CN203551828U

CN203551828U - Astronomical optical filter with 3600-4000 nm pass band for observing graphic spectrums

Info

Publication number: CN203551828U
Application number: CN201320777909.9U
Authority: CN
Inventors: 吕晶; 胡伟琴; 王继平
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Multi Ir Technology Co ltd
Priority date: 2013-11-29
Filing date: 2013-11-29
Publication date: 2014-04-16
Anticipated expiration: 2023-11-29

Abstract

The utility model refers to an astronomical optical filter with a 3600-4000 nm pass band for observing graphic spectrums, which has high signal to noise ratio and good stability and can effectively raise object temperature measurement distinguishing capability and detection precision use requirements. The astronomical optical filter comprises a substrate with Si as a raw material, a first coating film layer of Ge and SiO and a second coating film layer of G e and SiO; the substrate is located between the first coating film layer and the second coating film layer. According to the design, the astronomical optical filter has good stability and is suitable for object temperature induction and measurement; the optical filter has a wavelength range of 3600-4000 nm and the Tavg is no less than 85%; a wavelength range is 1500-3400 nm and 4200-6500 nm and the Tavg is smaller than 0.5%; the signal to noise ratio is substantially raised. When used for object temperature measurement and induction, the astronomical optical filter can effectively raise distinguishing capability and detection precision and better meet use requirements in reality.

Description

The astronomical optical filter of the observation figure spectrum that is 3600-4000nm by band

Technical field

The utility model relates to infrared fileter field, especially a kind of astronomical optical filter of observation figure spectrum that is 3600-4000nm by band.

Background technology

Infrared fileter filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object easily, and namely infrared ray can not reflect when through object.Utilize ultrared this characteristic, only allow long wavelength's infrared ray pass through, filtering short wavelength's ultraviolet ray and visible ray.Be applied to a lot of fields, in the induction and measuring process for object temperature, select suitable wavelength coverage most important at present.And existing long-pass infrared fileter in use exists, thermometric is unstable, not high of degree of accuracy, and particularly the signal to noise ratio (S/N ratio) of transmitance and cut-off region is not high, can not meet high-precision measurement requirement.

Utility model content

The purpose of this utility model is the deficiency in order to solve above-mentioned technology and provide that a kind of signal to noise ratio (S/N ratio) is high, good stability, effectively improve the observation figure spectrum astronomy optical filter that is 3600-4000nm by band that object temperature is measured resolution characteristic and accuracy of detection request for utilization.

In order to achieve the above object, the astronomical optical filter of the observation figure spectrum that is 3600-4000nm by band that the utility model is designed, comprises take Si as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the SiO layer of 355nm thickness, the Ge layer of 138nm thickness, the SiO layer of 261nm thickness, the Ge layer of 151nm thickness, the SiO layer of 405nm thickness, the Ge layer of 178nm thickness, the SiO layer of 406nm thickness, the Ge layer of 154nm thickness, the SiO layer of 266nm thickness, the Ge layer of 143nm thickness, the SiO layer of 404nm thickness, the Ge layer of 193nm thickness, the SiO layer of 702nm thickness, the Ge layer of 416nm thickness, the SiO layer of 638nm thickness, the Ge layer of 231nm thickness, the SiO layer of 722nm thickness, the Ge layer of 401nm thickness, the SiO layer of 586nm thickness, the Ge layer of 257nm thickness, the SiO layer of 898nm thickness, the Ge layer of 310nm thickness and the SiO layer of 352nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the SiO layer of 136nm thickness, the Ge layer of 83nm thickness, the SiO layer of 181nm thickness, the Ge layer of 55nm thickness, the SiO layer of 198nm thickness, the Ge layer of 86nm thickness, the SiO layer of 184nm thickness, the Ge layer of 81nm thickness, the SiO layer of 222nm thickness, the Ge layer of 94nm thickness, the SiO layer of 334nm thickness, the Ge layer of 86nm thickness, the SiO layer of 291nm thickness, the Ge layer of 139nm thickness, the SiO layer of 164nm thickness, the Ge layer of 148nm thickness and the SiO layer of 595nm thickness.

Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.

The astronomical optical filter of the observation figure spectrum that is 3600-4000nm by band that the utility model obtains, by above-mentioned design, has realized good stability, and can be applicable to temperature sense and the measurement of object, this optical filter 3600～4000nm, Tavg >=85%; 1500～3400nm, 4200～6500nm Tavg<0.5%, improved signal to noise ratio (S/N ratio) greatly, when the measurement for object temperature and induction, can effectively improve resolution characteristic and accuracy of detection, better meets the request for utilization in reality.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram;

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1:

As Fig. 1, shown in Fig. 2, the astronomical optical filter of the observation figure spectrum that is 3600-4000nm by band that the present embodiment is described, comprises take Si as raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the SiO layer of 355nm thickness, the Ge layer of 138nm thickness, the SiO layer of 261nm thickness, the Ge layer of 151nm thickness, the SiO layer of 405nm thickness, the Ge layer of 178nm thickness, the SiO layer of 406nm thickness, the Ge layer of 154nm thickness, the SiO layer of 266nm thickness, the Ge layer of 143nm thickness, the SiO layer of 404nm thickness, the Ge layer of 193nm thickness, the SiO layer of 702nm thickness, the Ge layer of 416nm thickness, the SiO layer of 638nm thickness, the Ge layer of 231nm thickness, the SiO layer of 722nm thickness, the Ge layer of 401nm thickness, the SiO layer of 586nm thickness, the Ge layer of 257nm thickness, the SiO layer of 898nm thickness, the Ge layer of 310nm thickness and the SiO layer of 352nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the SiO layer of 136nm thickness, the Ge layer of 83nm thickness, the SiO layer of 181nm thickness, the Ge layer of 55nm thickness, the SiO layer of 198nm thickness, the Ge layer of 86nm thickness, the SiO layer of 184nm thickness, the Ge layer of 81nm thickness, the SiO layer of 222nm thickness, the Ge layer of 94nm thickness, the SiO layer of 334nm thickness, the Ge layer of 86nm thickness, the SiO layer of 291nm thickness, the Ge layer of 139nm thickness, the SiO layer of 164nm thickness, the Ge layer of 148nm thickness and the SiO layer of 595nm thickness.

Claims

1. the astronomical optical filter of the observation figure spectrum that is 3600-4000nm by band, comprises take Si as raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the SiO layer of 355nm thickness, the Ge layer of 138nm thickness, the SiO layer of 261nm thickness, the Ge layer of 151nm thickness, the SiO layer of 405nm thickness, the Ge layer of 178nm thickness, the SiO layer of 406nm thickness, the Ge layer of 154nm thickness, the SiO layer of 266nm thickness, the Ge layer of 143nm thickness, the SiO layer of 404nm thickness, the Ge layer of 193nm thickness, the SiO layer of 702nm thickness, the Ge layer of 416nm thickness, the SiO layer of 638nm thickness, the Ge layer of 231nm thickness, the SiO layer of 722nm thickness, the Ge layer of 401nm thickness, the SiO layer of 586nm thickness, the Ge layer of 257nm thickness, the SiO layer of 898nm thickness, the Ge layer of 310nm thickness and the SiO layer of 352nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the SiO layer of 136nm thickness, the Ge layer of 83nm thickness, the SiO layer of 181nm thickness, the Ge layer of 55nm thickness, the SiO layer of 198nm thickness, the Ge layer of 86nm thickness, the SiO layer of 184nm thickness, the Ge layer of 81nm thickness, the SiO layer of 222nm thickness, the Ge layer of 94nm thickness, the SiO layer of 334nm thickness, the Ge layer of 86nm thickness, the SiO layer of 291nm thickness, the Ge layer of 139nm thickness, the SiO layer of 164nm thickness, the Ge layer of 148nm thickness and the SiO layer of 595nm thickness.