CN1291241A - 积淀半导体材料的装置和方法 - Google Patents
积淀半导体材料的装置和方法 Download PDFInfo
- Publication number
- CN1291241A CN1291241A CN99803138.0A CN99803138A CN1291241A CN 1291241 A CN1291241 A CN 1291241A CN 99803138 A CN99803138 A CN 99803138A CN 1291241 A CN1291241 A CN 1291241A
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- deposition
- glass substrate
- sheet glass
- carrier gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 122
- 239000000463 material Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000000151 deposition Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 230000008021 deposition Effects 0.000 claims abstract description 52
- 239000012159 carrier gas Substances 0.000 claims abstract description 45
- 239000000843 powder Substances 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000005357 flat glass Substances 0.000 claims description 59
- 230000003204 osmotic effect Effects 0.000 claims description 55
- 239000007789 gas Substances 0.000 claims description 21
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052863 mullite Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 description 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 102000040350 B family Human genes 0.000 description 1
- 108091072128 B family Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/287—Chalcogenides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Electrostatic Spraying Apparatus (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (31)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/026139 | 1998-02-19 | ||
US09/026,139 US6037241A (en) | 1998-02-19 | 1998-02-19 | Apparatus and method for depositing a semiconductor material |
US09/026,139 | 1998-02-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1291241A true CN1291241A (zh) | 2001-04-11 |
CN1130470C CN1130470C (zh) | 2003-12-10 |
Family
ID=21830125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99803138.0A Expired - Fee Related CN1130470C (zh) | 1998-02-19 | 1999-01-20 | 淀积半导体材料的装置和方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US6037241A (zh) |
EP (1) | EP1060285B1 (zh) |
JP (1) | JP3504613B2 (zh) |
CN (1) | CN1130470C (zh) |
AT (1) | ATE510935T1 (zh) |
AU (1) | AU2328399A (zh) |
CY (1) | CY1111737T1 (zh) |
DK (1) | DK1060285T3 (zh) |
ES (1) | ES2366662T3 (zh) |
PT (1) | PT1060285E (zh) |
WO (1) | WO1999042635A1 (zh) |
Cited By (10)
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CN1922339B (zh) * | 2004-02-25 | 2010-08-25 | 全球Oled科技有限责任公司 | 冷凝效应最小化的蒸汽沉积源 |
CN102312198A (zh) * | 2010-06-30 | 2012-01-11 | 上方能源技术(杭州)有限公司 | 一种蒸镀源及蒸镀镀膜装置 |
CN102839352A (zh) * | 2011-06-21 | 2012-12-26 | 无锡尚德太阳能电力有限公司 | 一种薄膜沉积装置及方法 |
CN103132022A (zh) * | 2011-11-24 | 2013-06-05 | 甘国工 | 在玻璃或金属基片上沉积导电膜或半导体材料的设备和方法 |
CN103132021A (zh) * | 2011-11-24 | 2013-06-05 | 甘国工 | 在基片上沉积导电膜或半导体材料的设备和方法 |
CN101432457B (zh) * | 2004-08-18 | 2013-06-12 | 卡利索有限责任公司 | 大气压化学气相淀积 |
CN103526159A (zh) * | 2012-07-04 | 2014-01-22 | 甘国工 | 在玻璃或金属基片上沉积铜铟镓硒吸收层的设备和方法 |
CN104024469A (zh) * | 2011-09-02 | 2014-09-03 | 第一太阳能有限公司 | 用于气相传输沉积系统的给料器系统和给料方法 |
CN104789945A (zh) * | 2015-04-01 | 2015-07-22 | 华东师范大学 | 一种太阳能电池吸收层的气相输运沉积装置 |
CN108926868A (zh) * | 2017-05-26 | 2018-12-04 | 环球展览公司 | 具有输出蒸汽压的时间稳定性的升华单元 |
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JP3147048B2 (ja) * | 1997-09-12 | 2001-03-19 | 日本電気株式会社 | 半導体装置 |
US20030129299A1 (en) * | 2000-11-16 | 2003-07-10 | Swanson Leland S. | Selective deposition of emissive layer in electroluminescent displays |
US6559411B2 (en) * | 2001-08-10 | 2003-05-06 | First Solar, Llc | Method and apparatus for laser scribing glass sheet substrate coatings |
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US8535759B2 (en) * | 2001-09-04 | 2013-09-17 | The Trustees Of Princeton University | Method and apparatus for depositing material using a dynamic pressure |
US7431968B1 (en) * | 2001-09-04 | 2008-10-07 | The Trustees Of Princeton University | Process and apparatus for organic vapor jet deposition |
US7404862B2 (en) * | 2001-09-04 | 2008-07-29 | The Trustees Of Princeton University | Device and method for organic vapor jet deposition |
US6776330B2 (en) | 2001-09-10 | 2004-08-17 | Air Products And Chemicals, Inc. | Hydrogen fluxless soldering by electron attachment |
US6808741B1 (en) * | 2001-10-26 | 2004-10-26 | Seagate Technology Llc | In-line, pass-by method for vapor lubrication |
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US6617507B2 (en) | 2001-11-16 | 2003-09-09 | First Solar, Llc | Photovoltaic array |
US7208195B2 (en) * | 2002-03-27 | 2007-04-24 | Ener1Group, Inc. | Methods and apparatus for deposition of thin films |
US20040144321A1 (en) * | 2003-01-28 | 2004-07-29 | Eastman Kodak Company | Method of designing a thermal physical vapor deposition system |
JP4180948B2 (ja) * | 2003-03-24 | 2008-11-12 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法、ガスノズル |
US7079370B2 (en) * | 2003-04-28 | 2006-07-18 | Air Products And Chemicals, Inc. | Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation |
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Also Published As
Publication number | Publication date |
---|---|
CN1130470C (zh) | 2003-12-10 |
JP3504613B2 (ja) | 2004-03-08 |
EP1060285A1 (en) | 2000-12-20 |
JP2002504745A (ja) | 2002-02-12 |
AU2328399A (en) | 1999-09-06 |
EP1060285B1 (en) | 2011-05-25 |
ES2366662T3 (es) | 2011-10-24 |
CY1111737T1 (el) | 2015-10-07 |
WO1999042635A1 (en) | 1999-08-26 |
DK1060285T3 (da) | 2011-08-15 |
ATE510935T1 (de) | 2011-06-15 |
US6037241A (en) | 2000-03-14 |
EP1060285A4 (en) | 2009-01-07 |
PT1060285E (pt) | 2011-08-26 |
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