CN1992359B - 发光二极管及其制造方法 - Google Patents

发光二极管及其制造方法 Download PDF

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Publication number
CN1992359B
CN1992359B CN 200610064047 CN200610064047A CN1992359B CN 1992359 B CN1992359 B CN 1992359B CN 200610064047 CN200610064047 CN 200610064047 CN 200610064047 A CN200610064047 A CN 200610064047A CN 1992359 B CN1992359 B CN 1992359B
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CN
China
Prior art keywords
compound semiconductor
semiconductor layer
nitride based
based iii
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200610064047
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English (en)
Chinese (zh)
Other versions
CN1992359A (zh
Inventor
大前晓
盐见治典
风田川统之
网隆明
宫嵨孝夫
平松雄司
畑田出穗
冈野展贤
冨谷茂隆
簗嵨克典
日野智公
成井启修
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Sony Corp
Original Assignee
Sony Corp
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Filing date
Publication date
Priority claimed from JP2006215342A external-priority patent/JP4462249B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN1992359A publication Critical patent/CN1992359A/zh
Application granted granted Critical
Publication of CN1992359B publication Critical patent/CN1992359B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN 200610064047 2005-09-22 2006-09-22 发光二极管及其制造方法 Expired - Fee Related CN1992359B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005275504 2005-09-22
JP275504/05 2005-09-22
JP2006215342A JP4462249B2 (ja) 2005-09-22 2006-08-08 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
JP215342/06 2006-08-08

Publications (2)

Publication Number Publication Date
CN1992359A CN1992359A (zh) 2007-07-04
CN1992359B true CN1992359B (zh) 2012-12-12

Family

ID=38214412

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200610064047 Expired - Fee Related CN1992359B (zh) 2005-09-22 2006-09-22 发光二极管及其制造方法

Country Status (2)

Country Link
JP (1) JP5152121B2 (ja)
CN (1) CN1992359B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11404599B2 (en) * 2016-05-20 2022-08-02 Lumileds Llc Method of forming a p-type layer for a light emitting device

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JP2010232597A (ja) * 2009-03-30 2010-10-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
KR100993093B1 (ko) * 2010-02-04 2010-11-08 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101039970B1 (ko) * 2010-02-11 2011-06-09 엘지이노텍 주식회사 반도체층 형성방법 및 발광 소자 제조방법
CN102760796B (zh) * 2011-04-29 2015-01-21 清华大学 发光二极管的制备方法
CN102760797B (zh) * 2011-04-29 2015-04-01 清华大学 发光二极管
US8912028B2 (en) 2011-08-17 2014-12-16 Lg Display Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
JP2013084832A (ja) * 2011-10-12 2013-05-09 Sharp Corp 窒化物半導体構造の製造方法
CN102437264B (zh) 2011-11-30 2013-11-06 李园 半导体结构及其形成方法
CN104025260B (zh) * 2012-08-03 2016-11-23 夏普株式会社 氮化物半导体元件结构体及其制造方法
KR101969308B1 (ko) 2012-10-26 2019-04-17 삼성전자주식회사 반도체 발광소자 및 그 제조 방법
KR102003001B1 (ko) * 2013-03-13 2019-07-23 엘지이노텍 주식회사 발광 모듈
CN103208568A (zh) * 2013-04-01 2013-07-17 厦门市三安光电科技有限公司 氮化物发光二极管及制作方法
CN104681681B (zh) * 2013-12-03 2019-01-04 上海蓝光科技有限公司 一种用于ⅲ-ⅴ族氮化物生长的衬底结构及其制备方法
JP2016066814A (ja) * 2015-12-22 2016-04-28 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ
CN107508585A (zh) * 2017-08-22 2017-12-22 广东美的制冷设备有限公司 开关器件封装结构、空调器的电控板以及空调器
CN108977887B (zh) * 2018-07-20 2023-11-17 深圳市科创数字显示技术有限公司 单晶氮化铟的生长方法
CN109037412B (zh) * 2018-08-16 2023-08-29 南昌大学 一种具有掩膜层的反极性led芯片及其制备方法
CN109860353B (zh) * 2018-10-31 2020-05-19 华灿光电(苏州）有限公司 一种GaN基发光二极管外延片及其制备方法
JP7227357B2 (ja) * 2019-11-26 2023-02-21 天津三安光電有限公司 赤外線発光ダイオード
CN111180561B (zh) * 2019-12-27 2021-06-29 华灿光电(苏州）有限公司 AlGaInP基发光二极管芯片及其制作方法
CN114267764B (zh) * 2021-12-27 2024-05-17 广东省科学院半导体研究所 高出光效率的深紫外led及其制备方法
CN116344698B (zh) * 2023-05-22 2023-08-29 江西兆驰半导体有限公司 图形化衬底GaN基LED外延片及其制备方法
CN116978991B (zh) * 2023-09-22 2023-12-12 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、led

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2830814B2 (ja) * 1996-01-19 1998-12-02 日本電気株式会社 窒化ガリウム系化合物半導体の結晶成長方法、及び半導体レーザの製造方法
US6576533B2 (en) * 1998-11-26 2003-06-10 Sony Corporation Method of forming semiconductor thin film of group III nitride compound semiconductor.
CN1529915A (zh) * 2001-07-24 2004-09-15 日亚化学工业株式会社 具有形成凹凸的基板的半导体发光元件
US6864158B2 (en) * 2001-01-29 2005-03-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate

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JP2002353134A (ja) * 2001-05-23 2002-12-06 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体の形成方法
JP2003046127A (ja) * 2001-05-23 2003-02-14 Sanyo Electric Co Ltd 窒化物系半導体発光素子
JP3966207B2 (ja) * 2003-03-28 2007-08-29 豊田合成株式会社 半導体結晶の製造方法及び半導体発光素子
JP4560307B2 (ja) * 2004-03-01 2010-10-13 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP3913758B2 (ja) * 2005-04-27 2007-05-09 三洋電機株式会社 半導体素子および半導体層の形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2830814B2 (ja) * 1996-01-19 1998-12-02 日本電気株式会社 窒化ガリウム系化合物半導体の結晶成長方法、及び半導体レーザの製造方法
US6576533B2 (en) * 1998-11-26 2003-06-10 Sony Corporation Method of forming semiconductor thin film of group III nitride compound semiconductor.
US6864158B2 (en) * 2001-01-29 2005-03-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate
CN1529915A (zh) * 2001-07-24 2004-09-15 日亚化学工业株式会社 具有形成凹凸的基板的半导体发光元件

Non-Patent Citations (7)

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JP特开2001-148543A 2001.05.29
JP特开2004-6931A 2004.01.08
JP特开2004-6937A 2004.01.08
JP特开平11-238687A 1999.08.31
JP第2830814号B2 1998.09.25
说明书第9栏第8行至第13栏第37行、附图11A-13.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11404599B2 (en) * 2016-05-20 2022-08-02 Lumileds Llc Method of forming a p-type layer for a light emitting device

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Publication number Publication date
JP2009246393A (ja) 2009-10-22
CN1992359A (zh) 2007-07-04
JP5152121B2 (ja) 2013-02-27

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