CN1836322A - 垂直传输晶体管dram单元中自对准的漏极/沟道结 - Google Patents
垂直传输晶体管dram单元中自对准的漏极/沟道结 Download PDFInfo
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- CN1836322A CN1836322A CNA2004800229693A CN200480022969A CN1836322A CN 1836322 A CN1836322 A CN 1836322A CN A2004800229693 A CNA2004800229693 A CN A2004800229693A CN 200480022969 A CN200480022969 A CN 200480022969A CN 1836322 A CN1836322 A CN 1836322A
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- deep trench
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
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Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/604,731 US6930004B2 (en) | 2003-08-13 | 2003-08-13 | Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling |
US10/604,731 | 2003-08-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1836322A true CN1836322A (zh) | 2006-09-20 |
CN100375270C CN100375270C (zh) | 2008-03-12 |
Family
ID=34135431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800229693A Expired - Fee Related CN100375270C (zh) | 2003-08-13 | 2004-08-12 | 垂直传输晶体管dram单元中自对准的漏极/沟道结 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6930004B2 (zh) |
EP (1) | EP1661176B1 (zh) |
JP (1) | JP4524285B2 (zh) |
KR (1) | KR100843499B1 (zh) |
CN (1) | CN100375270C (zh) |
AT (1) | ATE539448T1 (zh) |
TW (1) | TWI304639B (zh) |
WO (1) | WO2005020318A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102034792A (zh) * | 2009-09-30 | 2011-04-27 | 海力士半导体有限公司 | 具有一侧接触的半导体器件及其制造方法 |
CN102024700B (zh) * | 2009-09-17 | 2012-09-26 | 北大方正集团有限公司 | 沟槽型双扩散金属氧化物半导体晶体管的制作方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200512886A (en) * | 2003-09-18 | 2005-04-01 | Nanya Technology Corp | Method for forming isolation zone of vertical dynamic random access memory cell |
US6979613B1 (en) * | 2003-11-16 | 2005-12-27 | Nanya Technology Corp. | Method for fabricating a trench capacitor of DRAM |
US20070275532A1 (en) * | 2006-05-24 | 2007-11-29 | International Business Machines Corporation | Optimized deep source/drain junctions with thin poly gate in a field effect transistor |
TWI334222B (en) * | 2007-05-24 | 2010-12-01 | Nanya Technology Corp | Dynamic random access memory and manufacturing method thereof |
US7838925B2 (en) * | 2008-07-15 | 2010-11-23 | Qimonda Ag | Integrated circuit including a vertical transistor and method |
KR101532366B1 (ko) * | 2009-02-25 | 2015-07-01 | 삼성전자주식회사 | 반도체 기억 소자 |
US8298908B2 (en) | 2010-02-11 | 2012-10-30 | International Business Machines Corporation | Structure and method for forming isolation and buried plate for trench capacitor |
US9761728B1 (en) | 2016-05-25 | 2017-09-12 | International Business Machines Corporation | Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021355A (en) * | 1989-05-22 | 1991-06-04 | International Business Machines Corporation | Method of fabricating cross-point lightly-doped drain-source trench transistor |
US4954854A (en) * | 1989-05-22 | 1990-09-04 | International Business Machines Corporation | Cross-point lightly-doped drain-source trench transistor and fabrication process therefor |
JP2837821B2 (ja) * | 1994-04-15 | 1998-12-16 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体デバイス |
DE19742403A1 (de) * | 1997-09-25 | 1999-04-08 | Siemens Ag | Verfahren zur Herstellung einer Halbleiterstruktur |
DE19742397C2 (de) * | 1997-09-25 | 2000-07-06 | Siemens Ag | Verfahren zur Herstellung einer Halbleiterstruktur mit einer Mehrzahl von Gräben |
DE19908809B4 (de) * | 1999-03-01 | 2007-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer MOS-Transistorstruktur mit einstellbarer Schwellspannung |
JP4091242B2 (ja) * | 1999-10-18 | 2008-05-28 | セイコーインスツル株式会社 | 縦形mosトランジスタ及びその製造方法 |
JP2001244433A (ja) * | 2000-02-24 | 2001-09-07 | Promos Technol Inc | Dramおよびその製造方法 |
US6688320B2 (en) | 2000-11-10 | 2004-02-10 | Flowtronex Psi, Inc. | Utility conservation control methodology within a fluid pumping system |
US6414347B1 (en) | 2001-01-10 | 2002-07-02 | International Business Machines Corporation | Vertical MOSFET |
US6440793B1 (en) | 2001-01-10 | 2002-08-27 | International Business Machines Corporation | Vertical MOSFET |
US6740920B2 (en) * | 2002-03-11 | 2004-05-25 | International Business Machines Corporation | Vertical MOSFET with horizontally graded channel doping |
-
2003
- 2003-08-13 US US10/604,731 patent/US6930004B2/en not_active Expired - Lifetime
-
2004
- 2004-08-02 TW TW093123128A patent/TWI304639B/zh not_active IP Right Cessation
- 2004-08-12 KR KR1020067000932A patent/KR100843499B1/ko active IP Right Grant
- 2004-08-12 WO PCT/US2004/026058 patent/WO2005020318A1/en active Application Filing
- 2004-08-12 CN CNB2004800229693A patent/CN100375270C/zh not_active Expired - Fee Related
- 2004-08-12 AT AT04780833T patent/ATE539448T1/de active
- 2004-08-12 JP JP2006523339A patent/JP4524285B2/ja not_active Expired - Fee Related
- 2004-08-12 EP EP04780833A patent/EP1661176B1/en not_active Not-in-force
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102024700B (zh) * | 2009-09-17 | 2012-09-26 | 北大方正集团有限公司 | 沟槽型双扩散金属氧化物半导体晶体管的制作方法 |
CN102034792A (zh) * | 2009-09-30 | 2011-04-27 | 海力士半导体有限公司 | 具有一侧接触的半导体器件及其制造方法 |
US9076864B2 (en) | 2009-09-30 | 2015-07-07 | SK Hynix Inc. | Semiconductor device with one-side-contact and method for fabricating the same |
US9263575B2 (en) | 2009-09-30 | 2016-02-16 | SK Hynix Inc. | Semiconductor device with one-side-contact and method for fabricating the same |
CN102034792B (zh) * | 2009-09-30 | 2016-03-23 | 海力士半导体有限公司 | 具有一侧接触的半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6930004B2 (en) | 2005-08-16 |
KR20060040683A (ko) | 2006-05-10 |
JP2008502123A (ja) | 2008-01-24 |
JP4524285B2 (ja) | 2010-08-11 |
ATE539448T1 (de) | 2012-01-15 |
TW200518273A (en) | 2005-06-01 |
TWI304639B (en) | 2008-12-21 |
WO2005020318A1 (en) | 2005-03-03 |
KR100843499B1 (ko) | 2008-07-04 |
EP1661176A1 (en) | 2006-05-31 |
EP1661176A4 (en) | 2010-03-24 |
CN100375270C (zh) | 2008-03-12 |
EP1661176B1 (en) | 2011-12-28 |
US20050037561A1 (en) | 2005-02-17 |
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