CN1861839A - 催化剂增强的化学汽相淀积设备及利用该设备的淀积方法 - Google Patents
催化剂增强的化学汽相淀积设备及利用该设备的淀积方法 Download PDFInfo
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- CN1861839A CN1861839A CNA2006100783685A CN200610078368A CN1861839A CN 1861839 A CN1861839 A CN 1861839A CN A2006100783685 A CNA2006100783685 A CN A2006100783685A CN 200610078368 A CN200610078368 A CN 200610078368A CN 1861839 A CN1861839 A CN 1861839A
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- vapor deposition
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 81
- 239000003054 catalyst Substances 0.000 title claims abstract description 15
- 238000000151 deposition Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000008569 process Effects 0.000 claims abstract description 11
- 230000008676 import Effects 0.000 claims description 10
- 238000007514 turning Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000012777 electrically insulating material Substances 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 238000007665 sagging Methods 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 7
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 81
- 238000010438 heat treatment Methods 0.000 description 19
- 238000005137 deposition process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 210000003127 knee Anatomy 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050040311 | 2005-05-13 | ||
KR1020050040311A KR100688838B1 (ko) | 2005-05-13 | 2005-05-13 | 촉매 화학기상증착장치 및 촉매 화학기상증착방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1861839A true CN1861839A (zh) | 2006-11-15 |
CN100582301C CN100582301C (zh) | 2010-01-20 |
Family
ID=37389363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610078368A Active CN100582301C (zh) | 2005-05-13 | 2006-05-15 | 催化剂增强的化学汽相淀积设备及利用该设备的淀积方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8052795B2 (zh) |
JP (1) | JP4308818B2 (zh) |
KR (1) | KR100688838B1 (zh) |
CN (1) | CN100582301C (zh) |
TW (1) | TWI316971B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102140626A (zh) * | 2010-08-13 | 2011-08-03 | 北京天地东方超硬材料股份有限公司 | 制备金刚石膜的张丝结构 |
CN102459694A (zh) * | 2009-06-02 | 2012-05-16 | 费劳恩霍夫应用研究促进协会 | 涂布设备和涂布方法 |
CN102576668A (zh) * | 2009-10-02 | 2012-07-11 | 三洋电机株式会社 | 催化cvd装置、膜的形成方法和太阳能电池的制造方法 |
CN103834930A (zh) * | 2013-12-29 | 2014-06-04 | 湖南中航超强金刚石膜高科技有限公司 | 一种内孔涂层金刚石膜的夹具和工艺 |
CN103988286A (zh) * | 2011-12-23 | 2014-08-13 | 应用材料公司 | 自给自足式加热元件 |
CN106884155A (zh) * | 2017-03-03 | 2017-06-23 | 深圳先进技术研究院 | 热丝承载架及金刚石薄膜沉积设备 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4948021B2 (ja) * | 2006-04-13 | 2012-06-06 | 株式会社アルバック | 触媒体化学気相成長装置 |
US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
US8409351B2 (en) * | 2007-08-08 | 2013-04-02 | Sic Systems, Inc. | Production of bulk silicon carbide with hot-filament chemical vapor deposition |
JP5268059B2 (ja) * | 2008-09-03 | 2013-08-21 | 株式会社石川製作所 | 触媒化学気相成長装置の触媒体支持構造 |
KR101128739B1 (ko) * | 2008-12-02 | 2012-03-26 | 엘아이지에이디피 주식회사 | 기판증착장치 |
JP5430979B2 (ja) * | 2009-03-12 | 2014-03-05 | 大亜真空株式会社 | 熱フィラメントcvd装置 |
US8852347B2 (en) * | 2010-06-11 | 2014-10-07 | Tokyo Electron Limited | Apparatus for chemical vapor deposition control |
KR101249999B1 (ko) * | 2010-08-12 | 2013-04-03 | 주식회사 디엠에스 | 화학기상증착 장치 |
TWI470113B (zh) * | 2010-09-30 | 2015-01-21 | Soitec Silicon On Insulator | 產生增量前驅氣體之熱化氣體注入器,包含此等注入器之材料沉積系統及其相關方法 |
US20120269967A1 (en) * | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use |
JP5803003B2 (ja) * | 2011-07-07 | 2015-11-04 | 地方独立行政法人東京都立産業技術研究センター | 熱フィラメントcvd装置及び成膜方法 |
TWI470110B (zh) * | 2012-09-07 | 2015-01-21 | Manz Taiwan Ltd | 用於化學沉積設備的夾固裝置 |
US9416450B2 (en) * | 2012-10-24 | 2016-08-16 | Applied Materials, Inc. | Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber |
WO2014149962A1 (en) * | 2013-03-14 | 2014-09-25 | Applied Materials, Inc. | Apparatus for coupling a hot wire source to a process chamber |
US20170040140A1 (en) * | 2015-08-06 | 2017-02-09 | Seagate Technology Llc | Magnet array for plasma-enhanced chemical vapor deposition |
US11154903B2 (en) * | 2016-05-13 | 2021-10-26 | Jiangsu Favored Nanotechnology Co., Ltd. | Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization |
CN107527856A (zh) * | 2017-09-01 | 2017-12-29 | 河北羿珩科技有限责任公司 | 用于太阳能电池片焊接的丝网压固机构 |
US10889894B2 (en) * | 2018-08-06 | 2021-01-12 | Applied Materials, Inc. | Faceplate with embedded heater |
JP6994446B2 (ja) * | 2018-09-10 | 2022-01-14 | 株式会社神戸製鋼所 | 熱フィラメントcvd装置 |
JP6987722B2 (ja) * | 2018-09-10 | 2022-01-05 | 株式会社神戸製鋼所 | 熱フィラメントcvd装置 |
WO2022010839A1 (en) * | 2020-07-10 | 2022-01-13 | Applied Materials, Inc. | Faceplate tensioning method and apparatus to prevent droop |
Family Cites Families (16)
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US4237150A (en) | 1979-04-18 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Method of producing hydrogenated amorphous silicon film |
US4970986A (en) * | 1989-08-03 | 1990-11-20 | General Electric Company | Apparatus for synthetic diamond deposition including spring-tensioned filaments |
JPH0421777A (ja) | 1990-05-14 | 1992-01-24 | Seiko Instr Inc | ダイヤモンドの合成装置 |
US5833753A (en) * | 1995-12-20 | 1998-11-10 | Sp 3, Inc. | Reactor having an array of heating filaments and a filament force regulator |
JP3141805B2 (ja) | 1997-01-20 | 2001-03-07 | 日本電気株式会社 | 半導体装置の製造方法 |
IT1303163B1 (it) * | 1998-07-21 | 2000-10-30 | Micheletti Macchine Srl | Macchina per il taglio di lastre da un blocco di materiale lapideo. |
JP2002016003A (ja) * | 2000-06-29 | 2002-01-18 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP4710187B2 (ja) * | 2000-08-30 | 2011-06-29 | ソニー株式会社 | 多結晶シリコン層の成長方法および単結晶シリコン層のエピタキシャル成長方法 |
JP2002093713A (ja) | 2000-09-11 | 2002-03-29 | Hitachi Kokusai Electric Inc | 半導体製造装置及び半導体装置の製造方法 |
ATE346378T1 (de) * | 2000-09-14 | 2006-12-15 | Japan Government | Heizelement für einen cvd-apparat |
JP2002356777A (ja) * | 2001-05-31 | 2002-12-13 | Matsushita Electric Ind Co Ltd | 線材配置方法およびそれを用いた触媒化学気相堆積法ならびに触媒化学気相堆積装置 |
JP3904883B2 (ja) | 2001-10-19 | 2007-04-11 | 京セラ株式会社 | ガス分離型触媒cvd装置 |
JP4035011B2 (ja) * | 2002-07-17 | 2008-01-16 | 株式会社アルバック | 触媒cvd用触媒線 |
JP2004107766A (ja) | 2002-09-20 | 2004-04-08 | Japan Advanced Inst Of Science & Technology Hokuriku | 触媒化学気相成長方法および触媒化学気相成長装置 |
JP3787816B2 (ja) * | 2002-10-04 | 2006-06-21 | キヤノンアネルバ株式会社 | 発熱体cvd装置 |
JP4583061B2 (ja) | 2004-03-30 | 2010-11-17 | 京セラ株式会社 | 発熱体cvd装置 |
-
2005
- 2005-05-13 KR KR1020050040311A patent/KR100688838B1/ko active IP Right Grant
- 2005-12-13 JP JP2005359323A patent/JP4308818B2/ja active Active
-
2006
- 2006-04-18 TW TW095113716A patent/TWI316971B/zh active
- 2006-04-18 US US11/405,552 patent/US8052795B2/en active Active
- 2006-05-15 CN CN200610078368A patent/CN100582301C/zh active Active
Cited By (10)
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CN102459694A (zh) * | 2009-06-02 | 2012-05-16 | 费劳恩霍夫应用研究促进协会 | 涂布设备和涂布方法 |
CN102459694B (zh) * | 2009-06-02 | 2013-11-06 | 费劳恩霍夫应用研究促进协会 | 涂布设备和涂布方法 |
US8986452B2 (en) | 2009-06-02 | 2015-03-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Coating device and coating method |
CN102576668A (zh) * | 2009-10-02 | 2012-07-11 | 三洋电机株式会社 | 催化cvd装置、膜的形成方法和太阳能电池的制造方法 |
CN102576668B (zh) * | 2009-10-02 | 2015-07-08 | 三洋电机株式会社 | 催化cvd装置、膜的形成方法和太阳能电池的制造方法 |
CN102140626A (zh) * | 2010-08-13 | 2011-08-03 | 北京天地东方超硬材料股份有限公司 | 制备金刚石膜的张丝结构 |
CN103988286A (zh) * | 2011-12-23 | 2014-08-13 | 应用材料公司 | 自给自足式加热元件 |
CN103834930A (zh) * | 2013-12-29 | 2014-06-04 | 湖南中航超强金刚石膜高科技有限公司 | 一种内孔涂层金刚石膜的夹具和工艺 |
CN106884155A (zh) * | 2017-03-03 | 2017-06-23 | 深圳先进技术研究院 | 热丝承载架及金刚石薄膜沉积设备 |
CN106884155B (zh) * | 2017-03-03 | 2019-11-05 | 深圳先进技术研究院 | 热丝承载架及金刚石薄膜沉积设备 |
Also Published As
Publication number | Publication date |
---|---|
CN100582301C (zh) | 2010-01-20 |
TWI316971B (en) | 2009-11-11 |
JP4308818B2 (ja) | 2009-08-05 |
TW200643213A (en) | 2006-12-16 |
KR20060117773A (ko) | 2006-11-17 |
US8052795B2 (en) | 2011-11-08 |
JP2006319304A (ja) | 2006-11-24 |
US20060254513A1 (en) | 2006-11-16 |
KR100688838B1 (ko) | 2007-03-02 |
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