TW200711160A - Light emitting diode device with porous surface layer and manufacturing method thereof - Google Patents
Light emitting diode device with porous surface layer and manufacturing method thereofInfo
- Publication number
- TW200711160A TW200711160A TW094131052A TW94131052A TW200711160A TW 200711160 A TW200711160 A TW 200711160A TW 094131052 A TW094131052 A TW 094131052A TW 94131052 A TW94131052 A TW 94131052A TW 200711160 A TW200711160 A TW 200711160A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- semiconductor stack
- emitting diode
- light emitting
- layer structure
- Prior art date
Links
Landscapes
- Led Devices (AREA)
Abstract
This invention relates to a kind of light emitting diode (LED) device with a porous surface layer, which comprises a AlInGaP semiconductor stack layer structure to be used for responding to conduction of electric current and thus generating light, and. an insulation reflection layer formed on part of surface of the bottom layer of the semiconductor stack layer structure to be used for forming current block and reflecting light generated from the semiconductor stack layer structure and projecting onto the insulation reflection layer, and, a porous metallic compound thin layer formed by diffusing metal material into the top layer of the semiconductor stack layer structure at high temperature and having its surface coarsened, and, in which the thin layer possesses functions of a window layer, a contact layer and surface coarsened in itself at the same time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094131052A TW200711160A (en) | 2005-09-09 | 2005-09-09 | Light emitting diode device with porous surface layer and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094131052A TW200711160A (en) | 2005-09-09 | 2005-09-09 | Light emitting diode device with porous surface layer and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200711160A true TW200711160A (en) | 2007-03-16 |
TWI293212B TWI293212B (en) | 2008-02-01 |
Family
ID=45067767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094131052A TW200711160A (en) | 2005-09-09 | 2005-09-09 | Light emitting diode device with porous surface layer and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200711160A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI572060B (en) * | 2015-11-20 | 2017-02-21 | 國立中興大學 | Light-emitting diode and manufacturing method thereof |
-
2005
- 2005-09-09 TW TW094131052A patent/TW200711160A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI293212B (en) | 2008-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200419831A (en) | Semiconductor light emitting device and manufacturing method thereof | |
TW200746468A (en) | Semiconductor light-emitting device and method of manufacturing the same | |
TW200709474A (en) | Light emitting diode employing an array of nonorods and method of fabricating the same | |
TW200629584A (en) | Light emitting device and manufacture method thereof | |
TWI266435B (en) | Nitride-based compound semiconductor light emitting device and fabricating method thereof | |
TW200703723A (en) | High-brightness light emitting diode having reflective layer | |
TW200746457A (en) | Semiconductor device and manufacturing method of semiconductor device | |
WO2006078462A3 (en) | Semiconductor light emitting device mounting substrates including a conductive lead extending therein and methods of packaging same | |
TW200620704A (en) | Nitride-based compound semiconductor light emitting device | |
TW200614547A (en) | Package for semiconductor light emitting element and semiconductor light emitting device | |
TW200512948A (en) | Light-emitting device capable of increasing light-emitting active region | |
TW200644301A (en) | Substrate for mounting light emitting element and light emitting element module | |
TW200518364A (en) | Semiconductor light emitting diode and method for manufacturing the same | |
TW200731570A (en) | Semiconductor light-emitting device, method manufacturing the same, and semiconductor light-emitting apparatus | |
TW200623450A (en) | Package structure of light emitting diode and its manufacture method | |
WO2008087930A1 (en) | Iii nitride compound semiconductor element and method for manufacturing the same, iii nitride compound semiconductor light emitting element and method for manufacturing the same, and lamp | |
TW200701519A (en) | Light emitting diode with conducting metal substrate | |
EP2157623A4 (en) | Semiconductor light emitting element and method for manufacturing the same | |
FR2895781B1 (en) | LIGHT STRUCTURE COMPRISING AT LEAST ONE ELECTROLUMINESCENT DIODE, ITS MANUFACTURE AND ITS APPLICATIONS | |
WO2011031417A3 (en) | Electronic device submounts with thermally conductive vias and light emitting devices including the same | |
TW200733436A (en) | Light emitting diode package structure and fabrication method thereof | |
TW200723567A (en) | Fabrication method of high-brightness light emitting diode having reflective layer | |
TW200739964A (en) | Light emitting device | |
WO2009120044A3 (en) | Light-emitting element and a production method therefor | |
TW200717863A (en) | Gallium nitride-based compound semiconductor light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |