes stone
English), aluminium oxide, silicon nitride and plastics or other polymer etc..
The metal material that described metal grating uses can be selected for good conductor, such as gold, silver, copper, aluminum etc., the metal material of selection
There is the least absorbance characteristic to light, and plasma frequency (body plasmon frequency) must be more than
The frequency of light wave being suitable for.The metal layer thickness of described metal grating can be 20～100nm, and the cycle of metal grating can be 200
～10000nm, the width of the inner opening part of metal grating generally should be smaller than cycle half, preferably 10～5000nm.Described two
Dimension metal grating can be netted two-dimensional metallic grating or island two-dimensional metallic grating.
The dielectric film layer material of described dielectric film Rotating fields can use insulating material or semi-conducting material, insulator
Material can be silicon dioxide, silicon nitride, aluminium oxide etc.；Semi-conducting material can be selected at involved spectral region interior focusing ripple without inhaling
Receive or the semi-conducting material of low absorption, such as silicon, germanium, iii-v or II-VI group compound semiconductor etc..Described dielectric thin film layer
The gross thickness of structure can be 20～2000nm.
The present invention proposes a kind of novel structure of the light filter based on metal micro-nanostructure, and its passband halfwidth can be tens to receive
Rice or even a few nanometer, and there is higher passband absorbance.Putting it briefly, it is to have the super of certain size requirement at one layer
Add below thin metal nano optical grating construction and introduce the waveguiding structure with multilayer dielectricity.By regulation screen periods, Jie
Matter thin layer refractive index and thickness, can regulate centre wavelength and the bandwidth of filter passband.
Compared with the prior art, the present invention has a following outstanding advantages:
The present invention is totally different from principle has Fabry-Perot cavity resonator structure described in document [1-4]
Light filter.With structure of the light filter based on periodic nanometer hole in metallic film (or seam) in document [5-12] compares, it is not
Strengthen transmission based on the resonance of surface phasmon ripple in nano-pore (seam) to realize filtering, but by metal in metal grating
In surface phasmon wave mode below Ceng or metal level antisymmetry surface phasmon wave mode with in dielectric multi-layer optical thin film
The optical waveguide mode Fano mode of resonance that intercouples caused and formed；It has narrower optical filtering passband and relatively low
Avris transmission bands.Of the present invention a kind of can the miniature light filter in integrated arrowband in technique with existing plane micro-nano technology work
Skill is compatible, has reduced size, is conducive to integrated application in micro-optical systems and photoelectric device.For integrated micro-optical
Unite or be integrated realizing in the opto-electronic device filtering functions.Different layers thin-film material in present media thin film has difference
Refractive index, and have in dielectric multi-layer optical thin film that refractive index is higher in the case of substrate exists one layer, thus form light wave
Guide structure, i.e. introduces an optical waveguide structure below transmissive metal grating.By optical waveguide mode in dielectric structure and gold
Belong to the medium coupling from polariton modes of grating, form the Fano mode of resonance of low-loss hybrid guided mode phasmon pattern, its performance
For a narrower passband spectral peak occurring on transmission spectrum, in order to realize filtering functions.One of the present invention can be integrated narrow
Carry miniature light filter can be produced on transparent medium substrate, use in micro-optical systems as unit component, it is also possible to collection
Become in the opto-electronic device as a construction unit, realize filtering functions to photoelectric device is light emitted.
Accompanying drawing explanation
Fig. 1 is the structural representation (side-looking) of the embodiment of the present invention 1 (metal grating is one-dimensional metal grating).
Fig. 2 is the cross-sectional structure schematic diagram of Fig. 1.
Fig. 3 is the structural representation (side-looking) of the embodiment of the present invention 2 (metal grating is two-dimensional metallic grating).
Fig. 4 is the structural representation (side-looking) of the embodiment of the present invention 3 (metal grating is island two-dimensional metallic grating).
Fig. 5 is that in computation model based on embodiment 1 structure, symbol about physical dimension represents and defines schematic diagram.
Wherein, tmRepresent the thickness of metal grating layer；P represents the cycle of metal grating；S represents the gap width in metal grating；nLTable
Show the refractive index of the dielectric film layer material with relatively lower refractive rate；nHRepresent that the medium with of a relatively high refractive index is thin
The refractive index of film material；nsRepresent the refractive index of backing material；tLRepresent the dielectric film thickness with relatively lower refractive rate
Degree；tHRepresent the dielectric film layer thickness with of a relatively high refractive index.Set metal material in the calculation as silver, substrate dielectric
Refractive index ns=nL。
Fig. 6 calculates for using finite time-domain calculus of finite differences (Finite-Difference Time-Domain, FDTD) simulation
The structure transmission light to the TM polarized light (incident light polarization direction is vertical with the direction of gratings strips) of vertical incidence as shown in Figure 5
Spectrum.Wherein, metal material is silver；The refractive index of associated media material is ns=nL=1.5, nH=2；Structural parameters are respectively as follows: tm
=40nm, p=400nm, s=80nm, tL=100nm, tH=200nm.Backing material sufficiently thick (being set to semo-infinite big).By Fig. 6
Visible, in transmitted spectrum, at vacuum wavelength λ ≈ 675nm, there is the spectral peak of the high a width of about 12nm of half, can be as of the present invention
A kind of can the optical filtering passband of the miniature light filter in integrated arrowband.
Fig. 7 is that the structure as shown in Figure 5 using the simulation of finite time-domain calculus of finite differences to calculate is when metal grating thickness difference pair
The transmitted spectrum of the TM polarized light of vertical incidence.Wherein, metal material is silver；ns=nL=1.5, nH=2；P=400nm, s=
80nm,tL=100nm, tH=200nm；T different in figuremIt is respectively 10nm, 40nm and 160nm.As seen from Figure 7, metal
The thickness of grating needs under suitable size cases (such as tm=40nm) being just advantageously implemented one of the present invention can be integrated
High-quality (the avris transmission bands that pass band width is narrow, the relatively low) filtering functions of the miniature light filter in arrowband.
Fig. 8 is that the structure as shown in Figure 5 using the simulation of finite time-domain calculus of finite differences to calculate is hung down when metal grating cycle difference
The transmitted spectrum of straight incident TM polarized light.Wherein, metal material is silver；ns=nL=1.5, nH=2；tm=40nm, s=
80nm,tL=100nm, tH=200nm；P different in figure is respectively 400nm and 800nm.As seen from Figure 8, optical filtering passband
Centre wavelength position can realize modulation with the change in metal grating cycle.
Fig. 9 is that the structure as shown in Figure 5 using the simulation of finite time-domain calculus of finite differences to calculate has relatively lower refractive rate
The transmitted spectrum of the TM polarized light of vertical incidence during dielectric film layer thickness difference.Wherein, metal material is silver；ns=nL=
1.5, nH=2；P=400nm, tm=40nm, s=80nm, tH=200nm；T different in figureLBe respectively 20nm, 100nm and
200nm.As seen from Figure 9, the bandwidth of optical filtering passband is with tLIncrease and reduce, as at tLDuring=200nm, passband halfwidth is little
To only about 3nm.
Detailed description of the invention
Following example combine accompanying drawing, and the invention will be further described.
Embodiment 1
Seeing Fig. 1 and 2, the present embodiment 1 is provided with substrate 11, and face is provided with one layer and has of a relatively high refractive index on the substrate 11
Dielectric thin film layer 12, be arranged above with one layer of dielectric thin film layer 13 with relatively lower refractive rate at dielectric thin film layer 12,
Dielectric thin film layer 13 is arranged above with one layer of periodically one-dimensional metal grating 14, has gap between the bonding jumper of metal grating 14
15.Substrate 11 selects transparent medium substrate or Semiconductor substrate, and (Semiconductor substrate can be for making involved photoelectric device
Semiconductor base materials).Dielectric thin film layer 12 select the dielectric such as silicon nitride, aluminium oxide or other have in involved optical band
There is the semi-conducting material of low absorption, high-transmission rate；Under dielectric thin film layer 12 is alternatively in semiconductor photoelectric device in working order
There is the active area materials of high index；Dielectric thin film layer 12 be alternatively the above medium or (with) semi-conducting material is many
What Rotating fields was formed has the EFFECTIVE MEDIUM thin layer of high index.The dielectrics such as dielectric thin film layer 13 selective oxidation silicon
Or other has the semi-conducting material of low absorption, high-transmission rate in involved optical band；Dielectric thin film layer 13 is alternatively quasiconductor
Photoelectric device has down the semi-conducting material of relatively low-refraction；Dielectric thin film layer 13 is alternatively the above and is situated between
Matter is or/and the EFFECTIVE MEDIUM thin layer with relatively low-refraction that formed of the multiple structure of semi-conducting material.Metal grating 14
Metal material select good conductor, such as gold, silver, copper or aluminum etc..The metal layer thickness of metal grating is 20～100nm.Metal light
The cycle of grid is 200～10000nm.The width of metal grating inner opening part is less than cycle half, is 10～5000nm.Medium
The gross thickness of thin layer 12 and dielectric thin film layer 13 is 20～2000nm.Concrete structure size sets according to applicable cases.
Embodiment 2
See Fig. 3, similar to Example 1.Difference is, metal grating is netted two-dimensional metallic grating.The present embodiment 2 sets
Having substrate 21, face is provided with one layer of dielectric thin film layer 22 with of a relatively high refractive index on substrate 21, at dielectric thin film layer 22
There is one layer of dielectric thin film layer with relatively lower refractive rate 23 above, have one layer of periodicity netted on dielectric thin film layer 23
Two-dimensional metallic grating 24, has hole 25 in netted two-dimensional metallic grating 24.In the present embodiment, substrate 21, dielectric thin film layer
22, dielectric thin film layer 23, the material of two-dimensional metallic grating 24 select respectively with substrate 11 in embodiment 1, dielectric thin film layer 12, be situated between
Matter thin layer 13, the material of one-dimensional metal grating 14 select identical.
In the present embodiment, the range of choice of Each part size is identical with the physical dimension of corresponding part in embodiment 1,
Concrete structure size sets according to application.
Embodiment 3
See Fig. 4, similar to Example 1.Difference is, metal grating is island two-dimensional metallic grating.The present embodiment 3 sets
There is substrate 31, be arranged above with one layer of dielectric thin film layer 32 with of a relatively high refractive index at substrate 31, at dielectric thin film layer 32
There is one layer of dielectric thin film layer with relatively lower refractive rate 33 above, on dielectric thin film layer 33, have one layer of periodically island
Two-dimensional metallic grating 34.In this embodiment, substrate 31, dielectric thin film layer 32, dielectric thin film layer 33, the material of two-dimensional metallic grating 34
Material selects to select with substrate 11, dielectric thin film layer 12, dielectric thin film layer 13, the material of one-dimensional metal grating 14 in embodiment 1 respectively
Select identical.
In the present embodiment, the range of choice of Each part size is identical with the physical dimension of corresponding part in embodiment 1,
Concrete size sets according to application.
Above-described embodiment 1,2 and 3 can independently use or be integrated in micro-optical systems use as light filter, it is also possible to collection
Become to use as a construction unit with filtering functions in the opto-electronic device.
One of the present invention can the miniature light filter in integrated arrowband, in being embodied as, first according to application background, skill
Art needs and manufacturing process selects device architecture (such as embodiment 1,2 or 3) to be taken, then redesigns used device junction
The size of structure.As for embodiment 1, first can according in application to optical filtering passband center wavelengths (λ0) demand and to medium
Thin layer 12 and the material of dielectric thin film layer 13 and the requirement of thickness, the cycle of estimation metal grating 14；Pass through numerical value the most again
Calculating simulation and experimental verification carry out the size of further optimised devices structure.In estimation process, it is assumed that known involved substrate,
Medium and the refractive index of metal material and there is the dielectric thin film layer of different refractivity and the preset thickness of metal level, first with
Light Wave Guide Theory analytic process calculate have " air/metal level/low refractive index dielectric thin layer/high refractive index medium thin layer/
Substrate dielectric " the multiple equivalent refractive index of waveguide mode field being mainly distributed on to high refractive index medium thin layer of waveguiding structure
Neff.Then, the cycle of metal grating can be just p ≈ Re (Neff)/λ0；Utilize its waveguide mode at single order condition of resonance at this
Under transmission spectral peak.Generally for concrete application, involved material determines substantially, and then we can directly obtain
It is in the index distribution of involved spectral region.Then, during design and optimizing, we mainly determine that its structure is joined
Number.Wherein, the thickness of metal grating and each dielectric thin film layer is to NeffHave a direct impact.In general, there is high index
Dielectric thin film layer 12 should be the not thickest, can be about in the light half-wavelength size wherein of optical filtering passband center wavelengths, with involved
And spectral region only has the basic mode of waveguide mode to exist.For the thickness of metal grating 14, typically should be in involved spectral region
The yardstick of interior light transmission depth in this metal, such as tens nanometers, is difficult to the thickest or the thinnest (shown in Figure 7).For
Having the dielectric thin film layer 13 of relatively low-refraction, its thickness has material impact to the bandwidth of optical filtering passband, increases with its thickness,
Pass band width reduces；But its thickness is not easy to too big, otherwise involved for having high index dielectric thin film layer
Waveguide mode and the coupling between the surface plasmon waveguide pattern of metal level are by weakened, or other waveguide mode occur,
Thus cause the deterioration of optical filtering passband spectral peak；Its thickness general can be at the light of optical filtering passband center wavelengths sub-wavelength chi wherein
Degree size.
It is as follows that the numerical simulation calculation (result is as shown in Fig. 6～9) done based on structure in Fig. 5 shows that this light filter has
Some features.As shown in Figure 6, having a transmission passband the narrowest in the range of bigger transmitted spectrum, both sides are being composed without other
The peak, side can compared on peak intensity, meets the basic demand of high-quality light filter.As it is shown in fig. 7, in the design, metal grating
Thickness need suitable.As metal grating is the thinnest, background transmission light all can be the strongest in bigger spectral region；And the thickest, then exist
Long wavelength's avris of arrowband transmission peaks for filtering there will be a broader bandwidth and the higher transmission spectral peak of absorbance, this
It is unfavorable for realizing high-quality (the avris transmission bands that pass band width is narrow, relatively low) filtering functions.As shown in Figure 8, at this light filter
Design in, can be by the change in metal grating cycle being regulated the position of optical filtering passband center wavelengths；And can be
It is adjusted in wider spectral region.As it is shown in figure 9, in the design of this light filter, can be by regulation low-refraction
The thickness of dielectric thin film layer regulates the bandwidth of optical filtering passband.In general, low refractive index dielectric thin layer is the thickest, optical filtering passband
Bandwidth is the least；But the thickest, optical filtering pass band width reduces simultaneously, and optical filtering passband transmittance peak can diminish.So at device
Design needs trade off according to actual needs, optimize.
Claims (6)
1. one kind can the miniature light filter in integrated arrowband, it is characterised in that be provided with substrate, dielectric film Rotating fields and metal grating；
Dielectric film Rotating fields is located at substrate top surface, and dielectric film Rotating fields is provided with at least 2 layers of dielectric thin film layer, every layer of medium
The refractive index of thin layer is different, and metal grating is located at dielectric film Rotating fields upper surface, metal grating be one-dimensional metal grating or
Two-dimensional metallic grating；The metal layer thickness of described metal grating is 20～100nm, the cycle of metal grating be 200～
10000nm, the width of the inner opening part of metal grating is 10～5000nm.
2. as claimed in claim 1 one can the miniature light filter in integrated arrowband, it is characterised in that described substrate is Semiconductor substrate
Or transparent medium substrate；Described Semiconductor substrate is for making the semiconductor base materials of involved photoelectric device；Described transparent
Dielectric substrate is insulator dielectric thin film layer, and described insulator dielectric thin film layer is that silicon oxide, aluminium oxide, silicon nitride or plastics are exhausted
Edge body dielectric thin film layer.
3. as claimed in claim 1 one can the miniature light filter in integrated arrowband, it is characterised in that the gold that described metal grating uses
Belong to material selection gold, silver, copper or aluminum.
4. as claimed in claim 1 one can the miniature light filter in integrated arrowband, it is characterised in that described two-dimensional metallic grating is net
Shape two-dimensional metallic grating or island two-dimensional metallic grating.
5. as claimed in claim 1 one can the miniature light filter in integrated arrowband, it is characterised in that described dielectric film Rotating fields
Dielectric film layer material uses insulating material or semi-conducting material, and insulating material is silicon dioxide, silicon nitride or aluminium oxide；
Semi-conducting material selects silicon, germanium, iii-v or II-VI group compound semiconductor.
6. as claimed in claim 1 one can the miniature light filter in integrated arrowband, it is characterised in that described dielectric film Rotating fields
Gross thickness is 20～2000nm.
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|---|---|---|---|---|
| CN106249333A (en) * | 2016-09-21 | 2016-12-21 | 安徽大学 | A kind of narrow-band band-elimination wave filter |
| CN106249333B (en) * | 2016-09-21 | 2019-06-21 | 安徽大学 | A kind of narrow-band band-elimination filter |
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| Publication number | Publication date |
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| CN104570184A (en) | 2015-04-29 |
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