CN1841780B - 薄膜晶体管、薄膜晶体管显示板及其制造方法 - Google Patents

薄膜晶体管、薄膜晶体管显示板及其制造方法 Download PDF

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Publication number
CN1841780B
CN1841780B CN2006100676109A CN200610067610A CN1841780B CN 1841780 B CN1841780 B CN 1841780B CN 2006100676109 A CN2006100676109 A CN 2006100676109A CN 200610067610 A CN200610067610 A CN 200610067610A CN 1841780 B CN1841780 B CN 1841780B
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Prior art keywords
thin film
film transistor
linear semiconductor
core
display panel
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Expired - Fee Related
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CN2006100676109A
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Chinese (zh)
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CN1841780A (zh
Inventor
卢水贵
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN2006100676109A 2005-03-17 2006-03-17 薄膜晶体管、薄膜晶体管显示板及其制造方法 Expired - Fee Related CN1841780B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050022379A KR101100887B1 (ko) 2005-03-17 2005-03-17 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
KR22379/05 2005-03-17

Publications (2)

Publication Number Publication Date
CN1841780A CN1841780A (zh) 2006-10-04
CN1841780B true CN1841780B (zh) 2011-06-29

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CN2006100676109A Expired - Fee Related CN1841780B (zh) 2005-03-17 2006-03-17 薄膜晶体管、薄膜晶体管显示板及其制造方法

Country Status (5)

Country Link
US (2) US7910930B2 (https=)
JP (1) JP5403854B2 (https=)
KR (1) KR101100887B1 (https=)
CN (1) CN1841780B (https=)
TW (1) TWI378561B (https=)

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US7767564B2 (en) * 2005-12-09 2010-08-03 Zt3 Technologies, Inc. Nanowire electronic devices and method for producing the same
US7999251B2 (en) * 2006-09-11 2011-08-16 International Business Machines Corporation Nanowire MOSFET with doped epitaxial contacts for source and drain
KR100858223B1 (ko) * 2007-05-21 2008-09-10 연세대학교 산학협력단 자가정렬된 반도체 나노와이어 박막 트랜지스터 및 그 제조 방법
TWI427357B (zh) * 2010-06-30 2014-02-21 Au Optronics Corp 顯示面板的製造方法
CN101916733B (zh) * 2010-07-12 2012-07-04 友达光电股份有限公司 显示面板的制造方法
CN103926760B (zh) * 2013-01-14 2017-08-25 瀚宇彩晶股份有限公司 像素结构及像素阵列基板
CN105023898B (zh) * 2014-04-21 2017-12-08 台达电子工业股份有限公司 半导体装置封装体
KR102404780B1 (ko) * 2015-02-25 2022-06-02 삼성디스플레이 주식회사 플렉서블 표시 장치
CN108884810B (zh) * 2016-03-21 2021-07-30 瓦茨拉夫·普塔 风塔
US10948470B2 (en) * 2016-04-29 2021-03-16 TricornTech Taiwan System and method for in-line monitoring of airborne contamination and process health
CN113471298A (zh) * 2021-06-23 2021-10-01 Tcl华星光电技术有限公司 薄膜晶体管、显示面板及电子设备

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Also Published As

Publication number Publication date
JP2006261678A (ja) 2006-09-28
KR20060100661A (ko) 2006-09-21
JP5403854B2 (ja) 2014-01-29
TWI378561B (en) 2012-12-01
US20060220015A1 (en) 2006-10-05
CN1841780A (zh) 2006-10-04
KR101100887B1 (ko) 2012-01-02
US20110136279A1 (en) 2011-06-09
US7910930B2 (en) 2011-03-22
TW200701473A (en) 2007-01-01

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