CN1925177A - 半导体发光器件、其结构单元及制造方法 - Google Patents
半导体发光器件、其结构单元及制造方法 Download PDFInfo
- Publication number
- CN1925177A CN1925177A CNA2005100996297A CN200510099629A CN1925177A CN 1925177 A CN1925177 A CN 1925177A CN A2005100996297 A CNA2005100996297 A CN A2005100996297A CN 200510099629 A CN200510099629 A CN 200510099629A CN 1925177 A CN1925177 A CN 1925177A
- Authority
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- China
- Prior art keywords
- compound semiconductor
- based compound
- nitride
- layer
- bonding metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 162
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 107
- 239000002184 metal Substances 0.000 claims abstract description 107
- 239000000758 substrate Substances 0.000 claims description 163
- 150000001875 compounds Chemical class 0.000 claims description 149
- 150000004767 nitrides Chemical class 0.000 claims description 149
- 238000000034 method Methods 0.000 claims description 28
- 229910052594 sapphire Inorganic materials 0.000 claims description 28
- 239000010980 sapphire Substances 0.000 claims description 28
- 238000010276 construction Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910017464 nitrogen compound Inorganic materials 0.000 abstract 3
- 150000002830 nitrogen compounds Chemical class 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP255953/2004 | 2004-09-02 | ||
JP2004255953A JP4371956B2 (ja) | 2004-09-02 | 2004-09-02 | 窒化物系化合物半導体発光素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1925177A true CN1925177A (zh) | 2007-03-07 |
CN100514682C CN100514682C (zh) | 2009-07-15 |
Family
ID=35941783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100996297A Expired - Fee Related CN100514682C (zh) | 2004-09-02 | 2005-08-30 | 半导体发光器件、其结构单元及制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7554124B2 (zh) |
JP (1) | JP4371956B2 (zh) |
CN (1) | CN100514682C (zh) |
TW (1) | TWI266462B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009117850A1 (en) * | 2008-03-26 | 2009-10-01 | Lattice Power (Jiangxi) Corporation | Method for fabricating highly reflective ohmic contact in light-emitting devices |
CN102027604A (zh) * | 2008-04-02 | 2011-04-20 | Lg伊诺特有限公司 | 发光器件及其制造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100388517C (zh) | 2004-07-08 | 2008-05-14 | 夏普株式会社 | 氮化物系化合物半导体发光元件及其制造方法 |
JP2006073619A (ja) * | 2004-08-31 | 2006-03-16 | Sharp Corp | 窒化物系化合物半導体発光素子 |
JP4371956B2 (ja) | 2004-09-02 | 2009-11-25 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
JP4767035B2 (ja) * | 2005-04-12 | 2011-09-07 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
US7696523B2 (en) * | 2006-03-14 | 2010-04-13 | Lg Electronics Inc. | Light emitting device having vertical structure and method for manufacturing the same |
US7687811B2 (en) * | 2006-03-21 | 2010-03-30 | Lg Electronics Inc. | Vertical light emitting device having a photonic crystal structure |
TWI305960B (en) * | 2006-06-16 | 2009-02-01 | Opto Tech Corp | Light emitting diode and method manufacturing the same |
JP2008091862A (ja) | 2006-09-08 | 2008-04-17 | Sharp Corp | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP2008117824A (ja) | 2006-11-01 | 2008-05-22 | Sharp Corp | 窒化物系半導体素子の製造方法 |
JP5077068B2 (ja) * | 2007-05-30 | 2012-11-21 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
JP2010067890A (ja) * | 2008-09-12 | 2010-03-25 | Hitachi Cable Ltd | 発光素子 |
KR100974776B1 (ko) * | 2009-02-10 | 2010-08-06 | 엘지이노텍 주식회사 | 발광 소자 |
JP2010267813A (ja) * | 2009-05-14 | 2010-11-25 | Toshiba Corp | 発光素子及びその製造方法 |
JP5148647B2 (ja) * | 2010-03-05 | 2013-02-20 | 株式会社東芝 | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
JP6245791B2 (ja) * | 2012-03-27 | 2017-12-13 | 日亜化学工業株式会社 | 縦型窒化物半導体素子およびその製造方法 |
US8686571B2 (en) * | 2012-08-09 | 2014-04-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding layer structure and method for wafer to wafer bonding |
US20160013363A1 (en) | 2014-07-08 | 2016-01-14 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
JP6633881B2 (ja) * | 2015-09-30 | 2020-01-22 | ローム株式会社 | Led照明器具およびその製造方法 |
JP7166818B2 (ja) * | 2018-07-13 | 2022-11-08 | スタンレー電気株式会社 | 光半導体素子 |
CN111180995A (zh) * | 2019-11-19 | 2020-05-19 | 浙江博升光电科技有限公司 | 基底转移垂直腔面发射激光器及其制造方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4605942A (en) | 1984-10-09 | 1986-08-12 | At&T Bell Laboratories | Multiple wavelength light emitting devices |
JP3259811B2 (ja) | 1995-06-15 | 2002-02-25 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
DE19632626A1 (de) * | 1996-08-13 | 1998-02-19 | Siemens Ag | Verfahren zum Herstellen von Halbleiterkörpern mit MOVPE-Schichtenfolge |
US6210479B1 (en) | 1999-02-26 | 2001-04-03 | International Business Machines Corporation | Product and process for forming a semiconductor structure on a host substrate |
JP2000091636A (ja) * | 1998-09-07 | 2000-03-31 | Rohm Co Ltd | 半導体発光素子の製法 |
US6169294B1 (en) * | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
US6201264B1 (en) * | 1999-01-14 | 2001-03-13 | Lumileds Lighting, U.S., Llc | Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
JP2001168388A (ja) * | 1999-09-30 | 2001-06-22 | Sharp Corp | 窒化ガリウム系化合物半導体チップ及びその製造方法ならびに窒化ガリウム系化合物半導体ウエハー |
US6573537B1 (en) * | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
US6570186B1 (en) * | 2000-05-10 | 2003-05-27 | Toyoda Gosei Co., Ltd. | Light emitting device using group III nitride compound semiconductor |
US6562648B1 (en) * | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
JP2002280602A (ja) * | 2001-03-21 | 2002-09-27 | Toshiba Corp | 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光送信モジュール |
US6723165B2 (en) * | 2001-04-13 | 2004-04-20 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating Group III nitride semiconductor substrate |
JP3962282B2 (ja) | 2002-05-23 | 2007-08-22 | 松下電器産業株式会社 | 半導体装置の製造方法 |
CN100595937C (zh) * | 2002-08-01 | 2010-03-24 | 日亚化学工业株式会社 | 半导体发光元件及发光装置 |
JP2004072052A (ja) | 2002-08-09 | 2004-03-04 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4004378B2 (ja) * | 2002-10-24 | 2007-11-07 | ローム株式会社 | 半導体発光素子 |
US20040130263A1 (en) * | 2003-01-02 | 2004-07-08 | Ray-Hua Horng | High brightness led and method for producing the same |
JP4362696B2 (ja) * | 2003-03-26 | 2009-11-11 | ソニー株式会社 | 発光素子およびその製造方法、ならびに表示装置 |
TWI234298B (en) * | 2003-11-18 | 2005-06-11 | Itswell Co Ltd | Semiconductor light emitting diode and method for manufacturing the same |
JP4868709B2 (ja) * | 2004-03-09 | 2012-02-01 | 三洋電機株式会社 | 発光素子 |
JP2006128602A (ja) | 2004-03-30 | 2006-05-18 | Sanyo Electric Co Ltd | 半導体レーザ装置およびその製造方法 |
JP5041653B2 (ja) | 2004-04-21 | 2012-10-03 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP4597796B2 (ja) | 2004-07-08 | 2010-12-15 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
CN100388517C (zh) * | 2004-07-08 | 2008-05-14 | 夏普株式会社 | 氮化物系化合物半导体发光元件及其制造方法 |
US20060017060A1 (en) * | 2004-07-26 | 2006-01-26 | Nai-Chuan Chen | Vertical conducting nitride diode using an electrically conductive substrate with a metal connection |
TWI374552B (en) * | 2004-07-27 | 2012-10-11 | Cree Inc | Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming |
JP2006073619A (ja) | 2004-08-31 | 2006-03-16 | Sharp Corp | 窒化物系化合物半導体発光素子 |
JP4371956B2 (ja) | 2004-09-02 | 2009-11-25 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
US20060151801A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Light emitting diode with thermo-electric cooler |
JP4767035B2 (ja) * | 2005-04-12 | 2011-09-07 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
-
2004
- 2004-09-02 JP JP2004255953A patent/JP4371956B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-30 CN CNB2005100996297A patent/CN100514682C/zh not_active Expired - Fee Related
- 2005-09-01 US US11/219,139 patent/US7554124B2/en active Active
- 2005-09-02 TW TW094130222A patent/TWI266462B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009117850A1 (en) * | 2008-03-26 | 2009-10-01 | Lattice Power (Jiangxi) Corporation | Method for fabricating highly reflective ohmic contact in light-emitting devices |
CN102017192B (zh) * | 2008-03-26 | 2013-01-23 | 晶能光电(江西)有限公司 | 在发光器件内制造高反射欧姆接触的方法 |
CN102027604A (zh) * | 2008-04-02 | 2011-04-20 | Lg伊诺特有限公司 | 发光器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006073822A (ja) | 2006-03-16 |
JP4371956B2 (ja) | 2009-11-25 |
CN100514682C (zh) | 2009-07-15 |
TW200614614A (en) | 2006-05-01 |
TWI266462B (en) | 2006-11-11 |
US20060043387A1 (en) | 2006-03-02 |
US7554124B2 (en) | 2009-06-30 |
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CI01 | Publication of corrected invention patent application |
Correction item: Priority Correct: 2004.09.02 JP 255953/2004 False: Missed priority Number: 10 Volume: 23 |
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CI02 | Correction of invention patent application |
Correction item: Priority Correct: 2004.09.02 JP 255953/2004 False: Missed priority Number: 10 Page: The title page Volume: 23 |
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Free format text: CORRECT: PRIORITY; FROM: LOU PRIORITY TO: 2004.9.2 JP 255953/2004 |
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