CN1960830A - 用于在半导体器件制造期间转移导电零件的方法及设备 - Google Patents
用于在半导体器件制造期间转移导电零件的方法及设备 Download PDFInfo
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Abstract
在本发明的第一方面,提供了一种可编程转移装置,用于将导电零件转移至目标衬底的电极垫。该可编程转移装置包括:(1)转移衬底;以及(2)形成在所述转移衬底上的多个独立的可寻址电极。每个电极均适于在向目标衬底的电极垫转移所述导电零件期间选择性地吸引并保持所述导电零件。还提供了其他数个方面。
Description
相关申请的交叉引用
本申请主张于2004年3月31日递交的、发明名称为“在半导体器件制造期间用于转移导电零件的方法及设备”的美国临时专利申请序列号60/558,089(代理案号9073/L)的优先权,这里通过引用其整体而将其内容包含于本说明书中。
技术领域
本发明涉及半导体器件制造,更具体地涉及在半导体器件制造期间用于转移导电零件的方法及设备。
背景技术
在器件封装期间,必须在衬底管芯的半导体器件电极垫与封装引线框之间形成电连接。一种用于形成这种电连接的技术是采用倒装片处理。
在典型的倒装片处理期间,在衬底管芯的电极垫设置导电块,并将衬底管芯附装至面向下的电路板或其他载体。导电块形成衬底管芯与载体之间的电气及机械连接。可以采用各种回流及/或底部填充处理来将衬底管芯固定至位于下方的载体,并保护由导电块提供的电连接。
可利用诸如掩膜物理汽相沉积、电化学镀或化学镀、或锡膏印刷(Paste Print)等各种技术在衬底的电极垫处形成倒装片块。另一种用于在衬底的电极垫处形成块的技术为预形成微型焊球并将该预形成的微型焊球转移至电极垫。E.Hashino等人发表的“Micro-Ball Wafer Bumping for FlipChip Interconnection”(IEEE Electronic Components and TechnologyConference(2001))描述了这种技术,其中预形成焊球经由配置板被转移至电极垫。根据E.Hashino等人的描述,配置板包括多个真空孔,每个真空孔都适于真空保持一个焊球,其中焊球以与要将焊球转移至其的电极垫的图案匹配的图案布置。理论上,这种方法允许衬底所需的全部焊球在一次传输操作中都被转移至电极垫。
采用真空技术的配置板会存在一些缺陷。例如,通常必须为每个电极垫图案提供专用的配置板。此外,在将焊球转移至配置板期间,由于真空泄露、污染、湿气等原因会使得在配置板的一个或更多真空孔处发生不正确的焊球对准。为了完成焊球从配置板向衬底的电极垫的转移,通常必须在每个电极垫处都采用诸如焊剂的附着剂以在配置板移开后将焊球保持在电极垫处。因此将无焊剂处理排除。因此,需要用于转移诸如焊球的导电材料的改进的方法及设备。
发明内容
在本发明的第一方面,提供了一种可编程转移装置,用于将导电零件转移至目标衬底的电极垫。该可编程转移装置包括:(1)转移衬底;以及(2)形成在所述转移衬底上的多个独立的可寻址电极。每个电极均适于在向目标衬底的电极垫转移所述导电零件期间选择性地吸引并保持所述导电零件。
在本发明的第二方面,提供了一种转移装置,用于将导电零件转移至目标衬底的目标位置。该转移装置包括:(1)转移衬底;以及(2)形成在所述转移衬底上的多个电极。每个电极均适于在向目标衬底的目标位置转移所述导电零件期间选择性地吸引并保持所述导电零件。
在本发明的第三方面,提供了一种方法,用于将导电零件转移至目标衬底的目标位置。该方法包括以下步骤:(1)通过转移衬底的电极保持导电零件;(2)将保持的导电零件与所述目标衬底的所述目标位置对准;并(3)将所述导电零件从所述转移衬底转移至所述目标衬底的所述目标位置。
在本发明的第四方面,提供了一种方法,用于将导电零件转移至目标衬底的电极垫。该方法包括以下步骤:(1)确定所述目标衬底的电极垫图案;(2)基于所述目标衬底的所述电极垫图案选择转移衬底的电极以寻址;(3)通过所述转移衬底的选择的电极保持导电零件;(4)将保持的导电零件与所述目标衬底的所述电极垫对准;并(5)将所述导电零件从所述转移衬底转移至所述目标衬底的所述电极垫。
通过以下详细描述、所附权利要求以及附图,本发明的其他特征及方面将变的更加清楚。
附图说明
图1是根据本发明设置的导电零件转移设备的示意性视图。
图2是图1的转移衬底的一部分的俯视图,示出了转移衬底的多个电极的第一示例性布局。
图3是图1的转移衬底的一部分的俯视图,示出了转移衬底的多个电极的第二示例性布局。
图4A示出了一列电极的放大视图,用于描述双极性电极的操作。
图4B及图4C分别示出了图1的转移衬底可采用的一列矩形电极及一列三角形电极。
图5A是图1的转移衬底的一部分的侧视截面图,示出了位于形成在衬底上的电介质层内的两个电极。
图5B是类似于图5A的侧视截面图,示出了将焊球保持在图1的转移衬底的接触表面上的静电力。
图6是图1的示例性实施例转移衬底的一部分的俯视图,示出了用于寻址转移衬底的各个电极的多路技术。
图7是根据本发明的用于将导电零件转移至目标衬底的示例性处理的流程图。
图8示出了根据本发明设置的图1的转移衬底的一部分的示例性实施例。
图9示出了用于静电电荷(ESC)计算的几何平面上的示例性球体。
图10示出了用于图9的几何平面上球体的ESC计算的等效电路。
图11是用于1微米厚电介质层的双极性电极的最佳几何结构的表。
图12是用于10微米厚电介质层的双极性电极的最佳几何结构的表。
具体实施方式
图1是根据本发明设置的导电零件转移设备101的示意性视图。导电零件转移设备101包括具有形成于其中的多个电极105的转移衬底103,电极105耦合至控制器107。如以下将描述的,转移衬底103的电极105适于在将导电零件转移至半形成在半导体晶片、玻璃板、聚合物衬底或类似器件衬底113上的导体器件(未单独示出)的电极垫111期间,静电地保持诸如焊球109、焊立方体、焊圆柱体或其他类似材料或形状的导电零件。还可采用转移衬底103以将导电零件转移至印刷电路板或其他载体,并转移至单独的衬底管芯。
可利用现有半导体器件制造工艺(例如,平版印刷、沉积、蚀刻等)在诸如半导体晶片、玻璃板等任何合适的衬底上制造转移衬底103。以下参考图2至图6对转移衬底103的示例性实施例进行描述。
控制器107可以硬件、软件或其结合来实现。例如,控制器107可包括一个或更多可以计算机程序编码操作的、用于执行这里描述的任何处理的一个或更多步骤的微处理器或微控制器。控制器107的全部或一部分可远离转移衬底103(如所示出的),或者可被包括而作为转移衬底103的一部分(例如,在转移衬底103上制造)。
转移衬底的示例性实施例
如上所述,转移衬底103包括多个电极105,电极105适于在将导电零件转移至器件衬底或将接收导电零件的其他载体(以下称为“目标衬底”)的电极垫期间静电地保持导电零件。转移衬底103优选地与目标衬底的尺寸相同或大于目标衬底,并可包括足够数量的电极105以允许同时转移将被转移至目标衬底的全部导电零件。如果要完成导电零件的管芯级别的转移,可采用尺寸较小的转移衬底(例如,优选的为包括足够数量的电极105的转移衬底,以允许同时转移将被转移至目标管芯或多个管芯的全部导电零件)。
在本发明的一个实施例中,转移衬底103可仅适于与一种类型的目标衬底一同使用。例如,转移衬底可具有(1)匹配目标衬底的数个电极垫111的数个电极105;及(2)匹配目标衬底的电极垫图案布局的电极图案布局。通常,这种转移衬底103仅适用于具有相同数量及/或布局的电极垫的目标衬底。在本发明的替换实施例中,转移衬底103的电极105的数量超过目标衬底的电极垫111的数量,并可独立地寻址(例如,赋能)转移衬底103的合适的电极105以仅在与目标衬底的电极垫111对准的位置保持导电零件(如下所述)。这种转移衬底103可定制,并可用于具有不同数量及/或布局的电极垫的目标衬底。
如上所述,可利用现有半导体器件制造工艺(例如,平版印刷、沉积、蚀刻等)在诸如半导体晶片、玻璃板等任何合适的衬底上制造转移衬底103。在本发明的至少一个实施例中,利用与目标衬底相同的衬底材料来制造转移衬底103。例如,如果目标衬底包括硅晶片,则可利用硅晶片来制造转移衬底103。类似的,如果目标衬底是玻璃板(例如,用于平面显示器),则可利用玻璃板来制造转移衬底103。通过对目标衬底及转移衬底103使用相同或类似的材料,可以减少并/或消除与目标衬底与转移衬底的热膨胀系数不同相关的热膨胀问题。
图2是图1的转移衬底103的一部分的俯视图,示出了转移衬底103的多个电极105的第一示例性布局。参考图2,转移衬底103的电极105布置为栅格图案,其中电极105的列203之间的间距或中心至中心距离201约等于电极105的行207的间距205。可以理解,通常,间距201可不同于间距205。尽管可采用其他间隔,但在本发明的一个具体实施例中,间距201、205处于50微米至200微米的范围内。
图3是图1的转移衬底103的一部分的俯视图,示出了转移衬底103的多个电极105的第二示例性布局。图3的第二示例性布局类似于图2的第一示例性布局,但采用了更紧密的电极充填密度。例如,在图3的第二示例性布局中,对角线电极之间的间距小于电极的列203或行207之间的间距。可采用其他电极布置。
图2及图3的电极105示出为圆形双极性电极。图4A示出电极105的列的放大视图,用于描述这种双极性电极的操作。图4B及图4C分别示出了转移衬底103还可采用的矩形及三角形电极的列。大体上,可对转移衬底103的电极105使用任何其他电极形状或电极形状的结合。
参考图4A,每个电极105都包括形成双极性电极105的内电极401及外电极403。通过在内电极401及外电极403上施加AC或DC偏压,在内电极401与外电极403之间产生电场。当接近电极105布置导电零件时,电场可通过诸如图1的焊球109中的一个的导电零件来耦合。电场使得重新分配导电零件内的电荷以平衡电极105上的电势。具体而言,具有与内电极401及外电极403的电荷极性相反的电荷在导电零件内(如下述参考图5A及图5B在整个电介质层501上)积蓄,使得导电零件将被电极105吸引并保持。注意,优选的是在由电极105拾取并/或保持导电零件之前对导电零件进行中和(例如,为避免对将要向其转移导电零件的目标衬底上的器件的电气损害)。可通过在转移之前将保持导电零件的容器接地或通过(例如,利用电离等)中和其中存储有导电零件的环境(例如,空气或其他气体)来进行上述中和。
图5A是转移衬底103的一部分的侧视剖视图,示出了位于形成在衬底503(例如,硅晶片、玻璃板等)上的电介质层501内的两个电极105。电介质层501例如可包括二氧化硅(SiO2)、氮化硅(Si3N4)、氧化铝(Al2O3)、SiOx、SixNy、SiHN、AlN等,或其他合适的电绝缘材料。
如图5A所示,电介质层501包围并电隔离各个电极105的内电极401及外电极403。电介质层501还形成接触表面505,通过电极105将诸如焊球109的导电零件保持抵靠在接触表面505上。例如可基于其介电常数(例如,其影响卡紧力)及/或将保持在电介质层501上的导电零件的润湿性来选择电介质材料(例如,如果在与电介质层501接触时要熔化导电零件,则优选地选择电介质层501使得在熔化状态时导电零件不会无意地被电介质层501保持或者无意地粘附至电介质层501)。可在相邻电极105之间形成接地面507以防止电场在电极之间交叉耦合。
在本发明的至少一个实施例中,电介质层501在接触表面505与内电极401及外电极403之间可具有约0.5微米至10微米的厚度,电极105的每个外电极403都可具有与将被电极保持的导电零件大致相同或略小的直径及/或长度,和/或者电极105的内电极401及外电极403可彼此间隔约0.5微米至10微米。接地面507优选地与内电极401及外电极403处于相同深度,并可与外电极403间隔开约10微米的间距。也可采用其他电介质层厚度、电极尺寸及/或间隔、以及/或接地面深度及/或间距。以下参考图8描述转移衬底103的示例性实施例。
参考图5A中的最左侧电极105,在内电极401及外电极403上施加DC偏压(如上所述,也可类似地施加AC电压),从而在内电极401与外电极403之间产生电场(未示出)。电场耦合通过电介质层501并使得焊球109内的电荷将被重新分配。由此如上所述由电极105保持焊球109。图5B是类似于图5A的侧视剖视图,其示出了将焊球109保持抵靠在转移衬底103的接触表面505的静电力509。
将焊球109或其他导电零件保持抵靠在转移衬底103的接触表面505上所需的电压水平取决于很多因素,诸如焊球/导电零件尺寸、形状、重量、导电性及/或极性、内电极401及外电极403的几何结构及/或间隔、电介质层501的介电常数及/或电介质击穿电压、以及内电极401及外电极403与接触表面505之间的间距等。在至少一个实施例中,可在内电极401与外电极403之间施加约10-500伏特的AC电压以将50微米至200微米直径的焊球或其他形状的导电零件保持抵靠在接触表面505上。也可应用其他电压电平。注意,AC电压可减少电介质充电并延长转移衬底103的寿命。
参考图5A中的最右侧电极105,未在电极105的内电极401与外电极403之间施加偏压。因此,大体上焊球109将不会被保持抵靠在电极105的接触表面505上。但是,在一些环境下,会在电极105以及/或焊球109上积蓄不希望的静电电荷,其会导致焊球109被松动地和/或不希望地保持抵靠在接触表面505上。
为了移除不希望地保持抵靠在转移衬底103的接触表面505上的焊球109,如图5B中最右侧电极105所示,可以相同电压(及电压极性)AC或DC偏压内电极401及外电极403。通过向内电极401及外电极403施加相同电压及电压极性,电极105表现为单极性电极。然后通过在正及负之间循环所施加的电压极性,至少将在电压极性循环的一部分期间在焊球109与电极105之间产生同类电荷。如图5B中的箭头511所示,该同类电荷将推动焊球109远离接触表面505。从接触表面505移除焊球所需的电极电压电平取决于多个因素(诸如以上所述的与保持焊球抵靠在接触表面505上所需的电压水平的因素)。在一个实施例中,可在电极105的内电极401及外电极403两者上同时施加约20伏特的DC电压以移除被(无意地或因其他原因)保持抵靠在转移衬底103的接触表面505上的焊球。可以采用其他电压电平及/或正、负或两种极性(例如,相对于接地)。
虽然参考图2至图5B描述的电极105为双极性电极,可以理解,转移衬底103也可类似地采用单极性电极。当采用单极性电极时,诸如焊球109的导电零件通常必须以某一电势(例如,接地)为基准,以由转移衬底103的电极105正确地保持。例如,焊球或其他导电零件可被放置在离子发生器、气体放电或其他等离子区、以电压为基准的液体或其他媒介中,以使得焊球或其他导电零件
以某一电势为基准。
在本发明的一个或更多实施例中,可以独立地寻址(例如,赋能)转移衬底103的每个电极105。这种设置允许定制转移衬底103以与多个目标衬底的电极垫图案匹配。例如,通过选择性地采用电极105,可以实现不同的“有源”电极间距。即,可以预定间距在转移衬底103上形成通用阵列的电极105,而转移衬底103的仅被寻址的或使能的电极105将在转移操作期间保持焊球109或其他导电零件。由此可为具有不同电极垫图案及/或间距的无限制数量的目标衬底采用相同的转移衬底103。在一个实施例中,这种通用列阵的电极105可具有在约150微米至250微米之间的电极间距。也可采用其他间距。
为了为各个电极105分别提供单独的地址,可为每个电极105独立布线。可替换地,为寻址各个电极105可采用多路技术。图6是转移衬底103的示例性实施例的一部分的俯视图,示出了用于处理各个电极105的多路技术。
参考图6,电极105的列601的内电极401经由列连接603耦合,而电极105的行605的外电极403经由行连接607耦合。(列连接603可处于第一平面内,该第一平面与行连接607所处的第二平面电气隔离)。这种寻址类似于DRAM或类似存贮器件中采用的寻址技术,并允许通过列连接603与行连接607的唯一结合(例如,通过在各个电极位置在电容器内存储电荷)来独立地激活各个电极105。也可采用其他处理。
示例性转移处理
图7是根据本发明用于将导电零件转移至目标衬底的示例性处理700的流程图。处理700的一个或更多步骤可通过图1的控制器107来执行,并且/或者可包括一个或更多计算机程序产品。
参考图7,处理700开始于步骤701。在步骤702,确定导电零件将要被转移至的目标衬底的电极垫图案(例如,图1中的衬底113)。例如,目标衬底的电极垫图案可以是已知的。可替换地,可检测目标衬底以确定目标衬底上的电极垫的位置。可采用光学、X射线或类似计量技术以判定目标衬底上电极垫的位置。可使电极垫间隔标准化以使得可通过视频、电荷耦合器件(CCD)或其他照相机及图案识别软件来容易地识别目标衬底的垫图案。然后可将电极垫图案信息提供至控制器107(图1)。在至少一个实施例中,可以采用这种电极垫图案信息来近似实时(例如,空闲定制)地定制转移衬底103(如下所述)。
在步骤703,控制器107基于目标衬底上的电极垫的图案来确定转移衬底103的哪个电极105需要寻址/赋能。例如,基于目标衬底上的电极垫的图案,控制器107在导电零件转移操作期间可确定待处理的各个电极105的行及列。
在步骤704,采用转移衬底103以通过对应于目标衬底的电极垫的转移衬底103的电极105来保持导电零件(例如,利用在步骤703中选择的电极105)。为保持导电零件,可使转移衬底103接近待被转移衬底103保持的多个导电零件。例如,可将转移衬底103定向使得转移衬底103的电极105面向上,而导电零件可被倾倒或以其他方式布置在转移衬底103的接触表面505上。然后,转移衬底103被选择的电极105可被寻址/赋能,使得通过被寻址/赋能的电极来静电地保持导电零件。转移衬底103可被倾斜或翻转使得可(例如,通过重力)移除未被转移衬底103保持的导电零件。大体上,可以任何角度保持转移衬底103,以接收待转移至目标衬底的导电零件。
为确保转移衬底103的未寻址电极105不会无意地保持导电零件,可向未寻址的电极的内电极401及外电极403施加相同的电压水平及极性。然后可循环电压极性并/或在正极及负极之间扫过以排斥任何不希望保持的导电零件(如上所述)。也可采用氮或类似气体以从转移衬底103吹掉不希望保持的导电零件。也可类似地采用机械搅动/力(例如,抖动及/或振动)。
可执行光学或类似检测步骤以确保要保持导电零件的转移衬底103的全部及/或仅电极105正保持导电零件。如果导电零件未被正确地转移至转移衬底103,则可重复上述处理直至在转移衬底103的各个选择的电极105处保持导电零件,且未在转移衬底的未选择电极处保持导电零件。可采用其中导电零件被初始引入到转移衬底103的相同或不同位置及/或室。
在步骤705,转移衬底103接近目标衬底布置,而由转移衬底103保持的导电零件与目标衬底的电极垫对准。例如,可通过将光波传递通过两个衬底(例如,可穿透转移衬底及目标衬底的光波长,诸如用于硅衬底的红外波长)而将转移衬底103的电极105与目标衬底的电极垫对准。还可采用对准标记、对准特征或其他现有平版印刷对准技术。
一旦由转移衬底103所保持的导电零件与目标衬底的电极垫对准,则在步骤706,由转移衬底103所保持的导电零件被转移至目标衬底的电极垫。为了进行上述转移,可以将施加至目标衬底的赋能电极105的电压去除、接地或扫过至相反极性。也可将目标衬底保持在便于将导电零件从转移衬底103转移至目标衬底的电极垫的特定温度、处于外界环境中并/或处于特定电势。例如,转移衬底103可被加热至特定温度,该特定温度可提高由转移衬底103所保持的导电零件至目标衬底的电极垫的附着性。在其中转移衬底103的接触表面505为电介质的实施例中,当加热(例如,熔化)超过目标衬底的电极垫时,由转移衬底103所保持的导电零件不太可能粘附至接触表面505。
为了增加目标衬底的粘性,可以将焊剂层或其他粘性材料布置在目标衬底的电极垫上。如果在非氧化环境下转移正由转移衬底103所保持的导电零件,则会不需要并/或可除去该焊剂层。也可向吸引导电零件的目标衬底及/或目标衬底的电极垫施加电压。可在固态或熔化状态转移该导电零件。
可以向转移衬底103的接触表面505增加诸如谷底及脊、及锯齿图案等结构特征,以在步骤706的转移操作期间进一步降低导电零件至转移衬底103的粘附。
在步骤707,处理700结束。
图8示出了根据本发明设置的图1的转移衬底103的一部分的示例性实施例。参考图8,转移衬底103包括布置在电介质层501内的内电极401及外电极403。第一过孔801将内电极401与位于下方的内电极迹线803耦合,而第二过孔805将外电极403与位于下方的外电极迹线807耦合。电介质层501分别包括第一、第二及第三电介质层809-813。
在本发明的一个示例性实施例中,第一电介质层809具有约3微米的厚度,第二电介质层811具有约3-6微米的厚度,而第三电介质层813具有约0.5至10微米的厚度。内电极401具有约10微米的直径D。内电极401与外电极403之间分隔开约2.5微米的间距L,而外电极403具有约5微米的宽度W。内电极401及外电极403、过孔801及805、以及迹线803及807具有约1-2微米的厚度;而过孔801及805、以及迹线803及807具有约1-2微米的宽度。可以对电介质层、电极、电极间隔、过孔、及迹线等应用其他尺寸。
图9示出了用于静电电荷(ESC)计算的几何平面上的示例性球体。参考图9,球体901临近转移衬底903(例如,本发明上述任意转移衬底)的一部分布置。转移衬底903包括布置在电介质层909内的内电极905及外电极907。球体901具有使得在内电极905的外边缘与电介质层909之间存在内空隙Gin、并使得在外电极907的外边缘与电介质层909之间存在外空隙Gout的半径RSB(参考图9)。即,球体901与内电极905分离有内空隙Gin,并与外电极907分离有外空隙Gout。内电极905及外电极907与电介质层909的顶部之间的电介质层厚度为Df。内电极905具有半径Rio,而外电极907具有内半径Roi及外半径Roo。
图10示出了用于图9的几何平面上球体的ESC计算的示意性等效电路1001。参考图10,等效电路1001包括在球体1007(例如,焊球)与内电极1009之间与内薄膜电容器1005串联的内空隙电容器1003。等效电路1001还包括在球体1007与外电极1015之间与外薄膜电容器1013串联的外空隙电容器1011。
对于双极性设置,节点1017是浮动的。总电容可由全部四个电容器的串联组合来表示。
对于单极性设置,节点1017接地。总电容可由空气电容器及薄膜电容器的串联组合的并联总和来表示。
图11是用于1微米厚第三电介质层813(图8)的双极性电极的最佳几何结构的表。图12是用于10微米厚第三电介质层813(图8)的双极性电极的最佳几何结构的表。
参考图9至图12,为了优化用于双极性ESC计算的电极几何结构,为各种球尺寸计算最佳电极半径。该值例如取决于球半径(其确定内空隙及外空隙)、薄膜厚度以及介电常数。对于最大的力,内外电容器应相等,但由于空隙不同(内对外)的原因,外电极面积优选地大于内电极面积。
因为空隙差异(图9),故在几何平面上的球体是复杂几何体。具有电浮动球的双极性电极可由串联的4个电容器来表示。即,静电(ES)力等式未非公知的平行板等式。相反,力等式可从以下能量等式得出:
力=1/2*V2*d/dx(净电容(x))
(其中V为电压)。对于具有最佳几何结构并驱动在+/-20V的诸如1微米的SiO2的较薄薄膜,对于具有15微米半径的球,|Emax|=20V/微米,而力/重量比率为~360。但是,对于具有150微米半径的球,由于空隙相对于较薄薄膜占优的原因,力/重量比率下降至~4.5。
对于具有最佳几何结构并驱动在+/-200V的诸如10微米的SiO2的较厚薄膜,对于具有15微米半径的球,|Emax|=20V/微米,而力/重量比率为~3000。但是,对于具有150微米半径的球,由于空隙相对于较厚薄膜的较弱影响力的原因,力/重量比率下降至~36。
如上所述,具有电浮动球的双极性电极可由串联的4个电容器来表示。可通过以下来得到相应的力等式:
其中:
且
因此,力等式变为:
其中:
Dtotal=2·Df+Gin+Gout
Ain为内电极面积。
Aout为外电极面积。
Df为薄膜厚度。
Gin为内电极与球之间的空隙。
Gout为外电极与球之间的空隙。
Dtotal为电极之间的总间距。
εr_film为薄膜的介电常数。
εr_air为空隙的介电常数。
ε0为自由空间的电容率。
x为从内电极通过薄膜及内空隙至球、通过外空气及薄膜至外电极的展开尺寸。
球与平面之间的总的吸引力等于通过薄膜及空气的电极之间的总的力。为了优化的目的,对于给定的Df、V、以及球尺寸,通过设定Ain及Aout使得Cin等于Cout,可使电容量及力最大化。由于存在空隙的原因(例如,Gin小于Gout),Aout必须大于Ain。
具有电浮动球的单极性电极可通过4个电容器的并联及串联组合来表示。可通过以下确定相应的力等式:
其中:
Ctotal=Cin+Cout
且
因此,力等式变为:
其中:
Ain为内电极面积。
Aout为外电极面积。
Df为薄膜厚度。
Gin为内电极与球之间的空隙。
Gout为外电极与球之间的空隙。
εr_film为薄膜的介电常数。
εr_air为空隙的介电常数。
ε0为自由空间的电容率。
x为从各个电极通过薄膜及各个空隙至球的尺寸。
V为单极性电压(双极性电压的1/2)。
球与平面之间的总吸引力等于上面内及外区域上的力的总和。为了优化的目的,可以使Cin及Cout最大化。
上述描述仅揭示了本发明的示例性实施例。对本领域的技术人员而言,很容易获得落入本发明的范围内的对上述揭示的设备及方法的改变。例如,转移衬底103的电极105可以是单极性电极或双极性电压。如果电极105为双极性,则电极可以是平衡或非平衡的(例如,就内电极与外电极之间的表面积及/或施加在其上的电压而言)。转移衬底103不必可定制。即,转移衬底103上电极105的图案及数量可正好与目标衬底的电极垫的图案及数量匹配。在此情况下,对每个唯一的目标衬底电极垫图案都需要唯一的转移衬底103。
利用转移衬底103,可不取决于进行零件熔化的温度、化学计量(stochiometry)及/或合金化或形状(假定采用了合适的电极形状)等等来转移诸如焊球、激光二极管、及具有导电或聚合物层形成在其一部分上的非导电目标等多种类型的导电零件。
如上所述,可通过向双极性电极的内电极及外电极施加相同极性的电压来从双极性电极释放导电零件。例如,内电极及外电极的电压极性可以一定的频率循环(例如,从约1Hz至数百Hz),并/或所施加的电压可降低(例如,至零)。可对单极性及双极性电极两者进行该处理。优选地相对于接地平衡用于向内及外电极施加电压的驱动电路。
在本发明的另一实施例中,替代一个或更多或全部电极105,转移衬底103可采用诸如气动阀(例如,耦合至真空管线)、及机械夹钳等微型机电系统(MEM)装置。例如,每个EME装置都可被独立地寻址,且/或转移衬底103的MEM装置的数量可超过目标衬底的电极垫111的数量。因此,可以与上面参考基于电极的转移衬底所描述的类似的方式来利用这种转移衬底(例如,允许转移衬底用于多个目标衬底及/或目标衬底电极垫图案)。这里所描述的目标衬底可被用于转移目标至电极垫或至目标衬底的其他需要(目标)位置或至其他目标位置。
因此,虽然已结合其示例性实施例对本发明进行了描述,但应该理解的是其他实施例也会落入由所附权利要求界定的本发明的精神及范围内。
Claims (20)
1.一种可编程转移装置,用于向目标衬底的电极垫转移导电零件,所述可编程转移装置包括:
转移衬底;及
形成在所述转移衬底上的多个独立的可寻址电极,每个电极均适于在向目标衬底的电极垫转移所述导电零件期间选择性地吸引并保持所述导电零件。
2.根据权利要求1所述的可编程转移装置,其中所述转移衬底包括具有多个电极形成在其上的硅衬底。
3.根据权利要求1所述的可编程转移装置,其中所述转移衬底包括具有多个电极形成在其上的玻璃板。
4.根据权利要求1所述的可编程转移装置,其中所述转移衬底具有等于或大于所述目标衬底的尺寸的尺寸。
5.根据权利要求1所述的可编程转移装置,其中所述电极中的至少一个包括双极性电极。
6.根据权利要求1所述的可编程转移装置,其中所述电极中的至少一个包括单极性电极。
7.根据权利要求1所述的可编程转移装置,还包括耦合至所述转移衬底并适于独立地寻址所述转移衬底的每个电极的控制器。
8.根据权利要求7所述的可编程转移装置,其中所述控制器还适于:
确定所述目标衬底的电极垫图案;并且
基于所述目标衬底的所述电极垫图案来选择所述转移衬底的电极以寻址。
9.根据权利要求7所述的可编程转移装置,其中所述控制器至少还适于启动:
使用所述转移衬底的选择电极保持导电零件;以及
从所述转移衬底向所述目标衬底的电极垫转移所述导电零件。
10.一种转移装置,用于向目标衬底的目标位置转移导电零件,所述转移装置包括:
转移衬底;及
形成在所述转移衬底上的多个电极,每个电极均适于在向目标衬底的目标位置转移所述导电零件期间选择性地吸引并保持所述导电零件。
11.根据权利要求10所述的转移装置,其中所述电极中的至少一个包括双极性电极。
12.根据权利要求10所述的转移装置,其中所述电极中的至少一个包括单极性电极。
13.根据权利要求10所述的转移装置,其中每个电极均适于在向所述目标衬底的电极垫转移所述导电零件期间选择性地吸引并保持所述导电零件。
14.一种向目标衬底的目标位置转移导电零件的方法,包括以下步骤:
通过转移衬底的电极保持导电零件;
将保持的所述导电零件与所述目标衬底的所述目标位置对准;并
将所述导电零件从所述转移衬底转移至所述目标衬底的所述目标位置。
15.根据权利要求14所述的方法,还包括以下步骤:
确定所述目标衬底的目标位置图案;并
基于所述目标衬底的所述目标位置图案选择所述转移衬底的电极以寻址。
16.根据权利要求14所述的方法,其中将所述导电零件从所述转移衬底向所述目标衬底的所述目标位置转移的步骤包括将所述导电零件从所述转移衬底转移至所述目标衬底的电极垫。
17.根据权利要求14所述的方法,其中通过转移衬底的电极保持导电零件的步骤包括保持焊球。
18.根据权利要求14所述的方法,其中所述目标衬底包括硅衬底。
19.根据权利要求18所述的方法,其中所述转移衬底包括硅衬底。
20.一种向目标衬底的电极垫转移导电零件的方法,包括以下步骤:
确定所述目标衬底的电极垫图案;
基于所述目标衬底的所述电极垫图案选择转移衬底的电极以寻址;
通过所述转移衬底的选择的所述电极保持导电零件;
将保持的所述导电零件与所述目标衬底的所述电极垫对准;并
将所述导电零件从所述转移衬底转移至所述目标衬底的所述电极垫。
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JP2007532003A (ja) | 2007-11-08 |
KR20070006885A (ko) | 2007-01-11 |
CN100553847C (zh) | 2009-10-28 |
EP1737600A1 (en) | 2007-01-03 |
DE602005009344D1 (de) | 2008-10-09 |
US20050232728A1 (en) | 2005-10-20 |
WO2005097390A1 (en) | 2005-10-20 |
EP1737600B1 (en) | 2008-08-27 |
US7407081B2 (en) | 2008-08-05 |
US20080283387A1 (en) | 2008-11-20 |
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