CN202275176U

CN202275176U - 3900-nanometer band-pass infrared optical filter

Info

Publication number: CN202275176U
Application number: CN2012200912973U
Authority: CN
Inventors: 吕晶
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: Hangzhou Mai peak Polytron Technologies Inc
Priority date: 2012-03-12
Filing date: 2012-03-12
Publication date: 2012-06-13
Anticipated expiration: 2022-03-12

Abstract

The utility model discloses a 3900-nanometer band-pass infrared optical filter, which comprises a substrate with Si as a raw material, a first coating film layer with Ge and SiO as coating film materials and a second coating film layer with Ge and SiO as coating film materials. The substrate is arranged between the first coating film layer and the second coating film layer. The first coating film layer includes 29 layers of coating film material SiO layers and Ge layers with the different or same thickness, and the 29 layers of coating film material SiO layers and Ge layers are sequentially arranged from the inside to the outside. The second coating film layer includes 13 layers of coating film material SiO layers and Ge layers with the different or same thickness, and the 13 layers of coating film material SiO layers and Ge layers are sequentially arranged from the inside to the outside. The 3900-nanometer band-pass infrared optical filter can enable central wavelength location to be 3900+/-1% nanometers, peak transmittance to be more than 90% and transmittance of cut-off regions to be smaller than 0.1%, thereby greatly improving signal to noise ratio and providing basic guarantee for accurate measurement of gas requiring measured.

Description

The aglow outer optical filter of 3900 nano belt

Technical field

The utility model relates to a kind of optical filter, particularly the aglow outer optical filter of 3900 nano belt.

Background technology

3900 nanometer infrared bands are wave bands that few in number almost not having absorbs in the atmospheric window.So aglow outer optical filter of 3900 nano belt; Be mainly used in the gas test process as benchmark, with the actual concentrations of gas that accurate measurements and calculations are surveyed, but often signal to noise ratio (S/N ratio) is low for the aglow outer optical filter of 3900 nano belt in the market; Low precision can not satisfy the needs of market development.

The utility model content

The purpose of the utility model is to provide a kind of peak transmittance high for the deficiency that solves above-mentioned prior art, can improve the aglow outer optical filter of 3900 nano belt of signal to noise ratio (S/N ratio) greatly.

To achieve these goals; The aglow outer optical filter of 3900 nano belt that the utility model designed; Comprise with Si and be raw-material substrate, be the first filming layer of Coating Materials and be second coatings of Coating Materials with Ge, SiO with Ge, SiO; Substrate is characterized in that the first filming layer comprises the SiO layer that is arranged in order 142nm thickness from inside to outside, the Ge layer of 117nm thickness, the SiO layer of 540nm thickness, the Ge layer of 64nm thickness, the SiO layer of 343nm thickness, the Ge layer of 115nm thickness, the SiO layer of 125nm thickness, the Ge layer of 142nm thickness, the SiO layer of 227nm thickness, the Ge layer of 225nm thickness, the SiO layer of 360nm thickness, the Ge layer of 87nm thickness, the SiO layer of 395nm thickness, the Ge layer of 262nm thickness, the SiO layer of 348nm thickness, the Ge layer of 124nm thickness, the SiO layer of 314nm thickness, the Ge layer of 116nm thickness, the SiO layer of 575nm thickness, the Ge layer of 416nm thickness, the SiO layer of 785nm thickness, the Ge layer of 388nm thickness, the SiO layer of 944nm thickness, the Ge layer of 430nm thickness, the SiO layer of 855nm thickness, the Ge layer of 385nm thickness, the SiO layer of 954nm thickness, the Ge layer of 519nm thickness, the SiO layer of 589nm thickness between the first filming layer and second coatings; Second coatings comprises the SiO layer of the 547nm thickness that is arranged in order from inside to outside, the Ge layer of 236nm thickness, the SiO layer of 2188nm thickness, the Ge layer of 236nm thickness, the SiO layer of 547nm thickness, the Ge layer of 236nm thickness, the SiO layer of 547nm thickness, the Ge layer of 236nm thickness, the SiO layer of 2188nm thickness, the Ge layer of 236nm thickness, the SiO layer of 441nm thickness, the Ge layer of 312nm thickness, the SiO layer of 405nm thickness.

The corresponding thickness of above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Usually the tolerance of thickness is about 10nm.

The aglow outer optical filter of 3900 nano belt that the utility model obtains; Can realize that centre wavelength orientates 3900 ± 1% nanometers as, peak transmittance reaches more than 90%, and the cut-off region transmitance is less than 0.1%; Improved signal to noise ratio (S/N ratio) greatly, for the gas of accurately measuring required measurement provides basic assurance.

Description of drawings

Fig. 1 is an embodiment one-piece construction synoptic diagram;

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

Among the figure: the first filming layer 1, substrate 2, second coatings 3.

Embodiment

Below in conjunction with accompanying drawing and embodiment the utility model is further specified.

Embodiment:

As shown in Figure 1; The aglow outer optical filter of 3900 nano belt that present embodiment provides; Comprise with Si and be raw-material substrate 2, be the first filming layer 1 of Coating Materials and be second coatings 3 of Coating Materials with Ge, SiO with Ge, SiO; Substrate 2 is between the first filming layer 1 and second coatings 3, and the first filming layer 1 comprises the SiO layer that is arranged in order 142nm thickness from inside to outside, the Ge layer of 117nm thickness, the SiO layer of 540nm thickness, the Ge layer of 64nm thickness, the SiO layer of 343nm thickness, the Ge layer of 115nm thickness, the SiO layer of 125nm thickness, the Ge layer of 142nm thickness, the SiO layer of 227nm thickness, the Ge layer of 225nm thickness, the SiO layer of 360nm thickness, the Ge layer of 87nm thickness, the SiO layer of 395nm thickness, the Ge layer of 262nm thickness, the SiO layer of 348nm thickness, the Ge layer of 124nm thickness, the SiO layer of 314nm thickness, the Ge layer of 116nm thickness, the SiO layer of 575nm thickness, the Ge layer of 416nm thickness, the SiO layer of 785nm thickness, the Ge layer of 388nm thickness, the SiO layer of 944nm thickness, the Ge layer of 430nm thickness, the SiO layer of 855nm thickness, the Ge layer of 385nm thickness, the SiO layer of 954nm thickness, the Ge layer of 519nm thickness, the SiO layer of 589nm thickness; Second coatings comprises the SiO layer of the 547nm thickness that is arranged in order from inside to outside, the Ge layer of 236nm thickness, the SiO layer of 2188nm thickness, the Ge layer of 236nm thickness, the SiO layer of 547nm thickness, the Ge layer of 236nm thickness, the SiO layer of 547nm thickness, the Ge layer of 236nm thickness, the SiO layer of 2188nm thickness, the Ge layer of 236nm thickness, the SiO layer of 441nm thickness, the Ge layer of 312nm thickness, the SiO layer of 405nm thickness.

As shown in Figure 2, the aglow outer optical filter of 3900 nano belt that present embodiment obtains can realize that centre wavelength orientates 3900 ± 1% nanometers as, and peak transmittance reaches more than 90%, and the cut-off region transmitance is less than 0.1%.

Claims

1. aglow outer optical filter of nano belt; Comprise with Si and be raw-material substrate (2), be the first filming layer (1) of Coating Materials and be second coatings (3) of Coating Materials with Ge, SiO with Ge, SiO; Substrate (2) is positioned between the first filming layer (1) and second coatings (3), it is characterized in that the first filming layer (1) comprises the SiO layer that is arranged in order 142nm thickness from inside to outside, the Ge layer of 117nm thickness, the SiO layer of 540nm thickness, the Ge layer of 64nm thickness, the SiO layer of 343nm thickness, the Ge layer of 115nm thickness, the SiO layer of 125nm thickness, the Ge layer of 142nm thickness, the SiO layer of 227nm thickness, the Ge layer of 225nm thickness, the SiO layer of 360nm thickness, the Ge layer of 87nm thickness, the SiO layer of 395nm thickness, the Ge layer of 262nm thickness, the SiO layer of 348nm thickness, the Ge layer of 124nm thickness, the SiO layer of 314nm thickness, the Ge layer of 116nm thickness, the SiO layer of 575nm thickness, the Ge layer of 416nm thickness, the SiO layer of 785nm thickness, the Ge layer of 388nm thickness, the SiO layer of 944nm thickness, the Ge layer of 430nm thickness, the SiO layer of 855nm thickness, the Ge layer of 385nm thickness, the SiO layer of 954nm thickness, the Ge layer of 519nm thickness, the SiO layer of 589nm thickness; Second coatings (3) comprises the SiO layer of the 547nm thickness that is arranged in order from inside to outside, the Ge layer of 236nm thickness, the SiO layer of 2188nm thickness, the Ge layer of 236nm thickness, the SiO layer of 547nm thickness, the Ge layer of 236nm thickness, the SiO layer of 547nm thickness, the Ge layer of 236nm thickness, the SiO layer of 2188nm thickness, the Ge layer of 236nm thickness, the SiO layer of 441nm thickness, the Ge layer of 312nm thickness, the SiO layer of 405nm thickness.