CN202275172U - 8000-14000 nanometer band-pass infrared filter - Google Patents
8000-14000 nanometer band-pass infrared filter Download PDFInfo
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- CN202275172U CN202275172U CN2012200907744U CN201220090774U CN202275172U CN 202275172 U CN202275172 U CN 202275172U CN 2012200907744 U CN2012200907744 U CN 2012200907744U CN 201220090774 U CN201220090774 U CN 201220090774U CN 202275172 U CN202275172 U CN 202275172U
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Abstract
The utility model discloses a 8000-14000 nanometer band-pass infrared filter. The band-pass infrared filter comprises a baseplate made of a Ge material and a first coating and a second coating, wherein the first coating and the second coating layer are respectively positioned on the two sides of the baseplate, and the first coating comprises a ZnS layer and a Ge layer which are successively arranged at an interval from inside to outside and are different in thickness; and the second coating comprises a ZnS layer and a Ge layer which are successively arranged at an interval from inside to outside and are different in thickness. The 8000-14000 nanometer band-pass infrared filter obtained by the utility model has the advantages that the baseplate made of the Ge material is matched with the coatings the surfaces of which are made of a ZnS material and the Ge material, the central wavelength positioned at 8000+/-1% to 14000+/-1% nanometers can be realized, peak transmittance reaches more than 90%, and the cut-off region transmittance is less than 0.1%;the signal noise ratio is greatly improved; and the 8000-14000 nanometer band-pass infrared filter can be matched with an infrared imaging device for use, thus the imaging result of the infrared imaging device is promoted.
Description
Technical field
The utility model relates to a kind of infrared thermography assembly, particularly 8000 to 14000 nano belt aglow outside optical filter.
Background technology
Infrared thermography (thermal imaging system or infrared thermography) is to survey infrared energy (heat) through noncontact, and is converted into electric signal, and then on display, generates heat picture and temperature value, and a kind of checkout equipment that can calculate temperature value.Infrared thermography (thermal imaging system or infrared thermography) can be with the heat precise quantification that detects, or measures, and makes you not only can observe heat picture, can also accurately discern with strict the fault zone of heating and analyze.
The detector of infrared thermography is the key that realizes infrared energy (heat energy) switching electrical signals; Because the infrared energy (heat) that various biology sent is different; So in daily use in order to observe the heat picture of certain particular organisms; People tend in detector, add infrared fileter, can make photodetector only accept the infrared energy of specific band through infrared fileter, guarantee the imaging results of infrared thermography.
Present optical filter outside 8000 to 14000 nano belt that are used for people's volume imaging are aglow, often signal to noise ratio (S/N ratio) is low, and low precision can not satisfy the needs of market development.
The utility model content
The purpose of the utility model is to provide a kind of peak transmittance high for the deficiency that solves above-mentioned prior art, can improve greatly 8000 to 14000 nano belt of signal to noise ratio (S/N ratio) aglow outside optical filter.
To achieve these goals; Optical filter outside 8000 to 14000 nano belt that the utility model designed are aglow; Comprise that composition is the substrate of Ge and the first filming layer that lays respectively at the substrate two sides and second coatings, it is characterized in that said the first filming layer comprises the ZnS layer that Ge layer that the thickness that from inside to outside is arranged in order is 210 nanometers, ZnS layer that thickness is 261 nanometers, Ge layer that thickness is 233 nanometers, ZnS layer that thickness is 301 nanometers, Ge layer that thickness is 112 nanometers, ZnS layer that thickness is 187 nanometers, Ge layer that thickness is 85 nanometers, ZnS layer that thickness is 279 nanometers, Ge layer that thickness is 136 nanometers, ZnS layer that thickness is 333 nanometers, Ge layer that thickness is 191 nanometers, ZnS layer that thickness is 268 nanometers, Ge layer that thickness is 139 nanometers, ZnS layer that thickness is 238 nanometers, Ge layer that thickness is 238 nanometers, ZnS layer that thickness is 338 nanometers, Ge layer that thickness is 207 nanometers, ZnS layer that thickness is 423 nanometers, Ge layer that thickness is 192 nanometers, ZnS layer that thickness is 253 nanometers, Ge layer that thickness is 192 nanometers, ZnS layer that thickness is 390 nanometers, Ge layer that thickness is 347 nanometers, ZnS layer that thickness is 312 nanometers, Ge layer that thickness is 268 nanometers, ZnS layer that thickness is 382 nanometers, Ge layer that thickness is 335 nanometers, ZnS layer that thickness is 357 nanometers, Ge layer that thickness is 303 nanometers, ZnS layer that thickness is 314 nanometers, Ge layer that thickness is 320 nanometers, ZnS layer that thickness is 758 nanometers, Ge layer that thickness is 166 nanometers, ZnS layer that thickness is 806 nanometers, Ge layer that thickness is 108 nanometers, ZnS layer that thickness is 555 nanometers, Ge layer that thickness is 318 nanometers, ZnS layer that thickness is 653 nanometers, Ge layer that thickness is 366 nanometers, ZnS layer that thickness is 746 nanometers, Ge layer that thickness is 405 nanometers, ZnS layer that thickness is 707 nanometers, Ge layer that thickness is 332 nanometers, ZnS layer that thickness is 834 nanometers, Ge layer that thickness is 441 nanometers, ZnS layer that thickness is 437 nanometers, Ge layer that thickness is 407 nanometers, ZnS layer that thickness is 451 nanometers, Ge layer that thickness is 560 nanometers and thickness are 473 nanometers; Said second coatings comprises the Ge layer that the thickness that from inside to outside is arranged in order is 272 nanometers; Thickness is the ZnS layer of 282 nanometers; Thickness is the Ge layer of 1331 nanometers; Thickness is the ZnS layer of 2187 nanometers; Thickness is the Ge layer of 1077 nanometers; Thickness is the ZnS layer of 1964 nanometers; Thickness is the Ge layer of 1039 nanometers; Thickness is the ZnS layer of 1972 nanometers; Thickness is the Ge layer of 1027 nanometers; Thickness is the ZnS layer of 2012 nanometers; Thickness is the Ge layer of 1039 nanometers; Thickness is the ZnS layer of 2046 nanometers; Thickness is the Ge layer of 1070 nanometers; Thickness is the ZnS layer of 503 nanometers; Thickness is the Ge layer of 450 nanometers and the ZnS layer that thickness is 290 nanometers.
The corresponding thickness of above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Usually the tolerance of thickness is about 10nm.
Optical filter outside 8000 to 14000 nano belt that the utility model obtains are aglow; The substrate matching surface ZnS of its Ge material, the coatings of Ge material realize that centre wavelength is positioned at 8000 ± 1% to 14000 ± 1% nanometers, and peak transmittance reaches more than 90%; The cut-off region transmitance is less than 0.1%; Improve signal to noise ratio (S/N ratio) greatly, cooperated infrared thermography to use, promoted the imaging results of infrared thermography.
Description of drawings
Fig. 1 is the structural representation of embodiment 1;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Among the figure: substrate 1, the first filming layer 11, second coatings 12.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Embodiment 1:
As shown in Figure 1; Optical filter outside 8000 to 14000 nano belt that present embodiment provides are aglow; Comprise that composition is the substrate 1 of Ge and the first filming layer 11 that lays respectively at the substrate two sides and second coatings 12, said the first filming layer 11 comprises the ZnS layer that Ge layer that the thickness that from inside to outside is arranged in order is 210 nanometers, ZnS layer that thickness is 261 nanometers, Ge layer that thickness is 233 nanometers, ZnS layer that thickness is 301 nanometers, Ge layer that thickness is 112 nanometers, ZnS layer that thickness is 187 nanometers, Ge layer that thickness is 85 nanometers, ZnS layer that thickness is 279 nanometers, Ge layer that thickness is 136 nanometers, ZnS layer that thickness is 333 nanometers, Ge layer that thickness is 191 nanometers, ZnS layer that thickness is 268 nanometers, Ge layer that thickness is 139 nanometers, ZnS layer that thickness is 238 nanometers, Ge layer that thickness is 238 nanometers, ZnS layer that thickness is 338 nanometers, Ge layer that thickness is 207 nanometers, ZnS layer that thickness is 423 nanometers, Ge layer that thickness is 192 nanometers, ZnS layer that thickness is 253 nanometers, Ge layer that thickness is 192 nanometers, ZnS layer that thickness is 390 nanometers, Ge layer that thickness is 347 nanometers, ZnS layer that thickness is 312 nanometers, Ge layer that thickness is 268 nanometers, ZnS layer that thickness is 382 nanometers, Ge layer that thickness is 335 nanometers, ZnS layer that thickness is 357 nanometers, Ge layer that thickness is 303 nanometers, ZnS layer that thickness is 314 nanometers, Ge layer that thickness is 320 nanometers, ZnS layer that thickness is 758 nanometers, Ge layer that thickness is 166 nanometers, ZnS layer that thickness is 806 nanometers, Ge layer that thickness is 108 nanometers, ZnS layer that thickness is 555 nanometers, Ge layer that thickness is 318 nanometers, ZnS layer that thickness is 653 nanometers, Ge layer that thickness is 366 nanometers, ZnS layer that thickness is 746 nanometers, Ge layer that thickness is 405 nanometers, ZnS layer that thickness is 707 nanometers, Ge layer that thickness is 332 nanometers, ZnS layer that thickness is 834 nanometers, Ge layer that thickness is 441 nanometers, ZnS layer that thickness is 437 nanometers, Ge layer that thickness is 407 nanometers, ZnS layer that thickness is 451 nanometers, Ge layer that thickness is 560 nanometers and thickness are 473 nanometers; Said second coatings 12 comprises the Ge layer that the thickness that from inside to outside is arranged in order is 272 nanometers; Thickness is the ZnS layer of 282 nanometers; Thickness is the Ge layer of 1331 nanometers; Thickness is the ZnS layer of 2187 nanometers; Thickness is the Ge layer of 1077 nanometers; Thickness is the ZnS layer of 1964 nanometers; Thickness is the Ge layer of 1039 nanometers; Thickness is the ZnS layer of 1972 nanometers; Thickness is the Ge layer of 1027 nanometers; Thickness is the ZnS layer of 2012 nanometers; Thickness is the Ge layer of 1039 nanometers; Thickness is the ZnS layer of 2046 nanometers; Thickness is the Ge layer of 1070 nanometers; Thickness is the ZnS layer of 503 nanometers; Thickness is the Ge layer of 450 nanometers and the ZnS layer that thickness is 290 nanometers.
Silicon monoxide germanium (Ge) in above-mentioned and zinc sulphide (ZnS) material are the material that can directly buy in the existing market all, so seldom be described in detail at this.
As shown in Figure 2; Optical filter outside 8000 to 14000 nano belt that present embodiment obtains are aglow can realize that centre wavelength orientates 8000 ± 1% to 14000 ± 1% nanometers as, and peak transmittance reaches more than 90%; The cut-off region transmitance has greatly improved signal to noise ratio (S/N ratio) less than 0.1%.
Claims (1)
1. optical filter outside 14000 nano belt are aglow; Comprise that composition is the substrate (1) of Ge and the first filming layer (11) and second coatings (12) that lays respectively at the substrate two sides, it is characterized in that said the first filming layer (11) comprises the ZnS layer that Ge layer that the thickness that from inside to outside is arranged in order is 210 nanometers, ZnS layer that thickness is 261 nanometers, Ge layer that thickness is 233 nanometers, ZnS layer that thickness is 301 nanometers, Ge layer that thickness is 112 nanometers, ZnS layer that thickness is 187 nanometers, Ge layer that thickness is 85 nanometers, ZnS layer that thickness is 279 nanometers, Ge layer that thickness is 136 nanometers, ZnS layer that thickness is 333 nanometers, Ge layer that thickness is 191 nanometers, ZnS layer that thickness is 268 nanometers, Ge layer that thickness is 139 nanometers, ZnS layer that thickness is 238 nanometers, Ge layer that thickness is 238 nanometers, ZnS layer that thickness is 338 nanometers, Ge layer that thickness is 207 nanometers, ZnS layer that thickness is 423 nanometers, Ge layer that thickness is 192 nanometers, ZnS layer that thickness is 253 nanometers, Ge layer that thickness is 192 nanometers, ZnS layer that thickness is 390 nanometers, Ge layer that thickness is 347 nanometers, ZnS layer that thickness is 312 nanometers, Ge layer that thickness is 268 nanometers, ZnS layer that thickness is 382 nanometers, Ge layer that thickness is 335 nanometers, ZnS layer that thickness is 357 nanometers, Ge layer that thickness is 303 nanometers, ZnS layer that thickness is 314 nanometers, Ge layer that thickness is 320 nanometers, ZnS layer that thickness is 758 nanometers, Ge layer that thickness is 166 nanometers, ZnS layer that thickness is 806 nanometers, Ge layer that thickness is 108 nanometers, ZnS layer that thickness is 555 nanometers, Ge layer that thickness is 318 nanometers, ZnS layer that thickness is 653 nanometers, Ge layer that thickness is 366 nanometers, ZnS layer that thickness is 746 nanometers, Ge layer that thickness is 405 nanometers, ZnS layer that thickness is 707 nanometers, Ge layer that thickness is 332 nanometers, ZnS layer that thickness is 834 nanometers, Ge layer that thickness is 441 nanometers, ZnS layer that thickness is 437 nanometers, Ge layer that thickness is 407 nanometers, ZnS layer that thickness is 451 nanometers, Ge layer that thickness is 560 nanometers and thickness are 473 nanometers; Said second coatings (12) comprises the Ge layer that the thickness that from inside to outside is arranged in order is 272 nanometers; Thickness is the ZnS layer of 282 nanometers; Thickness is the Ge layer of 1331 nanometers; Thickness is the ZnS layer of 2187 nanometers; Thickness is the Ge layer of 1077 nanometers; Thickness is the ZnS layer of 1964 nanometers; Thickness is the Ge layer of 1039 nanometers; Thickness is the ZnS layer of 1972 nanometers; Thickness is the Ge layer of 1027 nanometers; Thickness is the ZnS layer of 2012 nanometers; Thickness is the Ge layer of 1039 nanometers; Thickness is the ZnS layer of 2046 nanometers; Thickness is the Ge layer of 1070 nanometers; Thickness is the ZnS layer of 503 nanometers; Thickness is the Ge layer of 450 nanometers and the ZnS layer that thickness is 290 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200907744U CN202275172U (en) | 2012-03-12 | 2012-03-12 | 8000-14000 nanometer band-pass infrared filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200907744U CN202275172U (en) | 2012-03-12 | 2012-03-12 | 8000-14000 nanometer band-pass infrared filter |
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| CN202275172U true CN202275172U (en) | 2012-06-13 |
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| CN2012200907744U Expired - Lifetime CN202275172U (en) | 2012-03-12 | 2012-03-12 | 8000-14000 nanometer band-pass infrared filter |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102879847A (en) * | 2012-09-10 | 2013-01-16 | 中国航空工业集团公司洛阳电光设备研究所 | Film structure for filter and triple-band filter utilizing same |
| CN103245992A (en) * | 2013-04-25 | 2013-08-14 | 兰州空间技术物理研究所 | 1.55 mu m-1.75 mu m transmissive short-wave infrared optical filter and preparation method |
| CN103698831A (en) * | 2013-11-29 | 2014-04-02 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with pass band of 7,600 to 9,900 nm |
| CN105487156A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared filter applied to medium wave infrared imaging |
| CN105589121A (en) * | 2015-12-30 | 2016-05-18 | 杭州麦乐克电子科技有限公司 | Infrared optical filter for infrared sensing element |
| CN106125184A (en) * | 2016-08-30 | 2016-11-16 | 镇江爱豪科思电子科技有限公司 | A kind of formaldehyde gas detection infrared fileter and preparation method thereof |
| CN106199803A (en) * | 2016-07-25 | 2016-12-07 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| CN114325911A (en) * | 2021-12-31 | 2022-04-12 | 苏州厚朴传感科技有限公司 | Intermediate infrared double-color optical filter and preparation method thereof |
-
2012
- 2012-03-12 CN CN2012200907744U patent/CN202275172U/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102879847A (en) * | 2012-09-10 | 2013-01-16 | 中国航空工业集团公司洛阳电光设备研究所 | Film structure for filter and triple-band filter utilizing same |
| CN103245992A (en) * | 2013-04-25 | 2013-08-14 | 兰州空间技术物理研究所 | 1.55 mu m-1.75 mu m transmissive short-wave infrared optical filter and preparation method |
| CN103698831A (en) * | 2013-11-29 | 2014-04-02 | 杭州麦乐克电子科技有限公司 | Infrared temperature measurement optical filter with pass band of 7,600 to 9,900 nm |
| CN103698831B (en) * | 2013-11-29 | 2016-04-27 | 杭州麦乐克电子科技有限公司 | By the infrared measurement of temperature optical filter that band is 7600-9900nm |
| CN105487156A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared filter applied to medium wave infrared imaging |
| CN105589121A (en) * | 2015-12-30 | 2016-05-18 | 杭州麦乐克电子科技有限公司 | Infrared optical filter for infrared sensing element |
| CN106199803A (en) * | 2016-07-25 | 2016-12-07 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| CN106199803B (en) * | 2016-07-25 | 2018-11-06 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| CN106125184A (en) * | 2016-08-30 | 2016-11-16 | 镇江爱豪科思电子科技有限公司 | A kind of formaldehyde gas detection infrared fileter and preparation method thereof |
| CN106125184B (en) * | 2016-08-30 | 2019-01-25 | 镇江爱豪科思电子科技有限公司 | A kind of formaldehyde gas detection infrared fileter and preparation method thereof |
| CN114325911A (en) * | 2021-12-31 | 2022-04-12 | 苏州厚朴传感科技有限公司 | Intermediate infrared double-color optical filter and preparation method thereof |
| CN114325911B (en) * | 2021-12-31 | 2024-01-30 | 苏州厚朴传感科技有限公司 | Middle-infrared double-color filter and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 310000 Zhejiang province Hangzhou city West Lake high tech Park (Hangzhou Mai peak Electronic Technology Co. Ltd.) Patentee after: Hangzhou Mai peak Polytron Technologies Inc Address before: 310000 Zhejiang province Hangzhou city West Lake high tech Park (Hangzhou Mai peak Electronic Technology Co. Ltd.) Patentee before: Multi IR Optoelectronics Co., Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120613 |