CN204314580U - 一种像素结构、阵列基板、显示面板和显示装置 - Google Patents

一种像素结构、阵列基板、显示面板和显示装置 Download PDF

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CN204314580U
CN204314580U CN201520012777.XU CN201520012777U CN204314580U CN 204314580 U CN204314580 U CN 204314580U CN 201520012777 U CN201520012777 U CN 201520012777U CN 204314580 U CN204314580 U CN 204314580U
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electrode
pixel
opening
expansion
pixel electrode
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李盼
李文波
程鸿飞
乔勇
先建波
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BOE Technology Group Co Ltd
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Priority to PCT/CN2015/079474 priority patent/WO2016110039A1/zh
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Abstract

本实用新型公开了一种像素结构、阵列基板、显示面板和显示装置，解决现有技术中通过增加亚像素单元的TFT的面积来提高TFT的驱动能力，而导致的亚像素单元的像素开口率降低的问题。像素结构包括沿列方向排布的第一像素电极和第二像素电极、及二者之间的TFT；第一像素电极具有朝向第二像素电极延伸的第一扩展电极，第二像素电极具有朝向第一像素电极延伸的第二扩展电极；TFT包括彼此绝缘的源极、第一漏极和第二漏极、设置于源极的上方或下方的栅极；源极具有第一开口和第二开口，第一漏极与第一扩展电极电性连接并延伸至第一开口内，第二漏极与第二扩展电极电性连接并延伸至第二开口内。

Description

一种像素结构、阵列基板、显示面板和显示装置
技术领域
本实用新型涉及液晶显示领域，尤其涉及一种像素结构、阵列基板、显示面板和显示装置。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)具有厚度薄、功耗低、无辐射等特点，近年来得到了迅速地发展，在当前的平板显示器市场中占据了主导地位。目前，TFT-LCD在各种大中小尺寸的产品上得到了广泛的应用，几乎涵盖了当今信息社会的主要电子产品，在较大尺寸的产品上的应用如液晶电视和高清晰度数字电视。
对于液晶电视而言，由于其亚像素单元的面积较大，因此需要阵列基板上的TFT具有较强的驱动能力。现有技术中为了提高TFT的驱动能力，往往将TFT的面积加大，较大的TFT占用亚像素单元的显示区域，导致亚像素单元的像素开口率降低。
实用新型内容
本实用新型的目的是提供一种像素结构、阵列基板、显示面板和显示装置，解决现有技术中通过增加亚像素单元的TFT的面积来提高TFT的驱动能力，而导致的亚像素单元的像素开口率降低的问题。
本实用新型的目的是通过以下技术方案实现的：
本实用新型实施例提供一种像素结构，包括沿列方向排布的第一像素电极和第二像素电极、设置于所述第一像素电极和第二像素电极之间的薄膜晶体管TFT；
所述第一像素电极具有朝向所述第二像素电极延伸的第一扩展电极，所述第二像素电极具有朝向所述第一像素电极延伸的第二扩展电极；
所述TFT包括彼此绝缘的源极、第一漏极和第二漏极、设置于所述源极的上方或下方的栅极；所述源极具有第一开口和第二开口，所述第一漏极与所述第一扩展电极电性连接并延伸至所述第一开口内，所述第二漏极与所述第二扩展电极电性连接并延伸至所述第二开口内。
本实用新型实施例中，所述源极具有第一开口和第二开口，与第一漏极和第二漏极形成的沟道区域的宽长比增加，可以提高TFT的驱动能；所述第一像素电极和所述第二像素电极具有分别朝向对方延伸的扩展电极，所述第一漏极和所述第二漏极分别与相对应的扩展电极电性连接；有效利用所述第一像素电极和所述第二像素电极之间的区域，使所述第一漏极和所述第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
优选的，所述源极为S型，所述第一开口和所述第二开口的朝向相反，所述第一漏极和所述第二漏极位于所述源极的不同侧。
优选的，所述源极为M型，所述第一开口和所述第二开口的朝向相同，所述第一漏极和所述第二漏极位于所述源极的同一侧。
优选的，所述第一开口和所述第二开口的开口方向与列方向垂直。
优选的，所述第一扩展电极、所述第二扩展电极和所述栅极的垂直投影无交叠区域。
本实用新型实施例的有益效果如下：所述第一像素电极和所述第二像素电极具有分别朝向对方延伸的扩展电极，所述第一漏极和所述第二漏极分别与相对应的扩展电极电性连接；所述源极具有所述第一开口和所述第二开口，所述第一像素电极和所述第二像素电极可以由各自与像素电极的连接处沿水平方向延伸至对应的开口内，可以使TFT具有较大的面积，即提高TFT的驱动能力；通过上述设计有效利用所述第一像素电极和所述第二像素电极之间的区域，使所述第一漏极和所述第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
本实用新型实施例提供一种阵列基板，包括形成于衬底基板上的亚像素单元阵列，所述亚像素单元具有如上实施例提供的所述像素结构。
优选的，属于同一行的所述亚像素单元的所述第一像素电极和所述第二像素电极之间设置一条折线形的栅线，所述栅线连接该行全部所述亚像素单元的栅极；
所述第一漏极、所述第二漏极、所述第一扩展电极和所述第二扩展电极在所述衬底基板上的垂直投影与所述栅线在所述衬底基板上的垂直投影无交叠区域。
优选的，属于同一行的所述亚像素单元的所述第一像素电极和所述第二像素电极之间设置第一公共电极线和第二公共电极线，所述第一公共电极线靠近所述第一像素电极，所述第一公共电极线和所述第二公共电极线分别包括朝向对方延伸的扩展部，所述第一公共电极线的扩展部的垂直投影和所述第一扩展电极在所述衬底基板上的垂直投影部分交叠或完全交叠，所述第二公共电极线的扩展部的垂直投影和所述第二扩展电极在所述衬底基板上的垂直投影部分交叠或完全交叠。
优选的，所述第一公共电极线在所述衬底基板上的垂直投影与所述栅线和所述栅极在所述衬底基板上的垂直投影无交叠，所述第二公共电极线在所述衬底基板上的垂直投影与所述栅线和所述栅极在所述衬底基板上的垂直投影无交叠。
本实用新型实施例有益效果如下：所述第一像素电极和所述第二像素电极具有分别朝向对方延伸的扩展电极，所述第一漏极和所述第二漏极分别与相对应的扩展电极电性连接；所述源极具有所述第一开口和所述第二开口，所述第一像素电极和所述第二像素电极可以由各自与像素电极的连接处沿水平方向延伸至对应的开口内，可以使TFT具有较大的面积，即提高TFT的驱动能力；通过上述设计有效利用所述第一像素电极和所述第二像素电极之间的区域，使所述第一漏极和所述第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
本实用新型实施例提供一种显示面板，包括上实施例提供的所述阵列基板。
本实用新型实施例有益效果如下：所述第一像素电极和所述第二像素电极具有分别朝向对方延伸的扩展电极，所述第一漏极和所述第二漏极分别与相对应的扩展电极电性连接；所述源极具有所述第一开口和所述第二开口，所述第一像素电极和所述第二像素电极可以由各自与像素电极的连接处沿水平方向延伸至对应的开口内，可以使TFT具有较大的面积，即提高TFT的驱动能力；通过上述设计有效利用所述第一像素电极和所述第二像素电极之间的区域，使所述第一漏极和所述第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
本实用新型实施例提供一种显示装置，包括上实施例提供的所述显示面板。
本实用新型实施例有益效果如下：所述第一像素电极和所述第二像素电极具有分别朝向对方延伸的扩展电极，所述第一漏极和所述第二漏极分别与相对应的扩展电极电性连接；所述源极具有所述第一开口和所述第二开口，所述第一像素电极和所述第二像素电极可以由各自与像素电极的连接处沿水平方向延伸至对应的开口内，可以使TFT具有较大的面积，即提高TFT的驱动能力；通过上述设计有效利用所述第一像素电极和所述第二像素电极之间的区域，使所述第一漏极和所述第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
附图说明
图1为本实用新型实施例提供的第一种所述像素结构的示意图；
图2为图1中所示的源极、第一漏极和第二漏极的放大示意图；
图3为本实用新型实施例提供的第二种所述像素结构的示意图；
图4为图3中所示的源极、第一漏极和第二漏极的放大示意图；
图5为本实用新型实施例提供的第三种所述像素结构的示意图；
图6为本实用新型实施例提供的第一种阵列基板的局部示意图；
图7为本实用新型实施例提供的第二种阵列基板的局部示意图。
具体实施方式
下面结合说明书附图对本实用新型实施例的实现过程进行详细说明。需要注意的是，自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本实用新型，而不能理解为对本实用新型的限制。
参见图1至图4，本实用新型实施例提供一种像素结构100，包括沿列方向排布的第一像素电极1和第二像素电极2、设置于第一像素电极1和第二像素电极2之间的薄膜晶体管TFT 3；
第一像素电极1具有朝向第二像素电极2延伸的第一扩展电极11，第二像素电极2具有朝向第一像素电极1延伸的第二扩展电极12；
TFT 3包括彼此绝缘的源极31、第一漏极32和第二漏极33、设置于源极31的上方或下方的栅极34、及设置于栅极34和源极31之间的有源层(未示出)。如图2和图4所示，源极31具有第一开口311和第二开口312，第一漏极32与第一扩展电极11电性连接并延伸至第一开口311内，第二漏极33与第二扩展电极12电性连接并延伸至第二开口312内。
本实用新型实施例中，源极31具有第一开口311和第二开口312，与第一漏极32和第二漏极33形成的沟道区域的宽长比增加，可以提高TFT 3的驱动能；第一像素电极1和第二像素电极2具有分别朝向对方延伸的扩展电极，第一漏极32和第二漏极33分别与相对应的扩展电极电性连接；有效利用第一像素电极1和第二像素电极2之间的区域，使第一漏极32和第二漏极33不会占用亚像素单元的显示区域，从而实现提高TFT 3的驱动能力的同时，提高亚像素单元的像素开口率。
根据源极31、第一漏极32和第二漏极33的形状、位置的不同，可以得到多种具体的像素结构100，说明如下：
如图1所示的像素结构100，其源极31、第一漏极32和第二漏极33的放大示意图如图2，其中，源极31为S型，第一开口311和第二开口312的朝向相反，第一漏极32和第二漏极33位于源极31的不同侧。当然，第一像素电极1的第一扩展电极11和第二像素电极2的第二扩展电极12也可以变型，并结合图1所示的像素结构100，得到如图5(与图1中附图标记含义相同)所示的像素结构100。
如图3所示的像素结构100，其源极31、第一漏极32和第二漏极33的放大示意图如图4，其中，源极31为M型，第一开口311和第二开口312的朝向相同，第一漏极32和第二漏极33位于源极31的同一侧。
第一开口311和第二开口312的开口方向可以灵活选择，以便适应第一漏极32和第二漏极33的朝向、形状等条件。优选的，第一开口311和第二开口312的开口方向与列方向垂直，从而使简化设计。
优选的，第一扩展电极11、第二扩展电极12和栅极34的垂直投影无交叠区域。本实用新型实施例提供的像素结构应用于阵列基板时，栅极34与第一扩展电极11和第二扩展电极12之间不会产生寄生电容。
优选的，第一漏极32和第一扩展电极11通过过孔电性连接，第二漏极33和第二扩展电极12通过过孔电性连接。
本实用新型实施例的有益效果如下：第一像素电极和第二像素电极具有分别朝向对方延伸的扩展电极，第一漏极和第二漏极分别与相对应的扩展电极电性连接；第一像素电极和第二像素电极可以由各自与像素电极的连接处沿水平方向延伸至对应的开口内，可以使TFT具有较大的面积，即提高TFT的驱动能力；通过上述设计有效利用第一像素电极和第二像素电极之间的区域，使第一漏极和第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
参见图6和图7，本实用新型实施例提供一种阵列基板200，包括形成于衬底基板201上的亚像素单元阵列，亚像素单元具有如上实施例提供的像素结构100。
优选的，属于同一行的亚像素单元的第一像素电极1和第二像素电极2之间设置一条折线形的栅线202，栅线202连接该行全部亚像素单元的栅极34，相邻的两列亚像素单元之间设置有一条数据线203。需要说明的是，本实施例中数据线203的设置仅是为了进行说明，本实用新型并不以此为限。
第一漏极32、第二漏极33、第一扩展电极11和第二扩展电极21在衬底基板201上的垂直投影与栅线202在衬底基板201上的垂直投影无交叠区域。
优选的，属于同一行的亚像素单元的第一像素电极1和第二像素电极2之间设置第一公共电极线204和第二公共电极线205，第一公共电极线204靠近第一像素电极1，第一公共电极线204和第二公共电极线205分别包括朝向对方延伸的扩展部，如第一公共电极线204的扩展部2041，第二公共电极线205的扩展部2051。第一公共电极线204的扩展部2041的垂直投影和第一扩展电极11在衬底基板201上的垂直投影部分交叠或完全交叠，第二公共电极线205的扩展部2051的垂直投影和第二扩展电极21在衬底基板201上的垂直投影部分交叠或完全交叠。
优选的，第一公共电极线204在衬底基板201上的垂直投影与栅线202和栅极34在衬底基板201上的垂直投影无交叠，第二公共电极线205在衬底基板201上的垂直投影与栅线202和栅极34在衬底基板201上的垂直投影无交叠。
需要说明的是，本实用新型提供的像素结构包括两个子像素电极(例如：第一像素电极1和第二像素电极2)，也可以根据像素该结构进行变型，使像素结构包括三个、四个或更多个子像素电极。当然，包括多个子像素电极的像素结构应该满足如下条件：包括多个子像素电极的该像素该结构的多个漏极分别与多个子像素电极的扩展电极连接，依据各漏极与各扩展电极的连接处设计源极，且各漏极与各扩展电极的连接处均与栅线的垂直投影不重叠。在此不再赘述。
本实用新型实施例有益效果如下：第一像素电极和第二像素电极具有分别朝向对方延伸的扩展电极，第一漏极和第二漏极分别与相对应的扩展电极电性连接；源极具有所述第一开口和所述第二开口，第一像素电极和第二像素电极可以由各自与像素电极的连接处沿水平方向延伸至对应的开口内，可以使TFT具有较大的面积，即提高TFT的驱动能力；通过上述设计有效利用第一像素电极和第二像素电极之间的区域，使第一漏极和第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
本实用新型实施例提供一种显示面板，包括上实施例提供的阵列基板。
本实用新型实施例有益效果如下：第一像素电极和第二像素电极具有分别朝向对方延伸的扩展电极，第一漏极和第二漏极分别与相对应的扩展电极电性连接；源极具有所述第一开口和所述第二开口，第一像素电极和第二像素电极可以由各自与像素电极的连接处沿水平方向延伸至对应的开口内，可以使TFT具有较大的面积，即提高TFT的驱动能力；通过上述设计有效利用第一像素电极和第二像素电极之间的区域，使第一漏极和第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
本实用新型实施例提供一种显示装置，包括上实施例提供的显示面板。
本实用新型实施例有益效果如下：第一像素电极和第二像素电极具有分别朝向对方延伸的扩展电极，第一漏极和第二漏极分别与相对应的扩展电极电性连接；源极具有所述第一开口和所述第二开口，第一像素电极和第二像素电极可以由各自与像素电极的连接处沿水平方向延伸至对应的开口内，可以使TFT具有较大的面积，即提高TFT的驱动能力；通过上述设计有效利用第一像素电极和第二像素电极之间的区域，使第一漏极和第二漏极不会占用亚像素单元的显示区域，从而实现提高TFT的驱动能力的同时，提高亚像素单元的像素开口率。
显然，本领域的技术人员可以对本实用新型进行各种改动和变型而不脱离本实用新型的精神和范围。这样，倘若本实用新型的这些修改和变型属于本实用新型权利要求及其等同技术的范围之内，则本实用新型也意图包含这些改动和变型在内。

Claims (11)

1.一种像素结构，其特征在于，包括沿列方向排布的第一像素电极和第二像素电极、设置于所述第一像素电极和第二像素电极之间的薄膜晶体管TFT；
所述第一像素电极具有朝向所述第二像素电极延伸的第一扩展电极，所述第二像素电极具有朝向所述第一像素电极延伸的第二扩展电极；
所述TFT包括彼此绝缘的栅极、源极、第一漏极和第二漏极；所述源极具有第一开口和第二开口，所述第一漏极与所述第一扩展电极电性连接并延伸至所述第一开口内，所述第二漏极与所述第二扩展电极电性连接并延伸至所述第二开口内。
2.如权利要求1所述的像素结构，其特征在于，所述源极为S型，所述第一开口和所述第二开口的朝向相反，所述第一漏极和所述第二漏极位于所述源极的不同侧。
3.如权利要求1所述的像素结构，其特征在于，所述源极为M型，所述第一开口和所述第二开口的朝向相同，所述第一漏极和所述第二漏极位于所述源极的同一侧。
4.如权利要求1至3任一项所述的像素结构，其特征在于，所述第一开口和所述第二开口的开口方向与列方向垂直。
5.如权利要求1至3任一项所述的像素结构，其特征在于，所述第一扩展电极、所述第二扩展电极和所述栅极的垂直投影无交叠区域。
6.一种阵列基板，包括形成于衬底基板上的亚像素单元阵列，其特征在于，所述亚像素单元具有如权利要求1至5任一项所述的像素结构。
7.如权利要求6所述的阵列基板，其特征在于，属于同一行的所述亚像素单元的所述第一像素电极和所述第二像素电极之间设置一条折线形的栅线，所述栅线连接该行全部所述亚像素单元的栅极，所述第一漏极、所述第二漏极、所述第一扩展电极和所述第二扩展电极在所述衬底基板上的垂直投影与所述栅线在所述衬底基板上的垂直投影无交叠区域。
8.如权利要求7所述的阵列基板，其特征在于，属于同一行的所述亚像素单元的所述第一像素电极和所述第二像素电极之间设置第一公共电极线和第二公共电极线，所述第一公共电极线靠近所述第一像素电极，所述第一公共电极线和所述第二公共电极线分别包括朝向对方延伸的扩展部，所述第一公共电极线的扩展部的垂直投影和所述第一扩展电极在所述衬底基板上的垂直投影部分交叠或完全交叠，所述第二公共电极线的扩展部的垂直投影和所述第二扩展电极在所述衬底基板上的垂直投影部分交叠或完全交叠。
9.如权利要求8所述的阵列基板，其特征在于，所述第一公共电极线在所述衬底基板上的垂直投影与所述栅线和所述栅极在所述衬底基板上的垂直投影无交叠，所述第二公共电极线在所述衬底基板上的垂直投影与所述栅线和所述栅极在所述衬底基板上的垂直投影无交叠。
10.一种显示面板，其特征在于，包括如权利要求6至9任一项所述的阵列基板。
11.一种显示装置，其特征在于，包括如权利要求10所述的显示面板。
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