TW200616243A - Semiconductor light emitting device and the method for manufacturing the same - Google Patents

Abstract

A semiconductor light emitting device and the method for manufacturing the device are disclosed. An insulation layer is formed on the first electrode and on some of the reflective layer of the device. A metal pillar is electroplated on the area with no insulation layer. An excimer laser uniformly irradiates the sapphire base to remove the sapphire base off the semiconductor buffer layer. An etching processing is preformed to coarsen the surface of the first conductive epitaxy layer. This design will dissipate the heat out of the packaged semiconductor light emitting device through the electrode and the metal pillar because the electrode and the metal pillar are good in heat conductivity. The disclosed structure is good in heat conductivity, so the invention can be applied to high power LEDs such as a blue LED or a green LED. Moreover, the coarsened surface of the first conductive epitaxy layer will increase the quantity of the retrieved light from the LED to raise the light intensity from the semiconductor light emitting device owing to the reduced possibility of total reflection.