CN205452353U

CN205452353U - Large tracts of land electrode LED array

Info

Publication number: CN205452353U
Application number: CN201620300456.4U
Authority: CN
Inventors: 刘召军; 彭灯; 张珂; 莫炜静
Original assignee: SYSU CMU Shunde International Joint Research Institute; National Sun Yat Sen University
Current assignee: SYSU CMU Shunde International Joint Research Institute; National Sun Yat Sen University
Priority date: 2016-04-12
Filing date: 2016-04-12
Publication date: 2016-08-10
Anticipated expiration: 2026-04-12

Abstract

The utility model provides a large tracts of land electrode LED array, including single electrode LED array of large tracts of land and large tracts of land bipolar electrode LED array, since the electrode distributed of large tracts of land bipolar electrode LED array the LED device with the one side, so invert bipolar electrode LED wafer array by a large scale to the corresponding design substrate on, realize on every LED device unit and the substrate metal pad and wire and be connected to on being connected to the metal wire on the substrate with external circuit's scan driving mouth, realize that LED array scan driving shows. To single electrode LED array, because its P electrode and N electrode distributed be in the top and the below of LED device, every LED pixel's N electrode is connected with the substrate of corresponding design in the LED array, and the conductive thin film with corresponding design is connected with every pixel's of LED array P electrode again to realize that the scan driving of LED array shows on being connected to external circuit's scan driving mouth respectively substrate and conductive thin film's metal wire.

Description

A kind of broad-area electrode LED array

Technical field

This utility model relates to semiconductor photoelectric device field, more particularly, to a kind of broad-area electrode LED array.

Background technology

At present, LED display utilizes the lattice module or pixel composition large-area displays screen that light emitting diode constitutes, there is reliability high, service life is long, and adaptive capacity to environment is strong, and cost performance is high, the features such as use cost is low, in the short more than ten years, shoot up the main product into flat pannel display, is widely used in field of information display.

In the medium-sized large LED display screen module that application at present is most produces, the general display unit using pinned encapsulation and paster type encapsulation LED array to be used as LED display module.And in traditional LED array module preparation process, be that each LED pixel uses chip mounter or crest welder are welded on one by one on the pad on the pcb board of correspondence, although the method is simple to operate, but preparation and production cycle are longer, and automatization is inefficient.

Summary of the invention

In order to overcome above-mentioned the deficiencies in the prior art, the utility model proposes a kind of broad-area electrode LED array, this LED array simple in construction, preparation efficiency is high.

A kind of broad-area electrode LED array, including large area single electrode LED array and large area bipolar electrode LED array；

Large area single electrode LED array pressing the most successively has the LED wafer array after substrate, expansion crystalline substance and conductive film, the welding disking area that wherein substrate top surface is provided with, welding disking area is etched with some equally spaced row metal wires, conductive film lower surface is etched with the at equal intervals row metal line identical with row metal wire quantity, and row metal line is vertical with row metal wire；Offering several equally spaced windowed regions on each metal wire, its windowed regions point has the elargol connected for pressing or is sprayed with scolding tin；The interval of adjacent column metal wire and the interval of adjacent lines metal wire are equal；

Large area bipolar electrode LED array pressing the most successively has substrate, expand the LED wafer array after crystalline substance, wherein substrate top surface is provided with welding disking area, welding disking area is etched with vertical row metal line and row metal wire, row metal line and row metal wire cross section are isolated by isolated film, and row metal line is equal with the quantity of row metal wire, the interval of adjacent column metal wire and the interval of adjacent lines metal wire are equal, several equally spaced windowed regions groups are offered on each metal wire, often group includes two windowed regions points corresponding to LED wafer positive and negative electrode position, its windowed regions point has the elargol connected for pressing or is sprayed with scolding tin.

Owing to the distribution of electrodes of large area bipolar electrode LED array is at the same face of LED component, so by bipolar electrode LED wafer array large area upside-down mounting to corresponding design substrate, realize each LED component unit to be connected with metal pad on substrate and wire, and the turntable driving mouth of external circuit is connected on the metal wire on substrate, it is achieved LED array turntable driving shows.For single electrode LED array, owing to its P electrode and N electrode are distributed in above and below LED component, in LED array, each N electrode of LED pixel unit is connected with the substrate of respective design, again the P electrode of each to the conductive film of respective design and LED array pixel cell is connected, and the turntable driving that the turntable driving mouth of external circuit is respectively connecting to realize on the metal wire of substrate and conductive film LED array shows.

Preferably, the material of described substrate and conductive film is silicon chip, pcb board or flexible board.

Preferably, the material of described metal wire is conductive material, and this conductive material can be aluminum, copper, gold or other conductive materials.

Compared with prior art, technical solutions of the utility model provide the benefit that: a kind of broad-area electrode LED array that the utility model proposes, relative to traditional large area LED array, its simple in construction, and simplify preparation technology, improve production efficiency, beneficially volume production.

Accompanying drawing explanation

Fig. 1 is large area single electrode LED array substrat structure schematic diagram.

Fig. 2 is large area single electrode LED array conductive film schematic diagram.

Fig. 3 is large area bipolar electrode LED array substrat structure schematic diagram.

Detailed description of the invention

Large area bipolar electrode LED array pressing the most successively has the LED wafer array after substrate, expansion crystalline substance, wherein substrate top surface is provided with welding disking area, welding disking area is etched with vertical row metal line and row metal wire, row metal line and row metal wire cross section are isolated by isolated film, and row metal line is equal with the quantity of row metal wire, the interval of adjacent column metal wire and the interval of adjacent lines metal wire are equal, offering several equally spaced windowed regions on each metal wire, its windowed regions point has the elargol connected for pressing or is sprayed with scolding tin.

For large area single electrode LED array, the distribution of electrodes of single electrode LED component is in the top of LED component and bottom, the large area single electrode LED array that the present embodiment proposes, connects the substrate of the bottom electrode of large area LED array and connects the conductive film of top electrodes.

Backing material is silicon dioxide, FR4 material PCB or flexible board, etches 10 numbered a, the metal wire of b, c...j on the surface of a substrate, is provided with 10 windowed regions in every metal line, and 10 windowed regions are arranged at equal intervals.Windowed regions all can be under certain temperature environment, with conductive silver glue on point gum machine point, or spray scolding tin with tin-spraying machine, to be disposably directly pressed together on expanding the LED wafer array that crystalline substance obtains before on substrate, in pressing step, in LED array, each LED unit is wanted strictly accurately to be directed at some Jiao Chu on substrate or spray Xi Chu, in LED array the interval of two LED of arbitrary neighborhood also will and substrate on the interval of two windowed regions of arbitrary neighborhood consistent, so electrode of each LED unit in guarantee LED array combines with the windowed regions on corresponding substrate, thus reach each column LED on substrate and can set up, with column metal wire, the purpose being physically and electrically connected, and then external circuit can drive, by rank scanning mode, the LED array that the present invention implements.The LED array conductive film schematic diagram that the present embodiment proposes is as shown in Figure 2, the specification of corresponding substrate and the number of the above-listed metal wire of substrate, conductive film lower surface includes numbered 1,2,3...10 totally 10 row metal lines, after single electrode LED array is connected with substrate pressing, originally the blue film sticked on LED array is removed, this conductive film is directly directed at pressing combine with the top electrodes of LED array, has been achieved in that LED array and substrate, conductive film integrated.The output that drives of external circuit is respectively connecting on the metal wire of substrate and conductive film, then can realize the turntable driving to this integrated LED array.

For large area bipolar electrode LED array, its substrat structure schematic diagram proposed is as shown in Figure 3, this enforcement substrate includes and is divided into numbered 1,10 row metal lines of 2,3...10 and numbered a, b, the row metal wire of c...j, article ten, row metal line and ten row metal wires are etched in the surface of substrate respectively, and row metal line and row metal wire cross section are isolated by silica membrane, so make ranks metal wire to produce and physically and electrically connect.Window in the most certain region of every row metal line process, namely by the contact area outputing some equidistant certain areas on every ranks line, and plate certain thickness solder at ranks metal wire cross section and alignment uplifting window region, to carry out corresponding electrode contact under certain conditions with the LED wafer array after expanding crystalline substance, thus the purpose that each unit realizing LED wafer array is physically and electrically connected with external circuit, facilitate external drive circuit to be scanned the work luminescence of separately addressed driving each LED unit.

Claims

1. a broad-area electrode LED array, it is characterised in that include large area single electrode LED array and large area bipolar electrode LED array；

Broad-area electrode LED array the most according to claim 1, it is characterised in that the material of described substrate and conductive film is silicon chip, pcb board or flexible board.

Broad-area electrode LED array the most according to claim 1, it is characterised in that the material of described metal wire is conductor material.