JP4718538B2 - 凝縮効果が最少にされた蒸着源 - Google Patents
凝縮効果が最少にされた蒸着源 Download PDFInfo
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- JP4718538B2 JP4718538B2 JP2007500861A JP2007500861A JP4718538B2 JP 4718538 B2 JP4718538 B2 JP 4718538B2 JP 2007500861 A JP2007500861 A JP 2007500861A JP 2007500861 A JP2007500861 A JP 2007500861A JP 4718538 B2 JP4718538 B2 JP 4718538B2
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- 238000009833 condensation Methods 0.000 title description 21
- 230000005494 condensation Effects 0.000 title description 21
- 230000000694 effects Effects 0.000 title description 15
- 238000000151 deposition Methods 0.000 claims description 103
- 239000000463 material Substances 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 24
- 238000007740 vapor deposition Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 239000011364 vaporized material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 description 41
- 230000008020 evaporation Effects 0.000 description 37
- 230000005855 radiation Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 11
- 239000011368 organic material Substances 0.000 description 10
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- 239000002245 particle Substances 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
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- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 238000005289 physical deposition Methods 0.000 description 2
- 238000002601 radiography Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- YZANRISAORXTHU-UHFFFAOYSA-N 1,2-dichloro-4-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=CC=C(Cl)C(Cl)=C1 YZANRISAORXTHU-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- IUFDZNVMARBLOJ-UHFFFAOYSA-K aluminum;quinoline-2-carboxylate Chemical compound [Al+3].C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IUFDZNVMARBLOJ-UHFFFAOYSA-K 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
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- 230000005865 ionizing radiation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
a)長さ方向のコンダクタンスCBを持つ、該材料を収容するための細長い容器を含むこと;
b)該容器内の該材料を加熱してその材料を気化させ、部分圧Pmにするためのヒーターを含むこと;
c)該容器は少なくとも1つの部材を有し、その部材の長さ方向に配置された複数の開口部が画定されており、該開口部の全コンダクタンスはCAであって、CA/CB≦0.5を満たすこと;そして
d)該容器のそれぞれの側を加熱してその容器の表面に凝縮する材料を減らすための端部加熱手段を備えていること
を特徴とする蒸着源によって達成される。
端部にヒーターがない場合
例1と同じ実験装置を使用したが、容器の両端部を加熱する操作を追加することで容器の表面に凝縮する材料を減らした。例1の長方形容器の代わりに(図1の容器に関して概略を示してあるように)傾斜した端部壁面を有する容器(図1)を用いた。壁面は水平から約35°の角度傾斜していた。蒸発源に200gのAlqを装填し、真空チェンバーの中で、例1で説明したようにセンサー・アレイの下に配置した。所定の速度におけるコンダクタンス比と動作圧は、例1で説明した通りにした。
例1と同じ実験装置を使用したが、容器のそれぞれの側を加熱して容器の表面に凝縮する材料を減らす構造を付加した。シート金属からなるタブ(図2の延長部18)を開口プレート(図2のカバー13)のそれぞれの端部にスポット溶接した。蒸発源に200gのAlqを装填し、真空チェンバーの中で、実施例1で説明したようにセンサー・アレイの下に配置した。所定の速度におけるコンダクタンス比と動作圧は、例1で説明した通りにした。
2、12、22 蒸発材料
3、13、23 カバー
4、14、24 開口部
5、15、25 端部コンタクト
6、16、26 バッフル
7 傾斜した端部壁面(上方に傾斜している底面)
18、19 延長部
29 端部加熱要素
30 電気リード線
31 下部放射シールド
32 上部放射シールド
33 断熱絶縁プレート
34 るつぼ
35 基板並進移動組立体
36 基板
37 蒸発源並進移動組立体
38 電源
Claims (3)
- 材料を基板に堆積させるための、熱による物理的蒸着源であって、
a)長さ方向のコンダクタンスCBを持つ、該材料を収容するための細長い容器を含むこと;
b)該容器内の該材料を加熱してその材料を気化させ、部分圧Pmにするためのヒーターを含むこと;
c)該容器は少なくとも1つの部材を有し、その部材の長さ方向に配置された複数の開口部が画定されており、該開口部の全コンダクタンスはCAであって、CA/CB≦0.5を満たすこと;そして
d)該容器のそれぞれの側を加熱してその容器の表面に凝縮する材料を減らすための端部加熱手段を備えていること
を特徴とする蒸着源。 - 材料を基板に堆積させるための、熱による物理的蒸着源であって、
a)材料収容領域を画定する壁面を持つ細長い容器を含み、該容器は、長手方向のコンダクタンスCBを持ち、複数の開口部を画定する部材を備え、さらに、気化した材料がまず最初に該容器の壁面にぶつかることなく前記部材の開口部を通過することをなくすために前記開口部と前記材料の間にバッフルを含むこと;
b)該容器内の該材料を加熱してその材料を気化させ、部分圧Pmにするための1つ以上の加熱要素を含むこと;
c)該部材の開口部は長さ方向に沿って配置されており、該開口部の全コンダクタンスはCAであって、CA/CB≦0.5を満たすこと;
d)該容器のそれぞれの側を加熱して該容器の表面に凝縮する材料を減らすための端部加熱手段を備えていること
を特徴とする蒸着源。 - 大面積の基板をコーティングする方法であって、
a)加工部品に堆積させる材料を、長手方向のコンダクタンスCBを持つ細長い容器に装填する操作を含むこと;
b)該容器内の該材料を加熱してその材料を気化させ、部分圧Pmにする操作を含むこと;
c)該容器が、長手方向に沿って細長いパターンに並んだ1つ以上の開口部を画定しており、気化した該材料をその開口部を通じて放出させ、その1つ以上の開口部はコンダクタンスがCAであり、CA/CB≦0.5を満たすこと;
d)該容器の表面に凝縮する材料を減らすために該容器のそれぞれの端部を加熱する操作を含むこと;
e)該基板と該細長い容器を、該長手方向に対して実質的に垂直な方向において相対運動させる操作を含むこと
を特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/786,859 | 2004-02-25 | ||
US10/786,859 US6893939B1 (en) | 2004-02-25 | 2004-02-25 | Thermal physical vapor deposition source with minimized internal condensation effects |
PCT/US2005/004394 WO2005083145A2 (en) | 2004-02-25 | 2005-02-11 | Vapor deposition source with minimized condensation effects |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007524763A JP2007524763A (ja) | 2007-08-30 |
JP2007524763A5 JP2007524763A5 (ja) | 2008-03-21 |
JP4718538B2 true JP4718538B2 (ja) | 2011-07-06 |
Family
ID=34574859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007500861A Active JP4718538B2 (ja) | 2004-02-25 | 2005-02-11 | 凝縮効果が最少にされた蒸着源 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6893939B1 (ja) |
JP (1) | JP4718538B2 (ja) |
KR (1) | KR101136879B1 (ja) |
CN (1) | CN1922339B (ja) |
TW (1) | TWI394854B (ja) |
WO (1) | WO2005083145A2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US7364772B2 (en) * | 2004-03-22 | 2008-04-29 | Eastman Kodak Company | Method for coating an organic layer onto a substrate in a vacuum chamber |
KR101106289B1 (ko) * | 2006-08-04 | 2012-01-18 | 순천향대학교 산학협력단 | 증착 공정을 위한 선형 증착 소스 |
EP2109899A4 (en) * | 2006-12-19 | 2012-12-12 | Veeco Instr Inc | SOILING METHOD AND METHOD |
WO2010080109A1 (en) * | 2008-12-18 | 2010-07-15 | Veeco Instruments Inc. | Vacuum deposition sources having heated effusion orifices |
KR20110138259A (ko) * | 2009-03-25 | 2011-12-26 | 비코 인스트루먼츠 인코포레이티드 | 고증기압재료의 증착 |
US20110195187A1 (en) * | 2010-02-10 | 2011-08-11 | Apple Inc. | Direct liquid vaporization for oleophobic coatings |
US8715779B2 (en) | 2011-06-24 | 2014-05-06 | Apple Inc. | Enhanced glass impact durability through application of thin films |
JP2014189807A (ja) * | 2013-03-26 | 2014-10-06 | Canon Tokki Corp | 蒸発源装置 |
CN104099570B (zh) * | 2013-04-01 | 2016-10-05 | 上海和辉光电有限公司 | 单点线性蒸发源系统 |
KR102096049B1 (ko) * | 2013-05-03 | 2020-04-02 | 삼성디스플레이 주식회사 | 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조 방법 및 유기발광 디스플레이 장치 |
CN104213077A (zh) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | 一种用于有机电致发光器件的蒸发设备 |
WO2018114373A1 (en) * | 2016-12-22 | 2018-06-28 | Flisom Ag | Linear source for vapor deposition with at least three electrical heating elements |
JP7011521B2 (ja) * | 2018-04-17 | 2022-01-26 | 株式会社アルバック | 真空蒸着装置用の蒸着源 |
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US6749906B2 (en) * | 2002-04-25 | 2004-06-15 | Eastman Kodak Company | Thermal physical vapor deposition apparatus with detachable vapor source(s) and method |
EP1382713B1 (en) * | 2002-07-19 | 2006-05-17 | Lg Electronics Inc. | Source for thermal physical vapour deposition of organic electroluminescent layers |
US20040144321A1 (en) * | 2003-01-28 | 2004-07-29 | Eastman Kodak Company | Method of designing a thermal physical vapor deposition system |
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2004
- 2004-02-25 US US10/786,859 patent/US6893939B1/en not_active Expired - Lifetime
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2005
- 2005-02-11 JP JP2007500861A patent/JP4718538B2/ja active Active
- 2005-02-11 KR KR1020067017022A patent/KR101136879B1/ko active IP Right Grant
- 2005-02-11 CN CN2005800056114A patent/CN1922339B/zh active Active
- 2005-02-11 WO PCT/US2005/004394 patent/WO2005083145A2/en active Application Filing
- 2005-02-24 TW TW094105633A patent/TWI394854B/zh active
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JPH07118839A (ja) * | 1993-10-22 | 1995-05-09 | Mitsubishi Heavy Ind Ltd | 金属蒸気発生装置 |
JPH11246963A (ja) * | 1998-03-05 | 1999-09-14 | Nikon Corp | 蒸着用ボートとそれを用いて成膜した光学薄膜 |
JP2001279428A (ja) * | 2000-03-31 | 2001-10-10 | Matsushita Electric Ind Co Ltd | 蒸着ボート |
JP2003297570A (ja) * | 2002-03-08 | 2003-10-17 | Eastman Kodak Co | 有機発光デバイス製造用のコーティング方法及び細長い熱物理蒸着源 |
Also Published As
Publication number | Publication date |
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WO2005083145A2 (en) | 2005-09-09 |
CN1922339A (zh) | 2007-02-28 |
KR101136879B1 (ko) | 2012-04-20 |
WO2005083145A3 (en) | 2006-02-02 |
JP2007524763A (ja) | 2007-08-30 |
TW200532037A (en) | 2005-10-01 |
KR20060123578A (ko) | 2006-12-01 |
TWI394854B (zh) | 2013-05-01 |
CN1922339B (zh) | 2010-08-25 |
US6893939B1 (en) | 2005-05-17 |
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