CN109216311A - 一种低功耗to-277封装超薄型二极管及其制造方法 - Google Patents
一种低功耗to-277封装超薄型二极管及其制造方法 Download PDFInfo
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Abstract
本发明提供一种低功耗TO‑277封装超薄型二极管,包括黑胶塑封体、芯片、料片、跳线、焊锡及引脚镀锡,所述芯片、焊锡、跳线和部分料片封装在所述黑胶塑封体内,所述料片部分作为引脚延伸到黑胶塑封体外,引脚表面镀锡后便于焊接使用;所述黑胶塑封体的横截面为等腰梯形,所述黑胶塑封体的高度为1.1mm,所述引脚为直线状并与塑封体的下表面在一条直线上。整体封装厚度较现有封装能减少40%以上;产品采用低正向电压芯片,可有效降低功率损耗20%,满足六级能效要求;生产工序中剔除了弯脚成型的工序,直接将引脚切断即可,既去除掉了弯脚产生的应力,也不会造成翘脚等不良状况,保证了产品品质;采用矩阵式料片设计,成型工序简便,提升生产效率,降低生产成本。
Description
技术领域
本发明涉及一种封装超薄型二极管,尤其涉及一种低功耗TO-277封装超薄型二极管及其制造方法,属于半导体电子元器件领域。
背景技术
随着半导体技术向着高密度高集成化的方向发展,电子产品已经越做越小,越做越 薄,半导体器件随着电子产品的发展也在朝着小型化、扁平化方向发展,以适用各种不同产 品的需求。目前市场常规产品本体厚度较厚,占用空间大,已经无法跟上市场的变化。二极 管的主要作用是将线路中的交流电转换成直流电,工作过程中由于自身功率消耗易产生较高 的温度,影响产品的使用寿命及可靠性。低功耗TO-277封装超薄型二极管采用低正向电压芯 片,较常规产品正向电压低0.1V,在工作状态下,可有效降低自身功耗。产品采用底部平脚 的超薄型外形设计,产品厚度仅1.1mm,大大降低了产品封装高度,同时TO-277封装可通过 背面与线路板焊接,达到较好的散热目的。在国家大力推广节能减排、降低能耗的背景下, 低功耗TO-277封装超薄型二极管可满足六级能耗要求。
发明内容
本发明的目的在于提供一种低功耗TO-277封装超薄型二极管,在现有线路板的基础上使用,可有效降低终端产品的厚度,且由于自身正向导通电压较低,在工作过程中可降低自身功耗,达到节能减排的目的。
本发明提供一种低功耗TO-277封装超薄型二极管,包括黑胶塑封体、芯片、料片、跳线、焊锡及引脚镀锡,所述芯片、焊锡、跳线和部分料片封装在所述黑胶塑封体内,所述料片部分作为引脚延伸到黑胶塑封体外,引脚表面镀锡后便于焊接使用,所述黑胶塑封体的 横截面为等腰梯形,所述黑胶塑封体的高度为1.1mm,所述引脚为直线状并与塑封体的下表 面在一条直线上。
所述塑封体为环氧树脂黑胶材料,其导热系数约0.4-0.8,用于保护内部芯片,并具有绝缘、散热作用。
所述塑封体的高度为1.1mm。
所述芯片与所述料片之间设有锡层,所述料片与所述引脚一体成型。
所述跳线作为导线内部连接芯片和料片引脚。
所述引脚镀锡方便客户将产品焊接在线路板上。
一种低功耗TO-277封装超薄型二极管及其制造方法,其特征在于:包括以下步骤:
第一步,焊接:将料片、芯片、跳线以及锡层通过高温焊接,焊接过程中需开启氮气保护,防止产品高温氧化造成焊接不良,影响产品品质;其中,焊接峰值温度不超过360℃,一般在340~350℃左右;氮气流量在10~20立方米每小时。
第二步,模压:将环氧树脂黑胶包覆在已和料片焊锡好的芯片的周围,压模成塑封体,所述塑封体的横截面为等腰梯形,所述塑封体的高度为1.1mm,黑胶能使其具有绝缘性,并可承受一定的应力,以免伤害到芯片使其失效,还具有散热作用;模压的温度在180℃左右。
第三步,镀锡:在引脚部分镀上一层锡层;
第四步,切断:将引脚连接部分切掉,使引脚与塑封体的下表面平齐。
优选地,在第二步模压后要进行模压检验,模压检验主要是针对产品的模压外观进行检验, 确保在模压过程中生产设备的相关参数符合作业规范的要求,塑封后的产品外观符合最终产 品的要求。
本发明与现有技术相比具有以下优点:
(1)本发明整体封装厚度较现有封装厚度减少40%以上;
(2)本发明采用低正向电压芯片,有效降低功率损耗20%,满足六级能效要求;
(3)本发明生产工序中剔除了弯脚成型的工序,直接将引脚切断即可,既去除掉了弯脚产生的应力,也解决了翘脚等不良状况,保证了产品品质;
(4)本发明采用矩阵式料片设计,成型工序简便,提升生产效率,降低生产成本。
具体实施方式
以下由特定的具体实施例说明本发明的实施方式,熟悉此技术的人士可由本说明书 所揭露的内容轻易地了解本发明的其他优点及功效。
本发明提供一种低功耗TO-277封装超薄型二极管产品,图1为本发明的低功耗TO-277封装超薄型二极管产品的示图,01-塑封体,02-芯片,03-焊锡,04-料片,05- 跳线,06-镀锡。图2为本发明的低功耗TO-277封装超薄型二极管产品的矩阵料片示图。 所述芯片、焊锡、跳线和部分料片封装在所述黑胶塑封体内,所述料片部分作为引脚延伸到 黑胶塑封体外,引脚表面镀锡后便于焊接使用,所述黑胶塑封体的横截面为等腰梯形,所述 黑胶塑封体的高度为1.1mm,所述引脚为直线状并与塑封体的下表面在一条直线上。
在本实施例中,所述芯片02与所述料片04之间设有锡层03,所述料片04与所述 引脚一体成型。
在本实施例中,所述跳线05作为导线内部连接芯片02和料片引脚。
在本实施例中,所述引脚镀锡06,方便客户将产品焊接在线路板上
一种低功耗TO-277封装超薄型二极管,其生产步骤包括:
第一步,焊接:将料片04、芯片02以及锡层03通过高温焊接,焊接过程中需开启氮气 保护,防止产品高温氧化造成焊接不良,影响产品品质;
第二步,模压:将环氧树脂黑胶包覆在已和料片04焊锡好的芯片02的周围,压模成塑封体01,所述塑封体01的横截面为等腰梯形,所述塑封体01的高度为1.1mm,黑胶能使其 具有绝缘性,并可承受一定的应力,以免伤害到芯片使其失效,还具有散热作用;
第三步,镀锡:在引脚部分镀上一层锡层06;
第四步,切断:将引脚连接部分切掉,使引脚与塑封体01的下表面平齐。
在本实施例中,在第二步模压后要进行模压检验。
其中环氧树脂黑胶主要作用为保护内部芯片02,并具有绝缘作用;芯片02主要作用为呈现二极管的电气性能;焊锡03主要作用为连接料片04与芯片02;料片04用于连接芯片 02和外部线路,镀锡06主要作用为方便客户将产品焊接在线路板上。保留现有产品内部芯 片02尺寸的基础上,将产品结构进行调整,从而降低了产品厚度,较现有常规产品本体厚度减少40%以上;产品采用低正向电压芯片02,可有效降低功率损耗20%,满足六级能效要求; 生产工序中剔除了弯脚成型的工序,直接将引脚切断即可,既去除掉了弯脚产生的应力,也 不会造成翘脚等不良状况,保证了产品品质;采用矩阵式料片04设计,成型工序简便,提升 生产效率,降低生产成本。
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉 此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此, 举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一 切等效修饰或改变,仍应由本发明的权利要求所涵盖。
本发明说明书中未作详细描述的内容属于本领域专业技术人员公知技术。
本发明不局限于权利要求和具体实施例所述及的保护内容,只要是根据本发 明的构思所作出的任何发明,都属于本发明的保护范围之内。
Claims (7)
1.一种低功耗TO-277封装超薄型二极管及其制造方法,其特征在于:包括塑封体、芯片、料片、跳线、焊锡及引脚镀锡,所述芯片、焊锡、跳线和部分料片封装在所述塑黑胶封体内,所述料片部分作为引脚延伸到黑胶塑封体外,引脚表面镀锡后便于焊接使用,所述黑胶塑封体的横截面为等腰梯形,所述黑胶塑封体的高度为1.1mm,所述引脚为直线状并与塑封体的下表面在一条直线上。
2.根据权利要求1所述的一种低功耗TO-277封装超薄型二极管及其制造方法,其特征在于:所述黑胶塑封体为环氧树脂黑胶材料,其导热系数约0.4-0.8。
3.根据权利要求1所述的一种低功耗TO-277封装超薄型二极管及其制造方法,其特征在于:所述塑封体的高度为1.1mm。
4.根据权利要求1所述的一种低功耗TO-277封装超薄型二极管及其制造方法,其特征在于:所述芯片与所述料片之间设有锡层,所述料片与所述引脚一体成型。
5.根据权利要求1所述的一种低功耗TO-277封装超薄型二极管及其制造方法,其特征在于:所述跳线作为导线内部连接芯片和料片引脚。
6.根据权利要求1所述的一种低功耗TO-277封装超薄型二极管及其制造方法,其特征在于:所述镀锡主要作用为方便客户将产品焊接在线路板上。
7.一种低功耗TO-277封装超薄型二极管,其特征在于:
第一步,焊接:将料片、芯片、跳线以及锡层通过高温焊接,焊接过程中需开启氮气保护,防止产品高温氧化造成焊接不良,影响产品品质;其中,焊接峰值温度不超过360℃,一般在340~350℃左右;氮气流量在10~20立方米每小时。
第二步,模压:将环氧树脂黑胶包覆在已和料片焊锡好的芯片的周围,压模成塑封体,所述黑胶塑封体的横截面为等腰梯形,所述黑胶塑封体的高度为1.1mm,黑胶能使其具有绝缘性,并可承受一定的应力,以免伤害到芯片使其失效,还具有散热作用;模压的温度在180℃左右。
第三步,镀锡:在引脚部分镀上一层锡层;
第四步,切断:将引脚连接部分切掉,使引脚与塑封体的下表面平齐。
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