CN1930928A - 具有导电特性的部分蚀刻的电介质膜 - Google Patents

具有导电特性的部分蚀刻的电介质膜 Download PDF

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Publication number
CN1930928A
CN1930928A CNA2005800081012A CN200580008101A CN1930928A CN 1930928 A CN1930928 A CN 1930928A CN A2005800081012 A CNA2005800081012 A CN A2005800081012A CN 200580008101 A CN200580008101 A CN 200580008101A CN 1930928 A CN1930928 A CN 1930928A
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China
Prior art keywords
dielectric film
metal
conductive
array
dielectric
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Pending
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CNA2005800081012A
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Chinese (zh)
Inventor
丹尼斯·M·布鲁纳
大卫·L·比斯特尔
麦克尔·S·格拉夫
丹尼尔·K·吕贝特
内森·P·库特尔
杨瑞
毛国平
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN1930928A publication Critical patent/CN1930928A/zh
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Wire Bonding (AREA)
CNA2005800081012A 2004-01-29 2005-01-13 具有导电特性的部分蚀刻的电介质膜 Pending CN1930928A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53995904P 2004-01-29 2004-01-29
US60/539,959 2004-01-29

Publications (1)

Publication Number Publication Date
CN1930928A true CN1930928A (zh) 2007-03-14

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CNA2005800081012A Pending CN1930928A (zh) 2004-01-29 2005-01-13 具有导电特性的部分蚀刻的电介质膜

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Country Link
US (2) US7012017B2 (enExample)
EP (1) EP1709848A1 (enExample)
JP (1) JP2007520081A (enExample)
KR (1) KR20060124730A (enExample)
CN (1) CN1930928A (enExample)
CA (1) CA2554750A1 (enExample)
WO (1) WO2005074339A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4628154B2 (ja) * 2005-03-22 2011-02-09 三井金属鉱業株式会社 フレキシブルプリント配線基板、および半導体装置
US7829793B2 (en) * 2005-09-09 2010-11-09 Magnecomp Corporation Additive disk drive suspension manufacturing using tie layers for vias and product thereof
US8395866B1 (en) 2005-09-09 2013-03-12 Magnecomp Corporation Resilient flying lead and terminus for disk drive suspension
US7781679B1 (en) * 2005-09-09 2010-08-24 Magnecomp Corporation Disk drive suspension via formation using a tie layer and product
US8553364B1 (en) 2005-09-09 2013-10-08 Magnecomp Corporation Low impedance, high bandwidth disk drive suspension circuit
US8764664B2 (en) 2005-11-28 2014-07-01 Vizyontech Imaging, Inc. Methods and apparatus for conformable medical data acquisition pad and configurable imaging system
US20080044623A1 (en) * 2006-08-21 2008-02-21 John Caldwell Probe card for testing imaging devices, and methods of fabricating same
KR100752672B1 (ko) * 2006-09-06 2007-08-29 삼성전자주식회사 신뢰성 있는 범프 접속 구조를 갖는 인쇄 회로 기판 및 그제조방법, 및 이를 이용한 반도체 패키지
US20080083706A1 (en) * 2006-10-05 2008-04-10 Mu-Gahat Enterprises, Llc Reverse side film laser circuit etching
US7633035B2 (en) * 2006-10-05 2009-12-15 Mu-Gahat Holdings Inc. Reverse side film laser circuit etching
US7813082B2 (en) * 2007-01-26 2010-10-12 Hutchinson Technology Incorporated Head suspension flexure with inline lead portions positioned at a level between levels of first and second surfaces of the spring metal layer
US7835112B2 (en) 2007-02-12 2010-11-16 Hutchinson Technology Incorporated Integrated lead flexure with embedded traces
FR2914304B1 (fr) 2007-03-28 2012-11-16 Guerbet Sa Composes pour le diagnostic de maladies liees a l'expression de vcam.
US20080237882A1 (en) * 2007-03-30 2008-10-02 Islam Salama Annular via drilling (AVD) technology
US20090061251A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by additive deposition
US20090061112A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by subtractive deposition
EP2418479B1 (en) 2009-04-07 2013-10-23 Panasonic Corporation Sensor chip and measuring device and blood test device in which this sensor chip is used
WO2012061184A1 (en) 2010-11-03 2012-05-10 3M Innovative Properties Company Flexible led device and method of making
WO2012061183A2 (en) 2010-11-03 2012-05-10 3M Innovative Properties Company Flexible led device for thermal management and method of making
CA2719927C (en) 2010-11-05 2014-04-29 Ibm Canada Limited - Ibm Canada Limitee Laser ashing of polyimide for semiconductor manufacturing
US10014456B2 (en) 2014-03-25 2018-07-03 3M Innovative Properties Company Flexible circuits with coplanar conductive features and methods of making same
US10204737B2 (en) 2014-06-11 2019-02-12 Avx Corporation Low noise capacitors
FR3030112B1 (fr) * 2014-12-12 2018-02-02 Stmicroelectronics (Crolles 2) Sas Assemblage d'une puce de circuits integres et d'une plaque
CN208657154U (zh) * 2015-03-20 2019-03-26 3M创新有限公司 用于附接发光半导体装置的柔性多层基板
WO2017222862A1 (en) 2016-06-23 2017-12-28 3M Innovative Properties Company Flexible thermoelectric module
WO2017222853A1 (en) 2016-06-23 2017-12-28 3M Innovative Properties Company Thermoelectric tape
EP3475991B1 (en) 2016-06-23 2020-04-01 3M Innovative Properties Company Flexible thermoelectric module
KR102456361B1 (ko) 2017-09-11 2022-10-19 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 유전체 필름 형성 조성물
US11018024B2 (en) * 2018-08-02 2021-05-25 Nxp Usa, Inc. Method of fabricating embedded traces
KR102882272B1 (ko) * 2022-04-29 2025-11-06 주식회사 아모그린텍 세라믹 기판 제조방법

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
US5248446A (en) * 1988-08-26 1993-09-28 Idemitsu Kosan Co., Ltd. Liquid-crystalline copolymer
CA2012337A1 (en) 1989-03-17 1990-09-17 Masaru Kamimura Chip carrier
US5208066A (en) * 1989-03-18 1993-05-04 Hitachi, Ltd. Process of forming a patterned polyimide film and articles including such a film
JP3245437B2 (ja) 1991-04-05 2002-01-15 株式会社クラレ 積層体の製造方法
US5227008A (en) 1992-01-23 1993-07-13 Minnesota Mining And Manufacturing Company Method for making flexible circuits
US5401913A (en) 1993-06-08 1995-03-28 Minnesota Mining And Manufacturing Company Electrical interconnections between adjacent circuit board layers of a multi-layer circuit board
JP2939477B2 (ja) 1994-08-16 1999-08-25 エイチエヌエイ・ホールディングス・インコーポレーテッド 液晶重合体−金属積層品および該積層品の製造法
US5747358A (en) 1996-05-29 1998-05-05 W. L. Gore & Associates, Inc. Method of forming raised metallic contacts on electrical circuits
US6085414A (en) 1996-08-15 2000-07-11 Packard Hughes Interconnect Company Method of making a flexible circuit with raised features protruding from two surfaces and products therefrom
JPH1064956A (ja) * 1996-08-20 1998-03-06 Fujitsu Ltd フェースダウンボンディング半導体装置
US6882030B2 (en) 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
EP0902048B1 (en) * 1997-09-11 2005-11-23 E.I. Du Pont De Nemours And Company High dielectric constant flexible polyimide film and process of preparation
US6313402B1 (en) 1997-10-29 2001-11-06 Packard Hughes Interconnect Company Stress relief bend useful in an integrated circuit redistribution patch
JP3080047B2 (ja) 1997-11-07 2000-08-21 日本電気株式会社 バンプ構造体及びバンプ構造体形成方法
US6222136B1 (en) 1997-11-12 2001-04-24 International Business Machines Corporation Printed circuit board with continuous connective bumps
US6077560A (en) 1997-12-29 2000-06-20 3M Innovative Properties Company Method for continuous and maskless patterning of structured substrates
JP2000106482A (ja) * 1998-07-29 2000-04-11 Sony Chem Corp フレキシブル基板製造方法
JP3502776B2 (ja) 1998-11-26 2004-03-02 新光電気工業株式会社 バンプ付き金属箔及び回路基板及びこれを用いた半導体装置
US6537854B1 (en) 1999-05-24 2003-03-25 Industrial Technology Research Institute Method for bonding IC chips having multi-layered bumps with corrugated surfaces and devices formed
US6322903B1 (en) 1999-12-06 2001-11-27 Tru-Si Technologies, Inc. Package of integrated circuits and vertical integration
ATE277865T1 (de) 2000-01-31 2004-10-15 Diagnoswiss Sa Verfahren zur herstellung von mikrostrukturen mit verschiedenen oberflächeneigenschaften in einem multischichtkörper durch plasmaätzen
US6555908B1 (en) 2000-02-10 2003-04-29 Epic Technologies, Inc. Compliant, solderable input/output bump structures
AU2001214479A1 (en) 2000-06-29 2002-01-14 3M Innovative Properties Company Multi-metal layer circuit
US6923919B2 (en) 2000-07-18 2005-08-02 3M Innovative Properties Company Liquid crystal polymers for flexible circuits
US6403211B1 (en) 2000-07-18 2002-06-11 3M Innovative Properties Company Liquid crystal polymer for flexible circuits
US7348045B2 (en) 2002-09-05 2008-03-25 3M Innovative Properties Company Controlled depth etched dielectric film
US6696163B2 (en) 2000-07-18 2004-02-24 3M Innovative Properties Company Liquid crystal polymers for flexible circuits
US6391932B1 (en) * 2000-08-08 2002-05-21 Shipley Company, L.L.C. Porous materials
US6375062B1 (en) 2000-11-06 2002-04-23 Delphi Technologies, Inc. Surface bumping method and structure formed thereby
JPWO2002067641A1 (ja) * 2001-02-21 2004-06-24 鐘淵化学工業株式会社 配線基板およびその製造方法、並びに該配線基板に用いられるポリイミドフィルムおよび該製造方法に用いられるエッチング液
US6498381B2 (en) 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
US6611046B2 (en) 2001-06-05 2003-08-26 3M Innovative Properties Company Flexible polyimide circuits having predetermined via angles
US7202556B2 (en) 2001-12-20 2007-04-10 Micron Technology, Inc. Semiconductor package having substrate with multi-layer metal bumps
US7267883B2 (en) * 2002-09-25 2007-09-11 Kaneka Corporation Polyimide film and laminate having metal layer and same

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