CN1957442A - 包括带有金属电极的电容器的集成电路以及制造这种电容器的方法 - Google Patents
包括带有金属电极的电容器的集成电路以及制造这种电容器的方法 Download PDFInfo
- Publication number
- CN1957442A CN1957442A CN200580016703.2A CN200580016703A CN1957442A CN 1957442 A CN1957442 A CN 1957442A CN 200580016703 A CN200580016703 A CN 200580016703A CN 1957442 A CN1957442 A CN 1957442A
- Authority
- CN
- China
- Prior art keywords
- capacitor
- electrode
- integrated circuit
- silicon
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 33
- 239000002184 metal Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0406674 | 2004-06-18 | ||
FR0406674A FR2871935A1 (fr) | 2004-06-18 | 2004-06-18 | Circuit integre comprenant un condensateur a elecrodes metalliques et procede de fabrication d'un tel condensateur |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1957442A true CN1957442A (zh) | 2007-05-02 |
Family
ID=34946896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200580016703.2A Pending CN1957442A (zh) | 2004-06-18 | 2005-06-07 | 包括带有金属电极的电容器的集成电路以及制造这种电容器的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7781296B2 (zh) |
EP (1) | EP1774576A1 (zh) |
JP (1) | JP2008503077A (zh) |
CN (1) | CN1957442A (zh) |
FR (1) | FR2871935A1 (zh) |
WO (1) | WO2006008356A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9496326B1 (en) | 2015-10-16 | 2016-11-15 | International Business Machines Corporation | High-density integrated circuit via capacitor |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03230561A (ja) * | 1990-02-06 | 1991-10-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
DE4321638A1 (de) * | 1992-09-19 | 1994-03-24 | Samsung Electronics Co Ltd | Halbleiterspeicherbauelement mit einem Kondensator und Verfahren zu seiner Herstellung |
US6348708B1 (en) * | 1995-04-10 | 2002-02-19 | Lg Semicon Co., Ltd. | Semiconductor device utilizing a rugged tungsten film |
JP2839076B2 (ja) | 1995-05-11 | 1998-12-16 | 日本電気株式会社 | 半導体装置およびその製造方法 |
KR100232160B1 (ko) * | 1995-09-25 | 1999-12-01 | 김영환 | 반도체 장치의 커패시터 구조 및 그 제조방법 |
KR100259039B1 (ko) | 1997-02-17 | 2000-06-15 | 윤종용 | 반도체장치의커패시터제조방법 |
US6255159B1 (en) * | 1997-07-14 | 2001-07-03 | Micron Technology, Inc. | Method to form hemispherical grained polysilicon |
US6033967A (en) * | 1997-07-21 | 2000-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for increasing capacitance in DRAM capacitors and devices formed |
US6143617A (en) * | 1998-02-23 | 2000-11-07 | Taiwan Semiconductor Manufacturing Company | Composite capacitor electrode for a DRAM cell |
US6682970B1 (en) * | 1998-02-27 | 2004-01-27 | Micron Technology, Inc. | Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
KR100319888B1 (ko) * | 1998-06-16 | 2002-01-10 | 윤종용 | 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법 |
KR100304702B1 (ko) * | 1998-07-10 | 2001-09-26 | 윤종용 | 반도체장치의 커패시터 및 그 제조방법 |
JP2992516B1 (ja) * | 1998-09-04 | 1999-12-20 | 株式会社日立製作所 | 半導体装置の製造方法 |
US6291289B2 (en) * | 1999-06-25 | 2001-09-18 | Micron Technology, Inc. | Method of forming DRAM trench capacitor with metal layer over hemispherical grain polysilicon |
DE10109218A1 (de) * | 2001-02-26 | 2002-06-27 | Infineon Technologies Ag | Verfahren zur Herstellung eines Speicherkondensators |
US20030020122A1 (en) * | 2001-07-24 | 2003-01-30 | Joo Jae Hyun | Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a noble metal oxide, and integrated circuit electrodes and capacitors fabricated thereby |
CN1204616C (zh) | 2001-12-20 | 2005-06-01 | 国际商业机器公司 | 用sige bicmos集成方案制造多晶-多晶电容器的方法 |
US20030123216A1 (en) * | 2001-12-27 | 2003-07-03 | Yoon Hyungsuk A. | Deposition of tungsten for the formation of conformal tungsten silicide |
US6664161B2 (en) * | 2002-05-01 | 2003-12-16 | International Business Machines Corporation | Method and structure for salicide trench capacitor plate electrode |
US6815753B2 (en) * | 2002-08-29 | 2004-11-09 | Micron Technology, Inc. | Semiconductor capacitor structure and method to form same |
US6858487B2 (en) * | 2003-01-02 | 2005-02-22 | United Microelectronics Corp. | Method of manufacturing a semiconductor device |
US6964901B2 (en) * | 2003-06-03 | 2005-11-15 | Micron Technology, Inc. | Methods of forming rugged electrically conductive surfaces and layers |
-
2004
- 2004-06-18 FR FR0406674A patent/FR2871935A1/fr active Pending
-
2005
- 2005-06-07 EP EP05775544A patent/EP1774576A1/fr not_active Withdrawn
- 2005-06-07 CN CN200580016703.2A patent/CN1957442A/zh active Pending
- 2005-06-07 WO PCT/FR2005/001400 patent/WO2006008356A1/fr active Application Filing
- 2005-06-07 JP JP2007515985A patent/JP2008503077A/ja active Pending
- 2005-06-07 US US11/570,731 patent/US7781296B2/en active Active
-
2010
- 2010-08-23 US US12/861,256 patent/US8975682B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2006008356A1 (fr) | 2006-01-26 |
JP2008503077A (ja) | 2008-01-31 |
FR2871935A1 (fr) | 2005-12-23 |
US7781296B2 (en) | 2010-08-24 |
US20100320567A1 (en) | 2010-12-23 |
EP1774576A1 (fr) | 2007-04-18 |
US8975682B2 (en) | 2015-03-10 |
US20080185681A1 (en) | 2008-08-07 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: ROYAL PHILIPS ELECTRONICS CO., LTD. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20100429 Address after: France grams Ruo Lin Si Applicant after: ST Microelectronics Crolles 2 S. Co-applicant after: Koninkl Philips Electronics NV Address before: France grams Ruo Lin Si Applicant before: ST Microelectronics Crolles 2 S. Co-applicant before: Koninklike Philips Electronics N. V. |
|
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20070502 |