CN201319374Y - 一种用超声波铜线制造集成电路芯片封装结构 - Google Patents
一种用超声波铜线制造集成电路芯片封装结构 Download PDFInfo
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Abstract
本实用新型公开了一种用超声波铜线制造集成电路芯片封装结构,包括封装在塑封体内的金属框架、芯片、铜线,在所述金属框架上设有衬底区和引脚区,其中,进一步包括导电层,所述导电层设在所述衬底区和引脚区,所述芯片固定在所述衬底区的导电层上,所述芯片的表面具有金属化焊盘,所述金属化焊盘的厚度大于等于3μm,所述铜线的一端球焊在所述金属化焊盘上,另一端压焊在所述引脚区的导电层上。本实用新型通过增加芯片金属化焊盘的厚度,使金属化焊盘能够承受更大的超声能量和键合压力,从而保证焊接质量;另,采用铜线作为球焊引线,因而有利于降低封装成本,更节约了贵金属资源。
Description
技术领域
本实用新型涉及封装技术领域,尤其是涉及一种用超声波铜线制造集成电路芯片封装结构。
背景技术
球焊是集成电路引线键合中最具代表性的焊接技术。它是在一定的温度下,对键合劈刀施加压力,同时加载超声振动,将烧成球形的引线一端键合在芯片的金属化焊盘上,另一端键合到引线框架上,实现芯片内部电路与外围电路的电连接。由于球焊操作方便、灵活,而且焊点牢固,无方向性,故可实现高速自动化焊接。
传统的球焊引线是采用高纯金。随着集成电路封装密度的增加,引线数增多,而市场行情却要求封装成本更低。在金线用量增大,金线价格上升的情况下,封装成本亦会相应的增加。这一难题成为集成电路封装业的瓶颈。
实用新型内容
本实用新型实施例主要解决的技术问题在于提供一种可降低成本的用超声波铜线制造集成电路芯片封装结构。
为解决上述问题,本实用新型采用如下结构:一种用超声波铜线制造集成电路芯片封装结构,包括封装在塑封体内的金属框架、芯片、铜线,在所述金属框架上设有衬底区和引脚区,其中,进一步包括导电层,所述导电层设在所述衬底区和引脚区,所述芯片固定在所述衬底区的导电层上,所述芯片的表面具有金属化焊盘,所述金属化焊盘的厚度大于等于3μm,所述铜线的一端球焊在所述金属化焊盘上,另一端压焊在所述引脚区的导电层上。
在所述金属框架上设有至少二散热片,所述散热片对称排列在所述金属框架引脚区的引脚之间。
进一步包括一银胶层,所述银胶层设在所述衬底区的导电层与所述芯片之间。
所述导电层为镀银层。
本实用新型一种用超声波铜线制造集成电路芯片封装结构中金属化焊盘的厚度大于等于3μm,通过增加芯片金属化焊盘的厚度,使金属化焊盘能够承受更大的超声能量和键合压力,在焊接过程中可保证焊接质量;另,采用铜线作为球焊引线,铜线由于成本优势,日益受到集成电路封装业的重视与青睐。除了较低的材料成本之外,铜线在电、热性能方面也优于金,与金相比,用量可更少,因而有利于降低封装成本,更节约了贵金属资源。
附图说明
图1为本实用新型实施例的主视图;
图2为本实用新型实施例金属框架的结构示意图;
图3为本实用新型实施例金属框架剖示图;
图4为本实用新型实施例铜线球焊芯片焊点示意图;
图5为本实用新型实施例铜线球焊的结构示意图。
主要组件符号说明
1、塑封体,2、引脚,3、散热片,4、铜合金框架,5、衬底区,
6、引脚区,7、边筋,8、连杆,9、边框,10、芯片,11、铜线,
12、镀银层,13、银胶层,14、铝金属化焊盘,15、芯片焊点。
具体实施方式
本实用新型实施例公开了一种用超声波铜线制造集成电路芯片封装结构,包括封装在塑封体1内的金属框架、芯片10、铜线11,在所述金属框架上设有衬底区5和引脚区6,其中,进一步包括导电层,所述导电层为镀银层12。所述镀银层12设在所述衬底区5和引脚区6上,所述芯片10固定在所述衬底区5的镀银层12上。
于本实用新型实施例中,所述金属框架为铜合金框架4。所述铜合金框架4还包括位于塑封体1外的两排引脚2及其连杆8、边筋7和边框9。延伸出塑封体1外的引脚2用于与电路板(图中未示)连接;连杆8、边筋7和边框9用于在加工过程中将衬底区5和引脚区6稳固在同一平面,塑封后边筋7和边框9被切掉。
所述芯片10的表面具有金属化焊盘,于本实用新型的实施例中,所述金属化焊盘为铝金属化焊盘14,用于球焊芯片焊点15。由于铜的硬度、屈服强度等物理参数高于金,球焊时需要对金属化焊盘施加更大的超声能量和键合压力,为了避免对芯片10的铝金属化焊盘14造成损伤甚至破坏,所述铝金属化焊盘14的厚度大于等于3μm。这样在增大超声能量和键合压力的情况下不会对铝金属化焊盘14造成损伤甚至破坏又可保证焊接质量。
所述铜线的直径选取与集成电路的功率大小相匹配,较粗的直径可承载较大的工作电流。本实用新型实施例所采取的铜线:ф0.02mm,延伸率:4-13%,或ф0.025mm,延伸率:5-15%。
所述铜线11的一端球焊在所述铝金属化焊盘14上,另一端压焊在所述引脚区6的镀银层12上。所述铜合金框架4上设有散热片3,延伸出塑封体1外的散热片3对称排列于引脚区每列引脚2之间,所述散热片3用于将集成电路芯片10产生的热量及时传导并散发出去。
本实用新型实施例的引脚2呈双列对称排列并被打弯成L形。
进一步包括一银胶层13,该银胶层13是一种高纯银粉与高分子聚合液的混合胶体。在高温下,聚合液分子相互交连而固化,将芯片10底部与衬底区5镀银层粘结为一体,胶体中大量均匀分布的银粒相互紧密接触而形成导电导热通道。
本实用新型一种用超声波铜线制造集成电路芯片封装结构中铝金属化焊盘14的厚度大于等于3μm,通过增加芯片10铝金属化焊盘14的厚度,使铝金属化焊盘14能够承受更大的超声能量和键合压力,在焊接过程中可保证焊接质量;另,采用铜线11作为球焊引线,铜线11由于成本优势,日益受到集成电路封装业的重视与青睐。除了较低的材料成本之外,铜线在电、热性能方面也优于金,与金相比,用量可更少,因而有利于降低封装成本,更节约了贵金属资源。
Claims (4)
1、一种用超声波铜线制造集成电路芯片封装结构,包括封装在塑封体内的金属框架、芯片、铜线,在所述金属框架上设有衬底区和引脚区,其特征在于:进一步包括导电层,所述导电层设在所述衬底区和引脚区,所述芯片固定在所述衬底区的导电层上,所述芯片的表面具有金属化焊盘,所述金属化焊盘的厚度大于等于3μm,所述铜线的一端球焊在所述金属化焊盘上,另一端压焊在所述引脚区的导电层上。
2、根据权利要求1所述的一种用超声波铜线制造集成电路芯片封装结构,其特征在于:在所述金属框架上设有至少二散热片,所述散热片对称排列在所述金属框架引脚区的引脚之间。
3、根据权利要求1或2所述的一种用超声波铜线制造集成电路芯片封装结构,其特征在于:进一步包括一银胶层,所述银胶层设在所述衬底区的导电层与所述芯片之间。
4、根据权利要求1所述的一种用超声波铜线制造集成电路芯片封装结构,其特征在于:所述导电层为镀银层。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105097740A (zh) * | 2015-08-18 | 2015-11-25 | 嘉兴景焱智能装备技术有限公司 | 芯片焊线治具、芯片引线引出方法和芯片成品 |
CN109192848A (zh) * | 2018-10-10 | 2019-01-11 | 广东晶科电子股份有限公司 | 一种led器件及其引线键合方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105097740A (zh) * | 2015-08-18 | 2015-11-25 | 嘉兴景焱智能装备技术有限公司 | 芯片焊线治具、芯片引线引出方法和芯片成品 |
CN105097740B (zh) * | 2015-08-18 | 2018-02-16 | 格科微电子(上海)有限公司 | 芯片焊线治具、芯片引线引出方法和芯片成品 |
CN109192848A (zh) * | 2018-10-10 | 2019-01-11 | 广东晶科电子股份有限公司 | 一种led器件及其引线键合方法 |
CN109192848B (zh) * | 2018-10-10 | 2024-02-20 | 广东晶科电子股份有限公司 | 一种led器件及其引线键合方法 |
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