CN1922339B - 冷凝效应最小化的蒸汽沉积源 - Google Patents

冷凝效应最小化的蒸汽沉积源 Download PDF

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Publication number
CN1922339B
CN1922339B CN2005800056114A CN200580005611A CN1922339B CN 1922339 B CN1922339 B CN 1922339B CN 2005800056114 A CN2005800056114 A CN 2005800056114A CN 200580005611 A CN200580005611 A CN 200580005611A CN 1922339 B CN1922339 B CN 1922339B
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China
Prior art keywords
source
container
vessel
heating
opening
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Expired - Lifetime
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CN2005800056114A
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English (en)
Chinese (zh)
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CN1922339A (zh
Inventor
J·M·格雷斯
D·R·弗里曼
J·H·克卢格
N·P·雷登
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Global OLED Technology LLC
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Global OLED Technology LLC
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Publication of CN1922339A publication Critical patent/CN1922339A/zh
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
CN2005800056114A 2004-02-25 2005-02-11 冷凝效应最小化的蒸汽沉积源 Expired - Lifetime CN1922339B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/786,859 US6893939B1 (en) 2004-02-25 2004-02-25 Thermal physical vapor deposition source with minimized internal condensation effects
US10/786,859 2004-02-25
PCT/US2005/004394 WO2005083145A2 (en) 2004-02-25 2005-02-11 Vapor deposition source with minimized condensation effects

Publications (2)

Publication Number Publication Date
CN1922339A CN1922339A (zh) 2007-02-28
CN1922339B true CN1922339B (zh) 2010-08-25

Family

ID=34574859

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800056114A Expired - Lifetime CN1922339B (zh) 2004-02-25 2005-02-11 冷凝效应最小化的蒸汽沉积源

Country Status (6)

Country Link
US (1) US6893939B1 (enExample)
JP (1) JP4718538B2 (enExample)
KR (1) KR101136879B1 (enExample)
CN (1) CN1922339B (enExample)
TW (1) TWI394854B (enExample)
WO (1) WO2005083145A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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US7364772B2 (en) * 2004-03-22 2008-04-29 Eastman Kodak Company Method for coating an organic layer onto a substrate in a vacuum chamber
KR101106289B1 (ko) * 2006-08-04 2012-01-18 순천향대학교 산학협력단 증착 공정을 위한 선형 증착 소스
EP2109899A4 (en) * 2006-12-19 2012-12-12 Veeco Instr Inc SOURCES OF VAPOR DEPOSITION AND METHODS
WO2010080109A1 (en) * 2008-12-18 2010-07-15 Veeco Instruments Inc. Vacuum deposition sources having heated effusion orifices
US9062369B2 (en) * 2009-03-25 2015-06-23 Veeco Instruments, Inc. Deposition of high vapor pressure materials
US20110195187A1 (en) * 2010-02-10 2011-08-11 Apple Inc. Direct liquid vaporization for oleophobic coatings
US8715779B2 (en) 2011-06-24 2014-05-06 Apple Inc. Enhanced glass impact durability through application of thin films
JP2014189807A (ja) * 2013-03-26 2014-10-06 Canon Tokki Corp 蒸発源装置
CN104099570B (zh) * 2013-04-01 2016-10-05 上海和辉光电有限公司 单点线性蒸发源系统
KR102096049B1 (ko) * 2013-05-03 2020-04-02 삼성디스플레이 주식회사 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조 방법 및 유기발광 디스플레이 장치
CN104213077A (zh) * 2013-05-30 2014-12-17 海洋王照明科技股份有限公司 一种用于有机电致发光器件的蒸发设备
WO2018114373A1 (en) * 2016-12-22 2018-06-28 Flisom Ag Linear source for vapor deposition with at least three electrical heating elements
JP7011521B2 (ja) * 2018-04-17 2022-01-26 株式会社アルバック 真空蒸着装置用の蒸着源

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5532102A (en) * 1995-03-30 1996-07-02 Xerox Corporation Apparatus and process for preparation of migration imaging members
CN1291241A (zh) * 1998-02-19 2001-04-11 第一阳光有限公司 积淀半导体材料的装置和方法
US6237529B1 (en) * 2000-03-03 2001-05-29 Eastman Kodak Company Source for thermal physical vapor deposition of organic electroluminescent layers
CN1422976A (zh) * 2001-11-28 2003-06-11 伊斯曼柯达公司 用于生产有机发光装置的热物理蒸汽沉积源
CN1444423A (zh) * 2002-03-08 2003-09-24 伊斯曼柯达公司 用于制造有机发光器件的长条形热物理蒸汽淀积源

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US4356429A (en) 1980-07-17 1982-10-26 Eastman Kodak Company Organic electroluminescent cell
US4539507A (en) 1983-03-25 1985-09-03 Eastman Kodak Company Organic electroluminescent devices having improved power conversion efficiencies
EP0134280A1 (de) * 1983-08-29 1985-03-20 idn inventions and development of novelties ag Magazin für Tonaufzeichnungsträger
US4720432A (en) 1987-02-11 1988-01-19 Eastman Kodak Company Electroluminescent device with organic luminescent medium
US4769292A (en) 1987-03-02 1988-09-06 Eastman Kodak Company Electroluminescent device with modified thin film luminescent zone
JPH07118839A (ja) * 1993-10-22 1995-05-09 Mitsubishi Heavy Ind Ltd 金属蒸気発生装置
US5550066A (en) 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
US6337102B1 (en) 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
JPH11246963A (ja) * 1998-03-05 1999-09-14 Nikon Corp 蒸着用ボートとそれを用いて成膜した光学薄膜
JP2001279428A (ja) * 2000-03-31 2001-10-10 Matsushita Electric Ind Co Ltd 蒸着ボート
US20030168013A1 (en) 2002-03-08 2003-09-11 Eastman Kodak Company Elongated thermal physical vapor deposition source with plural apertures for making an organic light-emitting device
US6749906B2 (en) * 2002-04-25 2004-06-15 Eastman Kodak Company Thermal physical vapor deposition apparatus with detachable vapor source(s) and method
ATE326555T1 (de) * 2002-07-19 2006-06-15 Lg Electronics Inc Quelle zur thermischen pvd-beschichtung für organische elektrolumineszente schichten
US20040144321A1 (en) * 2003-01-28 2004-07-29 Eastman Kodak Company Method of designing a thermal physical vapor deposition system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5532102A (en) * 1995-03-30 1996-07-02 Xerox Corporation Apparatus and process for preparation of migration imaging members
CN1291241A (zh) * 1998-02-19 2001-04-11 第一阳光有限公司 积淀半导体材料的装置和方法
US6237529B1 (en) * 2000-03-03 2001-05-29 Eastman Kodak Company Source for thermal physical vapor deposition of organic electroluminescent layers
CN1422976A (zh) * 2001-11-28 2003-06-11 伊斯曼柯达公司 用于生产有机发光装置的热物理蒸汽沉积源
CN1444423A (zh) * 2002-03-08 2003-09-24 伊斯曼柯达公司 用于制造有机发光器件的长条形热物理蒸汽淀积源

Also Published As

Publication number Publication date
JP4718538B2 (ja) 2011-07-06
JP2007524763A (ja) 2007-08-30
TW200532037A (en) 2005-10-01
WO2005083145A2 (en) 2005-09-09
KR20060123578A (ko) 2006-12-01
CN1922339A (zh) 2007-02-28
US6893939B1 (en) 2005-05-17
KR101136879B1 (ko) 2012-04-20
WO2005083145A3 (en) 2006-02-02
TWI394854B (zh) 2013-05-01

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: GLOBAL OLED SCIENCE AND TECHNOLOGY CO., LTD.

Free format text: FORMER OWNER: EASMAN KODA CO., LTD.

Effective date: 20100421

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: NEW YORK STATE, U.S.A. TO: DELAWARE STATE, U.S.A.

TA01 Transfer of patent application right

Effective date of registration: 20100421

Address after: Delaware, USA

Applicant after: Global OLED Technology LLC

Address before: American New York

Applicant before: Eastman Kodak Co.

C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20100825

CX01 Expiry of patent term