CN201893332U - 一种玻璃钝化高压半导体整流器 - Google Patents

一种玻璃钝化高压半导体整流器 Download PDF

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Publication number
CN201893332U
CN201893332U CN2010205639023U CN201020563902U CN201893332U CN 201893332 U CN201893332 U CN 201893332U CN 2010205639023 U CN2010205639023 U CN 2010205639023U CN 201020563902 U CN201020563902 U CN 201020563902U CN 201893332 U CN201893332 U CN 201893332U
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lead
rectifier
chip
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张鹏
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Chongqing Pingwei Enterprise Co Ltd
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Chongqing Pingwei Enterprise Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本实用新型公开了一种玻璃钝化高压半导体整流器，该整流器由玻璃钝化芯片、两钉头引线、环氧塑封体组成；钉头引线端面上有凸起的圆台，玻璃钝化芯片位于两钉头引线端面之间，通过焊料与钉头引线端面上的圆台焊接，整个玻璃钝化高压半导体整流器除两钉头引线的另一端头外，其余部分均包裹在环氧树脂注塑成的塑封体内。本实用新型的有益效果是：不仅提高了产出率、产品的电性良率，而且提高了产品的稳定性、可靠性能。

Description

一种玻璃钝化高压半导体整流器
技术领域
本实用新型涉及一种半导体器件，特别涉及一种玻璃钝化高压半导体整流器。
背景技术
目前，随着客户产品使用环境温度的提高，相应的对整流器件的结温也有更高的要求。为此，许多厂家均采用玻璃钝化的芯片来取代酸洗上白胶的芯片，但没有相应的将双平头引线改为双钉头引线，这样致焊锡压到芯片玻璃层的机会增大，产出率较低，产品的可靠性能较差。
实用新型内容
本实用新型公开了一种玻璃钝化高压半导体整流器，解决了上述问题。本实用新型所采用的技术方案是：一种玻璃钝化高压半导体整流器，该整流器由玻璃钝化芯片、两钉头引线、环氧塑封体组成；钉头引线端面上有凸起的圆台，玻璃钝化芯片位于两钉头引线端面之间，通过焊料与钉头引线端面上的圆台焊接，整个玻璃钝化高压半导体整流器除两钉头引线的另一端头外，其余部分均包裹在环氧树脂注塑成的塑封体内。
其中，所述圆台与玻璃钝化芯片接触的底面直径小于玻璃钝化芯片的焊接面的内切圆直径。
本实用新型的有益效果是：不仅提高了产出率、产品的电性良率，而且提高了产品的稳定性、可靠性能。
附图说明
图1为本实用新型结构示意图。
具体实施方式
下面结合附图和具体实施方式对本实用新型做进一步说明。
参阅图1，种玻璃钝化高压半导体整流器，该整流器由玻璃钝化芯片3、两钉头引线4、环氧塑封体1组成；钉头引线端面上有凸起的圆台401，玻璃钝化芯片3位于两钉头引线4端面之间，通过焊料与钉头引线4端面上的圆台401焊接，两者之间形成焊料层2，整个玻璃钝化高压半导体整流器除两钉头引线4的另一端头外，其余部分均包裹在环氧树脂注塑成的塑封体1内。钉头引线4的端头为其与玻璃钝化芯片3焊接的端面对应的另一端。
其中，在现有平头引线端面中央设计一个圆台401，圆台401与玻璃钝化硅芯片接触的底面其直径小于玻璃钝化芯片3的焊接面的内切圆直径，我们将这种引线称为钉头引线。该结构产品在高温条件下，其焊接组件铜引线、焊料、玻璃钝化芯片不会受热膨胀的原因而致焊锡压到玻璃钝化芯片的保护环上，大大提高了产品的产出良率及可靠性能。

Claims (2)

1.一种玻璃钝化高压半导体整流器，其特征在于：该整流器由玻璃钝化芯片、两钉头引线、环氧塑封体组成；钉头引线端面上有凸起的圆台，玻璃钝化芯片位于两钉头引线端面之间，通过焊料与钉头引线端面上的圆台焊接，整个玻璃钝化高压半导体整流器除两钉头引线的另一端头外，其余部分均包裹在环氧树脂注塑成的塑封体内。
2.根据权利要求1所述一种玻璃钝化高压半导体整流器，其特征在于：所述圆台与玻璃钝化芯片接触的底面直径小于玻璃钝化芯片的焊接面的内切圆直径。
CN2010205639023U 2010-10-18 2010-10-18 一种玻璃钝化高压半导体整流器 Expired - Lifetime CN201893332U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111987067A (zh) * 2020-07-30 2020-11-24 吉林华微电子股份有限公司 器件引线组件及半导体器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111987067A (zh) * 2020-07-30 2020-11-24 吉林华微电子股份有限公司 器件引线组件及半导体器件

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