CN201181700Y - Wire frame and electric connecting structure - Google Patents
Wire frame and electric connecting structure Download PDFInfo
- Publication number
- CN201181700Y CN201181700Y CNU2008200087683U CN200820008768U CN201181700Y CN 201181700 Y CN201181700 Y CN 201181700Y CN U2008200087683 U CNU2008200087683 U CN U2008200087683U CN 200820008768 U CN200820008768 U CN 200820008768U CN 201181700 Y CN201181700 Y CN 201181700Y
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- Prior art keywords
- guide feet
- welding
- lead frame
- connecting structure
- semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/37124—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37139—Silver [Ag] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
Abstract
The utility model relates to a lead frame and an electric connection structure which are applied on a semi-conductor power element with a leading pin distance less than 1.4mm; the lead frame includes a first grain bearing unit and at least two groups of leading pin units; the first grain bearing unit carries at least two semi-conductor grains; each group of leading pin units is corresponding to one semi-conductor grain; the leading pin unit is provided with a first leading pin and a second leading pin; the location of the first leading pin is provided with a welding zone which is connected with an electrode opposite to the semi-conductor grain; while the location of the second leading pin is provided with a welding line which is connected with another electrode opposite to the semi-conductor grain; the longitudinal largest width of the welding area of the first leading pin is more than or equal to 0.45mm and the transverse smallest width is equal to or between 0.4mm and 1.2mm; while the welding areas of the first leading pin and the second leading pin are not contacted and are provided with a clearance and an included angle. The included angle is more than or equal to 30 degrees.
Description
Technical field
The utility model relates to the technical field of lead frame and connecting structure for electrical equipment, especially relevant lead frame is the particular design of a guide feet weld zone wherein, allow under the condition of guide feet spacing less than 1.4mm, this guide feet connects the weldering welding zone still can carry out electric binding with the welding band.
Background technology
In the situation of the electric binding of general known semiconductor power component crystal grain and guide feet, electric current compared to the control grid of flowing through, because power semiconductor component crystal grain must hold great electric current by its transistorized source electrode, therefore, on the surface of power semiconductor component crystal grain, the shared area of source electrode has almost been contained whole plane of crystal, simultaneously must be by the gold solder line of many different length, and make the transistor source of power semiconductor component crystal grain and a plurality of guide feet of lead frame do electric binding.For grid owing to be control electrode, thereby, do not have too big electric current and flow through, be with the shared big young pathbreaker of grain surface of, grid much smaller than the shared area of source electrode, an and gold solder line of need and do electric binding only with guide feet.For drain electrode, because whole drain electrode pastes mutually with the lower surface of lead frame and do electric binding with guide feet, so do not need the electric binding of gold solder line.
Because the price of gold is high all the time, in the encapsulation of power semiconductor surface adhering element, gold occupies main material cost.Thereby, have supply with the operation of welding band the gold thread operation deficiency, so this creator in " the bonding wire structure of semiconductor power crystal " novel patent of TaiWan, China patent announcement M290306, has proposed to replace with aluminium strip and/or copper strips the semiconductor power crystal Welding Structure of most gold solder line welding manner in small size encapsulation SOP.Yet, the aluminium strip of this patent and/or copper strips welding pattern, be only applicable to single the crystal grain that three guide feet or four guide feet link together is used because have only with a plurality of guide feet formed weld zone that links together, just be enough to provide the aluminium strip welding the working space of palpus.So far, aforementioned patent can't be applied in two more than the crystal grain, or the less encapsulating products place of guide feet spacing.
Present known semiconductor packages with many crystal grain, because guide feet spacing less (for example the guide feet spacing is 1.4mm and following), and the several guide feet after the encapsulation separately can not link together independently of one another, so packaging operation of this based semiconductor, still must connect with gold thread between crystal grain and the guide feet, the use amount of gold is bigger, in the surging situation of price of gold now, cause the manufacturers produce cost significantly to increase, make to obtain to reduce relatively.
Hereat, this creator seeks a kind of lead frame and connecting structure for electrical equipment, under the closely spaced condition of guide feet, no matter what semiconductor grains lead frame is placing, all can carry out the operation that is connected of semiconductor grain and guide feet, reduce use thus and beat the situation of gold solder line and get off to save packaging cost with welding band.
The utility model content
Main purpose of the present utility model provides a kind of lead frame and connecting structure for electrical equipment of special wiring foot weld zone, this lead frame provides the scope of the weld zone of a suitable guide feet, this scope can allow the user under the condition of guide feet spacing at 1.4mm, is to carry out the electric connection operation of the welding band of two or more semiconductor grains and guide feet at least.This welding band can be aluminium strip, copper strips, silver band ... Deng.This guide feet spacing is meant the centre distance of adjacent two guide feet.
Secondary objective of the present utility model is at lead frame that a kind of applied range is provided and connecting structure for electrical equipment, the utility model can extensively apply to the guide feet spacing little and still wish to use the welding band do welding semiconductor element encapsulation in, and inner ccontaining crystal grain is not limit two yet, and design of the present utility model thus can be applied among more different types of semiconductor elements encapsulation.
For reaching above-described purpose, the utility model provides a kind of lead frame and connecting structure for electrical equipment, is used for the semiconductor element of guide feet spacing below 1.4mm, comprises:
A crystal grain bearing unit is carrying at least two semiconductor grains on it; And
At least two group guide feet unit, every group of guide feet unit comprises one first guide feet and one second guide feet, each guide feet of encapsulation back does not link to each other each other, each group guide feet unit matches with a corresponding semiconductor grain, this first guide feet place has a welding band and is connected with the semiconductor grain electrode of opposite, and having a bonding wire, second guide feet is connected with another electrode of semiconductor grain, it is characterized in that: vertical Breadth Maximum of the weld zone of this first guide feet is more than or equal to 0.45mm, laterally minimum widith between or equal 0.4mm-1.2mm, this first guide feet does not contact with weld zone between second guide feet and has a gap and an angle, and this angle is more than or equal to 30 degree.
Wherein this guide feet spacing is meant the distance at contiguous two guide feet centers.
Wherein this crystal grain bearing unit by one independently the crystal grain bearing constituted, have at least two semiconductor grains on this crystal grain bearing and be arranged at this.
Wherein this crystal grain bearing unit be by at least two independently the crystal grain bearing constituted, each crystal grain bearing only has a semiconductor grain and is arranged at this.
Wherein this first guide feet is to connect the transistor source that mode is connected in this semiconductor grain with the welding tape welding, and this second guide feet is to be connected in transistor gate with this semiconductor grain with the bonding wire welding manner.
Wherein the width of this welding band is for being less than or equal to 0.8mm.
Wherein this bonding wire is a gold thread.
Wherein should be aluminium strip by the welding band.
Wherein should be copper strips by the welding band.
Wherein should be the silver band by the welding band.
The beneficial effects of the utility model are:
When the guide feet spacing of semiconductor element is contracted to 1.4mm and when following, just technology only can be implemented the electric binding that the semiconductor grain finished more than two and the welding tape welding of guide feet partly connect by conducting wire frame structure mentioned in the utility model at present.Because the operation of welding band is to belong to cold welding; the needed pressure wanted fine and is the face contact because of it; so; also need enough welding regions; and employed welding bandwidth is preferably in below the 0.8mm in the utility model; the welding band then can be aluminium strip, copper strips, silver band ... Deng, the welding tape welding that uses structure of the present utility model can finish twin crystal grain at least or polycrystalline grain thus connects packaging operation.
Description of drawings
Be familiar with this technology personage and understand the purpose of this utility model, feature and effect for making, by following specific embodiment, and conjunction with figs., to the utility model illustrate in detail as after, wherein:
Fig. 1 is the plane graph of first kind of embodiment of the utility model;
Fig. 2 is the plane graph of second kind of embodiment of the utility model;
Fig. 3 is the side schematic view of lead frame of the present utility model and bonding wire.
The main element symbol description
1 ... crystal grain bearing unit
11 ... the crystal grain bearing
12 ... the crystal grain bearing
2 ... the guide feet unit
21 ... first guide feet
21A ... vertical Breadth Maximum
21B ... horizontal minimum widith
α ... angle
22 ... second guide feet
3 ... semiconductor grain
31 ... transistor source
32 ... transistor gate
4 ... the welding band
5 ... bonding wire
Embodiment
As shown in Figure 1, be the floor map of the utility model lead frame and bonding wire structure.The utility model mainly applies to the semiconductor element of guide feet spacing below 1.4mm.Alleged guide feet spacing is meant the centre distance of two adjacent guide feet in the utility model, shown in the guide feet spacing A among the figure.Lead frame of the present utility model mainly comprises a crystal grain bearing unit 1 and at least two group guide feet unit 2, this crystal grain bearing unit 1 is carrying at least two semiconductor grains 3, each semiconductor grain 3 correspondence one group of guide feet unit 2, this guide feet unit 2 is comprising one first guide feet 21 and one second guide feet 22, the place, weld zone of this first guide feet 21 has a welding and is with 4 to be connected with these semiconductor grain 3 electrode of opposite, and the weld zone of second guide feet 22 then has a bonding wire 5 and is connected with another electrode of semiconductor grain 3.Special character of the present utility model exists: vertical Breadth Maximum 21a of the weld zone of this first guide feet 21 must be more than or equal to 0.45mm, laterally minimum widith 21b must between or equal 0.4mm-1.2mm, and this first guide feet does not contact with the weld zone of second guide feet and have a gap and an angle α, and this angle α is more than or equal to 30 degree.Thus, the weld zone of this first guide feet 21 just can provide enough zone pressing for the welding band and carry out the cold welding operation, and then finishes the welding tape welding with twin crystal grain or polycrystalline grain and connect packaging operation.
As shown in Figure 1, in the present embodiment, this crystal grain bearing unit 1 has a large-area crystal grain bearing 11, has two semiconductor grains 3 on this crystal grain bearing 11 and is provided with on it.This guide feet unit 2 is provided with two groups, wherein two first guide feet 21 be with welding be with 4 as connect, two 22 of second guide feet are as connection with bonding wire 5.This welding is with 4 to be aluminium strip, copper strips, silver band ... Deng, 5 of this bonding wires are gold thread, and the dotted line B among the figure is the scope after last encapsulation is cut off, and each guide feet is not connected to each other together after encapsulation, is pin independently individually.
In the present embodiment, lead frame of the present utility model and connecting structure for electrical equipment are to be applied to power semiconductor crystal grain, hereat, this welding in the lead frame of the present utility model with 4 be by first guide feet 21 in the guide feet unit 2 will and with the transistor source 31 electric bindings on semiconductor grain 3 surfaces, bonding wire 5 then is by the transistor gate 32 electric bindings of second guide feet 22 with semiconductor grain 3.
In the present embodiment, vertical Breadth Maximum 21a of the weld zone of first guide feet 2 of this guide feet unit 2 must be more than or equal to 0.45mm, laterally minimum widith 21b must between or equal 0.4mm-1.2mm, have a gap and angle α between the weld zone of the weld zone of this first guide feet 21 and second guide feet 22, this angle α is more than or equal to 30 °.The welding that this first guide feet 2 like this is convenient to weld band.For the ease of applying, employed welding is preferably in below the 0.8mm with 5 width in the utility model, can decide according to product demand and soldering tip as for welding tape thickness and bonding area.
Fig. 2 is second kind of enforcement illustration of the present utility model, and in the present embodiment, this crystal grain bearing unit 1 has two individual dies bearings 12, and the area of this crystal grain bearing 12 is less, and a semiconductor grain 3 only is set on each crystal grain bearing 12.The mode of connection of all the other welding bands or bonding wire is identical with previous embodiment.Hence one can see that, crystal grain bearing of the present utility model unit 1 can be provided with for two or more semiconductor grains 3 at least, but crystal grain bearing unit 1 also can be made of the crystal grain bearing of single large-area crystal grain bearing or a plurality of small sizes, but on limit, not can be other not structure of mode of the same race yet.
Fig. 3 is a structure side view of the present utility model, in order to the side-looking situation of the conducting wire frame structure embodiment of explicit declaration in Fig. 1, Fig. 2.As shown in Figure 3, this welding is with 4 semiconductor grains of crossing on the crystal grain bearing unit 13, and the transistor source 31 of semiconductor grain 3 and first guide feet 21 are given in the electric binding, and be with to produce on 4 in welding simultaneously and weld impression 5a, 5b, welding does not then have the welding impression with 4 arcuation welding band part 5c, the width of welding impression number and welding band affects electrical quality, and anti-magnitude of current size is then decided according to the generous of connecting band.
Comprehensive above embodiment, conducting wire frame structure of the present utility model comprises following advantage:
1. provide the guide feet spacing between 1.4mm and following semiconductor grain and guide feet, to be electrically connected required conducting wire frame structure, and electric connection is to reach with the operation of welding band cold welding;
2. reduce the use amount of gold, reduce production costs;
3. can be widely used in various semiconductor element in;
4. improve the usefulness of semiconductor element.
The above is preferred embodiment of the present utility model only, is not in order to limit scope of the present utility model; All other do not break away from the equivalence of being finished under the spirit that the utility model discloses and changes or modify, and all should be included in the claim scope of the present utility model.
Claims (10)
1, a kind of lead frame and connecting structure for electrical equipment are used for the semiconductor element of guide feet spacing below 1.4mm, comprise:
A crystal grain bearing unit is carrying at least two semiconductor grains on it; And
At least two group guide feet unit, every group of guide feet unit comprises one first guide feet and one second guide feet, each guide feet of encapsulation back does not link to each other each other, each group guide feet unit matches with a corresponding semiconductor grain, this first guide feet place has a welding band and is connected with the semiconductor grain electrode of opposite, and having a bonding wire, second guide feet is connected with another electrode of semiconductor grain, it is characterized in that: vertical Breadth Maximum of the weld zone of this first guide feet is more than or equal to 0.45mm, laterally minimum widith between or equal 0.4mm-1.2mm, this first guide feet does not contact with weld zone between second guide feet and has a gap and an angle, and this angle is more than or equal to 30 degree.
2, lead frame as claimed in claim 1 and connecting structure for electrical equipment is characterized in that, wherein this guide feet spacing is meant the distance at contiguous two guide feet centers.
3, lead frame as claimed in claim 1 and connecting structure for electrical equipment is characterized in that, wherein this crystal grain bearing unit by one independently the crystal grain bearing constituted, have at least two semiconductor grains on this crystal grain bearing and be arranged at this.
4, lead frame as claimed in claim 1 and connecting structure for electrical equipment is characterized in that, wherein this crystal grain bearing unit be by at least two independently the crystal grain bearing constituted, each crystal grain bearing only has a semiconductor grain and is arranged at this.
5, lead frame as claimed in claim 1 and connecting structure for electrical equipment, it is characterized in that, wherein this first guide feet is to connect the transistor source that mode is connected in this semiconductor grain with the welding tape welding, and this second guide feet is to be connected in transistor gate with this semiconductor grain with the bonding wire welding manner.
6, lead frame as claimed in claim 1 and connecting structure for electrical equipment is characterized in that, wherein the width of this welding band is for being less than or equal to 0.8mm.
7, lead frame as claimed in claim 1 and connecting structure for electrical equipment is characterized in that, wherein this bonding wire is a gold thread.
8, lead frame as claimed in claim 1 and connecting structure for electrical equipment is characterized in that, wherein should be aluminium strip by the welding band.
9, lead frame as claimed in claim 1 and connecting structure for electrical equipment is characterized in that, wherein should be copper strips by the welding band.
10, lead frame as claimed in claim 1 and connecting structure for electrical equipment is characterized in that, wherein should be the silver band by the welding band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200087683U CN201181700Y (en) | 2008-04-03 | 2008-04-03 | Wire frame and electric connecting structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200087683U CN201181700Y (en) | 2008-04-03 | 2008-04-03 | Wire frame and electric connecting structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201181700Y true CN201181700Y (en) | 2009-01-14 |
Family
ID=40251196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200087683U Expired - Fee Related CN201181700Y (en) | 2008-04-03 | 2008-04-03 | Wire frame and electric connecting structure |
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| Country | Link |
|---|---|
| CN (1) | CN201181700Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142419A (en) * | 2010-02-03 | 2011-08-03 | 亿光电子工业股份有限公司 | Two-sided lead frame structure |
| CN102163587A (en) * | 2011-03-23 | 2011-08-24 | 常州市兴源电子有限公司 | Interconnecting aluminum tape for packaging integrated circuit |
-
2008
- 2008-04-03 CN CNU2008200087683U patent/CN201181700Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142419A (en) * | 2010-02-03 | 2011-08-03 | 亿光电子工业股份有限公司 | Two-sided lead frame structure |
| CN102163587A (en) * | 2011-03-23 | 2011-08-24 | 常州市兴源电子有限公司 | Interconnecting aluminum tape for packaging integrated circuit |
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