TW200711160A - Light emitting diode device with porous surface layer and manufacturing method thereof - Google Patents

Light emitting diode device with porous surface layer and manufacturing method thereof

Info

Publication number
TW200711160A
TW200711160A TW094131052A TW94131052A TW200711160A TW 200711160 A TW200711160 A TW 200711160A TW 094131052 A TW094131052 A TW 094131052A TW 94131052 A TW94131052 A TW 94131052A TW 200711160 A TW200711160 A TW 200711160A
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor stack
emitting diode
light emitting
layer structure
Prior art date
Application number
TW094131052A
Other languages
Chinese (zh)
Other versions
TWI293212B (en
Inventor
shi-yu Qiu
yi-xiong Chen
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to TW094131052A priority Critical patent/TW200711160A/en
Publication of TW200711160A publication Critical patent/TW200711160A/en
Application granted granted Critical
Publication of TWI293212B publication Critical patent/TWI293212B/zh

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  • Led Devices (AREA)

Abstract

This invention relates to a kind of light emitting diode (LED) device with a porous surface layer, which comprises a AlInGaP semiconductor stack layer structure to be used for responding to conduction of electric current and thus generating light, and. an insulation reflection layer formed on part of surface of the bottom layer of the semiconductor stack layer structure to be used for forming current block and reflecting light generated from the semiconductor stack layer structure and projecting onto the insulation reflection layer, and, a porous metallic compound thin layer formed by diffusing metal material into the top layer of the semiconductor stack layer structure at high temperature and having its surface coarsened, and, in which the thin layer possesses functions of a window layer, a contact layer and surface coarsened in itself at the same time.
TW094131052A 2005-09-09 2005-09-09 Light emitting diode device with porous surface layer and manufacturing method thereof TW200711160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW094131052A TW200711160A (en) 2005-09-09 2005-09-09 Light emitting diode device with porous surface layer and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094131052A TW200711160A (en) 2005-09-09 2005-09-09 Light emitting diode device with porous surface layer and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200711160A true TW200711160A (en) 2007-03-16
TWI293212B TWI293212B (en) 2008-02-01

Family

ID=45067767

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094131052A TW200711160A (en) 2005-09-09 2005-09-09 Light emitting diode device with porous surface layer and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TW200711160A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI572060B (en) * 2015-11-20 2017-02-21 國立中興大學 Light-emitting diode and manufacturing method thereof

Also Published As

Publication number Publication date
TWI293212B (en) 2008-02-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees