CN204497239U - 金属封装大电流、高电压、快恢复二极管 - Google Patents
金属封装大电流、高电压、快恢复二极管 Download PDFInfo
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- CN204497239U CN204497239U CN201520264919.1U CN201520264919U CN204497239U CN 204497239 U CN204497239 U CN 204497239U CN 201520264919 U CN201520264919 U CN 201520264919U CN 204497239 U CN204497239 U CN 204497239U
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- copper
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- fast recovery
- recovery diode
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- 238000011084 recovery Methods 0.000 title claims abstract description 19
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 32
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000007704 transition Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 10
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims abstract description 9
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49431—Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Abstract
一种具有大电流输出能力,散热性能好,可靠性高的能降低正向压降的金属封装大电流、高电压、快恢复二极管,包括金属外壳,其特殊之处是:所述金属外壳是由钨铜底板和铁镍合金边框封装构成,在钨铜底板上烧结有氧化铍陶瓷基片,在铁镍合金边框上设有由直径为1.1毫米~1.3毫米的无氧铜构成的大电流输出引线,所述大电流输出引线为无氧铜线,在氧化铍陶瓷基片上设有钨铜过渡片、铜可伐银片,在钨铜过渡片上烧结有快恢复二极管芯片,在钨铜过渡片和大电流输出引线之间连接有连接铜带,快恢复二极管芯片与铜可伐银片之间采用金属丝键合互连。
Description
技术领域
本实用型涉及一种金属封装大电流、高电压、快恢复二极管。
背景技术
大部分大电流、高电压、快恢复二极管一般以塑封结构为主,抗盐雾腐蚀能力较差,工作温度范围一般在-40℃~+85℃,产品的整体质量与可靠性均相对较低。而普通金属封装的电流能力一般较差,无法与同类的塑封结构的产品相媲美。尤其是实现大电流、高电压、快恢复等功能存在一定困难。
实用新型内容
本实用新型要解决的技术问题是提供一种具有大电流输出能力,散热性能好,可靠性高的能降低正向压降的金属封装大电流、高电压、快恢复二极管。
本实用新型涉及的金属封装大电流、高电压、快恢复二极管,包括金属外壳,其特殊之处是:所述金属外壳是由钨铜底板和铁镍合金边框封装构成,在钨铜底板上烧结有氧化铍陶瓷基片,在铁镍合金边框上设有由直径为1.1毫米~1.3毫米的无氧铜构成的大电流输出引线,所述大电流输出引线为无氧铜线,在氧化铍陶瓷基片上设有钨铜过渡片、铜可伐银片,在钨铜过渡片上烧结有快恢复二极管芯片,在钨铜过渡片和大电流输出引线之间连接有连接铜带,快恢复二极管芯片与铜可伐银片之间采用金属丝键合互连。
进一步的,在所述连接铜带上对应其与大电流输出引线连接一端设有连接铜柱,所述连接铜柱穿过并连接在大电流输出引线上。
本实用新型的有益效果是:采用钨铜过渡片、铜可伐银片和由1.1毫米~1.3毫米的无氧铜构成的外引线,保证了产品的大电流输出能力,降低了产品的正向压降数值;金属外壳采用钨铜底板,陶瓷基片采用氧化铍陶瓷基片,两者具有热导率高、热匹配性好的特点,使产品具有更优越的散热性能与可靠性水平;二极管芯片与钨铜过渡片之间烧结,减小了芯片的烧结空洞率,提高了产品的过流能力;大电流输出引线与钨铜过渡片之间采用连接铜带连接,使芯片与大电流输出引线之间连接形成的电阻损耗降到最低,保证了产品整体的大电流输出能力,降低了产品整体的正向压降数值;工作温度范围可达到-55℃~+125℃,环境适应性强、可靠性水平高。
附图说明
图1是本实用新型的结构示意图。
图2是是图1(去掉管帽)的俯视图。
图中:1-钨铜底板、2-铁镍合金边框、3-陶瓷基片、4-大电流输出引线、5-绝缘子、6-钨铜过渡片、7-铜可伐银片、8-连接铜柱、9-连接铜带、10-快恢复二极管芯片、11-金属丝。
具体实施方式
如图所示,本实用新型包括金属外壳,所述金属外壳是由钨铜底板1和铁镍合金边框2封装而成,在钨铜底板1上烧结有氧化铍陶瓷基片3,在铁镍合金边框2设有由直径为1.1毫米~1.3毫米的无氧铜线构成的大电流输出引线4,大电流输出引线4与铁镍合金边框2之通过绝缘子5绝缘,在氧化铍陶瓷基片3上设有钨铜过渡片6、铜可伐银片7,在钨铜过渡片6上采用合金焊料通过真空烧结焊接有快恢复二极管芯片10,在钨铜过渡片6上还设有连接铜带9,连接铜带9上烧结有连接铜柱8,所述连接铜柱8穿过并连接在大电流输出引线4上,快恢复二极管芯片10与铜可伐银片7之间采用金属丝11键合互连。
以上仅为本实用新型的具体实施例而已,并不用于限制本实用新型,对于本领域的技术人员来说,本实用新型可以有各种更改和变化。凡在本实用新型的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。
Claims (2)
1.一种金属封装大电流、高电压、快恢复二极管,包括金属外壳,其特征是:所述金属外壳是由钨铜底板和铁镍合金边框封装构成,在钨铜底板上烧结有氧化铍陶瓷基片,在铁镍合金边框上设有由直径为1.1毫米~1.3毫米的无氧铜构成的大电流输出引线,所述大电流输出引线为无氧铜线,在氧化铍陶瓷基片上设有钨铜过渡片、铜可伐银片,在钨铜过渡片上烧结有快恢复二极管芯片,在钨铜过渡片和大电流输出引线之间连接有连接铜带,快恢复二极管芯片与铜可伐银片之间采用金属丝键合互连。
2.根据权利要求1所述的金属封装大电流、高电压、快恢复二极管,其特征是:在所述连接铜带上对应其与大电流输出引线连接一端设有连接铜柱,所述连接铜柱穿过并连接在大电流输出引线上。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105226030A (zh) * | 2015-10-13 | 2016-01-06 | 济南市半导体元件实验所 | 高压大功率碳化硅二极管封装结构及封装工艺 |
CN107068620A (zh) * | 2017-06-02 | 2017-08-18 | 朝阳无线电元件有限责任公司 | 一种to金属陶瓷管壳结构 |
CN107623045A (zh) * | 2017-09-30 | 2018-01-23 | 绍兴上虞欧菲光电科技有限公司 | 一种二极管 |
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2015
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105226030A (zh) * | 2015-10-13 | 2016-01-06 | 济南市半导体元件实验所 | 高压大功率碳化硅二极管封装结构及封装工艺 |
CN105226030B (zh) * | 2015-10-13 | 2018-12-18 | 济南市半导体元件实验所 | 高压大功率碳化硅二极管封装结构及封装工艺 |
CN107068620A (zh) * | 2017-06-02 | 2017-08-18 | 朝阳无线电元件有限责任公司 | 一种to金属陶瓷管壳结构 |
CN107068620B (zh) * | 2017-06-02 | 2019-10-25 | 朝阳无线电元件有限责任公司 | 一种to金属陶瓷管壳结构 |
CN107623045A (zh) * | 2017-09-30 | 2018-01-23 | 绍兴上虞欧菲光电科技有限公司 | 一种二极管 |
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Address after: 121000 No. 58, Songshan street, Taihe District, Jinzhou City, Liaoning Province Patentee after: Jinzhou Liaojing Electronic Technology Co.,Ltd. Address before: 121000 No. five, section 10, Renmin Street, Guta District, Liaoning, Jinzhou Patentee before: JINZHOU LIAOJING ELECTRONIC TECHNOLOGY CO.,LTD. |