CN104597546A - Infrared light filtering sensitive element with passing bands ranging from 4200nm to 4450nm - Google Patents
Infrared light filtering sensitive element with passing bands ranging from 4200nm to 4450nm Download PDFInfo
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- CN104597546A CN104597546A CN201410733931.2A CN201410733931A CN104597546A CN 104597546 A CN104597546 A CN 104597546A CN 201410733931 A CN201410733931 A CN 201410733931A CN 104597546 A CN104597546 A CN 104597546A
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- sio
- sensitive element
- filtering sensitive
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- 238000001914 filtration Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 10
- 239000011247 coating layer Substances 0.000 abstract 4
- 238000001931 thermography Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an infrared light filtering sensitive element with passing bands ranging from 4200nm to 4450nm. The infrared light filtering sensitive element comprises a substrate with Si serving as the raw material, a first Ge and Sio coating layer and a second Ge and Sio coating layer. The substrate is arranged between the first coating layer and the second coating layer. By means of the element, during temperature measuring, the signal to noise ratio can be improved greatly, the measuring accuracy is improved, and the element is applicable to large-range promotion and utilization. The light filtering sensitive element 50% Cut on is equal to 4200+/-20nm, 50% Cut on is equal to 4450+/-20nm, between 4250nm and 4400nm, T is larger than or equal to 88%, and Tavg is large than or equal to 92%; in a range of 1000nm to 4000nm and 4600nm to 7000nm, T is smaller than or equal to 0.1%.
Description
Technical field
The present invention relates to infrared filtering sensitive element field, especially a kind of infrared filtering sensitive element by being with as 4200-4450nm.
Background technology
Infrared thermography (thermal imaging system or infrared thermography) detects infrared energy (heat) by noncontact, and be converted into electric signal, and then Heat of Formation image and temperature value over the display, and a kind of checkout equipment that can calculate temperature value.Infrared thermography (thermal imaging system or infrared thermography) can, by the heat precise quantification that detects or measurement, make you observe heat picture, accurately can also identify and Exact Analysis the fault zone of heating.
The detector of infrared thermography is the key realizing infrared energy (heat energy) switching electrical signals, the infrared energy (heat energy) sent due to various biology is different, so in order to observe the heat picture of certain particular organisms in routine use, people often add infrared filtering sensitive element in detector, detector can be made only to accept the infrared energy (heat energy) of specific band by infrared filtering sensitive element, ensure the imaging results of infrared thermography.
But current infrared filtering sensitive element, its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.
Summary of the invention
The object of the invention is the deficiency in order to solve above-mentioned technology and provide that a kind of measuring accuracy is high, what greatly can improve signal to noise ratio (S/N ratio) is the infrared filtering sensitive element of 4200-4450nm by band.
In order to achieve the above object, a kind of infrared filtering sensitive element by being with as 4200-4450nm designed by the present invention, comprising with Si is raw-material substrate, with Ge, SiO is the first filming layer and with Si, SiO is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 127nm thickness from inside to outside, the SiO layer of 253nm thickness, the Ge layer of 127nm thickness, the SiO layer of 283nm thickness, the Ge layer of 109nm thickness, the SiO layer of 260nm thickness, the Ge layer of 150nm thickness, the SiO layer of 247nm thickness, the Ge layer of 243nm thickness, the SiO layer of 328nm thickness, the Ge layer of 165nm thickness, the SiO layer of 317nm thickness, the Ge layer of 128nm thickness, the SiO layer of 609nm thickness, the Ge layer of 260nm thickness, the SiO layer of 206nm thickness, the Ge layer of 93nm thickness, the SiO layer of 612nm thickness, the Ge layer of 265nm thickness, the SiO layer of 1073nm thickness, the Ge layer of 335nm thickness, the SiO layer of 881nm thickness, the Ge layer of 393nm thickness, the SiO layer of 860nm thickness, the Ge layer of 408nm thickness, the SiO layer of 438nm thickness, the second described film plating layer is arranged in order the Si layer including 106nm thickness from inside to outside, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 1245nm thickness, the Si layer of 316nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 2500nm thickness, the Si layer of 316nm thickness, the SiO layer of 572nm thickness, the Si layer of 326nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 1245nm thickness, the Si layer of 369nm thickness, the SiO layer of 499nm thickness, the Si layer of 300nm thickness, the SiO layer of 731nm thickness.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
A kind of infrared filtering sensitive element by being with as 4200-4450nm that the present invention obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and use.This optical filtering sensitive element 50%Cut on=4200 ± 20nm, 50%Cut on=4450 ± 20nm, 4250 ~ 4400nm, T >=88%, Tavg >=92%, 1000 ~ 4000nm, 4600 ~ 7000nm, T≤3%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate 2, second film plating layer 3.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1.
As depicted in figs. 1 and 2, a kind of infrared filtering sensitive element by being with as 4200-4450nm that the present embodiment describes, comprising with Si is raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Si, SiO is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 127nm thickness from inside to outside, the SiO layer of 253nm thickness, the Ge layer of 127nm thickness, the SiO layer of 283nm thickness, the Ge layer of 109nm thickness, the SiO layer of 260nm thickness, the Ge layer of 150nm thickness, the SiO layer of 247nm thickness, the Ge layer of 243nm thickness, the SiO layer of 328nm thickness, the Ge layer of 165nm thickness, the SiO layer of 317nm thickness, the Ge layer of 128nm thickness, the SiO layer of 609nm thickness, the Ge layer of 260nm thickness, the SiO layer of 206nm thickness, the Ge layer of 93nm thickness, the SiO layer of 612nm thickness, the Ge layer of 265nm thickness, the SiO layer of 1073nm thickness, the Ge layer of 335nm thickness, the SiO layer of 881nm thickness, the Ge layer of 393nm thickness, the SiO layer of 860nm thickness, the Ge layer of 408nm thickness, the SiO layer of 438nm thickness, the second described film plating layer 3 is arranged in order the Si layer including 106nm thickness from inside to outside, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 1245nm thickness, the Si layer of 316nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 2500nm thickness, the Si layer of 316nm thickness, the SiO layer of 572nm thickness, the Si layer of 326nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 1245nm thickness, the Si layer of 369nm thickness, the SiO layer of 499nm thickness, the Si layer of 300nm thickness, the SiO layer of 731nm thickness.
Claims (1)
1. be an infrared filtering sensitive element of 4200-4450nm by band, comprising with Si is raw-material substrate (2), with Ge, SiO is the first filming layer (1) and with Si, SiO is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 127nm thickness from inside to outside, the SiO layer of 253nm thickness, the Ge layer of 127nm thickness, the SiO layer of 283nm thickness, the Ge layer of 109nm thickness, the SiO layer of 260nm thickness, the Ge layer of 150nm thickness, the SiO layer of 247nm thickness, the Ge layer of 243nm thickness, the SiO layer of 328nm thickness, the Ge layer of 165nm thickness, the SiO layer of 317nm thickness, the Ge layer of 128nm thickness, the SiO layer of 609nm thickness, the Ge layer of 260nm thickness, the SiO layer of 206nm thickness, the Ge layer of 93nm thickness, the SiO layer of 612nm thickness, the Ge layer of 265nm thickness, the SiO layer of 1073nm thickness, the Ge layer of 335nm thickness, the SiO layer of 881nm thickness, the Ge layer of 393nm thickness, the SiO layer of 860nm thickness, the Ge layer of 408nm thickness, the SiO layer of 438nm thickness, described the second film plating layer (3) is arranged in order the Si layer including 106nm thickness from inside to outside, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 1245nm thickness, the Si layer of 316nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 2500nm thickness, the Si layer of 316nm thickness, the SiO layer of 572nm thickness, the Si layer of 326nm thickness, the SiO layer of 622nm thickness, the Si layer of 316nm thickness, the SiO layer of 1245nm thickness, the Si layer of 369nm thickness, the SiO layer of 499nm thickness, the Si layer of 300nm thickness, the SiO layer of 731nm thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410733931.2A CN104597546A (en) | 2014-12-07 | 2014-12-07 | Infrared light filtering sensitive element with passing bands ranging from 4200nm to 4450nm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410733931.2A CN104597546A (en) | 2014-12-07 | 2014-12-07 | Infrared light filtering sensitive element with passing bands ranging from 4200nm to 4450nm |
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| Publication Number | Publication Date |
|---|---|
| CN104597546A true CN104597546A (en) | 2015-05-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410733931.2A Pending CN104597546A (en) | 2014-12-07 | 2014-12-07 | Infrared light filtering sensitive element with passing bands ranging from 4200nm to 4450nm |
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| Country | Link |
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| CN (1) | CN104597546A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291780A (en) * | 2015-05-14 | 2017-01-04 | 长春理工大学 | A kind of broadband extensive angle infrared beam splitter |
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| CN102540313A (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 7.6-micron front cut-off infrared optical filter and making method thereof |
| CN202305861U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 3,000-5,000nm band-pass infrared filter |
| CN102590917A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | Infrared filter with broadband of 3.65 to 5 microns, and manufacturing method for infrared filter |
| CN102590918A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | 10560 nano bandpass infrared filter and making method of same |
| CN103713348A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Astronomical optical filter for graphic spectrum observation |
| CN204374473U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | By the infrared filtering sensitive element that band is 4200-4450nm |
-
2014
- 2014-12-07 CN CN201410733931.2A patent/CN104597546A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102540313A (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 7.6-micron front cut-off infrared optical filter and making method thereof |
| CN202305861U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 3,000-5,000nm band-pass infrared filter |
| CN102590917A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | Infrared filter with broadband of 3.65 to 5 microns, and manufacturing method for infrared filter |
| CN102590918A (en) * | 2012-03-12 | 2012-07-18 | 杭州麦乐克电子科技有限公司 | 10560 nano bandpass infrared filter and making method of same |
| CN103713348A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Astronomical optical filter for graphic spectrum observation |
| CN204374473U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | By the infrared filtering sensitive element that band is 4200-4450nm |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106291780A (en) * | 2015-05-14 | 2017-01-04 | 长春理工大学 | A kind of broadband extensive angle infrared beam splitter |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant before: Multi IR Optoelectronics Co., Ltd. |
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Application publication date: 20150506 |