CN203572997U

CN203572997U - Infrared imaging optical filter with passband in range of 11500 to 12500 nm and used for general surveying natural environment

Info

Publication number: CN203572997U
Application number: CN201320781869.5U
Authority: CN
Inventors: 王继平; 吕晶; 余初旺
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: MULTI IR OPTOELECTRONICS CO Ltd
Priority date: 2013-11-29
Filing date: 2013-11-29
Publication date: 2014-04-30
Anticipated expiration: 2023-11-29

Abstract

The utility model provides an infrared imaging optical filter with a passing belt in a range of 11500 to 12500 nm and used for general surveying natural environment, the peak value transmittance of the infrared imaging optical filter is high, and the signal to noise ratio can be greatly raised. The infrared imaging optical filter includes a substrate taking Ge as raw material, and Ge, ZnS as a first coating film layer and a second coating film layer, and the substrate is arranged between the first coating film layer and the second coating film layer. According to the infrared imaging optical filter with the passband in the range of 11500 to 12500 nm and used for general surveying natural environment, the Ge substrate matches with the ZnS and Ge coating film layers, the signal to noise ratio is greatly raised, and the imaging effect of an infrared imaging device can be raised, when the infrared imaging optical filter is used cooperating with the infrared imaging device. When the wavelength of the optical filter is in a range of 7000 to 11200 nm, T is equal to or less than 1.0 %; when the wavelength of the optical filter is in a range of 11500 to 12500 nm, Tavg is equal to or greater than 85 %; and the ripple depth is equal to or less than 10 % Tp.

Description

The infrared imaging optical filter of the physical environment that is 11500-12500nm by band generaI investigation

Technical field

The utility model relates to infrared fileter field, especially a kind of infrared imaging optical filter of the physical environment generaI investigation that is 11500-12500nm by band.

Background technology

Infrared thermography (thermal imaging system or infrared thermography) is to survey infrared energy (heat) by noncontact, and be converted into electric signal, and then on display Heat of Formation image and temperature value, and a kind of checkout equipment that can calculate temperature value.Infrared thermography (thermal imaging system or infrared thermography) can be by the heat precise quantification detecting, or measures, and makes you not only can observe heat picture, can also accurately identify and Exact Analysis the fault zone of heating.

The detector of infrared thermography is the key that realizes infrared energy (heat energy) switching electrical signals, the infrared energy (heat) sending due to various biologies is different, so in routine use in order to observe the heat picture of certain particular organisms, people tend to add infrared fileter in detector, by infrared fileter, can make detector only accept the infrared energy of specific band (heat energy), guarantee the imaging results of infrared thermography.

But at present, for the logical infrared fileter of 11500 to 12500 nanobelts of infrared thermal imaging, its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.

Utility model content

The purpose of this utility model is the deficiency in order to solve above-mentioned technology and provide a kind of peak transmittance high, the infrared imaging optical filter of the physical environment generaI investigation that is 11500-12500nm by band that can improve greatly signal to noise ratio (S/N ratio).

In order to achieve the above object, the infrared imaging optical filter of the physical environment generaI investigation that is 11500-12500nm by band that the utility model is designed, comprises take Ge as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 190nm thickness, the ZnS layer of 1326nm thickness, the Ge layer of 449nm thickness, the ZnS layer of 694nm thickness, the Ge layer of 482nm thickness, the ZnS layer of 1152nm thickness, the Ge layer of 570nm thickness, the ZnS layer of 1072nm thickness, the Ge layer of 521nm thickness, the ZnS layer of 1270nm thickness, the Ge layer of 494nm thickness, the ZnS layer of 834nm thickness, the Ge layer of 426nm thickness, the ZnS layer of 1113nm thickness, the Ge layer of 716nm thickness, the ZnS layer of 1205nm thickness, the Ge layer of 527nm thickness, the ZnS layer of 1095nm thickness, the Ge layer of 443nm thickness, the ZnS layer of 925nm thickness, the Ge layer of 450nm thickness, the ZnS layer of 1382nm thickness, the Ge layer of 498nm thickness, the ZnS layer of 1000nm thickness, the Ge layer of 662nm thickness, the ZnS layer of 967nm thickness, the Ge layer of 530nm thickness, the ZnS layer of 710nm thickness, the Ge layer of 325nm thickness and the ZnS layer of 400nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 180nm thickness, the ZnS layer of 484nm thickness, the Ge layer of 389nm thickness, the ZnS layer of 872nm thickness, the Ge layer of 476nm thickness, the ZnS layer of 884nm thickness, the Ge layer of 436nm thickness, the ZnS layer of 841nm thickness, the Ge layer of 466nm thickness, the ZnS layer of 998nm thickness, the Ge layer of 459nm thickness, the ZnS layer of 866nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 814nm thickness, the Ge layer of 630nm thickness and the ZnS layer of 1486nm thickness.

Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.

The infrared imaging optical filter of the physical environment generaI investigation that is 11500-12500nm by band that the utility model obtains, the substrate matching surface ZnS of its Ge material, the film plating layer of Ge material, greatly improve signal to noise ratio (S/N ratio), coordinated infrared thermography to use, promoted the imaging results of infrared thermography.This optical filter 7000～11200nm, T≤1.0%; 11500～12500nm, Tavg >=85%; Ripple's depth≤10%Tp.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram;

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1:

As Fig. 1, shown in Fig. 2, the infrared imaging optical filter of the physical environment generaI investigation that is 11500-12500nm by band that the present embodiment is described, comprises take Ge as raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 190nm thickness, the ZnS layer of 1326nm thickness, the Ge layer of 449nm thickness, the ZnS layer of 694nm thickness, the Ge layer of 482nm thickness, the ZnS layer of 1152nm thickness, the Ge layer of 570nm thickness, the ZnS layer of 1072nm thickness, the Ge layer of 521nm thickness, the ZnS layer of 1270nm thickness, the Ge layer of 494nm thickness, the ZnS layer of 834nm thickness, the Ge layer of 426nm thickness, the ZnS layer of 1113nm thickness, the Ge layer of 716nm thickness, the ZnS layer of 1205nm thickness, the Ge layer of 527nm thickness, the ZnS layer of 1095nm thickness, the Ge layer of 443nm thickness, the ZnS layer of 925nm thickness, the Ge layer of 450nm thickness, the ZnS layer of 1382nm thickness, the Ge layer of 498nm thickness, the ZnS layer of 1000nm thickness, the Ge layer of 662nm thickness, the ZnS layer of 967nm thickness, the Ge layer of 530nm thickness, the ZnS layer of 710nm thickness, the Ge layer of 325nm thickness and the ZnS layer of 400nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Ge layer of 180nm thickness, the ZnS layer of 484nm thickness, the Ge layer of 389nm thickness, the ZnS layer of 872nm thickness, the Ge layer of 476nm thickness, the ZnS layer of 884nm thickness, the Ge layer of 436nm thickness, the ZnS layer of 841nm thickness, the Ge layer of 466nm thickness, the ZnS layer of 998nm thickness, the Ge layer of 459nm thickness, the ZnS layer of 866nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 814nm thickness, the Ge layer of 630nm thickness and the ZnS layer of 1486nm thickness.

Claims

1. an infrared imaging optical filter for the physical environment that is 11500-12500nm by band generaI investigation, comprises take Ge as raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 190nm thickness, the ZnS layer of 1326nm thickness, the Ge layer of 449nm thickness, the ZnS layer of 694nm thickness, the Ge layer of 482nm thickness, the ZnS layer of 1152nm thickness, the Ge layer of 570nm thickness, the ZnS layer of 1072nm thickness, the Ge layer of 521nm thickness, the ZnS layer of 1270nm thickness, the Ge layer of 494nm thickness, the ZnS layer of 834nm thickness, the Ge layer of 426nm thickness, the ZnS layer of 1113nm thickness, the Ge layer of 716nm thickness, the ZnS layer of 1205nm thickness, the Ge layer of 527nm thickness, the ZnS layer of 1095nm thickness, the Ge layer of 443nm thickness, the ZnS layer of 925nm thickness, the Ge layer of 450nm thickness, the ZnS layer of 1382nm thickness, the Ge layer of 498nm thickness, the ZnS layer of 1000nm thickness, the Ge layer of 662nm thickness, the ZnS layer of 967nm thickness, the Ge layer of 530nm thickness, the ZnS layer of 710nm thickness, the Ge layer of 325nm thickness and the ZnS layer of 400nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Ge layer of 180nm thickness, the ZnS layer of 484nm thickness, the Ge layer of 389nm thickness, the ZnS layer of 872nm thickness, the Ge layer of 476nm thickness, the ZnS layer of 884nm thickness, the Ge layer of 436nm thickness, the ZnS layer of 841nm thickness, the Ge layer of 466nm thickness, the ZnS layer of 998nm thickness, the Ge layer of 459nm thickness, the ZnS layer of 866nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 814nm thickness, the Ge layer of 630nm thickness and the ZnS layer of 1486nm thickness.