CN103744198B - Periodicity sub-wave length metal grating wave filter of voltage modulated and preparation method thereof - Google Patents
Periodicity sub-wave length metal grating wave filter of voltage modulated and preparation method thereof Download PDFInfo
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- CN103744198B CN103744198B CN201410037728.1A CN201410037728A CN103744198B CN 103744198 B CN103744198 B CN 103744198B CN 201410037728 A CN201410037728 A CN 201410037728A CN 103744198 B CN103744198 B CN 103744198B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 47
- 239000002184 metal Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 6
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 6
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 6
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 241000208340 Araliaceae Species 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 238000001914 filtration Methods 0.000 abstract description 4
- 238000012856 packing Methods 0.000 abstract 1
- 239000000945 filler Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Periodicity sub-wave length metal grating wave filter that the invention discloses a kind of voltage modulated and preparation method thereof, described wave filter, including two-layer transparent conducting glass, periodically metal grating, photoelectric crystal and electric field generating apparatus, described periodicity metal grating is provided with the slit of cyclic array arrangement;Described photoelectric crystal is filled in the slit of metal grating, described two-layer transparent conducting glass laminating periodically metal grating upper and lower surface is arranged, photoelectric crystal is sealed in the slit being fixed on metal grating, described electric field generating apparatus produces uniform adjustable electric field on two-layer transparent conducting glass, for changing the refractive index parameter of photoelectric crystal.The present invention can change the refractive index characteristic of packing material and the light transmission rate of metal grating by changing the applied voltage of upper and lower transparent conducting glass electrode, reach the purpose of voltage modulated filtering characteristic.
Description
Technical field
Periodicity sub-wave length metal grating wave filter that the present invention relates to a kind of voltage modulated and preparation method thereof, belongs to integrated
Photonic device.
Background technology
Since the abnormal transmission phenomenon of sub-wavelength metal slit grating array is found, due to the optical characteristics of its uniqueness
With increasingly advanced nanofabrication technique, its potential using value is gradually implemented, and one of which is exactly wave filter, logical
Cross the structural parameters such as the design change slit width of slit grating, height and cycle and can obtain the wave filter of different-waveband,
And for the metallic slit grating of fixed structure parameter Yu shape, its filtering characteristic is also fixing, as changed its filtering
Characteristic, then need to design the slit grating of new structural parameters, and this need the photoelectricity of real-time dynamic band regulation for some
It is disadvantageous for system, have impact on Highgrade integration and the multifunction of system.
Summary of the invention
Goal of the invention: immobilize for tradition periodically sub-wave length metal grating wave filter light transmission rate, unadjustable
Problem, present invention periodicity sub-wave length metal grating wave filter that a kind of voltage modulated is provided and preparation method thereof, according to
The filtering characteristic of sub-wavelength period metallic slit grating and the closely-related principle of refractive index of the filler of slit grating,
Filling Electrooptic crystal material in slit, and the refractive index of electro-optic crystal is controlled by the intensity of external electric field, closely make filter
The light transmission rate of ripple device changes with the change of extra electric field, it is achieved filter dynamic adjustable characteristic.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
The periodicity sub-wave length metal grating wave filter of a kind of voltage modulated, including two-layer transparent conducting glass, periodically gold
Belong to grating, photoelectric crystal and electric field generating apparatus, described periodicity metal grating is provided with the narrow of cyclic array arrangement
Seam;Described photoelectric crystal is filled in the slit of metal grating, described two-layer transparent conducting glass laminating periodically metal light
Grid upper and lower surface is arranged, and is sealed by photoelectric crystal in the slit being fixed on metal grating, and described electric field generating apparatus is in two-layer
Uniform adjustable electric field is produced, for changing the refractive index parameter of photoelectric crystal on transparent conducting glass.
Preferably, the thickness of described periodicity metal grating is 100~1000nm, the cycle is 400~1000nm, slit
Width is 100~1000nm, and the thickness of transparent conducting glass is 1~10mm.
Preferably, described transparent conducting glass is specially ITO electro-conductive glass (ITO electro-conductive glass is at sodium calcium base or silicon boron
On the basis of base substrate glass, the method for magnetron sputtering is utilized to plate indium oxide layer tin (being commonly called as ITO) film processing and fabricating
Become).
Preferably, described slit be shaped as rectangle, taper, parabola shaped etc..
Preferably, described photoelectric crystal is potassium dihydrogen phosphate, ammonium dihydrogen phosphate, lithium niobate or lithium tantalate etc..
The preparation method of the periodicity sub-wave length metal grating wave filter of a kind of voltage modulated, including the following step carried out successively
Rapid:
(1) on layer of transparent electro-conductive glass, the thin-film technique such as thermal evaporation or magnetron sputtering is utilized to prepare layer of metal
Film, the thickness of metallic film is a, and the material of metallic film can be that precious metal material can also be for ordinary metallic material;
(2) at the surface spin coating one layer photoetching glue of metallic film and dry, the thickness of photoresist is b;
(3) utilize the etching technics such as focused ion bundle to prepare groove array, form the slit of cyclic array arrangement, recessed
The degree of depth of groove is a+b;
(4) utilize the coating process such as electron beam evaporation in groove array plated surface photoelectric crystal film, the thickness of photoelectric crystal film
Degree is a;
(5) utilize cleaning fluid that the photoresist in structure is washed and dried;
(6) upper surface in structure covers another layer of transparent conducting glass.
Beneficial effect: the periodicity sub-wave length metal grating wave filter of the voltage modulated that the present invention provides, produces when changing electric field
During the voltage strength that generating apparatus produces, owing to the distance between upper/lower electrode is the shortest, huge electric field, electric light will be formed
Crystal refractive index under the effect of electric field changes, owing to the light transmission rate of grating ceases with the refractive index of slit filler
Manner of breathing closes, so the voltage changing upper/lower electrode can modulate the light transmission rate of slit grating, to reach dynamic filter
Purpose, this dynamic adjustable wave filter, can be used to prepare novel photoswitch, optical modulator etc., by following collection
Become in photonic device and optical communication and be widely used;The periodicity sub-wave length metal grating of the voltage modulated that the present invention provides
Wave filter preparation method, process is simple, be easily achieved.
Accompanying drawing explanation
Fig. 1 is the perspective view of wave filter of the present invention;
Fig. 2 is the sectional structure schematic diagram of wave filter of the present invention;
Fig. 3 is the preparation process of wave filter of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is further described.
It is the periodicity sub-wave length metal grating wave filter of a kind of voltage modulated as shown in Figure 1 and Figure 2, transparent including two-layer
Electro-conductive glass 1, periodically metal grating 2, photoelectric crystal 3 and electric field generating apparatus 4, described periodicity metal grating 2
On be provided with cyclic array arrangement slit;Described photoelectric crystal 3 is filled in the slit of metal grating 2, and described two
Layer transparent conducting glass 1 laminating periodically metal grating 2 upper and lower surface is arranged, and is sealed by photoelectric crystal 3 and is fixed on metal
In the slit of grating 2, described electric field generating apparatus 4 produces uniform adjustable electric field on two-layer transparent conducting glass 1,
For changing the refractive index parameter of photoelectric crystal 3.
The thickness of general described periodicity metal grating 2 is 100~1000nm, the cycle is 400~1000nm, the width of slit
Degree is 100~1000nm, and the thickness of transparent conducting glass 1 is 1~10mm.
Described transparent conducting glass 1 specially ITO electro-conductive glass ITO electro-conductive glass is at sodium calcium base or silicon boryl substrate
On the basis of glass, utilize the method for magnetron sputtering to plate indium oxide layer tin and be commonly called as what ito film manufactured;Described
Slit be shaped as rectangle, taper, parabola shaped etc.;Described photoelectric crystal 3 be potassium dihydrogen phosphate, ammonium dihydrogen phosphate,
Lithium niobate or lithium tantalate etc..
It is illustrated in figure 3 the preparation method of the periodicity sub-wave length metal grating wave filter of a kind of voltage modulated, including successively
The following steps carried out:
(1) on layer of transparent electro-conductive glass, the thin-film technique such as thermal evaporation or magnetron sputtering is utilized to prepare layer of metal
Film, the thickness of metallic film is a, and the material of metallic film can be that precious metal material can also be for ordinary metallic material;
(2) at the surface spin coating one layer photoetching glue of metallic film and dry, the thickness of photoresist is b;
(3) utilize the etching technics such as focused ion bundle to prepare groove array, form the slit of cyclic array arrangement, recessed
The degree of depth of groove is a+b;
(4) utilize the coating process such as electron beam evaporation in groove array plated surface photoelectric crystal film, the thickness of photoelectric crystal film
Degree is a;
(5) utilize cleaning fluid that the photoresist in structure is washed and dried;
(6) upper surface in structure covers another layer of transparent conducting glass.
Below in conjunction with embodiment, the present invention is made further instructions.
Embodiment 1
For realizing a kind of periodically sub-wave length metal grating wave filter, selection potassium dihydrogen phosphate is filler.Select ITO saturating
Bright glass, as substrate, utilizes thermal evaporation to prepare, on its surface, the gold thin film that a layer thickness is 300nm, on gold thin film surface
Spin coating a layer thickness is the photoresist of 200nm and dries.Utilizing focused ion beam technology one degree of depth of etching is 500nm,
Width is 200nm, and the cycle is the periodic rectangular groove array of 500nm, then deposited by electron beam evaporation is at groove array table
The potassium dihydrogen phosphate of a layer thickness 300nm is plated in face, then utilizes cleaning fluid to be washed by the photoresist in structure, dries,
Finally cover ito transparent electrode at upper surface.And upper/lower electrode is connected to voltage generation circuit.
Incident light is incident by ito transparent electrode below wave filter, and due to the abnormal transmission phenomenon of nano slit grating, light will
Through slit grating by upper surface outgoing.Owing to grating transmission spectrum is relevant with the refractive index of slit filler, outside changing
Alive size, changes the refractive index of potassium dihydrogen phosphate, is finally reached the purpose dynamically changing grating transmitance spectral line.
Embodiment 2
For realizing a kind of periodically sub-wave length metal grating wave filter, select lithium tantalate as grating slit filler, select
Transparent glass, as substrate, utilizes magnetron sputtering to prepare, on its surface, the Ag films that a layer thickness is 250nm, at silver
Film surface spin coating a layer thickness is the photoresist of 150nm and dries.Utilize focused ion beam technology etching one degree of depth be
400nm, width is 250nm, and the cycle is the periodic rectangular groove array of 400nm, then deposited by electron beam evaporation is at groove
Array surface plates the lithium tantalate of a layer thickness 250nm, then utilizes cleaning fluid to be washed by the photoresist in structure, dries,
Finally cover ito transparent electrode at upper surface.And upper/lower electrode is connected to voltage generation circuit.
Incident light is incident by ito transparent electrode below wave filter, and due to the abnormal transmission phenomenon of nano slit grating, light will
Through slit grating by upper surface outgoing.Owing to transmission spectrum is relevant with the refractive index of slit filler, by changing outer powering up
The size of pressure, changes the refractive index of lithium tantalate, is finally reached the purpose dynamically changing grating transmitance spectral line.
The above is only the preferred embodiment of the present invention, it should be pointed out that: for those skilled in the art
For, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications are also
Should be regarded as protection scope of the present invention.
Claims (6)
1. the periodicity sub-wave length metal grating wave filter of a voltage modulated, it is characterised in that: include that two-layer is transparent and lead
Electricity glass (1), periodically metal grating (2), photoelectric crystal (3) and electric field generating apparatus (4), described periodicity
The slit of cyclic array arrangement it is provided with on metal grating (2);Described photoelectric crystal (3) is filled in metal grating (2)
Slit in, described two-layer transparent conducting glass (1) laminating periodically metal grating (2) upper and lower surface is arranged, by light
Electric crystal (3) seals and is fixed in the slit of metal grating (2), and due to photoelectric crystal (3), to be clamped in two-layer transparent
Between electro-conductive glass (1), when electric field generating apparatus (4) applies voltages to two-layer transparent conducting glass (1),
Produce uniform adjustable electric field between two-layer transparent conducting glass (1), thus change the refractive index ginseng of photoelectric crystal (3)
Number.
The periodicity sub-wave length metal grating wave filter of voltage modulated the most according to claim 1, it is characterised in that:
The thickness of described periodicity metal grating (2) is 100~1000nm, the cycle is 400~1000nm, and the width of slit is
100~1000nm, the thickness of transparent conducting glass (1) is 1~10mm.
The periodicity sub-wave length metal grating wave filter of voltage modulated the most according to claim 1, it is characterised in that:
Described transparent conducting glass (1) is specially ITO electro-conductive glass.
The periodicity sub-wave length metal grating wave filter of voltage modulated the most according to claim 1, it is characterised in that:
Described slit be shaped as rectangle, taper, parabola shaped.
The periodicity sub-wave length metal grating wave filter of voltage modulated the most according to claim 1, it is characterised in that:
Described photoelectric crystal (3) is potassium dihydrogen phosphate, ammonium dihydrogen phosphate, lithium niobate or lithium tantalate.
6. the preparation method of the periodicity sub-wave length metal grating wave filter of a voltage modulated, it is characterised in that: include
The following steps carried out successively:
(1) on layer of transparent electro-conductive glass, thin-film technique is utilized to prepare layer of metal film, the thickness of metallic film
For a;
(2) at the surface spin coating one layer photoetching glue of metallic film and dry, the thickness of photoresist is b;
(3) utilizing etching technics to prepare groove array, form the slit of cyclic array arrangement, the degree of depth of groove is a+b;
(4) utilizing coating process is a at groove array plated surface photoelectric crystal film, the thickness of photoelectric crystal film;
(5) utilize cleaning fluid that the photoresist in structure is washed and dried;
(6) upper surface in structure covers another layer of transparent conducting glass.
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CN106526948A (en) | 2016-11-09 | 2017-03-22 | 惠科股份有限公司 | Mask for display panel manufacturing process |
CN106597696A (en) * | 2016-12-12 | 2017-04-26 | 天津理工大学 | Wavelength-tunable narrow-band filter based on lithium niobate waveguide grating |
US20190275565A1 (en) * | 2018-03-06 | 2019-09-12 | GM Global Technology Operations LLC | Method of selectively removing a contaminant from an optical component |
CN109270626B (en) * | 2018-11-28 | 2020-05-26 | 南京邮电大学 | Adjustable grating filter based on SOI wafer and preparation method |
CN109683338A (en) * | 2019-02-21 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of light field display device and method |
CN112595700A (en) * | 2020-12-08 | 2021-04-02 | 南方科技大学 | Method for detecting alignment orientation of liquid crystal |
CN115793342B (en) * | 2022-12-07 | 2024-03-26 | 西北工业大学宁波研究院 | All-solid-state multichannel dynamic adjustable spectrum filter device and preparation method thereof |
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CN101261345A (en) * | 2008-04-09 | 2008-09-10 | 厦门大学 | Array type microresonant cavity tunable integrated optical filter |
CN102798918A (en) * | 2011-05-25 | 2012-11-28 | 苏州大学 | Reflecting color filter |
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