TW200505051A - Light emitting device and its manufacturing method - Google Patents
Light emitting device and its manufacturing methodInfo
- Publication number
- TW200505051A TW200505051A TW093107630A TW93107630A TW200505051A TW 200505051 A TW200505051 A TW 200505051A TW 093107630 A TW093107630 A TW 093107630A TW 93107630 A TW93107630 A TW 93107630A TW 200505051 A TW200505051 A TW 200505051A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- layer
- metal layer
- emitting
- diffusion
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
Abstract
A light-emitting device (100) in which between a compound semiconductor layer (60) and a main metal layer (10), a contact metal layer (32) is disposed to reduce the contact resistance between the main metal layer (10) and the compound semiconductor layer (60). In the compound semiconductor layer (60), the region between the contact metal layer (32) and a light-emitting layer section (24) is transparent to the light emitted from the light-emitting layer section (24) and serves as a diffusion blocking semiconductor layer (25) to suppress the diffusion of components from the contact metal layer (32) to the light-emitting layer section (24). If the diffusion blocking semiconductor layer (25) is made of AlGaAs, it produces an effect of suppressing the diffusion of Ge, Ni, and Au from the contact metal layer (32) to the light-emitting layer section (24). Since the device substrate of the light-emitting device is joined to a light-emitting layer through a contact metal layer and a reflection metal layer, even if the light-emitting device is subjected to alloying heating treatment, the diffusion of components from the contact metal layer hardly influences the light-emitting layer section.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003123379 | 2003-04-28 | ||
| JP2003155921A JP4140007B2 (en) | 2003-04-28 | 2003-05-30 | Light emitting device and method for manufacturing light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200505051A true TW200505051A (en) | 2005-02-01 |
| TWI318462B TWI318462B (en) | 2009-12-11 |
Family
ID=33422061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093107630A TW200505051A (en) | 2003-04-28 | 2004-03-22 | Light emitting device and its manufacturing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4140007B2 (en) |
| TW (1) | TW200505051A (en) |
| WO (1) | WO2004097948A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI399865B (en) * | 2005-04-05 | 2013-06-21 | Philips Lumileds Lighting Co | Allngap led having reduced temperature dependence |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4731180B2 (en) * | 2005-02-21 | 2011-07-20 | 三洋電機株式会社 | Nitride semiconductor device manufacturing method |
| DE102005020908A1 (en) | 2005-02-28 | 2006-08-31 | Osram Opto Semiconductors Gmbh | Lighting device for back lighting of liquid crystal display, has optical unit with radiation emission surface which has convex curved partial region that partially surrounds concave curved partial region in distance to optical axis |
| JP4935136B2 (en) * | 2006-03-22 | 2012-05-23 | パナソニック株式会社 | Light emitting element |
| JP2008288248A (en) * | 2007-05-15 | 2008-11-27 | Hitachi Cable Ltd | Semiconductor light-emitting element |
| JP5228595B2 (en) * | 2008-04-21 | 2013-07-03 | ソニー株式会社 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME, LAMINATED STRUCTURE AND METHOD FOR FORMING THE SAME |
| KR101543328B1 (en) | 2008-11-18 | 2015-08-11 | 삼성전자주식회사 | Light emitting device and method of fabricating light emitting device |
| JP2010186829A (en) | 2009-02-10 | 2010-08-26 | Toshiba Corp | Method for manufacturing light emitting element |
| JP2011129724A (en) * | 2009-12-18 | 2011-06-30 | Dowa Electronics Materials Co Ltd | Semiconductor light-emitting element and method of manufacturing the same |
| KR102075132B1 (en) * | 2013-06-03 | 2020-02-10 | 엘지이노텍 주식회사 | Light emitting device |
| JP2014204095A (en) * | 2013-04-10 | 2014-10-27 | 信越半導体株式会社 | Semiconductor light emitting element and manufacturing method of the same |
| KR102045989B1 (en) | 2018-03-14 | 2019-11-18 | 한국과학기술연구원 | Semiconductor device using interdiffusion and method for manufacturing the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3230638B2 (en) * | 1993-02-10 | 2001-11-19 | シャープ株式会社 | Light emitting diode manufacturing method |
| US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| JPH0766455A (en) * | 1993-08-24 | 1995-03-10 | Shin Etsu Handotai Co Ltd | Semiconductor light emitting device |
| JP4050444B2 (en) * | 2000-05-30 | 2008-02-20 | 信越半導体株式会社 | Light emitting device and manufacturing method thereof |
-
2003
- 2003-05-30 JP JP2003155921A patent/JP4140007B2/en not_active Expired - Fee Related
-
2004
- 2004-03-22 TW TW093107630A patent/TW200505051A/en unknown
- 2004-03-29 WO PCT/JP2004/004420 patent/WO2004097948A1/en active Application Filing
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI399865B (en) * | 2005-04-05 | 2013-06-21 | Philips Lumileds Lighting Co | Allngap led having reduced temperature dependence |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4140007B2 (en) | 2008-08-27 |
| JP2005019424A (en) | 2005-01-20 |
| WO2004097948A1 (en) | 2004-11-11 |
| TWI318462B (en) | 2009-12-11 |
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