CN103713342B - The infrared imaging optical filter that the physical environment being 11500-12500nm by band is generally investigated - Google Patents
The infrared imaging optical filter that the physical environment being 11500-12500nm by band is generally investigated Download PDFInfo
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- CN103713342B CN103713342B CN201310631230.3A CN201310631230A CN103713342B CN 103713342 B CN103713342 B CN 103713342B CN 201310631230 A CN201310631230 A CN 201310631230A CN 103713342 B CN103713342 B CN 103713342B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 12
- 238000003331 infrared imaging Methods 0.000 title claims abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000001931 thermography Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 5
- 238000003384 imaging method Methods 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
Abstract
A kind of peak transmittance designed by the present invention is high, what can improve signal to noise ratio (S/N ratio) greatly is the infrared imaging optical filter that the physical environment of 11500-12500nm is generally investigated by band, comprising with Ge is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, the infrared imaging optical filter that the physical environment that should be 11500-12500nm by band is generally investigated, the substrate matching surface ZnS of its Ge material, the film plating layer of Ge material, substantially increase signal to noise ratio (S/N ratio), infrared thermography is coordinated to use, promote the imaging results of infrared thermography.This optical filter 7000 ~ 11200nm, T≤1.0%; 11500 ~ 12500nm, Tavg >=85%; Ripple's depth≤10%Tp.
Description
Technical field
The present invention relates to infrared fileter field, especially a kind of is the infrared imaging optical filter that the physical environment of 11500-12500nm is generally investigated by band.
Background technology
Infrared thermography (thermal imaging system or infrared thermography) detects infrared energy (heat) by noncontact, and be converted into electric signal, and then Heat of Formation image and temperature value over the display, and a kind of checkout equipment that can calculate temperature value.The heat precise quantification that infrared thermography (thermal imaging system or infrared thermography) can will detect, or measure, make you observe heat picture, accurately can also identify and Exact Analysis the fault zone of heating.
The detector of infrared thermography is the key realizing infrared energy (heat energy) switching electrical signals, the infrared energy (heat) sent due to various biology is different, so in order to observe the heat picture of certain particular organisms in routine use, people often add infrared fileter in detector, detector can be made only to accept the infrared energy (heat energy) of specific band by infrared fileter, ensure the imaging results of infrared thermography.
But 11500 to 12500 nanobelts at present for infrared thermal imaging lead to infrared fileter, and its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.
Summary of the invention
The object of the invention is the deficiency in order to solve above-mentioned technology and provide a kind of peak transmittance high, what can improve signal to noise ratio (S/N ratio) greatly is the infrared imaging optical filter that the physical environment of 11500-12500nm is generally investigated by band.
In order to achieve the above object, designed by the present invention is the infrared imaging optical filter that the physical environment of 11500-12500nm is generally investigated by band, and comprising with Ge is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order from inside to outside and includes: the Ge layer of 190nm thickness, the ZnS layer of 1326nm thickness, the Ge layer of 449nm thickness, the ZnS layer of 694nm thickness, the Ge layer of 482nm thickness, the ZnS layer of 1152nm thickness, the Ge layer of 570nm thickness, the ZnS layer of 1072nm thickness, the Ge layer of 521nm thickness, the ZnS layer of 1270nm thickness, the Ge layer of 494nm thickness, the ZnS layer of 834nm thickness, the Ge layer of 426nm thickness, the ZnS layer of 1113nm thickness, the Ge layer of 716nm thickness, the ZnS layer of 1205nm thickness, the Ge layer of 527nm thickness, the ZnS layer of 1095nm thickness, the Ge layer of 443nm thickness, the ZnS layer of 925nm thickness, the Ge layer of 450nm thickness, the ZnS layer of 1382nm thickness, the Ge layer of 498nm thickness, the ZnS layer of 1000nm thickness, the Ge layer of 662nm thickness, the ZnS layer of 967nm thickness, the Ge layer of 530nm thickness, the ZnS layer of 710nm thickness, the Ge layer of 325nm thickness and the ZnS layer of 400nm thickness, described second film plating layer is arranged in order from inside to outside and includes: the Ge layer of 180nm thickness, the ZnS layer of 484nm thickness, the Ge layer of 389nm thickness, the ZnS layer of 872nm thickness, the Ge layer of 476nm thickness, the ZnS layer of 884nm thickness, the Ge layer of 436nm thickness, the ZnS layer of 841nm thickness, the Ge layer of 466nm thickness, the ZnS layer of 998nm thickness, the Ge layer of 459nm thickness, the ZnS layer of 866nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 814nm thickness, the Ge layer of 630nm thickness and the ZnS layer of 1486nm thickness.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
What the present invention obtained is the infrared imaging optical filter that the physical environment of 11500-12500nm is generally investigated by band, the film plating layer of substrate matching surface ZnS, Ge material of its Ge material, substantially increase signal to noise ratio (S/N ratio), coordinate infrared thermography to use, promote the imaging results of infrared thermography.This optical filter 7000 ~ 11200nm, T≤1.0%; 11500 ~ 12500nm, Tavg >=85%; Ripple's depth≤10%Tp.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, what the present embodiment described is the infrared imaging optical filter that the physical environment of 11500-12500nm is generally investigated by band, and comprising with Ge is raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order from inside to outside and includes: the Ge layer of 190nm thickness, the ZnS layer of 1326nm thickness, the Ge layer of 449nm thickness, the ZnS layer of 694nm thickness, the Ge layer of 482nm thickness, the ZnS layer of 1152nm thickness, the Ge layer of 570nm thickness, the ZnS layer of 1072nm thickness, the Ge layer of 521nm thickness, the ZnS layer of 1270nm thickness, the Ge layer of 494nm thickness, the ZnS layer of 834nm thickness, the Ge layer of 426nm thickness, the ZnS layer of 1113nm thickness, the Ge layer of 716nm thickness, the ZnS layer of 1205nm thickness, the Ge layer of 527nm thickness, the ZnS layer of 1095nm thickness, the Ge layer of 443nm thickness, the ZnS layer of 925nm thickness, the Ge layer of 450nm thickness, the ZnS layer of 1382nm thickness, the Ge layer of 498nm thickness, the ZnS layer of 1000nm thickness, the Ge layer of 662nm thickness, the ZnS layer of 967nm thickness, the Ge layer of 530nm thickness, the ZnS layer of 710nm thickness, the Ge layer of 325nm thickness and the ZnS layer of 400nm thickness, described second film plating layer 3 is arranged in order from inside to outside and includes: the Ge layer of 180nm thickness, the ZnS layer of 484nm thickness, the Ge layer of 389nm thickness, the ZnS layer of 872nm thickness, the Ge layer of 476nm thickness, the ZnS layer of 884nm thickness, the Ge layer of 436nm thickness, the ZnS layer of 841nm thickness, the Ge layer of 466nm thickness, the ZnS layer of 998nm thickness, the Ge layer of 459nm thickness, the ZnS layer of 866nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 814nm thickness, the Ge layer of 630nm thickness and the ZnS layer of 1486nm thickness.
Claims (1)
1. the infrared imaging optical filter that the physical environment being 11500-12500nm by band is generally investigated, comprising with Ge is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order from inside to outside and includes: the Ge layer of 190nm thickness, the ZnS layer of 1326nm thickness, the Ge layer of 449nm thickness, the ZnS layer of 694nm thickness, the Ge layer of 482nm thickness, the ZnS layer of 1152nm thickness, the Ge layer of 570nm thickness, the ZnS layer of 1072nm thickness, the Ge layer of 521nm thickness, the ZnS layer of 1270nm thickness, the Ge layer of 494nm thickness, the ZnS layer of 834nm thickness, the Ge layer of 426nm thickness, the ZnS layer of 1113nm thickness, the Ge layer of 716nm thickness, the ZnS layer of 1205nm thickness, the Ge layer of 527nm thickness, the ZnS layer of 1095nm thickness, the Ge layer of 443nm thickness, the ZnS layer of 925nm thickness, the Ge layer of 450nm thickness, the ZnS layer of 1382nm thickness, the Ge layer of 498nm thickness, the ZnS layer of 1000nm thickness, the Ge layer of 662nm thickness, the ZnS layer of 967nm thickness, the Ge layer of 530nm thickness, the ZnS layer of 710nm thickness, the Ge layer of 325nm thickness and the ZnS layer of 400nm thickness, described second film plating layer is arranged in order from inside to outside and includes: the Ge layer of 180nm thickness, the ZnS layer of 484nm thickness, the Ge layer of 389nm thickness, the ZnS layer of 872nm thickness, the Ge layer of 476nm thickness, the ZnS layer of 884nm thickness, the Ge layer of 436nm thickness, the ZnS layer of 841nm thickness, the Ge layer of 466nm thickness, the ZnS layer of 998nm thickness, the Ge layer of 459nm thickness, the ZnS layer of 866nm thickness, the Ge layer of 388nm thickness, the ZnS layer of 814nm thickness, the Ge layer of 630nm thickness and the ZnS layer of 1486nm thickness.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310631230.3A CN103713342B (en) | 2013-11-29 | 2013-11-29 | The infrared imaging optical filter that the physical environment being 11500-12500nm by band is generally investigated |
| DE102014115173.9A DE102014115173B4 (en) | 2013-11-29 | 2014-10-17 | An infrared imaging filter used in the natural environment with a transmission band of 11500-12500nm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310631230.3A CN103713342B (en) | 2013-11-29 | 2013-11-29 | The infrared imaging optical filter that the physical environment being 11500-12500nm by band is generally investigated |
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| Publication Number | Publication Date |
|---|---|
| CN103713342A CN103713342A (en) | 2014-04-09 |
| CN103713342B true CN103713342B (en) | 2016-04-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310631230.3A Active CN103713342B (en) | 2013-11-29 | 2013-11-29 | The infrared imaging optical filter that the physical environment being 11500-12500nm by band is generally investigated |
Country Status (2)
| Country | Link |
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| CN (1) | CN103713342B (en) |
| DE (1) | DE102014115173B4 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105137514B (en) * | 2015-09-11 | 2017-07-28 | 兰州空间技术物理研究所 | 4.2~4.45 μm pass through medium-wave infrared optical filter and preparation method |
| CN105487156A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared filter applied to medium wave infrared imaging |
| CN106199803B (en) * | 2016-07-25 | 2018-11-06 | 镇江爱豪科思电子科技有限公司 | A kind of temperature sensing broadband infrared optical filter and preparation method thereof |
| CN111045118A (en) * | 2019-12-26 | 2020-04-21 | 兰州空间技术物理研究所 | Damp-heat-resistant infrared high-reflection photonic crystal film and preparation method thereof |
| CN112162340B (en) * | 2020-09-15 | 2022-03-29 | 中国科学院上海技术物理研究所 | Infrared broad spectrum color separation sheet using germanium as substrate and inclined at 45-degree angle |
| CN113608289B (en) * | 2021-08-05 | 2023-06-02 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for nitrogen trifluoride gas detection and preparation method thereof |
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| CN202472016U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | Infrared optical filter with 1680-nanometer bandpass |
| CN202472020U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | Infrared optical filter with 4640-nanometer bandpass |
| CN202472022U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 4530-nanometer band-pass infrared optical filter |
| CN203572997U (en) * | 2013-11-29 | 2014-04-30 | 杭州麦乐克电子科技有限公司 | Infrared imaging optical filter with passband in range of 11500 to 12500 nm and used for general surveying natural environment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5926317A (en) * | 1996-11-06 | 1999-07-20 | Jds Fitel Inc. | Multilayer thin film dielectric bandpass filter |
| JP2004053719A (en) * | 2002-07-17 | 2004-02-19 | Matsushita Electric Works Ltd | Infrared transmi filter |
| DE102010018052B4 (en) * | 2010-04-22 | 2011-12-08 | Jenoptik Optical Systems Gmbh | IR neutral filter with a substrate transparent to infrared radiation |
-
2013
- 2013-11-29 CN CN201310631230.3A patent/CN103713342B/en active Active
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2014
- 2014-10-17 DE DE102014115173.9A patent/DE102014115173B4/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590918A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | 10560 nano bandpass infrared filter and making method of same |
| CN202472016U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | Infrared optical filter with 1680-nanometer bandpass |
| CN202472020U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | Infrared optical filter with 4640-nanometer bandpass |
| CN202472022U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 4530-nanometer band-pass infrared optical filter |
| CN203572997U (en) * | 2013-11-29 | 2014-04-30 | 杭州麦乐克电子科技有限公司 | Infrared imaging optical filter with passband in range of 11500 to 12500 nm and used for general surveying natural environment |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102014115173A1 (en) | 2015-06-03 |
| DE102014115173B4 (en) | 2020-10-22 |
| CN103713342A (en) | 2014-04-09 |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: Multi IR Optoelectronics Co., Ltd. |