CN1938785A - 使用由栅极引起的接面泄漏电流的快闪存储器编程 - Google Patents

使用由栅极引起的接面泄漏电流的快闪存储器编程 Download PDF

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Publication number
CN1938785A
CN1938785A CNA2004800365359A CN200480036535A CN1938785A CN 1938785 A CN1938785 A CN 1938785A CN A2004800365359 A CNA2004800365359 A CN A2004800365359A CN 200480036535 A CN200480036535 A CN 200480036535A CN 1938785 A CN1938785 A CN 1938785A
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CN
China
Prior art keywords
gate
substrate
bias
applying
region
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Pending
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CNA2004800365359A
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English (en)
Chinese (zh)
Inventor
杰弗里·W·卢策
庞产绥
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SanDisk Corp
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SanDisk Corp
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Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of CN1938785A publication Critical patent/CN1938785A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNA2004800365359A 2003-11-07 2004-11-04 使用由栅极引起的接面泄漏电流的快闪存储器编程 Pending CN1938785A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/703,717 US7057931B2 (en) 2003-11-07 2003-11-07 Flash memory programming using gate induced junction leakage current
US10/703,717 2003-11-07

Publications (1)

Publication Number Publication Date
CN1938785A true CN1938785A (zh) 2007-03-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004800365359A Pending CN1938785A (zh) 2003-11-07 2004-11-04 使用由栅极引起的接面泄漏电流的快闪存储器编程

Country Status (7)

Country Link
US (1) US7057931B2 (https=)
EP (1) EP1687826A2 (https=)
JP (1) JP2007511076A (https=)
KR (1) KR20060120078A (https=)
CN (1) CN1938785A (https=)
TW (1) TWI274348B (https=)
WO (1) WO2005048269A2 (https=)

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CN102024494A (zh) * 2009-09-11 2011-04-20 中芯国际集成电路制造(上海)有限公司 绿色晶体管、电阻随机存储器及其驱动方法
CN104637537A (zh) * 2014-11-17 2015-05-20 上海华力微电子有限公司 一种闪存器件及其编程方法
TWI824233B (zh) * 2020-02-12 2023-12-01 美商新思科技股份有限公司 具有漏電流中的統計變化之動態隨機存取記憶體通路電晶體的設計

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US8995188B2 (en) 2013-04-17 2015-03-31 Micron Technology, Inc. Sharing support circuitry in a memory
JP6739327B2 (ja) * 2016-12-27 2020-08-12 ルネサスエレクトロニクス株式会社 半導体装置
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CN114695370B (zh) * 2022-05-31 2023-03-24 广州粤芯半导体技术有限公司 半导体结构及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024494A (zh) * 2009-09-11 2011-04-20 中芯国际集成电路制造(上海)有限公司 绿色晶体管、电阻随机存储器及其驱动方法
CN102024494B (zh) * 2009-09-11 2014-01-08 中芯国际集成电路制造(上海)有限公司 绿色晶体管、电阻随机存储器及其驱动方法
CN104637537A (zh) * 2014-11-17 2015-05-20 上海华力微电子有限公司 一种闪存器件及其编程方法
CN104637537B (zh) * 2014-11-17 2019-02-19 上海华力微电子有限公司 一种闪存器件及其编程方法
TWI824233B (zh) * 2020-02-12 2023-12-01 美商新思科技股份有限公司 具有漏電流中的統計變化之動態隨機存取記憶體通路電晶體的設計

Also Published As

Publication number Publication date
EP1687826A2 (en) 2006-08-09
US20050099849A1 (en) 2005-05-12
WO2005048269A2 (en) 2005-05-26
WO2005048269A3 (en) 2005-07-28
TW200537504A (en) 2005-11-16
TWI274348B (en) 2007-02-21
US7057931B2 (en) 2006-06-06
JP2007511076A (ja) 2007-04-26
KR20060120078A (ko) 2006-11-24

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