CN202423254U - 一种加强型整流二极管 - Google Patents

一种加强型整流二极管 Download PDF

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Publication number
CN202423254U
CN202423254U CN2011205500250U CN201120550025U CN202423254U CN 202423254 U CN202423254 U CN 202423254U CN 2011205500250 U CN2011205500250 U CN 2011205500250U CN 201120550025 U CN201120550025 U CN 201120550025U CN 202423254 U CN202423254 U CN 202423254U
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rectifier diode
epoxy resin
reinforced
resin plastic
chip
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CN2011205500250U
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周涛
王兴龙
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Chongqing Pingwei Enterprise Co Ltd
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Chongqing Pingwei Enterprise Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本实用新型公开了一种加强型整流二极管，涉及一种整流器件整流二极管，包括AT边框，所述AT边框由固定块和上芯块一体成型组成，所述上芯块上焊接有芯片，所述芯片与跳线的一端焊接，所述跳线的另一端与引脚焊接，所述芯片、跳线封装在环氧树脂塑封体内，所述上芯块与固定块连接处还设有通孔，所述环氧树脂塑封体填满所述通孔,本实用新型通过增大环氧树脂塑封体与框架的接触面积，从而提高了环氧树脂塑封体与框架之间的牢固度，使本实用新型更加结实耐用，减小了环氧树脂塑封体与框架分裂致使产品电性受到影响甚至失效。

Description

一种加强型整流二极管
技术领域
本实用新型涉及一种整流器件整流二极管，特别是涉及一种牢固的整流二极管。 
背景技术
现有技术中整流二极管AT边框的上芯块通常为长方体，环氧树脂塑封体与框架间的接触面积小，导致环氧树脂塑封体与框架之间的牢固度较差，在安装在电路板时容易造成环氧树脂塑封体与框架分裂致使产品电性受到影响甚至失效。 
因此本领域技术人员致力于开发一种提高环氧树脂塑封体与框架之间牢固度的整流二极管。 
实用新型内容
有鉴于现有技术的上述缺陷，本实用新型所要解决的技术问题是提供一种提高环氧树脂塑封体与框架之间牢固度的整流二极管。 
为实现上述目的，本实用新型提供了一种加强型整流二极管，包括AT边框；所述AT边框由固定块和上芯块一体成型组成；所述上芯块上焊接有芯片；所述芯片与跳线的一端焊接；所述跳线的另一端与引脚焊接；所述芯片、跳线封装在环氧树脂塑封体内；所述上芯块与固定块连接处还设有通孔，所述环氧树脂塑封体填满所述通孔。 
较佳的，所述通孔的横截面为平行四边形。 
较佳的，所述跳线为铝线。 
本实用新型的有益效果是：本实用新型通过增大环氧树脂塑封体与框架的接触面积，从而提高了环氧树脂塑封体与框架之间的牢固度，使本实用新型更加结实耐用，减小了环氧树脂塑封体与框架分裂致使产品电性受到影响甚至失效。 
附图说明
图1是本实用新型的正面剖视图。 
具体实施方式
下面结合附图和实施例对本实用新型作进一步说明： 
如图1所示，一种加强型整流二极管，包括AT边框，所述AT边框由固定块1和上芯块2一体成型组成，所述上芯块2上焊接有芯片3，所述芯片3与跳线4的一端焊接，所述跳线4的另一端与引脚5焊接，所述芯片3、跳线4采用TO-220形式封装在环氧树脂塑封体6内，所述上芯块2与固定块1连接处还设有通孔7，所述环氧树脂塑封体6填满所述通孔7，所述通孔7的横截面为平行四边形，所述跳线4为铝线。
封装时环氧树脂塑封料将通孔7填满，由于环氧树脂塑封体6与框架的接触面积增大，从而提高了环氧树脂塑封体6与框架之间的牢固度。 
以上详细描述了本实用新型的较佳具体实施例。应当理解，本领域的普通技术人员无需创造性劳动就可以根据本实用新型的构思作出诸多修改和变化。因此，凡本技术领域中技术人员依本实用新型的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。 

Claims (3)

1.一种加强型整流二极管，包括AT边框；所述AT边框由固定块（1）和上芯块（2）一体成型组成；所述上芯块（2）上焊接有芯片（3）；所述芯片（3）与跳线（4）的一端焊接；所述跳线（4）的另一端与引脚（5）焊接；所述芯片（3）、跳线（4）封装在环氧树脂塑封体（6）内；其特征在于：所述上芯块（2）与固定块（1）连接处还设有通孔（7）；所述环氧树脂塑封体（6）填满所述通孔（7）。
2.如权利要求1所述的一种加强型整流二极管，其特征是：所述通孔（7）的横截面为平行四边形。
3.如权利要求1所述的一种加强型整流二极管，其特征是：所述跳线（4）为铝线。
CN2011205500250U 2011-12-26 2011-12-26 一种加强型整流二极管 Expired - Lifetime CN202423254U (zh)

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CN202423254U true CN202423254U (zh) 2012-09-05

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Granted publication date: 20120905