1241729 九、發明說明： 【發明所屬之技術領域】 方法與結構 【先前技術】 氮化銦鎵（InGaN)系列材料，在紫外光波段與藍綠 光波段具有直接能隙（direct bandgap，Eg)，因此可以作為 高效率之白光與可見光源。目前已商品化的產品有藍、 綠、紫外光與白光發光二極體（White Light-Emitting Diode ) ’以及藍紫光波段之雷射二極體（Laser Diode， LD)。但是，如何增進發光二極體元件的亮度，一直是此 研發領域中一個極為重要的課題，原則上元件的亮度並不 會隨著電流的增加而無限增大，而是受限於元件飽和電流 的因素。 在影響亮度的諸多因素中，元件的尺寸與元件的散熱 性扮演著關鍵性的影響力。若元件本身具有良好的散熱 性’不但使用壽命會增加，亦可將其應用領域延伸至高電 流需求的產品中。 中華民國專利公報公告號第567618號「具有黏結反 射層之發光二極體及其製法」中揭示一種具有黏結反射層 之發光二極體及其製法。藉由一透明黏結層將一發光二極 體及一金屬反射層黏結在一起，可用來提高發光二極體之 亮度。 1241729 另’本案相同申請人之中華民國專利公報公告號第 472400號「將半導體元件表面粗化以提昇外部量子效率的 方法」，其中提出一表面經控制成長溫度而粗化之化合物 半導體發光元件。對氮化I呂銦鎵系列之發光元件而言，此 發明得到之效果，相對於對照組，可使亮度提昇40%以上。 又美國專利申請號第2001/0042866號之1241729 IX. Description of the invention: [Technical field to which the invention belongs] Method and structure [Prior technology] Indium gallium nitride (InGaN) series materials have direct bandgap (Eg) in the ultraviolet and blue-green light bands, Therefore, it can be used as a high-efficiency white light and visible light source. Currently commercialized products include blue, green, ultraviolet and white light emitting diodes (White Light-Emitting Diodes) and laser diodes (LDs) in the blue-violet light band. However, how to improve the brightness of light-emitting diode elements has always been an extremely important subject in this research and development field. In principle, the brightness of elements does not increase infinitely with the increase of current, but is limited by the saturation current of the element. the elements of. Among the many factors that affect brightness, the size of the component and the heat dissipation of the component play a key influence. If the component itself has good heat dissipation, not only its service life will be increased, but its application field can also be extended to products with high current requirements. In the Republic of China Patent Gazette Publication No. 567618, "Light Emitting Diode with Bonded Reflective Layer and Its Manufacturing Method" discloses a light emitting diode with a bonded reflective layer and its manufacturing method. A light-emitting diode and a metal reflective layer are bonded together by a transparent bonding layer, which can be used to improve the brightness of the light-emitting diode. 1241729 In addition, the Republic of China Patent Gazette No. 472400 of the same applicant of the present case "Method for roughening the surface of a semiconductor element to improve external quantum efficiency", which proposes a compound semiconductor light-emitting element whose surface is roughened by controlling the growth temperature. For the light-emitting elements of the Lu InGa series, the effect obtained by this invention can increase the brightness by more than 40% compared with the control group. US Patent Application No. 2001/0042866
「INXALYGAZN OPTICAL EMITTERS FABRICATED VIA SUBSTRATE REMOVAL」揭示一種利用金屬結合的方式來 形成高亮度之發光二極體，其利用一金屬反射層來反射活 性層所產生的光，而避免了基板吸光的問題；且利用金屬 黏結層將發光二極體磊晶層粘著到一散熱性良好的基板 上，如：矽（Si)，及金屬基板上，而大幅改善了發光二極 體的散熱特性，但此一方法如要生產良率高，則必須待結 合的發光一極體蠢晶片及散熱良好的基板兩者的表面都 非常平整，但通常發光二極體磊晶片表面會有突出物或粒 子在表面，且磊晶片通常是彎曲的，所以使得晶片結合較 困難。 【發明内容】 爰疋，本發明之主要目的在於解決上述習知之缺失， 避免缺失存在，係在提供一種具有良好的散熱性之半導體 發光元件及其製法，由於元件本身具有良好的散熱性，將 更適合應用在高電流需求的發光二極體中。 本發明之另一目的，係在在於提供一種具有增進亮度 之半導體發光元件，尤其針對以藍寶石為基底之半導體發 1241729 光元件。 為達上述之目的，對使用藍寶石（Sapphire)基底10之氮 化銦鎵（InGaN)系列材料高功率藍色及綠色發光二極體 (LED)，且形成後之元件晶粒，為一從正面射出的覆晶 (flip-chip)樣態發光元件而言。針對藍寶石基底之發光元 件’在其上成長具P/N接面的發光二極體磊晶層，包含至 少一具第一導電性磊晶層，一發光的活性層，一第二導電 性磊晶層，一歐姆接觸層，其製程為先形成一半導體缓衝 層再形成前述必要之堆疊結構’及一反射層，和^一第一電 極位於前述堆疊結構之第一導電性磊晶層暴露出之部 分，其特徵在於該第一電極與部分之反射層區域外，鍍上 一厚度為50至100// m作為阻隔用之阻隔壁於該第一電極 與部分之反射層區域外上方，再以電鍍方式形成一於前述 非阻隔壁之區域上，且不低於該阻隔壁厚度之金屬柱，最 後利用一準分子雷射均勻照射在藍寶石基底上，促使藍寶 石基底脫離該半導體缓衝層；更進一步以腐蝕法腐蝕該第 一導電性磊晶層表面，促使該第一導電性磊晶層表面成粗 糙樣態。 如是完成一結構由上而下依序為一表面成粗糙面的 第一導電性磊晶層、一發光的活性層、一第二導電磊晶 層、一歐姆接觸層、一反射層，及一第一電極位於前述堆 疊結構第一導電性磊晶層暴露出之部分，一阻隔壁於該第 一電極與部分之反射層區域外下方，一金屬柱形成於前述 非阻隔壁之區域。 1241729 俾藉該電鍍方式形成之導熱佳之金屬柱使封裝後之 半導體發光元件之導電電極具有良好的散熱性，對於需大 電流之高功率藍色及綠色發光二極體(led)將使元件本身 具有良好的散熱性，將更適合應用在高電流需求的發光二 極體中；同時，該表面成粗糙表面之第一導電性磊晶層， 光的取出效率將因為全反射機率的降低而降低，促使半導 體發光元件之亮度增加。 【實施方式】 茲有關本發明之詳細内容及技術說明，現配合圖式說 明如下： 首先本發明之方法中建立在基材上之各層物質，可 以經由熟習本項技藝者所知悉之方法來執行，例如有機 氣相分子沉積（MOCVD)、分子束磊晶成長（molecular beam epitaxy，MBE)製程、氫化物氣相磊晶成長（hydride vapor phase epitaxy，HVPE)製程。 請先參閱『第1圖』所示，係本發明實施前半導體發 光元件之結構示意圖。如圖所示：本發明係針對使用藍寶 石基底10之氮化銦鎵（InGaN)系列材料高功率藍色及綠 色發光二極體(LED)，且形成後之元件晶粒，為一從正面 射出的覆晶（flip-chip)樣態發光元件，其製作方法步驟及該 方法製作之半導體發光元件為： 先形成一半導體緩衝層20於該藍寶石基底10上，其中 半導體緩衝層20係為一 III-V(三/五)族化合物半導體，如： 氮化鎵(GaN)，形成一第一導電性磊晶層30覆蓋在該半導 體緩衝層20上，形成一發光的活性層40於該第一導電性蟲 1241729 晶層30上，形成一第二導電性磊晶層5〇於該活性層4〇上。 其中，該第一導電性磊晶層30、第二導電性磊晶層5〇為任 何習知或未來中可見者之半導體材料，較佳者為ΠΙ_ν(三/ 五）族化合物半導體，例如氮化鋁鎵銦(AlxGayIni_x_yN)，其 中（〇$x$l，0$y$l，〇$x+yg U，並視情況進一步被p/N 型摻質所摻雜，此等材料之種類與性質，為熟習本技藝之 人士所共知。而該活性層4〇亦為任何習知或未來中可見者 之半導體材料與結構，例如氮化鋁鎵銦(A1GaInN)、磷化 銘蘇姻（AlGalnP) ’結構為皁量子井（singie Quantuni Well， SQW)、多量子井(Multiple Quantum Well, MQW)與雙異質 (Double Heterosture, DH) 〇 利用微影姓刻方法移除部分第二導電性磊晶層5〇及 活性層40，並暴露出部分之第一導電性磊晶層3〇後，形成 一第一電極31於該第一導電性磊晶層3〇暴露出之部分 上。再於該第二導電性磊晶層50上鍍一層歐姆接觸層60， 其材質可為金屬如Ni (鎳）/Au (金）或氧化銦錫（indium tin oxide，ITO)、ZnO (氧化鋅）等材料。再於該歐姆接觸 層60上鍍上一反射層70，該反射層7〇係為一反射率大於8〇 %以上之銘（A1)、銀(Ag)、金（Au)等材質，用以反射該活 性層40所產生的光。如是完成如『第1圖』之結構示意圖。 請再參閱『第2圖』所示，為本發明方法實施過程中 半導體發光元件結構示意圖，本發明係在如前述『第1圖』 之結構之後續製程中，鍍上一厚度為5〇至ιοονπι作為阻隔 用之阻隔壁80 ’其中該阻隔壁8〇材料係為聚亞醯胺 1241729 (polyimide)、苯環丁烯（bisbenzocyclobutene，BCB)以及光阻 劑（photoresist)中選出之一。利用微影姓刻方法移除於該 第一電極31與部分反射層70之區域外的阻隔壁，再以電鍍 方式於該區域上形成一金屬柱90做為半導體發光元件之 電極，且厚度不低於該阻隔壁80厚度，其中該金屬柱90材 質係可為鋁（A1)、銀(Ag)、金（Au)、鎳(Ni)、銅（Cu)、錫 (Sn)中選出之一。 如是，俾藉電鍍方式形成導熱佳之金屬柱90使封裝 後之半導體發光元件之導電電極具有良好的散熱性，對於 需大電流之高功率藍色及綠色發光二極體(LED)將使元件 本身具有良好的散熱性；同時該金屬柱90對一從正面射 出的覆晶（flip-chip)樣態之發光元件而言，其提供一具強力 支撐之功能。 最後其半導體發光元件之製作方法進一步包括利用 一準分子雷射（最佳實施係為一能量密度400mJ/cm2，波 長248nm，脈衝寬度38ns之KrF準分子雷射）均勻照射 在藍寶石基底10上，並置於升溫至60°C之加熱板促使藍 寶石基底10脫離該半導體緩衝層20之雷射分離法（laser lift-off)。 完成該藍寶石基底10分離之步驛後，請再參閱『第3 圖』所示，係本發明方法製作之半導體發光元件示意圖， 本發明更進一步利用如氫氧化鉀(K0H)之溶液，以腐蝕法 腐蝕該第一導電性磊晶層30表面，促使該第一導電性磊 晶層30表面成粗糙表面。藉此粗糙表面將使活性層4〇光 1241729 的取出效率因為全反射機率的降低而增加，使發光元件之 光取出效率增加，其詳細理論與功效可見本案相同申請人 之中華民國專利公報公告號第472400號「將半導體元件 表面粗化以提昇外部量子效率的方法」。對氮化紹銦錄 (AlGalnN)系列之發光元件而言，此發明得到之效果相對於 對照組，可使亮度提昇40%以上。 本發明需特別注意之地方，係當後續封裝製程溫度若 大於4〇0°C時，該阻隔壁80就必需移除，避免於後續封裝 製程中該阻隔壁80熔化，造成產品不良。 綜合前述，本發明方法製作之半導體發光元件係一種 針對藍寶石基底10之發光元件，且形成後之元件晶粒，為 一從正面射出的覆晶（flip-chip)樣態發光元件，其結構由上 而下依序為包含至少一第一導電性蠢晶層3〇、一活性層 40、一第二導電性磊晶層5〇、一歐姆接觸層6〇、一反射層 7〇，及一第一電極31位於前述堆疊結構第一導電性磊晶層 30暴露出之部分，其特徵在於： 一阻隔壁80於該第一電極31與部分之反射層70區域 外下方，一不小於該阻隔壁80厚度之金屬柱90形成於前述 非阻隔壁80之區域，且該第一導電性磊晶層30表面被腐蝕 成為一粗輪表面。 其中’該阻隔壁80之厚度為5〇至1〇〇 ，材料為 聚亞酿胺（polyimide)、苯環丁烯(bisbenz〇cycl〇butene BCB) 以及光阻劑（photoresist)中選出之一。而，該金屬柱9〇 材質係為鋁(A1)、銀(Ag)、金（Au)中選出之一。 1241729 但’當後續封裝製程溫度若大於400°C時，該阻隔壁 80就必兩移除，避免於後續封裝製程中該阻隔壁80溶化， 造成產品不良。 如疋’俾藉該電鑛方式形成之導熱佳之金屬柱90使 封裝後之半導體發光元件之導電電極具有良好的散熱 性’對於需大電流之高功率藍色及綠色發光二極體(LED) 將使疋件本身具有良好的散熱性，將更適合應用在高電流 需求的發光二極體中；且，該金屬柱9〇對一從正面射出 的覆晶（flip-chip)樣態之發光元件而言，其提供一具強力支 撐之功能。同時，該表面成粗糙表面之η型·半導體層3〇 促使活性層40的光取出效率因全反射機率降低而增加， 使半導體發光元件之亮度增加。 惟上述僅為本發明之較佳實施例而已，並非用來限定 本發明實施之範圍。即凡依本發明申請專利範圍所做的均 等變化與修飾，皆為本發明專利範圍所涵蓋。 【圖式簡單說明】 第1圖，係本發明實施前半導體發光元件之結構示意圖。 第2圖，係本發明方法實施過程中半導體發光元件結構示 意圖。 第3圖，係本發明方法製作之半導體發光元件示意圖。 【主要元件符號說明】 10 :藍寶石基底 20 :半導體缓衝層 30 :第一導電性磊晶層 12 1241729 31 :第^一電極 40 ·•活性層 50:第二導電性蠢晶層 60 :歐姆接觸層 70 ··反射層 80 :阻隔壁 90 :金屬柱"INXALYGAZN OPTICAL EMITTERS FABRICATED VIA SUBSTRATE REMOVAL" discloses a method for forming a high-brightness light-emitting diode by using a metal bonding method, which uses a metal reflective layer to reflect the light generated by the active layer, thereby avoiding the problem of light absorption by the substrate; and The metal bonding layer is used to adhere the light emitting diode epitaxial layer to a substrate with good heat dissipation, such as silicon (Si), and a metal substrate, and the heat dissipation characteristics of the light emitting diode are greatly improved. If the method is to produce high yield, the surfaces of both the light-emitting diode chip and the substrate with good heat dissipation must be very flat, but usually the surface of the light-emitting diode chip has protrusions or particles on the surface. And wafers are usually curved, which makes wafer bonding difficult. [Summary of the Invention] The main purpose of the present invention is to solve the above-mentioned conventional shortcomings, to avoid the existence of the shortcomings, and to provide a semiconductor light-emitting device with good heat dissipation and its manufacturing method. More suitable for application in light-emitting diodes with high current requirements. Another object of the present invention is to provide a semiconductor light-emitting device with improved brightness, especially for a semiconductor-emitting 1241729 light-emitting device based on sapphire. In order to achieve the above-mentioned purpose, the high-power blue and green light-emitting diodes (LEDs) of the indium gallium nitride (InGaN) series materials using the sapphire substrate 10 are formed from the front side of the device. In terms of the flip-chip light emitting element that is emitted. For a sapphire-based light-emitting element, a light-emitting diode epitaxial layer having a P / N junction is grown thereon, including at least one first conductive epitaxial layer, a light-emitting active layer, and a second conductive epitaxial layer. A crystal layer and an ohmic contact layer are formed by first forming a semiconductor buffer layer and then forming the aforementioned necessary stacked structure 'and a reflective layer, and a first electrode located on the first conductive epitaxial layer of the stacked structure is exposed. The part is characterized in that the thickness of the first electrode and part of the reflective layer area is plated with a thickness of 50 to 100 // m as a barrier wall above the area of the first electrode and part of the reflective layer area. Then a metal pillar is formed on the non-barrier wall area by electroplating, and the thickness is not less than the thickness of the barrier wall. Finally, an excimer laser is evenly irradiated on the sapphire substrate to promote the sapphire substrate to escape from the semiconductor buffer layer. Further, the surface of the first conductive epitaxial layer is etched by an etching method to promote the surface of the first conductive epitaxial layer to be rough. If a structure is completed from top to bottom, a first conductive epitaxial layer with a rough surface on the surface, a light-emitting active layer, a second conductive epitaxial layer, an ohmic contact layer, a reflective layer, and a The first electrode is located in the exposed portion of the first conductive epitaxial layer of the stacked structure, a barrier wall is below the reflective layer region of the first electrode and a portion, and a metal pillar is formed in the region of the non-barrier wall. 1241729 佳 The metal pillars with good thermal conductivity formed by this plating method make the conductive electrodes of the packaged semiconductor light-emitting elements have good heat dissipation. For high-power blue and green light-emitting diodes that require large currents, the elements themselves With good heat dissipation, it will be more suitable for application in light-emitting diodes with high current requirements. At the same time, the surface becomes the first conductive epitaxial layer with a rough surface, and the light extraction efficiency will be reduced due to the reduction of the total reflection probability. , Promote the increase in brightness of semiconductor light emitting elements. [Embodiment] The detailed content and technical description of the present invention are described below with reference to the drawings: First, the layers of the substance established on the substrate in the method of the present invention can be implemented by methods known to those skilled in the art For example, organic vapor phase molecular deposition (MOCVD), molecular beam epitaxy (MBE) process, hydride vapor phase epitaxy (HVPE) process. Please refer to "Figure 1" for a schematic diagram of the structure of the semiconductor light emitting element before the implementation of the present invention. As shown in the figure, the present invention is directed to a high-power blue and green light-emitting diode (LED) using an indium gallium nitride (InGaN) series material using a sapphire substrate 10, and the formed element crystals are emitted from the front side. Flip-chip light-emitting device, the manufacturing method steps and the semiconductor light-emitting device manufactured by the method are: forming a semiconductor buffer layer 20 on the sapphire substrate 10, wherein the semiconductor buffer layer 20 is a III -V (three / five) compound semiconductors, such as: gallium nitride (GaN), forming a first conductive epitaxial layer 30 overlying the semiconductor buffer layer 20, forming a light-emitting active layer 40 on the first On the conductive layer 1241729, a second conductive epitaxial layer 50 is formed on the active layer 40. Wherein, the first conductive epitaxial layer 30 and the second conductive epitaxial layer 50 are any conventional or visible semiconductor materials, preferably a ΠΙ_ν (three / five) group compound semiconductor, such as nitrogen Aluminum gallium indium (AlxGayIni_x_yN), where (〇 $ x $ l, 0 $ y $ l, 〇x + yg U, and further doped with p / N type dopants as appropriate, the types of these materials and The properties are well known to those skilled in the art, and the active layer 40 is also any semiconductor material and structure that is known or will be seen in the future, such as aluminum gallium indium nitride (A1GaInN), phosphating Ming Suyin ( (AlGalnP) 'Structures are Singie Quantuni Well (SQW), Multiple Quantum Well (MQW), and Double Heterosture (DH). 〇Remove part of the second conductivity with lithography method After the crystal layer 50 and the active layer 40 are exposed, and a portion of the first conductive epitaxial layer 30 is exposed, a first electrode 31 is formed on the exposed portion of the first conductive epitaxial layer 30. An ohmic contact layer 60 is plated on the second conductive epitaxial layer 50, and the material may be metal such as Ni (nickel) / Au (Gold) or indium tin oxide (ITO), ZnO (zinc oxide) and other materials. A reflective layer 70 is plated on the ohmic contact layer 60. The reflective layer 70 has a reflectance greater than 8 〇% or more of the material (A1), silver (Ag), gold (Au) and other materials used to reflect the light generated by the active layer 40. If it is completed as shown in the structure diagram of "Figure 1", please refer to " Figure 2 "is a schematic diagram of the structure of a semiconductor light-emitting element during the implementation of the method of the present invention. The present invention is plated with a thickness of 50 to ιοονπι in the subsequent process of the structure as in the aforementioned" Figure 1 "as a barrier. Barrier wall 80 ', wherein the material of the barrier wall 80 is one selected from polyimide 1231729 (polyimide), bisbenzocyclobutene (BCB), and photoresist. The photolithography method is used to remove the barrier wall 80. In addition to the barrier wall outside the area of the first electrode 31 and the partially reflective layer 70, a metal pillar 90 is formed as an electrode of the semiconductor light-emitting element on the area by electroplating, and the thickness is not less than the thickness of the barrier wall 80 , Where the metal pillar 90 material can be One of aluminum (A1), silver (Ag), gold (Au), nickel (Ni), copper (Cu), and tin (Sn) is selected. If so, a metal pillar 90 with good thermal conductivity is formed by electroplating to make the packaged The conductive electrode of the semiconductor light-emitting element has good heat dissipation. For high-power blue and green light-emitting diodes (LEDs) that require large currents, the element itself has good heat dissipation. At the same time, the metal pillars 90 are emitted from the front side. For flip-chip light-emitting devices, it provides a strong support function. Finally, the method for manufacturing the semiconductor light emitting device further includes uniformly irradiating the sapphire substrate 10 with an excimer laser (a KrF excimer laser having an energy density of 400 mJ / cm2, a wavelength of 248 nm, and a pulse width of 38 ns). A heating plate heated to 60 ° C. is used to promote the sapphire substrate 10 to be separated from the semiconductor buffer layer 20 by a laser lift-off method. After the step of separating the sapphire substrate 10 is completed, please refer to "Figure 3" again, which is a schematic diagram of a semiconductor light-emitting element produced by the method of the present invention. The present invention further uses a solution such as potassium hydroxide (K0H) to etch The surface of the first conductive epitaxial layer 30 is etched by a method to promote a rough surface of the first conductive epitaxial layer 30. With this rough surface, the extraction efficiency of the active layer 40 light 1241729 is increased due to the reduction of the total reflection probability, and the light extraction efficiency of the light-emitting element is increased. The detailed theory and efficacy can be found in the Republic of China Patent Gazette No. No. 472400 "Method for roughening the surface of a semiconductor device to improve external quantum efficiency". For the AlGalnN series light-emitting devices, the effect obtained by this invention can increase the brightness by more than 40% compared with the control group. Where the present invention requires special attention, the barrier wall 80 must be removed when the subsequent packaging process temperature is greater than 400 ° C, to avoid the barrier wall 80 from melting during the subsequent packaging process, resulting in product failure. To sum up, the semiconductor light-emitting element manufactured by the method of the present invention is a light-emitting element for the sapphire substrate 10, and the formed element crystal grains are a flip-chip light-emitting element emitted from the front side. From top to bottom, it includes at least a first conductive stupid layer 30, an active layer 40, a second conductive epitaxial layer 50, an ohmic contact layer 60, a reflective layer 70, and a The first electrode 31 is located in the exposed part of the first conductive epitaxial layer 30 of the aforementioned stacked structure, and is characterized in that: a barrier wall 80 is below the area of the first electrode 31 and a part of the reflective layer 70, and is not less than the barrier The metal pillar 90 with the thickness of the wall 80 is formed in the region of the non-blocking wall 80 described above, and the surface of the first conductive epitaxial layer 30 is corroded into a rough wheel surface. Among them, the thickness of the barrier rib 80 is 50 to 100, and the material is one selected from polyimide, bisbenzcyclocyclene butene BCB, and photoresist. The material of the metal pillar 90 is one selected from aluminum (A1), silver (Ag), and gold (Au). 1241729 But when the temperature of the subsequent packaging process is greater than 400 ° C, the barrier wall 80 must be removed in two to avoid the barrier wall 80 from melting during the subsequent packaging process, which will cause product failure. For example, the metal pillar 90 with good thermal conductivity formed by the electric ore method makes the conductive electrode of the packaged semiconductor light-emitting element have good heat dissipation. For high-power blue and green light-emitting diodes (LEDs) that require large currents The component itself will have good heat dissipation and will be more suitable for application in light-emitting diodes with high current requirements; and the metal pillar 90 emits light in a flip-chip state emitted from the front side In terms of components, it provides a strong support function. At the same time, the surface of the n-type semiconductor layer 30 having a rough surface promotes the light extraction efficiency of the active layer 40 to increase due to a decrease in the total reflection probability, thereby increasing the brightness of the semiconductor light emitting element. However, the above are only preferred embodiments of the present invention and are not intended to limit the scope of implementation of the present invention. That is to say, all equivalent changes and modifications made according to the scope of patent application of the present invention are covered by the scope of patent of the present invention. [Brief description of the drawings] FIG. 1 is a schematic structural diagram of a semiconductor light emitting element before the implementation of the present invention. Fig. 2 is a schematic view showing the structure of a semiconductor light emitting element during the implementation of the method of the present invention. FIG. 3 is a schematic diagram of a semiconductor light-emitting element manufactured by the method of the present invention. [Description of main component symbols] 10: Sapphire substrate 20: Semiconductor buffer layer 30: First conductive epitaxial layer 12 1241729 31: First electrode 40 · Active layer 50: Second conductive stupid layer 60: Ohm Contact layer 70 · Reflective layer 80: Barrier wall 90: Metal pillar